Results 1 to 10 of about 8,462 (295)

Memristive Cluster Based Compact High-Density Nonvolatile Memory Design and Application for Image Storage [PDF]

Micromachines, 2022
As a new type of nonvolatile device, the memristor has become one of the most promising technologies for designing a new generation of high-density memory.
Jingru Sun, Meiqi Jiang, Qi Zhou, Chunhua Wang, Yichuang Sun   +4 more
doaj   +2 more sources

Recent Advances in Organic Phototransistors: Nonvolatile Memory, Artificial Synapses, and Photodetectors [PDF]

Small Science, 2022
Recent research interest in organic field‐effect transistor (FET) memory has shifted to the functionality of photoprogramming in terms of its potential uses in multibit data storage and light‐assisted encryption and its low‐energy consumption and broad ...
Yan-Cheng Lin, Wei-Chen Yang, Yun-Chi Chiang, Wen-Chang Chen   +3 more
doaj   +2 more sources

Skyrmion-mediated nonvolatile ternary memory

Scientific Reports
Multistate memory systems have the ability to store and process more data in the same physical space as binary memory systems, making them a potential alternative to existing binary memory systems.
Md Mahadi Rajib, Namita Bindal, Ravish Kumar Raj, Brajesh Kumar Kaushik, Jayasimha Atulasimha   +4 more
doaj   +4 more sources

Emerging CMOS Compatible Magnetic Memories and Logic

IEEE Journal of the Electron Devices Society, 2021
As scaling of the feature size - the main driving force behind an outstanding increase of the performance of modern electronic circuits - displays signs of saturation, the main focus of engineering research in microelectronics shifts towards finding new ...
Johannes Ender, Simone Fiorentini, Roberto L. De Orio, Wolfgang Goes, Viktor Sverdlov, Siegfried Selberherr   +5 more
doaj   +1 more source

Numerical Analysis of Deterministic Switching of a Perpendicularly Magnetized Spin-Orbit Torque Memory Cell

IEEE Journal of the Electron Devices Society, 2021
We propose a magnetic field-free spin-orbit torque switching scheme based on two orthogonal current pulses, for which deterministic switching is demonstrated via numerical simulations.
R. L. de Orio, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov   +5 more
doaj   +1 more source

Spin and charge drift-diffusion in ultra-scaled MRAM cells

Scientific Reports, 2022
Designing advanced single-digit shape-anisotropy MRAM cells requires an accurate evaluation of spin currents and torques in magnetic tunnel junctions (MTJs) with elongated free and reference layers.
Simone Fiorentini, Mario Bendra, Johannes Ender, Roberto L. de Orio, Wolfgang Goes, Siegfried Selberherr, Viktor Sverdlov   +6 more
doaj   +1 more source

Finite Element Approach for the Simulation of Modern MRAM Devices

Micromachines, 2023
Because of their nonvolatile nature and simple structure, the interest in MRAM devices has been steadily growing in recent years. Reliable simulation tools, capable of handling complex geometries composed of multiple materials, provide valuable help in ...
Simone Fiorentini, Nils Petter Jørstad, Johannes Ender, Roberto Lacerda de Orio, Siegfried Selberherr, Mario Bendra, Wolfgang Goes, Viktor Sverdlov   +7 more
doaj   +1 more source

A Comprehensive Study of Temperature and Its Effects in SOT-MRAM Devices

Micromachines, 2023
We employ a fully three-dimensional model coupling magnetization, charge, spin, and temperature dynamics to study temperature effects in spin-orbit torque (SOT) magnetoresistive random access memory (MRAM).
Tomáš Hadámek, Nils Petter Jørstad, Roberto Lacerda de Orio, Wolfgang Goes, Siegfried Selberherr, Viktor Sverdlov   +5 more
doaj   +1 more source

Optimization of a Spin-Orbit Torque Switching Scheme Based on Micromagnetic Simulations and Reinforcement Learning

Micromachines, 2021
Spin-orbit torque memory is a suitable candidate for next generation nonvolatile magnetoresistive random access memory. It combines high-speed operation with excellent endurance, being particularly promising for application in caches. In this work, a two-
Roberto L. de Orio, Johannes Ender, Simone Fiorentini, Wolfgang Goes, Siegfried Selberherr, Viktor Sverdlov   +5 more
doaj   +1 more source

Editorial for the Special Issue on Magnetic and Spin Devices

Micromachines, 2022
As scaling of semiconductor devices displays signs of saturation, the focus of research in microelectronics shifts towards finding new computing paradigms based on novel physical principles [...]
Viktor Sverdlov, Nuttachai Jutong
doaj   +1 more source