Results 11 to 20 of about 553 (192)

Implementing Boolean Logic in Ferroelectric Field‐Effect Transistors

Advanced Electronic Materials, 2023
A method of using non‐volatile and fast ferroelectric field‐effect transistor (FeFET) devices to realize Boolean logic is proposed. First, the internal states are initialized.
Yung‐Fang Tan, Kai‐Chun Chang, Tsung‐Ming Tsai, Ting‐Chang Chang, Wen‐Chung Chen, Yu‐Hsuan Yeh, Chung‐Wei Wu, Chao‐Cheng Lin, Simon M. Sze   +8 more
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Demonstration of high-reconfigurability and low-power strong physical unclonable function empowered by FeFET cycle-to-cycle variation and charge-domain computing [PDF]

Nature Communications
Physical unclonable functions (PUFs) are of immense potential in authentication scenarios for Internet of Things (IoT) devices. For creditable and lightweight PUF applications, key attributes, including low power, high reconfigurability and large ...
Taixin Li, Xinrui Guo, Franz Müller, Sukhrob Abdulazhanov, Xiaoyang Ma, Hongtao Zhong, Yongpan Liu, Vijaykrishnan Narayanan, Huazhong Yang, Kai Ni, Thomas Kämpfe, Xueqing Li   +11 more
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Variability Study of Ferroelectric Field-Effect Transistors Towards 7nm Technology Node

IEEE Journal of the Electron Devices Society, 2021
The random variation sources have a significant influence on the performance of ferroelectric field-effect transistor (FeFET). In this work, comparative analysis on the process variation induced variability of FeFET towards a 7 nm technology node has ...
Gihun Choe, Shimeng Yu
doaj   +1 more source

Laterally gated ferroelectric field effect transistor (LG-FeFET) using α-In2Se3 for stacked in-memory computing array

Nature Communications, 2023
AbstractIn-memory computing is an attractive alternative for handling data-intensive tasks as it employs parallel processing without the need for data transfer. Nevertheless, it necessitates a high-density memory array to effectively manage large data volumes.
Sangyong Park, Dongyoung Lee, Juncheol Kang, Hojin Choi, Jin-Hong Park   +4 more
openaire   +3 more sources

Review of ferroelectric field‐effect transistors for three‐dimensional storage applications

Nano Select, 2021
The ferroelectric field‐effect transistor (FeFET) is one of the leading contenders to succeed charge‐trap‐based flash memory (CTF) devices in the current vertically‐integrated NAND flash storage market.
Hyeon Woo Park, Jae‐Gil Lee, Cheol Seong Hwang   +2 more
doaj   +1 more source

Impact of Series-Connected Ferroelectric Capacitor in HfO₂-Based Ferroelectric Field-Effect Transistors for Memory Application

IEEE Journal of the Electron Devices Society, 2020
In this work, we demonstrated a HfO2-based ferroelectric field-effect transistor (FeFET) in series with a HfAlO ferroelectric capacitor for memory application and further investigated the impact of the ferroelectric capacitor with different thicknesses ...
Wei-Dong Liu, Zi-You Huang, Jun Ma, Zhi-Wei Zheng, Chun-Hu Cheng   +4 more
doaj   +1 more source

Ferroelectric-Metal Field-Effect Transistor With Recessed Channel for 1T-DRAM Application

IEEE Journal of the Electron Devices Society, 2022
The ferroelectric-metal field-effect transistor with recessed channel (RC-FeMFET) is proposed for one transistor dynamic random-access memory (1T-DRAM). Through technology computer-aided design (TCAD) simulations, the effects of inter-metal insertion on ...
Kitae Lee, Sihyun Kim, Jong-Ho Lee, Byung-Gook Park, Daewoong Kwon   +4 more
doaj   +1 more source

Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure

Nanoscale Research Letters, 2020
Ferroelectric field effect transistor (FeFET) emerges as an intriguing non-volatile memory technology due to its promising operating speed and endurance.
Siqing Zhang, Yan Liu, Jiuren Zhou, Meng Ma, Anyuan Gao, Binjie Zheng, Lingfei Li, Xin Su, Genquan Han, Jincheng Zhang, Yi Shi, Xiaomu Wang, Yue Hao   +12 more
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High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty

, 2022
S.3769-3774We report the integration of a ferroelectric (FE) silicon-doped hafnium oxide material in ferroelectric field-effect transistor (FeFET) devices fabricated with an optimized interfacial layer in a gate-first scheme. The effect of increasing the
Büttner, T., Polakowski, P., Steinke, P., Zimmermann, K., Kämpfe, T., Pätzold, B., Czernohorsky, M., Ali, T., Hoffmann, R., Riedel, S., Seidel, K., Rudolph, M., Calvo, J., Löhr, D., Müller, J., Kühnel, K.   +15 more
core   +1 more source

Ultrathin Sub-5-nm Hf₁₋ₓZrₓO₂ for a Stacked Gate-all-Around Nanowire Ferroelectric FET With Internal Metal Gate

IEEE Journal of the Electron Devices Society, 2021
This study investigates a device’s ability to boost its on-state current and subthreshold behavior using a ferroelectric field-effect transistor (FeFET) with an ultrathin sub-5-nm Hf1-xZrxO2 (HZO). A conventional field-effect transistor (FET) with
Shen-Yang Lee, Chia-Chin Lee, Yi-Shan Kuo, Shou-Wei Li, Tien-Sheng Chao   +4 more
doaj   +1 more source