Results 31 to 40 of about 15,744,307 (196)

Origin of multiple memory states in organic ferroelectric field-effect transistors [PDF]

, 2012
In this work, we investigate the ferroelectric polarization state in metal-ferroelectric-semiconductor-metal structures and in ferroelectric field-effect transistors (FeFET).
Mityashin, A., Genoe, J., Heremans, P., Smits, E.C.P., Schols, S., Kam, B., Cristoferi, C., Li, X., Gelinck, G.H.   +8 more
core   +3 more sources

From MFM capacitors toward ferroelectric transistors: Endurance and disturb characteristics of HfO2-based FeFET devices

, 2022
S.4199-4205Ferroelectric Si: HfO2 has been investigated starting from metal-ferroelectric-metal (MFM) capacitors over metal-ferroelectric-insulator-semiconductor (MFIS) and finally ferroelectric field-effect-transistor (FeFET) devices.
Hoffmann, R., Schlösser, T., Mikolajick, T., Yurchuk, E., Zaka, A., Mueller, S., Boschke, R., Paul, J., Goldbach, M., Müller, J., Herrmann, T., Schröder, U.   +11 more
core   +1 more source

Improving the Scalability of Ferroelectric FET Nonvolatile Memories With High-k Spacers

IEEE Journal of the Electron Devices Society, 2022
This paper investigates scaled ferroelectric field-effect transistor (FeFET) nonvolatile memories (NVMs) with high-k spacer device design considering ferroelectric-dielectric random phase variations with TCAD atomistic simulations.
You-Sheng Liu, Pin Su
doaj   +1 more source

Design and Simulation of Short Channel Si:HfO2 Ferroelectric Field Effect Transistor (FeFET) [PDF]

, 2014
Non-volatile memories using ferroelectric capacitors, known as Ferroelectric Random Access Memory (FRAM) have been studied for many years, but they suffer from loss of data during read out process.
Smaili, Idris H
core   +1 more source

Nanocrystal-Embedded-Insulator (NEI) Ferroelectric FETs for Negative Capacitance Device and Non-Volatile Memory Applications

Nanoscale Research Letters, 2019
We report a novel nanocrystal-embedded-insulator (NEI) ferroelectric field-effect transistor (FeFET) with very thin unified-ferroelectric/dielectric (FE/DE) insulating layer, which is promising for low-voltage logic and non-volatile memory (NVM ...
Yue Peng, Genquan Han, Wenwu Xiao, Jibao Wu, Yan Liu, Jincheng Zhang, Yue Hao   +6 more
doaj   +1 more source

Physical Mechanisms of Reverse DIBL and NDR in FeFETs With Steep Subthreshold Swing

IEEE Journal of the Electron Devices Society, 2020
We have investigated transient Id - Vg and Id - Vd characteristics of ferroelectric field-effect transistor (FeFET) by simulation with ferroelectric model considering polarization switching dynamics.
Chengji Jin, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi   +3 more
doaj   +1 more source

Structural and electrical properties of ferroelectric BiFeO3/HfO2 gate stack for nonvolatile memory applications [PDF]

Journal of Advanced Dielectrics, 2018
Difficulties in the fabrication of direct interface of ferroelectric BiFeO3 on the gate of ferroelectric field effect transistor (FeFET) is well known.
Nitish Yadav, Kamal Prakash Pandey, Pramod Narayan Tripathi   +2 more
doaj   +1 more source

Embedding-Enhanced Probabilistic Modeling of Ferroelectric Field Effect Transistors (FeFETs)

CoRR
15 pages, 6 figures, manuscript yet not submitted ...
Tasnia Nobi Afee, Jack Hutchins, Md. Mazharul Islam 0006, Thomas Kampfe, Ahmedullah Aziz   +4 more
openaire   +3 more sources

Ferroelectric field effect transistors: Progress and perspective

APL Materials, 2021
Ferroelectric field effect transistors (FeFETs) have attracted attention as next-generation devices as they can serve as a synaptic device for neuromorphic implementation and a one-transistor (1T) for achieving high integration.
Jae Young Kim, Min-Ju Choi, Ho Won Jang
doaj   +1 more source

Substrate-voltage-controlled temporal nonlinearity in ferroelectric FET-based reservoir computing [PDF]

APL Machine Learning
Physical reservoir computing exploits inherent nonlinearity and short-term memory of physical dynamics to achieve efficient processing of time-series data with extremely-low training cost.
Eishin Nako, Ryosho Nakane, Mitsuru Takenaka, Kasidit Toprasertpong, Shinichi Takagi   +4 more
doaj   +1 more source