Results 31 to 40 of about 553 (192)

Improving the Scalability of Ferroelectric FET Nonvolatile Memories With High-k Spacers

IEEE Journal of the Electron Devices Society, 2022
This paper investigates scaled ferroelectric field-effect transistor (FeFET) nonvolatile memories (NVMs) with high-k spacer device design considering ferroelectric-dielectric random phase variations with TCAD atomistic simulations.
You-Sheng Liu, Pin Su
doaj   +1 more source

Performance investigation and optimization of Si:HfO2 FeFETs on a 28 nm bulk technology

, 2022
S.248-251The film thickness dependence of ferroelectric Si:HfO2 (10 nm and 30 nm) was studied with a focus on ferroelectric field effect transistor (FeFET) memory applications based on a 28 nm bulk technology.
Mikolajick, T., Yurchuk, E., Zaka, A., Mueller, S., Slesazeck, S., Müller, J., Herrmann, T.   +6 more
core   +1 more source

Nanocrystal-Embedded-Insulator (NEI) Ferroelectric FETs for Negative Capacitance Device and Non-Volatile Memory Applications

Nanoscale Research Letters, 2019
We report a novel nanocrystal-embedded-insulator (NEI) ferroelectric field-effect transistor (FeFET) with very thin unified-ferroelectric/dielectric (FE/DE) insulating layer, which is promising for low-voltage logic and non-volatile memory (NVM ...
Yue Peng, Genquan Han, Wenwu Xiao, Jibao Wu, Yan Liu, Jincheng Zhang, Yue Hao   +6 more
doaj   +1 more source

Physical Mechanisms of Reverse DIBL and NDR in FeFETs With Steep Subthreshold Swing

IEEE Journal of the Electron Devices Society, 2020
We have investigated transient Id - Vg and Id - Vd characteristics of ferroelectric field-effect transistor (FeFET) by simulation with ferroelectric model considering polarization switching dynamics.
Chengji Jin, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi   +3 more
doaj   +1 more source

Origin of multiple memory states in organic ferroelectric field-effect transistors [PDF]

, 2012
In this work, we investigate the ferroelectric polarization state in metal-ferroelectric-semiconductor-metal structures and in ferroelectric field-effect transistors (FeFET).
Li, X Xiaoran, Kam, Benjamin, Smits, Edsger C.P., Edsger C. P. Smits, Heremans, Paul, Smits, E.C.P., Li, Xiaoran, Cristoferi, C, Benjamin Kam, Cristoferi, C., Gelinck, G Gerwin, Genoe, J., Cristoferi, Claudio, Schols, Sarah, Alexander Mityashin, Smits, Edsger CP, Kam, B., Heremans, P Paul, Mityashin, A, Gerwin Gelinck, Heremans, P., Paul Heremans, Schols, S., Claudio Cristoferi, Jan Genoe, Li, X., Gelinck, G.H., Mityashin, Alexander, Mityashin, A., Kam, B, Genoe, Jan, Sarah Schols, Xiaoran Li, Gelinck, Gerwin   +33 more
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1F-1T Array: Current Limiting Transistor Cascoded FeFET Memory Array for Variation Tolerant Vector-Matrix Multiplication Operation

, 2023
424429This letter proposes a memory cell, denoted by 1F-1 T, consisting of a ferroelectric field-effect transistor (FeFET) cascaded with another current-limiting transistor (T).
Laleni, Nelli, Raffel, Yannick, Luca Pirro, Tian-Li Wu, Chohan, Talha, Yannick Raffel, Franz Müller, Müller, Franz, Chakrabarti, Bhaswar, De, Sourav, Sourav De, Kämpfe, Thomas, Lederer, Maximilian, Pirro, Luca, Jing-Hua Hsuen, Bhaswar Chakrabarti, Maximilian Lederer, Masud Rana Sk, Hsuen, Jing Hua, Talha Chohan, Thomas Kämpfe, Thunder, Sunanda, Nellie Laleni, Sunanda Thunder, Seidel, Konrad, Konrad Seidel, Wu, Tian Li, Sk, Masud Rana   +27 more
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Structural and electrical properties of ferroelectric BiFeO3/HfO2 gate stack for nonvolatile memory applications [PDF]

Journal of Advanced Dielectrics, 2018
Difficulties in the fabrication of direct interface of ferroelectric BiFeO3 on the gate of ferroelectric field effect transistor (FeFET) is well known.
Nitish Yadav, Kamal Prakash Pandey, Pramod Narayan Tripathi   +2 more
doaj   +1 more source

Embedding-Enhanced Probabilistic Modeling of Ferroelectric Field Effect Transistors (FeFETs)

CoRR
15 pages, 6 figures, manuscript yet not submitted ...
Tasnia Nobi Afee, Jack Hutchins, Md. Mazharul Islam 0006, Thomas Kampfe, Ahmedullah Aziz   +4 more
openaire   +2 more sources

An organic ferroelectric field effect transistor with poly(vinylidene fluoride-co-trifluoroethylene) nanostripes as gate dielectric

, 2014
We demonstrate the fabrication of an organic Ferroelectric Field Effect Transistor (FeFET) incorporating a ferroelectric gate dielectric made of nanostripes obtained by nanoimprinting poly(vinylidene fluoride-co-trifluoroethylene) over a layer of ...
Nysten, Bernard, Hu, Zhijun, Jonas, Alain M, Kassa, H.G., Marrani, A., Marrani, Alessio, Kassa, Hailu G, Breemen, A.J.J.M. van, van Breemen, Albert J. J. M., Gelinck, G.H., Jonas, A.M., Gelinck, G Gerwin, van Breemen, AJJM, Cai, Ronggang, Gelinck, Gerwin H., Kassa, Hailu Gebru, Hu, Z., Cai, R., Nysten, B., Jonas, Alain M.   +19 more
core   +1 more source

High-performance solution-processed polymer ferroelectric field-effect transistors [PDF]

, 2005
We demonstrate a rewritable, non-volatile memory device with flexible plastic active layers deposited from solution. The memory device is a ferroelectric field-effect transistor (FeFET) made with a ferroelectric fluoropolymer and a bisalkoxy-substituted ...
Touwslager, Fred J.,, Marsman, Albert W.,, Naber, Ronald C.G.,, Naber, R C G, Blom, PWM Paul, Marsman, Albert W, Gelinck, Gerwin H.,, Gelinck, G Gerwin, Setayesh, Sepas,, Leeuw, D M De, Tanase, Cristina, Touwslager, Fred J, Tanase, Cristina,, Setayesh, Sepas, Leeuw, Dago M. de,, Blom, Paul W.M.,   +15 more
core   +2 more sources