Results 11 to 20 of about 23,546 (257)

Nonvolatile Resistive Switching in Layered InSe via Electrochemical Cation Diffusion

Advanced Electronic Materials, 2022
2D materials are increasingly being investigated for their nonvolatile switching properties as a step toward downscaling of core electronic elements. Here, the interplay between electrochemically active silver (Ag) cations and layered indium selenide ...
Aishani Mazumder, Taimur Ahmed, Edwin Mayes, Sherif Abdulkader Tawfik, Salvy P. Russo, Mei Xian Low, Abhishek Ranjan, Sivacarendran Balendhran, Sumeet Walia   +8 more
doaj   +2 more sources

Possibility of concentration of nonvolatile species near the surface of comet 67P/Churyumov-Gerasimenko [PDF]

, 2021
Context. Cometary materials are thought to be the reservoir of the primitive materials of the Solar System. The recent detection of glycine and CH3NH2 by the ROSINA mass spectrometer in the coma of 67P/Churyumov-Gerasimenko suggests that amino acids and ...
L. Majumdar, Shinnaka, Y., T. Shibata, Minamoto, H., Majumdar, L., Nomura, H., Y. Shibaike, Y. Shinnaka, H. Nomura, Shibata, T., Shibaike, Y., Suzuki, T., H. Minamoto, T. Suzuki   +13 more
core   +1 more source

Analysis of Switching Under Fixed Voltage and Fixed Current in Perpendicular STT-MRAM

IEEE Journal of the Electron Devices Society, 2020
In spin-transfer torque magnetoresistive random access memory, the magnetization dynamics of a free layer is usually assumed to be determined by the torque created via a position-independent current density.
S. Fiorentini, R. L. de Orio, S. Selberherr, J. Ender, W. Goes, V. Sverdlov   +5 more
doaj   +1 more source

Tunable Resistive Switching Behaviors and Mechanism of the W/ZnO/ITO Memory Cell

Molecules, 2023
A facile sol–gel spin coating method has been proposed for the synthesis of spin-coated ZnO nanofilms on ITO substrates. The as-prepared ZnO-nanofilm-based W/ZnO/ITO memory cell showed forming-free and tunable nonvolatile multilevel resistive switching ...
Zhiqiang Yu, Jinhao Jia, Xinru Qu, Qingcheng Wang, Wenbo Kang, Baosheng Liu, Qingquan Xiao, Tinghong Gao, Quan Xie   +8 more
doaj   +1 more source

Different Withering Times Affect Sensory Qualities, Chemical Components, and Nutritional Characteristics of Black Tea

Foods, 2021
The present study emphasizes the effect of withering time set at 4 ± 0.5 h (WT4), 6 ± 0.5 h (WT6), 8 ± 0.5 h (WT8), 10 ± 0.5 h (WT10), and 12 ± 0.5 h (WT12) on the sensory qualities, chemical components, and nutritional characteristics of black tea.
Bernard Ntezimana, Yuchuan Li, Chang He, Xinlei Yu, Jingtao Zhou, Yuqiong Chen, Zhi Yu, Dejiang Ni   +7 more
doaj   +1 more source

Optimization of a Spin-Orbit Torque Switching Scheme Based on Micromagnetic Simulations and Reinforcement Learning

Micromachines, 2021
Spin-orbit torque memory is a suitable candidate for next generation nonvolatile magnetoresistive random access memory. It combines high-speed operation with excellent endurance, being particularly promising for application in caches. In this work, a two-
Roberto L. de Orio, Johannes Ender, Simone Fiorentini, Wolfgang Goes, Siegfried Selberherr, Viktor Sverdlov   +5 more
doaj   +1 more source

The Effect of Nitrogen Annealing on the Resistive Switching Characteristics of the W/TiO₂/FTO Memory Device

Sensors, 2023
In this paper, the effect of nitrogen annealing on the resistive switching characteristics of the rutile TiO2 nanowire-based W/TiO2/FTO memory device is analyzed.
Zhiqiang Yu, Xu Han, Jiamin Xu, Cheng Chen, Xinru Qu, Baosheng Liu, Zijun Sun, Tangyou Sun   +7 more
doaj   +1 more source

Area-Scalable 10⁹-Cycle-High-Endurance FeFET of Strontium Bismuth Tantalate Using a Dummy-Gate Process

Nanomaterials, 2021
Strontium bismuth tantalate (SBT) ferroelectric-gate field-effect transistors (FeFETs) with channel lengths of 85 nm were fabricated by a replacement-gate process.
Mitsue Takahashi, Shigeki Sakai
doaj   +1 more source

Bipolar Switching Properties of the Transparent Indium Tin Oxide Thin Film Resistance Random Access Memories

Nanomaterials, 2023
In this study, the bipolar switching properties and electrical conduction behaviors of the ITO thin films RRAM devices were investigated. For the transparent RRAM devices structure, indium tin oxide thin films were deposited by using the RF magnetron ...
Kai-Huang Chen, Chien-Min Cheng, Mei-Li Chen, Yi-Yun Pan   +3 more
doaj   +1 more source

Nonvolatile Magneto-Thermal Switching in MgB2 [PDF]

, 2023
Ongoing research explores thermal switching materials to control heat flow. Specifically, there has been interest in magneto-thermal switching (MTS) materials based on superconductors, which only exhibited switching behavior when a magnetic field was ...
Mizuguchi, Yoshikazu, Arima, Hiroto
core   +1 more source