Results 21 to 30 of about 20,887 (309)

A Comprehensive Study of Temperature and Its Effects in SOT-MRAM Devices

Micromachines, 2023
We employ a fully three-dimensional model coupling magnetization, charge, spin, and temperature dynamics to study temperature effects in spin-orbit torque (SOT) magnetoresistive random access memory (MRAM).
Tomáš Hadámek, Nils Petter Jørstad, Roberto Lacerda de Orio, Wolfgang Goes, Siegfried Selberherr, Viktor Sverdlov   +5 more
doaj   +1 more source

Brain-Inspired Hardware Solutions for Inference in Bayesian Networks

Frontiers in Neuroscience, 2021
The implementation of inference (i.e., computing posterior probabilities) in Bayesian networks using a conventional computing paradigm turns out to be inefficient in terms of energy, time, and space, due to the substantial resources required by floating ...
Leila Bagheriye, Johan Kwisthout
doaj   +1 more source

A Complementary Low Schottky Barrier Nonvolatile Bidirectional Reconfigurable Field Effect Transistor Based on Dual Metal Silicide S/D Contacts

IEEE Access, 2023
In this work, a high-performance nanoscale complementary low Schottky barrier (CLSB) nonvolatile bidirectional reconfigurable field effect transistor (NBRFET) based on dual metal silicide source/drain (S/D) contacts (CLSB-NBRFET) is proposed.
Liu Xi, Ya Wang, Meile Wu, Lin Qi, Mengmeng Li, Shouqiang Zhang, Xiaoshi Jin   +6 more
doaj   +1 more source

A Facile Hydrothermal Synthesis and Resistive Switching Behavior of α-Fe₂O₃ Nanowire Arrays

Molecules, 2023
A facile hydrothermal process has been developed to synthesize the α-Fe2O3 nanowire arrays with a preferential growth orientation along the [110] direction.
Zhiqiang Yu, Jiamin Xu, Baosheng Liu, Zijun Sun, Qingnan Huang, Meilian Ou, Qingcheng Wang, Jinhao Jia, Wenbo Kang, Qingquan Xiao, Tinghong Gao, Quan Xie   +11 more
doaj   +1 more source

Analysis of Switching Under Fixed Voltage and Fixed Current in Perpendicular STT-MRAM

IEEE Journal of the Electron Devices Society, 2020
In spin-transfer torque magnetoresistive random access memory, the magnetization dynamics of a free layer is usually assumed to be determined by the torque created via a position-independent current density.
S. Fiorentini, R. L. de Orio, S. Selberherr, J. Ender, W. Goes, V. Sverdlov   +5 more
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Tunable Resistive Switching Behaviors and Mechanism of the W/ZnO/ITO Memory Cell

Molecules, 2023
A facile sol–gel spin coating method has been proposed for the synthesis of spin-coated ZnO nanofilms on ITO substrates. The as-prepared ZnO-nanofilm-based W/ZnO/ITO memory cell showed forming-free and tunable nonvolatile multilevel resistive switching ...
Zhiqiang Yu, Jinhao Jia, Xinru Qu, Qingcheng Wang, Wenbo Kang, Baosheng Liu, Qingquan Xiao, Tinghong Gao, Quan Xie   +8 more
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Different Withering Times Affect Sensory Qualities, Chemical Components, and Nutritional Characteristics of Black Tea

Foods, 2021
The present study emphasizes the effect of withering time set at 4 ± 0.5 h (WT4), 6 ± 0.5 h (WT6), 8 ± 0.5 h (WT8), 10 ± 0.5 h (WT10), and 12 ± 0.5 h (WT12) on the sensory qualities, chemical components, and nutritional characteristics of black tea.
Bernard Ntezimana, Yuchuan Li, Chang He, Xinlei Yu, Jingtao Zhou, Yuqiong Chen, Zhi Yu, Dejiang Ni   +7 more
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Optimization of a Spin-Orbit Torque Switching Scheme Based on Micromagnetic Simulations and Reinforcement Learning

Micromachines, 2021
Spin-orbit torque memory is a suitable candidate for next generation nonvolatile magnetoresistive random access memory. It combines high-speed operation with excellent endurance, being particularly promising for application in caches. In this work, a two-
Roberto L. de Orio, Johannes Ender, Simone Fiorentini, Wolfgang Goes, Siegfried Selberherr, Viktor Sverdlov   +5 more
doaj   +1 more source

Nonvolatile optical phase shift in ferroelectric hafnium zirconium oxide

Nature Communications
A nonvolatile optical phase shifter is a critical component for enabling the fabrication of programmable photonic integrated circuits on a Si photonics platform, facilitating communication, computing, and sensing. Although ferroelectric materials such as
Kazuma Taki, Naoki Sekine, Kouhei Watanabe, Yuto Miyatake, Tomohiro Akazawa, Hiroya Sakumoto, Kasidit Toprasertpong, Shinichi Takagi, Mitsuru Takenaka   +8 more
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The Effect of Nitrogen Annealing on the Resistive Switching Characteristics of the W/TiO₂/FTO Memory Device

Sensors, 2023
In this paper, the effect of nitrogen annealing on the resistive switching characteristics of the rutile TiO2 nanowire-based W/TiO2/FTO memory device is analyzed.
Zhiqiang Yu, Xu Han, Jiamin Xu, Cheng Chen, Xinru Qu, Baosheng Liu, Zijun Sun, Tangyou Sun   +7 more
doaj   +1 more source