Results 51 to 60 of about 24,540 (306)

2K nonvolatile shadow RAM and 265K EEPROM SONOS nonvolatile memory development [PDF]

, 1998
This paper describes Silicon Oxide Nitride Oxide Semiconductor (SONOS) nonvolatile memory development at Sandia National Laboratories. A 256K EEPROM nonvolatile memory and a 2K nonvolatile shadow RAM are under development using an n-channel SONOS memory ...
Habermehl, S. D., Mahl, P. R., Murray, J. R., Knoll, M. G., Rodriguez, J. L., Bennett, R. S., Tafoya-Porras, B. C., Jones, R. V., Nasby, R. D.   +8 more
core  

Cellulose nanofiber paper as an ultra flexible nonvolatile memory [PDF]

Nagashima, K., Koga, H., Celano, U. et al. Cellulose Nanofiber Paper as an Ultra Flexible Nonvolatile Memory. Sci Rep 4, 5532 (2014). https://doi.org/10.1038/srep05532.On the development of flexible electronics, a highly flexible nonvolatile memory ...
Koga, Hirotaka, Jurczak, Malgorzata, Celano, Umberto, Meng, Gang, Rahong, Sakon, He, Yong, Yanagida, Takeshi, Nogi, Masaya, Vandervorst, Wilfried, Nagashima, Kazuki, Zhuge, Fuwei, Kanai, Masaki, Kitaoka, Takuya, Boeck, Jo De   +13 more
core   +1 more source

Reservoir‐Driven Neuromorphic Computing Based on Composite Rare‐Earth/Transition Metal Oxide Memristor

Advanced Functional Materials, EarlyView.
A defect‐engineered Ag/Gd2O3:Nb2O5/Pt rare earth composite oxide memristor enables stable multilevel reservoir states through pulse driven conductance modulation. Experimentally measured device responses are incorporated into a device aware reservoir computing framework for CIFAR‐100 image classification, highlighting the potential of rare earth ...
Hammad Ghazanfar, Haider Abbas, Muhammad Rabeel, Honggyun Kim, Ghulam Dastgeer, Muhammad Nasim, Furqan Zahoor, Yawar Abbas, Waqas Ahmad, Deok‐kee Kim   +9 more
wiley   +1 more source

Preferential Interfacial Engineering of Hydrogels via Interdigitated Nanoparticle Assembly

Advanced Functional Materials, EarlyView.
Robust surface functionalization of hydrogel surfaces is performed via interdigitated metal nanoparticle assembly, inducing strong affinity with the hydrogel matrix. The partially exposed nanoparticle domains act as interfacial nanobridges that mediate both chemical and physical bonding with diverse materials, including small molecules, fluorous ...
Hyeonjin Kim, Hyeseoung Lim, Ji Min Lee, Heeyeon Kang, Yongkwon Song, Woojae Chang, So‐Jin Park, Jin Yoo, Atsushi Hozumi, Jinhan Cho, Jongkuk Ko, Sanghyuk Wooh   +11 more
wiley   +1 more source

Anodic Nb2O5 Nonvolatile RRAM

, 2012
We report nonvolatile resistive switching in anodic niobium pentoxide thin-film memory cells. Highly dielectric Nb2O5 films were prepared at room temperature by the anodic oxidation of submicrometer-thick Nb films sputtered onto an Si wafer.
Grishin, Alexander M.,, Velichko, A. A., Kundozerova, Tatyana V.,, Stefanovich, G. B.   +3 more
core   +1 more source

Widely Targeted Metabolomics Analysis Reveals the Differences of Nonvolatile Compounds in Oolong Tea in Different Production Areas

Foods, 2022
The flavor differences in Oolong tea from different producing areas are caused by its complex differential compounds. In this study, representative samples of Oolong tea from four countries were collected, and their differential nonvolatile compounds ...
Zhihui Wang, Shuang Gan, Weijiang Sun, Zhidan Chen   +3 more
doaj   +1 more source

Electrically Induced Phase Transition and Synaptic Functionality in MoTe2/Graphene Memristors

Advanced Functional Materials, EarlyView.
An electrically induced reversible 2H ↔ 1T′ phase transition is demonstrated in a vertical Au/Ti/MoTe2/graphene memristor with a laterally contacted graphene electrode. Resistive switching proceeds through a compositionally invariant amorphous/2H ↔ amorphous/1T′ transformation, in which a self‐formed amorphous MoTe2 interfacial region is proposed to ...
Chien‐Hua Wang, Mu‐Pai Lee, Jhen‐Dong Tsai, Liang‐Ying Hsieh, Jui‐Yuan Chen, Chun‐Wei Huang, Yen‐Fu Lin, Wen‐Wei Wu   +7 more
wiley   +1 more source

Nitrospinics: Nitride Materials for Spin‐Orbit and Orbital Torques From Memory to Artificial Intelligence

Advanced Functional Materials, EarlyView.
Further advances in applications can be anticipated through the development of unique and functional materials beyond conventional alloys. Nitrogen enables tailor‐made orbital textures in various transition‐metal hosts, paving the way for devices ranging from spintronics memory to artificial intelligence hardware.
Prabhat Kumar, Gaurav Kumar Shukla, Yoshio Miura, Shinji Isogami   +3 more
wiley   +1 more source

GeS as an Emerging OTS Material: Atomic Structure and Modeling of ON/OFF Switching

Advanced Functional Materials, EarlyView.
The structural puzzle of glassy GeS, an advanced memory‐selector material, has finally been disentangled, revealing a patchwork of mixed tetrahedral and trigonal species. Under a high electric field, over‐ and under‐coordinated Ge and S defects, together with three‐membered rings, form an interconnected network associated with localized and extended ...
Andrey Tverjanovich, Jörg C. Neuefeind, Chris J. Benmore, Daniele Fontanari, Anton Sokolov, Maxim Khomenko, Shinji Kohara, Aleksei Bytchkov, Takeshi Usuki, Maria Bokova, Mohammad Kassem, Pascal Masselin, Mariana Milochova, Eugene Bychkov   +13 more
wiley   +1 more source

A unified buffer cache architecture that subsumes journaling functionality via nonvolatile memory

, 2017
Buffer cache; File system; Journaling; Nonvolatile memory ...
반효경
core   +1 more source