Results 91 to 100 of about 15,745,352 (243)

Phase Diagrams and Piezoelectric Properties of Wurtzite Al1−x−yScxGdyN Heterostructural Alloys

Advanced Science, EarlyView.
This study demonstrates ferroelectricity and piezoelectric properties improvement of quaternary wurtzite Al1−x−yScxGdyN${\rm Al}_{1-x-y}{\rm Sc}_x{\rm Gd}_y{\rm N}$ films, guided by density functional theory calculations. Wurtzite Al1−x−yScxGdyN${\rm Al}_{1-x-y}{\rm Sc}_x{\rm Gd}_y{\rm N}$ films have a high optical bandgap, enhanced piezoelectric ...
Julia L. Martin, Cheng‐Wei Lee, Nate S.P. Bernstein, Thi Nguyen, Ande Bryan, Eli Cooper, John S. Mangum, Sage R. Bauers, Andriy Zakutayev, Keisuke Yazawa, Prashun Gorai, Rebecca W. Smaha   +11 more
wiley   +1 more source

Silicon spin diffusion transistor: materials, physics and device characteristics

, 2005
The realisation that eaveryday electronics has ignored the spin of the carrier in favour of its charge is the foundation of the field of spintronics. Starting with simple two-terminal devices based on GMR and tunnel magnetoresistance, the technology has ...
Tiusan, C, C.V. Tiusan, Gregg, John, S.M. Thompson, Ensell, G, Thompson, SM, Thompson, S M, Gregg, J F, Dennis, CL, Tiusan, CV, Ensell, GJ, Gregg, JF, C.L. Dennis, J.F. Gregg, G.J. Ensell, Dennis, C L   +15 more
core   +2 more sources

The Balancing Act in Ferroelectric Transistors: How Hard Can It Be?

Micromachines, 2018
For some years now, the ever continuing dimensional scaling has no longer been considered to be sufficient for the realization of advanced CMOS devices.
Raymond J. E. Hueting
doaj   +1 more source

Two‐Dimensional Triferroics: From Fundamental Couplings to Multifunctional Applications

Advanced Science, EarlyView.
This graphic summarizes the three main types of currently reported 2D triferroic couplings. From the structural perspective, existing systems can be broadly classified into two categories, which exhibit distinct symmetry features and coupling behaviors. Beyond the lattice difference, a third type involves the interplay among ferroelectricity, magnetism,
Yang Li, Jialin Gong, Zhiqing Li
wiley   +1 more source

Nanocrystal-Embedded-Insulator (NEI) Ferroelectric FETs for Negative Capacitance Device and Non-Volatile Memory Applications

Nanoscale Research Letters, 2019
We report a novel nanocrystal-embedded-insulator (NEI) ferroelectric field-effect transistor (FeFET) with very thin unified-ferroelectric/dielectric (FE/DE) insulating layer, which is promising for low-voltage logic and non-volatile memory (NVM ...
Yue Peng, Genquan Han, Wenwu Xiao, Jibao Wu, Yan Liu, Jincheng Zhang, Yue Hao   +6 more
doaj   +1 more source

Flexoelectricity in Photoconversion: Fundamentals, Materials, and Outlooks

Advanced Science, EarlyView.
Mechanical bending of a flexible cantilever induces a strain gradient in the photoactive material. The resulting flexoelectric field couples with photovoltaic and photoconductive effects, modulating charge generation, separation, and collection. A comparative analysis of oxide perovskites, halide perovskites, and two‐dimensional materials is presented,
Xiang Huang, Feng Li, Rongkun Zheng
wiley   +1 more source

A Reconfigurable Ferroelectric Transistor as An Ultra‐Scaled Cell for Low‐Power In‐Memory Data Processing

Advanced Electronic Materials
Compact in‐memory computing architectures are desirable to embed artificial intelligence (AI) in resource‐restricted edge devices. However, current technologies face limitations in both the area and energy efficiency. Here, a reconfigurable ferroelectric
Zhongyunshen Zhu, Anton E. O. Persson, Lars‐Erik Wernersson   +2 more
doaj   +1 more source

Ferroelectric Hafnium Oxide: A Potential Game‐Changer for Nanoelectronic Devices and Systems

Advanced Electronic Materials
The discovery of ferroelectricity in hafnium oxide has propelled ferroelectric devices to the forefront of nanoelectronics, offering distinct advantages over alternative technologies.
David Lehninger, Franz Müller, Yannick Raffel, Shouzhuo Yang, Markus Neuber, Sukhrob Abdulazhanov, Thomas Kämpfe, Konrad Seidel, Maximilian Lederer   +8 more
doaj   +1 more source

Impact of Work-Function Variation in Ferroelectric Field-Effect Transistor

IEEE Journal of the Electron Devices Society
We analyzed the impact of work-function variation (WFV) in ferroelectric field-effect transistor (FeFET). To analyze the operation characteristics, we employed the technology computer-aided design (TCAD) simulations. After evaluating ferroelectricity (FE)
Su Yeon Jung, Hyunwoo Kim, Jongmin Lee, Jang Hyun Kim   +3 more
doaj   +1 more source

Laterally gated ferroelectric field effect transistor (LG-FeFET) using α-In₂Se₃ for stacked in-memory computing array. [PDF]

Nat Commun, 2023
Park S, Lee D, Kang J, Choi H, Park JH.
europepmc   +1 more source