Results 1 to 10 of about 11,230 (168)
Twisted atomic magnetic tunnel junctions with multiple nonvolatile states [PDF]
Magnetic tunnel junctions (MTJs), a key spintronic device, have shown rapid development recently using two-dimensional (2D) magnets. In particular, MTJs formed from twisted 2D antiferromagnets (AFMs) push nonvolatile magnetic information storage to the ...
Yuliang Chen +9 more
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On-chip graphene photodetectors with a nonvolatile p–i–n homojunction [PDF]
Graphene’s unique photothermoelectric (PTE) effect, combined with its compatibility for on-chip fabrication, promises its development in chip-integrated photodetectors with ultralow dark-current and ultrafast speed.
Ruijuan Tian +17 more
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An 8kb RRAM-Based Nonvolatile SRAM with Pre-Decoding and Fast Storage/Restoration Time
Combining the advantages of low-power consumption of static random access memory (SRAM) with high stability and nonvolatile of resistive memory (RRAM), an improved 8T2R nonvolatile SRAM (nvSRAM) memory cell was proposed in this paper.
Jiayu Yin +4 more
doaj +1 more source
Spin and charge drift-diffusion in ultra-scaled MRAM cells
Designing advanced single-digit shape-anisotropy MRAM cells requires an accurate evaluation of spin currents and torques in magnetic tunnel junctions (MTJs) with elongated free and reference layers.
Simone Fiorentini +6 more
doaj +1 more source
Emerging CMOS Compatible Magnetic Memories and Logic
As scaling of the feature size - the main driving force behind an outstanding increase of the performance of modern electronic circuits - displays signs of saturation, the main focus of engineering research in microelectronics shifts towards finding new ...
Johannes Ender +5 more
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We propose a magnetic field-free spin-orbit torque switching scheme based on two orthogonal current pulses, for which deterministic switching is demonstrated via numerical simulations.
R. L. de Orio +5 more
doaj +1 more source
Finite Element Approach for the Simulation of Modern MRAM Devices
Because of their nonvolatile nature and simple structure, the interest in MRAM devices has been steadily growing in recent years. Reliable simulation tools, capable of handling complex geometries composed of multiple materials, provide valuable help in ...
Simone Fiorentini +7 more
doaj +1 more source
A Comprehensive Study of Temperature and Its Effects in SOT-MRAM Devices
We employ a fully three-dimensional model coupling magnetization, charge, spin, and temperature dynamics to study temperature effects in spin-orbit torque (SOT) magnetoresistive random access memory (MRAM).
Tomáš Hadámek +5 more
doaj +1 more source
Brain-Inspired Hardware Solutions for Inference in Bayesian Networks
The implementation of inference (i.e., computing posterior probabilities) in Bayesian networks using a conventional computing paradigm turns out to be inefficient in terms of energy, time, and space, due to the substantial resources required by floating ...
Leila Bagheriye, Johan Kwisthout
doaj +1 more source
In this work, a high-performance nanoscale complementary low Schottky barrier (CLSB) nonvolatile bidirectional reconfigurable field effect transistor (NBRFET) based on dual metal silicide source/drain (S/D) contacts (CLSB-NBRFET) is proposed.
Liu Xi +6 more
doaj +1 more source

