Results 111 to 120 of about 15,744,307 (196)

Physical Reservoir based on a Leaky-FeFET Using the Temporal Memory Effect

In this work, a leaky-Ferroelectric Field Effect Transistor (FeFET) neuron is introduced as a physical reservoir in a reservoir computing scheme. Compared to a conventional FeFET reservoir control sample, which did not show leaky behavior, the proposed ...
Kang, Changyeon, Park, Youngkeun, Shin, Eui Joong, Cho, Byung-Jin, Lee, Gyusoup, Kim, Seongho   +5 more
core   +1 more source

Beyond Conventional Ferroelectric Field‐Effect Transistors: Recent Advances in Materials, Architectures, and Functional Applications

Advanced Physics Research, Volume 5, Issue 9, September 2026.
Ferroelectric field‐effect transistors (FeFETs) are advancing beyond conventional memory transistors into multifunctional hardware platforms enabled by emerging ferroelectric materials, scalable architectures, and neuromorphic/optoelectronic functionalities. Through HfO2‐based, two‐dimensional, and organic ferroelectrics, FeFETs achieve CMOS‐compatible
Hyeseoung Lee, Seungjun Lee, Jung‐Kyu Lee, Sungjun Kim   +3 more
wiley   +1 more source

Neuromorphic Hardware Materials for Intelligent Artificial Perception and Multimodal Fusion: From Sensing to Cognition

Interdisciplinary Materials, Volume 5, Issue 5, Page 699-727, September 2026.
Neuromorphic hardware enables the integration of sensing, memory, and computing for intelligent artificial perception. Recent advances in multimodal fusion further highlight its potential for embodied intelligence and next‐generation human–machine interfaces.
Yixin Zhu, Yuqing Hu, Changjin Wan, Qing Wan   +3 more
wiley   +1 more source

On the Challenges and Design Mitigations of Single Transistor Ferroelectric Content Addressable Memory

112115In this work, we identify the potential challenges of ambipolar ferroelectric field effect transistor (FeFET) in building a single transistor CAM array to perform parallel hamming distance (HD) computations.
Yin, Xunzhao, Kämpfe, Thomas, Xu, Haotian, Zhuo, Cheng, Ni, Kai, Yang, Jiangyi   +5 more
core   +1 more source

Performance Evaluation and Improvement of Ferroelectric Field-Effect Transistor Memory [PDF]

, 2015
Flash memory is reaching scaling limitations rapidly due to reduction of charge in floating gates, charge leakage and capacitive coupling between cells which cause threshold voltage fluctuations, short retention times, and interference.
Yu, Hyung Suk
core  

Unlocking Ferroelectricity in Hafnia: From Phase Origins to Device Integration

Interdisciplinary Materials, Volume 5, Issue 5, Page 749-771, September 2026.
This review provides a systematic overview of the critical factors for inducing ferroelectricity in hafnia‐based systems, covering multiple dimensions such as physical origin mechanisms, materials research, integration strategies, and emerging application areas.
Jiangzhen Niu, Xichen Tang, Wenhui Shi, Yunrui Xiu, Huimin Mao, Ye Tao, Xiaoning Zhao, Ya Lin, Zhongqiang Wang, Haiyang Xu, Yichun Liu   +10 more
wiley   +1 more source

Carrier Mobility Enhancement in Two‐Dimensional Semiconductor

Interdisciplinary Materials, Volume 5, Issue 5, Page 796-833, September 2026.
In this review, we comprehensively describe recent progress in carrier mobility enhancement strategies for 2D semiconductor‐based field‐effect transistors considering the role of intrinsic defects, electrode contact interfaces, dielectric engineering, and lattice strain engineering.
Huchanghui Zuo, Yuehao Li, Xiangkai Liu, Chao Tan, Guohua Hu, Mingdong Dong, Zegao Wang   +6 more
wiley   +1 more source

Demonstration of high-reconfigurability and low-power strong physical unclonable function empowered by FeFET cycle-to-cycle variation and charge-domain computing

Nature Communications
Physical unclonable functions (PUFs) are of immense potential in authentication scenarios for Internet of Things (IoT) devices. For creditable and lightweight PUF applications, key attributes, including low power, high reconfigurability and large ...
Taixin Li, Xinrui Guo, Franz Müller, Sukhrob Abdulazhanov, Xiaoyang Ma, Hongtao Zhong, Yongpan Liu, Vijaykrishnan Narayanan, Huazhong Yang, Kai Ni, Thomas Kämpfe, Xueqing Li   +11 more
doaj   +1 more source

Polymeric gate dielectric interlayer of cross-linkable poly(styrene-r-methylmethacrylate) copolymer for ferroelectric PVDF-TrFE field effect transistor memory

, 2009
A new polymeric gate dielectric interlayer of a cross-linkable poly(styrene-random-methylmethacrylate) copolymer is introduced with a good thermal and chemical resistance in bottom gate Ferroelectric Field Effect Transistor (FeFET) memory with pentacene ...
Park, Cheolmin, Chang, Jiyoun, Kang, Seok Ju, Ryu, Du Yeol, Jeong, HJ, Shin, Chang Hak, Park, Youn Jung, Hawker, CJ, Ryu, DY, Shin, CH, Chang, JY, Russell, TP, Hawker, Craig J., Kang, SJ, Park, YJ, Park, C, Jeong, Hee June, Kim, KJ, Kim, Kap Jin, Russell, Thomas P.   +19 more
core   +1 more source

A High-Efficiency Charge-Domain Compute-in-Memory 1F1C Macro Using 2-bit FeFET Cells for DNN Processing

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
This article introduces a 1FeFET-1Capacitance (1F1C) macro based on a 2-bit ferroelectric field-effect transistor (FeFET) cell operating in the charge domain, marking a significant advancement in nonvolatile memory (NVM) and compute-in-memory (CIM ...
Nellie Laleni, Franz Muller, Gonzalo Cunarro, Thomas Kampfe, Taekwang Jang   +4 more
doaj   +1 more source