Results 131 to 140 of about 15,745,352 (243)
Silicon Nitride Resistive Memories
Advanced Electronic Materials, EarlyView.Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis +7 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.ABSTRACT Machine learning and Artificial Intelligence (AI) tasks have stretched traditional hardware to its limits. In‐hardware computation is a novel approach that aims to run complex operations, such as matrix–vector multiplication, directly at the device level for increased efficiency.
Juan P. Martinez +10 more
wiley +1 more source
Physics‐Based Compact Modeling of Advanced 3D Nanoscale Vertical NAND Flash Memory
Advanced Electronic Materials, EarlyView.For advanced 3D NAND flash memory, a unified compact model for SPICE is proposed that spans from the intrinsic unit cell to the full string and captures the electrostatic coupling with adjacent inhibit strings. It can successfully predict read behavior, program/erase dynamics, and interactions between neighboring cells, reflecting array‐level behavior ...
Ilho Myeong, Seonho Shin, Ickhyun Song
wiley +1 more source
Environmental Effects on RRAM Cells Based on 2D Halide Perovskite Materials
Advanced Electronic Materials, EarlyView.RRAM offers high speed, scalability, and low power, positioning it as a next‐generation non‐volatile memory. Two‐dimensional halide perovskites show promise due to tunable optoelectronic properties and flexible processing but suffer from environmental sensitivity. This review examines degradation from humidity, temperature, light, and strain, discusses
Mojtaba Joodaki +3 more
wiley +1 more source
, 2017 Zengtao Bao,1,* Jialin Sun,2,* Xiaoqian Zhao,2 Zengyao Li,2 Songkui Cui,2 Qingyang Meng,2 Ye Zhang,2 Tong Wang,2 Yanfeng Jiang3 1Department of Gastrointestinal Surgery, Lianyungang First People’s Hospital, Affiliated Hospital of the Clinical ...
Jiang Y +8 more
core
Artificial Intelligence for Fluorite Ferroelectric Materials: From Discovery to Optimization
Advanced Electronic Materials, EarlyView.Artificial intelligence accelerates the discovery and optimization of HfO2‐based fluorite ferroelectrics by linking synthesis, structure, properties, and device performance. Machine learning, deep‐learning analysis, and AI‐driven atomistic modeling enable predictive design, dopant screening, and closed‐loop optimization toward next‐generation ...
Faizan Ali +3 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.Extrinsic alkali cations regulate field‐driven ion migration and hysteresis in lateral MAPbBr3 devices. Combined electrical measurements and DFT calculations reveal distinct ion‐dependent transport behaviors, with Li+ producing the strongest modulation due to its lower migration barrier.
Hongxin Yuan +10 more
wiley +1 more source
, 2010 Single-wall carbon nanotubes are candidates for a number of building blocks in nanoscale electronics. With respect to the assembly of carbon nanotube field effect transistor, the dielectrophoresis technology is adopted, which assembles SWCNTs between the
Xu K(许可) +4 more
core
Advanced Electronic Materials, EarlyView.Selector integration enables scalable memristor crossbar arrays by suppressing sneak‐path currents and improving array selectivity. This review summarizes integration strategies, device requirements, challenges, and opportunities for high‐density memory, compute‐in‐memory, and neuromorphic computing systems.
Zohreh Hajiabadi +3 more
wiley +1 more source