Results 111 to 120 of about 553 (192)

Ferroelectric compute-in-memory annealer for combinatorial optimization problems

Nature Communications
Computationally hard combinatorial optimization problems (COPs) are ubiquitous in many applications. Various digital annealers, dynamical Ising machines, and quantum/photonic systems have been developed for solving COPs, but they still suffer from the ...
Xunzhao Yin, Yu Qian, Alptekin Vardar, Marcel Günther, Franz Müller, Nellie Laleni, Zijian Zhao, Zhouhang Jiang, Zhiguo Shi, Yiyu Shi, Xiao Gong, Cheng Zhuo, Thomas Kämpfe, Kai Ni   +13 more
doaj   +1 more source

Hybrid dual gate ferroelectric memory for multilevel information storage

, 2015
Here, we report hybrid organic/inorganic ferroelectric memory with multilevel information storage using transparent p-type SnO semiconductor and ferroelectric P(VDF-TrFE) polymer. The dual gate devices include a top ferroelectric field-effect transistor (
Khan, Yasser, Alshareef, Husam N., Caraveo-Frescas, Jesus Alfonso   +2 more
core   +1 more source

Materials Characterization and Device Performance of a CMR-Ferroelectric Heterostructure

, 2001
:The films of colossal magnetoresistive La0.67Ca0.33MnO3 (LCMO) and ferroelectric SbSI were grown by pulsed laser deposition method for fabricating their heterostructures.
R. K. Pandey, S. R. Surthi, S. Kotru
core   +1 more source

Reconfigurable Ferroelectric Bandpass Filter With Low-Frequency Noise Analysis for Intracardiac Electrogram Monitoring

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Implantable cardioverter defibrillators (ICDs) provide real-time monitoring and immediate defibrillation for life-threatening arrhythmias. However, the intracardiac electrogram (IEGM) acquisition of ICDs faces stringent constraints, including power ...
Jianwei Jia, Zhenge Jia, Omkar Phadke, Yiyu Shi, Shimeng Yu   +4 more
doaj   +1 more source

Ferroelectric 2D SnS2 Analog Synaptic FET

Advanced Science
In this study, the development and characterization of 2D ferroelectric field‐effect transistor (2D FeFET) devices are presented, utilizing nanoscale ferroelectric HfZrO2 (HZO) and 2D semiconductors.
Chong‐Myeong Song, Dongha Kim, Shinbuhm Lee, Hyuk‐Jun Kwon   +3 more
doaj   +1 more source

Multilevel Operation in Scaled Back-End-of-Line Ferroelectric FETs With a Metal Interlayer

IEEE Access
Multi-level operation, conventionally obtained in ferroelectric devices thanks to a domain-dependent inhomogeneous polarization, poses a big challenge for highly-scaled ferroelectric devices, where the number of ferroelectric domains is drastically ...
Chiara Rossi, Daniel Lizzit, David Esseni   +2 more
doaj   +1 more source

Ferroelectric HfO2 Thin Films for FeFET Memory Devices

, 2016
Silicon-doped hafnium oxide has been shown to exhibit ferroelectric properties under the certain small thicknesses with appropriate applied stress and annealing conditions.
McGlone, Joseph F, McGlone, Joe
core  

Dopant-Dependent Flicker Noise of Hafnium Oxide Ferroelectric Field Effect Transistor

This article reports an improvement in the low-frequency noise characteristics of hafnium oxide-based (HfO2) ferroelectric field-effect transistors (FeFET) using different doping materials, namely silicon and zirconium.
Raffel, Yannick, De, Sourav, Hessler, Daniel, Seidel, Konrad, Hoffmann, Raik, Olivo, Ricardo Revello   +5 more
core   +1 more source

FeFET-Based MirrorBit Cell for High-Density NVM Storage

The HfO2-based ferroelectric field-effect transistor (FeFET) has become a center of attraction for nonvolatile memory application because of their low power, fast switching speed, high scalability, and CMOS compatibility.
Srinu, Rowtu, Lashkare, Sandip, Singh, Ajay Kumar, Saraswat, Vivek, Dunkel, Stefan, Beyer, Sven, Mulaosmanovic, Halid, Meihar, Paritosh, Ganguly, Udayan   +8 more
core   +1 more source

Towards Artificial Intelligence Hardware With 3D Integrated Ferroelectric Transistors. [PDF]

Small
Seok H, Kim G, Son S, Choi H, Kim T.
europepmc   +1 more source