Results 11 to 20 of about 15,744,307 (196)

Ferroelectric Devices for In‐Memory and In‐Sensor Computing [PDF]

open access: yesAdvanced Science, EarlyView.
Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang   +5 more
wiley   +2 more sources

Energy-Efficient Ferroelectric Field-Effect Transistor-Based Oscillators for Neuromorphic System Design [PDF]

open access: yesIEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2020
Neuromorphic or bioinspired computational platforms, as an alternative for von-Neumann structures, have benefitted from the excellent features of emerging technologies in order to emulate the behavior of the biological brain in an accurate and energy ...
Hossein Eslahi   +2 more
doaj   +2 more sources

28 nm high-k-metal gate ferroelectric field effect transistors based synapses — A comprehensive overview

open access: yesMemories - Materials, Devices, Circuits and Systems, 2023
In this invited article we present a comprehensive overview of 28 nm high-k-metal gate-based ferroelectric field effect transistor devices for synaptic applications. The devices under test were fabricated on 300 mm wafers at GlobalFoundries.
Yannick Raffel   +10 more
doaj   +2 more sources

High‐Mobility and Reliability Ultra‐Thin‐Channel Oxide Semiconductor Field‐Effect Transistors for Chip‐Interconnect‐Embedded Logic and Ferroelectric Memory [PDF]

open access: yesAdvanced Materials, Volume 38, Issue 52, 16 September 2026.
BEOL‐compatible bilayer heterojunction oxide channel dual‐mode, memory‐logic ferroelectric transistor is fabricated to address long‐standing challenges of mobility and threshold voltage trade‐off by suppressing interfacial defects. This approach not only advances oxide semiconductors toward reliable high‐performance BEOL transistors but also opens new ...
Chun‐Kuei Chen   +12 more
wiley   +2 more sources

Direct Triboelectric Programming of a Ferroelectric Synaptic Transistor for Neuromorphic Tactile Perception [PDF]

open access: yesSmall, Volume 22, Issue 50, 7 September 2026.
Triboelectric signals directly program a ferroelectric synaptic transistor, enabling cumulative polarization‐controlled conductance modulation and neuromorphic tactile perception based on force‐ and frequency‐dependent mechanical stimuli. ABSTRACT Triboelectric nanogenerators provide a direct electrical interface to mechanical stimuli, yet most ...
Inhwa Lee   +3 more
wiley   +2 more sources

Automated, physics-guided AI framework for asymmetry-aware ferroelectric compact models [PDF]

open access: yesScientific Reports
Despite rapid progress in HfO₂-based ferroelectrics, asymmetry-aware characterization and its reflection in compact models remain insufficiently explored.
Joonhan Kim   +8 more
doaj   +2 more sources

Coupled ferroelectric-anisotropic optoelectronic synapse for polarization-sensitive neuromorphic vision [PDF]

open access: yesNature Communications
Polarization-sensitive photodetection and non-volatile memory are both vital for neuromorphic vision hardware but are rarely integrated within a single device.
Jiali Huo   +8 more
doaj   +2 more sources

Neuromorphic Near‐Sensor and In‐Sensor Computing Enabled by Next‐Generation Material‐Based Sensors [PDF]

open access: yesAdvanced Science, EarlyView.
This Review presents a structural framework that classifies neuromorphic sensing into near‐sensor and in‐sensor architectures, clarifying physical coupling between sensing and computation. The framework connects neural and synaptic device functions with recent advances in optical, mechanical, and chemical sensing, compares energy consumption and ...
Su Yeon Jung   +7 more
wiley   +2 more sources

FeFET-Based Computing-in-Memory Unit Circuit and Its Application [PDF]

open access: yesNanomaterials
With the increasing challenges facing silicon complementary metal oxide semiconductor (CMOS) technology, emerging non-volatile memory (NVM) has received extensive attention in overcoming the bottleneck.
Xiaojing Zha, Hao Ye
doaj   +2 more sources

Ferroelectric Relaxation Oscillators and Spiking Neurons

open access: yesIEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2019
We report the experimental demonstration of the ferroelectric field-effect transistor (FEFET)-based relaxation oscillators and spiking neurons. The ferroelectric relaxation oscillators and the ferroelectric spiking neurons, harnessing the abrupt ...
Zheng Wang, Asif I. Khan
doaj   +1 more source

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