Results 101 to 110 of about 15,745,352 (243)

Photonic‐Enabled Energy‐Efficient Transparent Neuromorphic Computing Devices: A Review

Advanced Science, EarlyView.
Transparent photonic neuromorphic computing devices merge optics and brain‐inspired computing to overcome von Neumann bottlenecks with ultrafast, low‐energy processing. By exploiting transparent oxides, 2D materials, phase‐change materials, and hybrid heterostructures, these platforms enable photonic synapses, memory, and logic for see‐through edge ...
Shuvaraj Ghosh, Ki‐bum Lee, Junghyeon Lee, Seunghee Cho, Malkeshkumar Patel, Hangfei Li, Yu Wen, Ye Zhou, Joondong Kim   +8 more
wiley   +1 more source

Room-temperature ferroelectric, piezoelectric and resistive switching behaviors of single-element Te nanowires

Nature Communications
Ferroelectrics are essential in memory devices for multi-bit storage and high-density integration. Ferroelectricity mainly exists in compounds but rare in single-element materials due to their lack of spontaneous polarization in the latter.
Jinlei Zhang, Jiayong Zhang, Yaping Qi, Shuainan Gong, Hang Xu, Zhenqi Liu, Ran Zhang, Mohammad A. Sadi, Demid Sychev, Run Zhao, Hongbin Yang, Zhenping Wu, Dapeng Cui, Lin Wang, Chunlan Ma, Xiaoshan Wu, Ju Gao, Yong P. Chen, Xinran Wang, Yucheng Jiang   +19 more
doaj   +1 more source

High-Mobility and Reliability Ultra-Thin-Channel Oxide Semiconductor Field-Effect Transistors for Chip-Interconnect-Embedded Logic and Ferroelectric Memory. [PDF]

Adv Mater
BEOL‐compatible bilayer heterojunction oxide channel dual‐mode, memory‐logic ferroelectric transistor is fabricated to address long‐standing challenges of mobility and threshold voltage trade‐off by suppressing interfacial defects. This approach not only advances oxide semiconductors toward reliable high‐performance BEOL transistors but also opens new ...
Chen CK, Hooda S, Sivan M, Wan Q, Villena MA, Beltrando B, Xu Z, Fang Z, Zamburg E, Roldán JB, Larcher L, Thareja G, Thean AV.   +12 more
europepmc   +2 more sources

Ferroelectric Material Application: Modeling Ferroelectric Field Effect Transistor Characteristics from Micro to Nano [PDF]

, 2006
All present ferroelectric transistors have been made on the micrometer scale. Existing models of these devices do not take into account effects of nanoscale ferroelectric transistors.
MacLeod, Todd, C., Ho, Fat Duen
core  

Polarization Dynamics in Ferroelectrics: Insights Enabled by Machine Learning Molecular Dynamics

Advanced Science, EarlyView.
Machine learning molecular dynamics is presented as a route to capture polarization switching, domain wall kinetics, topological polar textures, and polar mechanical coupling beyond the limits of conventional atomistic methods. This Perspective surveys recent progress and identifies key methodological directions, including long‐range electrostatics ...
Dongyu Bai, Ri He, Junxian Liu, Liangzhi Kou   +3 more
wiley   +1 more source

Molecularly Engineered Wing‐Shaped Azobenzene Memristors for Logic‐in‐Memory and Edge Visual Intelligence

Advanced Science, EarlyView.
Rational engineering of terminal substituents in symmetric azobenzene‐based molecules enables precise control over conformationally coupled charge‐transfer processes. This design yields tunable nonvolatile resistive memory behaviors, ranging from write‐once‐read‐many‐times (WORM) to rewritable switching.
Yanze Liu, Tao Han, Jiahui Ding, Hong Lian, Lingling Yao, Zhaoxin Xu, Xingyu Zhang, Shuanglong Wang, Jiangnan Xia, Tianchi Zhang, Weiwei Kang, Qingchen Dong   +11 more
wiley   +1 more source

Hydrogen‐Stabilized Self‐Rectifying Memristor Arrays for Reliable Multilevel Synapses in Transformer‐Based Keyword Spotting

Advanced Science, EarlyView.
A non‐filamentary self‐rectifying HfO2/TiOx resistive random‐access memory integrates H2 annealing with an incremental step pulse with verify algorithm to achieve stable and linear analog conductance modulation. The device enables low‐current 6‐bit multilevel operation while suppressing sneak current in crossbar arrays. Implemented in Transformer‐based
Seonjeong Lee, Seohyeon Ju, Won Joo Lee, Myounggon Kang, Sungjun Kim, Yoon Kim   +5 more
wiley   +1 more source

Intrinsically Stretchable Piezoelectric Nanocomposites for Artificial Ultrasonic Sensory Synapse. [PDF]

Adv Mater
Applying ultrasonic stimulations to a soft‐stretchable underwater piezoelectric sensor based on the soft‐stretchable nanocomposite from the thermal cross‐linking between the ─C─F group of P(VDF‐TrFE) and the ─NH2 group of (PEG‐diamine) with incorporating amine‐terminated BTO@APTES nanofillers on the soft PDMS substrates generated high piezoelectric ...
Do TD, Trung TQ, Bhuyan P, Nguyen MC, Nguyen QT, Jo N, Kim Y, Ha TDC, Kim MG, Park S, Yu WJ, Lee NE.   +11 more
europepmc   +2 more sources

A Van Der Waals Ferroelectric Schottky Junction Field-effect Transistor

Two-dimensional ferroelectric field-effect transistors hold great promise for next-generation electronics due to their scalability, low power operation, and non-volatile memory capabilities.
Zou, Lingrui, Zhang, Xixiang, Dong, Zexin, Wang, Zhongyi, He, Xin, Yu, Bin, Wang, Baoyu   +6 more
core   +1 more source

Strontium Bismuth Tantalate Based Ferroelectric Gate Field Effect Transistor with Yttrium Oxide as the Buffer Layer

, 1997
We report the first demonstration of an enhancement mode n-channel metal -ferroelectric-semiconductor field effect transistor (MFISFET) realized directly on silicon with yttrium oxide as the buffer layer.
Yong-Tae Kim, T. S. Kalkur, Myoung-Ho Lim   +2 more
core   +1 more source