Results 51 to 60 of about 20,887 (309)

Nonvolatile memories

, 2018
The need for faster, smaller, cheaper and energy-efficient electronic devices has been growing continuously in the last decade, with the conventional data storage technologies (i.e., static random access memory and dynamic random access memory), which have been so far fulfilled by CMOS-charge storage-based circuits, approaching their fundamental limits,
Rocha, Leandro S.R., Simões, Alexandre Z., Cortés, Johan A., Ramirez, Miguel A., Moura, Francisco, Foschini, Cesar R., Tararam, Ronald, Cilense, Mario, Longo, Elson, Paiva-Santos, Carlos O.   +9 more
openaire   +2 more sources

A New 8T Hybrid Nonvolatile SRAM With Ferroelectric FET

IEEE Journal of the Electron Devices Society, 2020
This paper proposes a new 8T nonvolatile SRAM (nvSRAM) cell employing ULP FinFETs and ferroelectric FinFETs to enable energy-efficient and low-latency store/recall operations.
Wei-Xiang You, Pin Su, Chenming Hu
doaj   +1 more source

Ambient energy harvesting nonvolatile processors

, 2015
Energy harvesting is gaining more and more attentions due to its characteristics of ultra-long operation time without maintenance. However, frequent unpredictable power failures from energy harvesters bring performance and reliability challenges to ...
Hehe Li, Zewei Li, Xueqing Li, Li, Zewei, Huazhong Yang, John, Sampson, Sampson John, Xie, Yuan, Li, Hehe, Jiwu Shu, Shu, Jiwu, Yiqun Wang, Wang, Yiqun, Liu, Yongpan, Li, Xueqing, Ma, Kaisheng, Kaisheng Ma, Shuangchen Li, Meng-Fan Chang, Yuan Xie, Yang, Huazhong, Yongpan Liu, Li, Shuangchen, Chang, Meng Fan   +23 more
core   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Spin currents and torques in ferromagnetic systems with strong interfacial spin-orbit coupling

Scientific Reports
A three-dimensional description of spin-dependent current transport across nonmagnetic/ferromagnetic interfaces with strong interfacial spin-orbit coupling is presented.
Nils Petter Jørstad, Bernhard Pruckner, Wolfgang Goes, Siegfried Selberherr, Viktor Sverdlov   +4 more
doaj   +1 more source

A multilevel nonvolatile magnetoelectric memory

Scientific Reports, 2016
AbstractThe coexistence and coupling between magnetization and electric polarization in multiferroic materials provide extra degrees of freedom for creating next-generation memory devices. A variety of concepts of multiferroic or magnetoelectric memories have been proposed and explored in the past decade.
Jianxin Shen, Junzhuang Cong, Dashan Shang, Yisheng Chai, Shipeng Shen, Kun Zhai, Young Sun   +6 more
openaire   +2 more sources

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Editorial for the Special Issue on Magnetic and Spin Devices

Micromachines, 2022
As scaling of semiconductor devices displays signs of saturation, the focus of research in microelectronics shifts towards finding new computing paradigms based on novel physical principles [...]
Viktor Sverdlov, Nuttachai Jutong
doaj   +1 more source

All-nanocellulose nonvolatile resistive memory [PDF]

Celano, U., Nagashima, K., Koga, H. et al. All-nanocellulose nonvolatile resistive memory. NPG Asia Mater 8, e310 (2016). https://doi.org/10.1038/am.2016.144.Single-use disposable nonvolatile memory devices hold promise for novel applications in internet
Koga, Hirotaka, Nogi, Masaya, Jurczak, Malgorzata, Vandervorst, Wilfried, Nagashima, Kazuki, Zhuge, Fuwei, Celano, Umberto, Meng, Gang, He, Yong, Boeck, Jo De, Yanagida, Takeshi   +10 more
core   +1 more source

Emergent Topological Magnons and Thermal Hall Effect in 2D Filling‐Enforced Fully Compensated Ferrimagnets

Advanced Functional Materials, EarlyView.
Schematic illustration of ferroelectric‐intercalation‐driven transitions in magnetic configurations and magnonic topological phases, together with the symmetry relations of magnonic Berry curvature. ABSTRACT Magnons in collinear magnets with vanishing net magnetization offer unique advantages for spin transport, including ultrafast dynamics and ...
Yingxi Bai, Bo Yuan, Zhenzhou Guo, Jian Zhang, Ying Dai, Baibiao Huang, Xiaotian Wang, Chengwang Niu, Gang Zhang   +8 more
wiley   +1 more source