Results 71 to 80 of about 2,265 (156)

Ferroelectric Field Effect Device

, 2002
A ferroelectric field effect transistor with an oxide channel layer and a lead zirconate titanate gate oxide has been fabricated. The channel is a strontium ruthenate/titanate solid solution with n type semiconducting behavior, which has sufficient OFF ...
R. Ramesh, A. G. Schrott, J. A. Misewich, V. Nagarajan   +3 more
core   +1 more source

Bending Stability of Ferroelectric Gated Graphene Field Effect Transistor for Flexible Electronics

, 2023
In this work, we explored the potential of the ferroelectric gate of (Pb0.92La0.08)(Zr0.30Ti0.70)O3 (PLZT(8/30/70)) for flexible graphene field effect transistor (GFET) devices.
Lvkang Shen, Ming Liu, Yinchang Shen, Chunrui Ma, Guangliang Hu   +4 more
core   +1 more source

Self-Selective Non-Volatile Ferroelectric Memory Realized with Graphene Field Effect Transistor

, 2020
We experimentally demonstrated a new concept of non-destructive read-out process using transconductance measurements for ferroelectric random-access memory (FeRAM) using a graphene layer as the channel material of bottom-gated field effect transistor ...
Jung, Sungchul, Sheeraz, Muhammad, Kim, Tae-Heon, Kim, Junhyung, Kang, Seok-Hyung, Jo, Jaehyeong, Park, Jinyoung, Park, Kibog, Song, Wonho   +8 more
core  

Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

, 2012
High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility of 8.
Bhansali, Unnat Sampatraj, J. A. Caraveo-Frescas, Nayak, Pradipta K., H. N. Alshareef, Alshareef, Husam N., Pradipta K. Nayak, Unnat. S. Bhansali, Caraveo-Frescas, Jesus Alfonso   +7 more
core   +1 more source

A ferroelectric transparent thin-film transistor [PDF]

, 1996
Operation is demonstrated of a field-effect transistor made of transparant oxidic thin films, showing an intrinsic memory function due to the usage of a ferroelectric insulator.
Grosse-Holz, K.-O., Weening, R.P., Weening, RP, Giesbers, J. B., R. M. Wolf, Grosse-Holz, K. O., R. P. Weening, J. F. M. Cillessen, Cillessen, J.F.M., Wolf, R.M., G. Müller, M. W. J. Prins, Prins, M.W.J., Giesbers, J.B., Prins, M. W. J., Cillessen, J. F. M., Cillessen, JFM, Weening, R. P., Wolf, R. M., Grosse-Holz, K-O, Wolf, RM, Müller, G, Giesbers, Jacobus B, J. B. Giesbers, Prins, MWJ Menno, K.-O. Grosse-Holz, Müller, G.   +26 more
core   +1 more source

Ferroelectric Material Application: Modeling Ferroelectric Field Effect Transistor Characteristics from Micro to Nano

, 2006
All present ferroelectric transistors have been made on the micrometer scale. Existing models of these devices do not take into account effects of nanoscale ferroelectric transistors.
MacLeod, Todd, C., Ho, Fat Duen
core  

A Study of Charge Control and Gate Tunneling in a Ferroelectric-Oxide-Silicon Field Effect Transistor

, 2001
It is known that conventional metal-oxide-silicon field-effect transistor (MOSFET) devices will have gate tunneling related problems at very thin oxide thicknesses (dox ≤ 20 Å).
Jasprit Singh, Yih-Yin Lin, Yifei Zhang
core   +1 more source

A Novel Metal-Ferroelectric-Semiconductor Field-Effect Transistor Memory Cell Design

, 2004
The use of a Metal-Ferroelectric-Semiconductor Field-Effect Transistor (MFSFET) in a resistive-load SRAM memory cell has been investigated A typical two-transistor resistive-load SRAM memory cell architecture is modified by replacing one of the NMOS ...
Bailey, Mark, Phillips, Thomas A., Ho, Fat Duen   +2 more
core  

Experimental confirmation of temperature dependent negative capacitance in ferroelectric field effect transistor

, 2012
In this paper, we report the basic design conditions and the experimental confirmation of a temperature dependent negative capacitance (NC) effect in a ferroelectric field-effect-transistor (Fe-FET).
Salvatore, Giovanni A., Rusu, Alexandru, Giovanni A. Salvatore, Alexandru Rusu, Adrian M. Ionescu, Ionescu, Adrian M.   +5 more
core   +1 more source

Polarization Modulation in Ferroelectric Organic Field-Effect Transistors

, 2018
The polarization modulation effect of the gate dielectric on the performance of metal-oxide-semiconductor field-effect transistors has been investigated for more than a decade.
Muller, T., Laudari, A., Mazza, A. R., Guha, S., Khanra, S., Daykin, A., Cummings, F., Ghosh, Kartik C., Miceli, P. F.   +8 more
core   +1 more source