Results 121 to 130 of about 15,745,352 (243)
Nanoparticle Synthesis via Thin Film Ferroelectric Templates:Surface interactions and effects [PDF]
, 2008 An investigation into the processes taking place at the surface interface of ferroelectric Pb(Zr1-x,Tix)O3 immersed in metal salt solution under ultraviolet illumination is presented.
Jones, Paul M.
core +1 more source
Advanced Science, EarlyView.Freestanding oxide membranes transform twistronics by enabling deterministic stacking, strain release, and integration with two‐dimensional materials. A unified framework links local atomic registry to structural reconstruction, polar textures, charge modulation, flat bands, and magnetic responses, while identifying the fabrication and characterization
Puneet Kaur, Rahul, Jan‐Chi Yang
wiley +1 more source
IEEE Journal of the Electron Devices SocietyFerroelectric polarization charge in doped-HfO2 such as HfZrOx (HZO) has a high surface density (~1014 cm-2) compared to the channel carrier (~1013 cm-2), thereby, ferroelectric polarization induces high electric field near the channel ...
Song-Hyeon Kuk +5 more
doaj +1 more source
Microscopia de força piezoeléctrica de relaxors ferroeléctricos [PDF]
, 2010 Doutoramento em Ciência e Engenharia de MateriaisNesta tese, ferroeléctricos relaxor (I dont know uf the order is correct) de base Pb das familias (Pb,La)(Zr,Ti)O3 (PLZT), Pb(Mg1/3,Nb2/3)O3-PbTiO3 (PMN-PT), Pb(Zn1/3,Nb2/3)O3-PbTiO3 (PZN-PT) foram ...
Kiselev, Dmitry
core
Robust and Compatible Ferroelectric Memories with Polycrystalline TiO2 Channel for 3D Integration
Advanced Electronic Materials, EarlyView.Robust and monolithic 3D compatible ferroelectric memories are realized using the polycrystalline TiO2 channel‐based FeFET. The review covers physical mechanisms of the TiO2 channel FeFET, quantitative benchmarking, and advanced planar/vertical architectures for monolithic 3D integration based on HfO2‐TiO2 gate stack, offering a roadmap for reliable ...
Xujin Song +10 more
wiley +1 more source
A Novel Metal-Ferroelectric-Semiconductor Field-Effect Transistor Memory Cell Design
, 2004 The use of a Metal-Ferroelectric-Semiconductor Field-Effect Transistor (MFSFET) in a resistive-load SRAM memory cell has been investigated A typical two-transistor resistive-load SRAM memory cell architecture is modified by replacing one of the NMOS ...
Bailey, Mark +2 more
core
Switching Characteristics of Ferroelectric Transistor Inverters [PDF]
, 2010 This paper presents the switching characteristics of an inverter circuit using a ferroelectric field effect transistor, FeFET. The propagation delay time characteristics, phl and plh are presented along with the output voltage rise and fall times, rise ...
Ho, Fat D. +3 more
core
Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference
Advanced Electronic Materials, EarlyView.This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho +6 more
wiley +1 more source
Ferroionic Electrostatic Landscapes Enabling Wireless Energy Harvesting, Storage, and Sensing
Advanced Electronic Materials, EarlyView.By integrating experiments and electrostatic field simulations, we show that long‐range wireless coupling in Li‐based ferroionics devices emerges from the cooperative interaction between ionic migration and electronic polarization. This coupling sustains self‐polarized electrostatic fields across centimeter‐scale air gaps without external bias or ...
M. Helena Braga +7 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.In this work, low‐resolution infrared imaging is combined with a 28 nm FeFET IMC architecture to enable compact, energy‐efficient edge inference. MLC FeFET devices are experimentally characterized, and controlled multi‐level current accumulation is validated at crossbar array level.
Alptekin Vardar +9 more
wiley +1 more source