Results 11 to 20 of about 20,887 (309)

Nonvolatile storage in photorefractive crystals [PDF]

Optics Letters, 1994
We propose and demonstrate a nonvolatile holographic recording system for storing two-dimensional images. The readout light in this system is not absorbed by the holographic medium, and the data are preformatted or postformatted so that lines from different holograms are interleaved to satisfy the Bragg-matching condition.
D, Psaltis, F, Mok, H Y, Li
core   +6 more sources

Nonvolatile Electric Control of Antiferromagnet CrSBr

Nano Letters
van der Waals magnets are emerging as a promising material platform for electric field control of magnetism, offering a pathway towards the elimination of external magnetic fields from spintronic devices. A further step is the integration of such magnets with electrical gating components which would enable nonvolatile control of magnetic states ...
Jo, Junhyeon, Mañas-Valero, Samuel, Coronado, Eugenio, Casanova, Fèlix, Gobbi, Marco, Hueso, Luis E.   +5 more
core   +7 more sources

Twisted atomic magnetic tunnel junctions with multiple nonvolatile states. [PDF]

Nat Commun
Magnetic tunnel junctions (MTJs), a key spintronic device, have shown rapid development recently using two-dimensional (2D) magnets. In particular, MTJs formed from twisted 2D antiferromagnets (AFMs) push nonvolatile magnetic information storage to the ...
Chen Y, Samanta K, Healey AJ, Fang C, Zhang H, Shahed NA, Broadway DA, Ernst A, Tsymbal EY, Parkin SSP.   +9 more
europepmc   +2 more sources

Nonvolatile Resistive Switching in Layered InSe via Electrochemical Cation Diffusion

Advanced Electronic Materials, 2022
2D materials are increasingly being investigated for their nonvolatile switching properties as a step toward downscaling of core electronic elements. Here, the interplay between electrochemically active silver (Ag) cations and layered indium selenide ...
Aishani Mazumder, Taimur Ahmed, Edwin Mayes, Sherif Abdulkader Tawfik, Salvy P. Russo, Mei Xian Low, Abhishek Ranjan, Sivacarendran Balendhran, Sumeet Walia   +8 more
doaj   +2 more sources

On-chip graphene photodetectors with a nonvolatile p-i-n homojunction. [PDF]

Light Sci Appl
Graphene’s unique photothermoelectric (PTE) effect, combined with its compatibility for on-chip fabrication, promises its development in chip-integrated photodetectors with ultralow dark-current and ultrafast speed.
Tian R, Zhang Y, Ji Y, Li C, Wu X, Wang J, Jia S, Liu L, Zhang M, Zhang Y, Zhang Q, Xie Z, Luo Z, Gao D, Liu Y, Zhao J, Sun Z, Gan X.   +17 more
europepmc   +2 more sources

An 8kb RRAM-Based Nonvolatile SRAM with Pre-Decoding and Fast Storage/Restoration Time

Applied Sciences, 2022
Combining the advantages of low-power consumption of static random access memory (SRAM) with high stability and nonvolatile of resistive memory (RRAM), an improved 8T2R nonvolatile SRAM (nvSRAM) memory cell was proposed in this paper.
Jiayu Yin, Wenli Liao, Yuyan Zhang, Jianhua Jiang, Chengying Chen   +4 more
doaj   +1 more source

Spin and charge drift-diffusion in ultra-scaled MRAM cells

Scientific Reports, 2022
Designing advanced single-digit shape-anisotropy MRAM cells requires an accurate evaluation of spin currents and torques in magnetic tunnel junctions (MTJs) with elongated free and reference layers.
Simone Fiorentini, Mario Bendra, Johannes Ender, Roberto L. de Orio, Wolfgang Goes, Siegfried Selberherr, Viktor Sverdlov   +6 more
doaj   +1 more source

Emerging CMOS Compatible Magnetic Memories and Logic

IEEE Journal of the Electron Devices Society, 2021
As scaling of the feature size - the main driving force behind an outstanding increase of the performance of modern electronic circuits - displays signs of saturation, the main focus of engineering research in microelectronics shifts towards finding new ...
Johannes Ender, Simone Fiorentini, Roberto L. De Orio, Wolfgang Goes, Viktor Sverdlov, Siegfried Selberherr   +5 more
doaj   +1 more source

Numerical Analysis of Deterministic Switching of a Perpendicularly Magnetized Spin-Orbit Torque Memory Cell

IEEE Journal of the Electron Devices Society, 2021
We propose a magnetic field-free spin-orbit torque switching scheme based on two orthogonal current pulses, for which deterministic switching is demonstrated via numerical simulations.
R. L. de Orio, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov   +5 more
doaj   +1 more source

Finite Element Approach for the Simulation of Modern MRAM Devices

Micromachines, 2023
Because of their nonvolatile nature and simple structure, the interest in MRAM devices has been steadily growing in recent years. Reliable simulation tools, capable of handling complex geometries composed of multiple materials, provide valuable help in ...
Simone Fiorentini, Nils Petter Jørstad, Johannes Ender, Roberto Lacerda de Orio, Siegfried Selberherr, Mario Bendra, Wolfgang Goes, Viktor Sverdlov   +7 more
doaj   +1 more source