Results 11 to 20 of about 24,540 (306)

Nonvolatile Resistive Switching in Layered InSe via Electrochemical Cation Diffusion

Advanced Electronic Materials, 2022
2D materials are increasingly being investigated for their nonvolatile switching properties as a step toward downscaling of core electronic elements. Here, the interplay between electrochemically active silver (Ag) cations and layered indium selenide ...
Aishani Mazumder, Taimur Ahmed, Edwin Mayes, Sherif Abdulkader Tawfik, Salvy P. Russo, Mei Xian Low, Abhishek Ranjan, Sivacarendran Balendhran, Sumeet Walia   +8 more
doaj   +2 more sources

A Nonvolatile Phase‐Change Metamaterial Color Display [PDF]

, 2019
This is the final version. Available from Wiley via the DOI in this record.Chalcogenide phase-change materials, which exhibit a marked difference in their electrical and optical properties when in their amorphous and crystalline phases and can be ...
Peiman Hosseini, Gerardo Rodriguez‐Hernandez, Harish Bhaskaran, Santiago García‐Cuevas Carrillo, V. Karthik Nagareddy, Yat‐Yin Au, Carlos Ríos, C. David Wright, Liam Trimby   +8 more
core   +7 more sources

Possibility of concentration of nonvolatile species near the surface of comet 67P/Churyumov-Gerasimenko [PDF]

, 2021
Context. Cometary materials are thought to be the reservoir of the primitive materials of the Solar System. The recent detection of glycine and CH3NH2 by the ROSINA mass spectrometer in the coma of 67P/Churyumov-Gerasimenko suggests that amino acids and ...
L. Majumdar, Shinnaka, Y., T. Shibata, Minamoto, H., Majumdar, L., Nomura, H., Y. Shibaike, Y. Shinnaka, H. Nomura, Shibata, T., Shibaike, Y., Suzuki, T., H. Minamoto, T. Suzuki   +13 more
core   +1 more source

Analysis of Switching Under Fixed Voltage and Fixed Current in Perpendicular STT-MRAM

IEEE Journal of the Electron Devices Society, 2020
In spin-transfer torque magnetoresistive random access memory, the magnetization dynamics of a free layer is usually assumed to be determined by the torque created via a position-independent current density.
S. Fiorentini, R. L. de Orio, S. Selberherr, J. Ender, W. Goes, V. Sverdlov   +5 more
doaj   +1 more source

Different Withering Times Affect Sensory Qualities, Chemical Components, and Nutritional Characteristics of Black Tea

Foods, 2021
The present study emphasizes the effect of withering time set at 4 ± 0.5 h (WT4), 6 ± 0.5 h (WT6), 8 ± 0.5 h (WT8), 10 ± 0.5 h (WT10), and 12 ± 0.5 h (WT12) on the sensory qualities, chemical components, and nutritional characteristics of black tea.
Bernard Ntezimana, Yuchuan Li, Chang He, Xinlei Yu, Jingtao Zhou, Yuqiong Chen, Zhi Yu, Dejiang Ni   +7 more
doaj   +1 more source

Coexisting Volatile and Nonvolatile Switching in 3D ALD-IGZO Vertical RRAM for Fully Hardware-Based Wide Reservoir Computing. [PDF]

Adv Sci (Weinh)
A conformal ALD‐IGZO vertical RRAM integrates volatile and nonvolatile switching within a compact 2F architecture. Before forming, tunable volatile dynamics provide fading‐memory reservoir states, while after forming, stable multilevel conductance modulation enables hardware readout.
Lee S, Park J, Kim N, Ju S, Jang SC, Kim HS, Kim S.   +6 more
europepmc   +2 more sources

Optimization of a Spin-Orbit Torque Switching Scheme Based on Micromagnetic Simulations and Reinforcement Learning

Micromachines, 2021
Spin-orbit torque memory is a suitable candidate for next generation nonvolatile magnetoresistive random access memory. It combines high-speed operation with excellent endurance, being particularly promising for application in caches. In this work, a two-
Roberto L. de Orio, Johannes Ender, Simone Fiorentini, Wolfgang Goes, Siegfried Selberherr, Viktor Sverdlov   +5 more
doaj   +1 more source

A Comprehensive Study of Temperature and Its Effects in SOT-MRAM Devices

Micromachines, 2023
We employ a fully three-dimensional model coupling magnetization, charge, spin, and temperature dynamics to study temperature effects in spin-orbit torque (SOT) magnetoresistive random access memory (MRAM).
Tomáš Hadámek, Nils Petter Jørstad, Roberto Lacerda de Orio, Wolfgang Goes, Siegfried Selberherr, Viktor Sverdlov   +5 more
doaj   +1 more source

The Effect of Nitrogen Annealing on the Resistive Switching Characteristics of the W/TiO₂/FTO Memory Device

Sensors, 2023
In this paper, the effect of nitrogen annealing on the resistive switching characteristics of the rutile TiO2 nanowire-based W/TiO2/FTO memory device is analyzed.
Zhiqiang Yu, Xu Han, Jiamin Xu, Cheng Chen, Xinru Qu, Baosheng Liu, Zijun Sun, Tangyou Sun   +7 more
doaj   +1 more source

Area-Scalable 10⁹-Cycle-High-Endurance FeFET of Strontium Bismuth Tantalate Using a Dummy-Gate Process

Nanomaterials, 2021
Strontium bismuth tantalate (SBT) ferroelectric-gate field-effect transistors (FeFETs) with channel lengths of 85 nm were fabricated by a replacement-gate process.
Mitsue Takahashi, Shigeki Sakai
doaj   +1 more source