Results 41 to 50 of about 24,540 (306)

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Modeling spin-orbit torque driven magnetization dynamics in emerging magnetoresistive devices: a finite element method approach

npj Spintronics
We present a versatile three-dimensional finite element simulation framework that couples a charge and spin drift-diffusion formalism, extended to include interfacial spin-orbit coupling, with the Landau-Lifshitz-Gilbert equation.
Nils Petter Jørstad, Wolfgang Goes, Siegfried Selberherr, Viktor Sverdlov   +3 more
doaj   +1 more source

Editorial for the Special Issue on Magnetic and Spin Devices

Micromachines, 2022
As scaling of semiconductor devices displays signs of saturation, the focus of research in microelectronics shifts towards finding new computing paradigms based on novel physical principles [...]
Viktor Sverdlov, Nuttachai Jutong
doaj   +1 more source

Boosting Ferroelectricity: 2D and Polymer Ferroelectric Hybrids Enabling Ambipolar Nonvolatile MoS₂ Memory Transistor. [PDF]

Adv Sci (Weinh)
Two‐dimensional CuInP2S6 nanosheets are incorporated into a P(VDF‐TrFE) matrix to induce polarization‐cooperative ferroelectric coupling. The resulting P(VDF‐TrFE)/CuInP2S6 hybrid film exhibits reinforced ferroelectric ordering and reduced coercive electric fields compared with pristine P(VDF‐TrFE).
Jeong Y, Wang H, Tordi P, Hu YC, Tamayo A, Wu B, Ahn HS, Sofer Z, Jung JH, Bonini M, Samorì P.   +10 more
europepmc   +2 more sources

Imprint Control of Nonvolatile Shape Memory with Asymmetric Ferroelectric Multilayers

, 2016
Imprint Control of Nonvolatile Shape Memory with Asymmetric Ferroelectric ...
Young-Han Shin (1700146), Jong Yeog Son (1700149), Woo-Hee Kim (1700152), Hyun Myung Jang (1487470)   +3 more
core   +1 more source

Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing

Advanced Functional Materials, EarlyView.
A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin, Eunjoo Yoo, Ki‐Hoon Son, Hyun‐Sik Kim, Dae‐Hee Han, Jeong Hyeon Son, Seung Hwan Lee, Hong‐Sub Lee   +7 more
wiley   +1 more source

Ten States of Nonvolatile Memory through Engineering Ferromagnetic Remanent Magnetization

, 2019
Ten States of Nonvolatile Memory through Engineering Ferromagnetic Remanent ...
Zhao, Yuelei, Zhang, Xixiang, Yan, Shishen, Tian, Yufeng, Zhang, Qiang, Bai, Lihui, Cai, Jianwang, Chen, Yanxue, Kang, Shishou, Zhong, Hai, Huang, Qikun, Wen, Yan, Li, Run-Wei   +12 more
core   +1 more source

Emerging Post‐CMOS Hardware Neurons for Brain‐Inspired Computing: Devices, Circuits, and System Integration

Advanced Functional Materials, EarlyView.
The physical realization of artificial neurons is a critical challenge for energy‐efficient neuromorphic computing. This review presents a comprehensive analysis of the evolution of artificial neuron implementations from conventional CMOS to emerging post‐CMOS technologies.
Kannan Udaya Mohanan, Hocheon Yoo, Benoît H. Lessard, Ioannis Kymissis, Chang‐Hyun Kim   +4 more
wiley   +1 more source

Nanoarchitectonics for Non‐Volatile Ternary STDP Synapse Using Anti‐Ferroelectric Carbon Nanotube Devices

Advanced Electronic Materials
Anti‐ferroelectrics (AFEs) offer unique properties such as double hysteresis window, high endurance, and low latency, making them appealing for neuromorphic computing architectures.
Mohammad Khaleqi Qaleh Jooq, Fereshteh Behbahani, Amirali Amirsoleimani, Mostafa Rahimi Azghadi, Saeed Afshar   +4 more
doaj   +1 more source

Nonvolatile storage in photorefractive crystals [PDF]

Optics Letters, 1994
We propose and demonstrate a nonvolatile holographic recording system for storing two-dimensional images. The readout light in this system is not absorbed by the holographic medium, and the data are preformatted or postformatted so that lines from different holograms are interleaved to satisfy the Bragg-matching condition.
MOK, F., LI, H.Y.S., PSALTIS, D.
openaire   +3 more sources