Results 41 to 50 of about 11,230 (168)

Facile Hydrothermal Synthesis and Resistive Switching Mechanism of the α-Fe₂O₃ Memristor

Molecules
Among the transition metal oxides, hematite (α-Fe2O3) has been widely used in the preparation of memristors because of its excellent physical and chemical properties.
Zhiqiang Yu, Qingcheng Wang, Jinhao Jia, Wenbo Kang, Meilian Ou, Zhimou Xu   +5 more
doaj   +1 more source

Editorial for the Topic on Magnetic Materials and Devices

Micromachines
Magnets are materials that are characterized by their own persistent magnetic moments [...]
Viktor Sverdlov
doaj   +1 more source

Experimental Demonstration of a Nonvolatile SRAM With Ferroelectric HfO₂ Capacitor for Normally Off Application

IEEE Journal of the Electron Devices Society, 2018
In order to realize ultralow power Internet-of-Things (IoT) edge devices, standby leakage current must be suppressed because activity of IoT device is very small in an intermittent mode.
Masaharu Kobayashi, Nozomu Ueyama, Kyungmin Jang, Toshiro Hiramoto   +3 more
doaj   +1 more source

Volatile and Nonvolatile Dual‐Mode Switching Operations in an Ag‐Ag2S Core‐Shell Nanoparticle Atomic Switch Network

Advanced Electronic Materials
This paper proposes a nanoparticle‐based atomic switch network memristive device, capable of both volatile and nonvolatile switching operations, which have not been previously reported for this material.
Oradee Srikimkaew, Saverio Ricci, Matteo Porzani, Thien Tan Dang, Yusuke Nakaoka, Yuki Usami, Daniele Ielmini, Hirofumi Tanaka   +7 more
doaj   +1 more source

Memristor-Based Nonvolatile Random Access Memory: Hybrid Architecture for Low Power Compact Memory Design

IEEE Access, 2013
In this paper, a new approach toward the design of a memristor based nonvolatile static random-access memory (SRAM) cell using a combination of memristor and metal-oxide semiconductor devices is proposed. Memristor and MOSFETs of the Taiwan Semiconductor
Syed Shakib Sarwar, Syed An Nazmus Saqueb, Farhan Quaiyum, A. B. M. Harun-Ur Rashid   +3 more
doaj   +1 more source

Nonvolatile memories

, 2018
The need for faster, smaller, cheaper and energy-efficient electronic devices has been growing continuously in the last decade, with the conventional data storage technologies (i.e., static random access memory and dynamic random access memory), which have been so far fulfilled by CMOS-charge storage-based circuits, approaching their fundamental limits,
Rocha, Leandro S.R., Simões, Alexandre Z., Cortés, Johan A., Ramirez, Miguel A., Moura, Francisco, Foschini, Cesar R., Tararam, Ronald, Cilense, Mario, Longo, Elson, Paiva-Santos, Carlos O.   +9 more
openaire   +2 more sources

Advanced Modeling and Simulation of Multilayer Spin–Transfer Torque Magnetoresistive Random Access Memory with Interface Exchange Coupling

Micromachines
In advancing the study of magnetization dynamics in STT-MRAM devices, we employ the spin drift–diffusion model to address the back-hopping effect. This issue manifests as unwanted switching either in the composite free layer or in the reference layer in ...
Mario Bendra, Roberto Lacerda de Orio, Siegfried Selberherr, Wolfgang Goes, Viktor Sverdlov   +4 more
doaj   +1 more source

Design of an Intermittent-Computing-Oriented Nonvolatile Register With a Switching-Probability-Aware Store-and-Verify Scheme

IEEE Access
This paper describes the configuration of a magnetic tunnel junction (MTJ)-based nonvolatile register designed for the greedy utilization of supplied energy in intermittent computing.
Masanori Natsui, Takahiro Hanyu
doaj   +1 more source

Nonvolatile magneto-thermal switching driven by vortex trapping in commercial In-Sn solder

Applied Physics Express
Magneto-thermal switching (MTS) is a key technology for efficient thermal management. Recently, large MTS with nonvolatility has been observed in Sn-Pb solders [H. Arima et al. Commun. Mater.
Poonam Rani, Takumi Murakami, Yuto Watanabe, Hossein Sepehri-Amin, Hiroto Arima, Aichi Yamashita, Yoshikazu Mizuguchi   +6 more
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High‐Performance Nonvolatile Organic Field‐Effect Transistor Memory Based on Organic Semiconductor Heterostructures of Pentacene/P13/Pentacene as Both Charge Transport and Trapping Layers

Advanced Science, 2017
Nonvolatile organic field‐effect transistor (OFET) memory devices based on pentacene/N,N′‐ditridecylperylene‐3,4,9,10‐tetracarboxylic diimide (P13)/pentacene trilayer organic heterostructures have been proposed. The discontinuous n‐type P13 embedded in p‐
Wen Li, Fengning Guo, Haifeng Ling, Peng Zhang, Mingdong Yi, Laiyuan Wang, Dequn Wu, Linghai Xie, Wei Huang   +8 more
doaj   +1 more source