Results 41 to 50 of about 23,546 (257)

All-nanocellulose nonvolatile resistive memory [PDF]

Celano, U., Nagashima, K., Koga, H. et al. All-nanocellulose nonvolatile resistive memory. NPG Asia Mater 8, e310 (2016). https://doi.org/10.1038/am.2016.144.Single-use disposable nonvolatile memory devices hold promise for novel applications in internet
Koga, Hirotaka, Nogi, Masaya, Jurczak, Malgorzata, Vandervorst, Wilfried, Nagashima, Kazuki, Zhuge, Fuwei, Celano, Umberto, Meng, Gang, He, Yong, Boeck, Jo De, Yanagida, Takeshi   +10 more
core   +1 more source

Nanoarchitectonics for Non‐Volatile Ternary STDP Synapse Using Anti‐Ferroelectric Carbon Nanotube Devices

Advanced Electronic Materials
Anti‐ferroelectrics (AFEs) offer unique properties such as double hysteresis window, high endurance, and low latency, making them appealing for neuromorphic computing architectures.
Mohammad Khaleqi Qaleh Jooq, Fereshteh Behbahani, Amirali Amirsoleimani, Mostafa Rahimi Azghadi, Saeed Afshar   +4 more
doaj   +1 more source

Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor

Advanced Functional Materials, EarlyView.
Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben, Nicolas Gauquelin, Arno Annys, Zhaoliang Liao, Jo Verbeeck, Guus Rijnders, Gertjan Koster   +6 more
wiley   +1 more source

Design considerations of a nonvolatile accumulator-based 8-bit processor [PDF]

, 2021
The rise of the Internet of Things (IoT) and theconstant growth of portable electronics have leveraged the con-cern with energy consumption. Nonvolatile memory (NVM)emerged as a solution to mitigate the problem due to its abilityto retain data on sleep ...
Cagliari, Bruna Casagranda, Butzen, Paulo Francisco, Brum, Raphael Martins   +2 more
core   +1 more source

Bio‐Derived Polyelectrolyte Additive–Induced Interfacial Ion‐Diffusion Barriers for Nonvolatile Organic Artificial Synapses

Advanced Functional Materials, EarlyView.
Sodium alginate regulates interfacial ion transport and retention in electrolyte‐gated synaptic transistors. The carboxylate‐rich polymeric network forms a dynamic interfacial ion‐diffusion barrier that facilitates ion injection during programming while suppressing ion back‐diffusion, thereby stabilizing the electrochemically doped channel state.
Chaeyeon Han, Donghwa Lee, Hyeonse Kim, Hyoik Jang, Sein Chung, Geun Yeol Bae, Eunho Lee   +6 more
wiley   +1 more source

2K nonvolatile shadow RAM and 265K EEPROM SONOS nonvolatile memory development [PDF]

, 1998
This paper describes Silicon Oxide Nitride Oxide Semiconductor (SONOS) nonvolatile memory development at Sandia National Laboratories. A 256K EEPROM nonvolatile memory and a 2K nonvolatile shadow RAM are under development using an n-channel SONOS memory ...
Habermehl, S. D., Mahl, P. R., Murray, J. R., Knoll, M. G., Rodriguez, J. L., Bennett, R. S., Tafoya-Porras, B. C., Jones, R. V., Nasby, R. D.   +8 more
core  

Noise‐Limited Bit Precision in Ferroelectric Synaptic Transistors for High‐Resolution Neuromorphic Computing

Advanced Functional Materials, EarlyView.
Low‐frequency noise spectroscopy defines the resolvable conductance states of synaptic FeFETs by coupling read‐current fluctuation with usable dynamic range. The resulting noise‐limited bit precision establishes a universal, device‐agnostic reliability metric beyond the memory window, enabling quantitative benchmarking and rational design of high ...
Jaehong Park, Yeonseop Shin, Changhyeon Han, Sangwoo Kim, Eunchan Park, Youngchan Cho, Jaehong Min, Hyunjun Ahn, Jaekyoung Park, Cheol‐Woong Yang, Jangsaeng Kim, Daewoong Kwon, Wonjun Shin   +12 more
wiley   +1 more source

Sliding Ferroelectricity Driven Spin-Layertronics in Altermagnetic Multilayers. [PDF]

Adv Sci (Weinh)
Integrating sliding ferroelectricity with altermagnetism enables nonvolatile electrical control of spin and layer degrees of freedom. In bilayer CuF2, interlayer translation reverses layer‐locked spin‐split bands, establishing a multifunctional “spin‐layertronic” platform.
Peng R, Su G, Fan Y, Li J, Liu F, Ang YS.   +5 more
europepmc   +2 more sources

Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing

Advanced Functional Materials, EarlyView.
A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin, Eunjoo Yoo, Ki‐Hoon Son, Hyun‐Sik Kim, Dae‐Hee Han, Jeong Hyeon Son, Seung Hwan Lee, Hong‐Sub Lee   +7 more
wiley   +1 more source

Contribution of Nonvolatile Composition to Wine Flavor

, 2012
This review is aimed at giving an overview of the current state of knowledge of nonvolatile molecules with sensory activity in wine. For this purpose, nonvolatile molecules with known sensory properties are reported and their ability to impact or alter ...
María-Pilar Sáenz-Navajas, Vicente Ferreira, Purificación Fernández-Zurbano, Ferreira, Vicente, Fernández-Zurbano, Purificación, Sáenz-Navajas, María-Pilar   +5 more
core   +1 more source