Results 71 to 80 of about 24,540 (306)
III-nitride memristors: materials, devices, and applications
Materials FuturesMemristors, with their compactness, nonvolatile storage, and dynamic resistance modulation, are poised to revolutionize next-generation memory and neuromorphic computing paradigms. III-nitride materials, such as boron nitride (BN), gallium nitride (GaN),
Yang Yang, Haotian Li, Qilin Hua
doaj +1 more source
Advanced Materials, EarlyView.The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj +8 more
wiley +1 more source
Polymer and Organic Nonvolatile Memory Devices
, 2010 Organic molecules and semiconductors have been proposed as active part of a large variety of nonvolatile memory devices, including resistors, diodes and transistors. In this review, we focus on electrically reprogrammable nonvolatile memories.
Muller, Robert +12 more
core +1 more source
Phase Engineering of Nanomaterials (PEN): Evolution, Current Challenges, and Future Opportunities
Advanced Materials, EarlyView.This review summarizes the synthesis, phase transition, advanced characterization spanning ex situ to in situ and operando techniques, and diverse applications of phase engineering of nanomaterials (PEN). It further outlines key challenges and future opportunities, such as phase stability, architecture control, and artificial intelligence (AI)‐driven ...
Ye Chen +7 more
wiley +1 more source
Journal of Materiomics, 2018 We prepared 300-nm GeTe thin films on (111)-oriented and piezoelectrically active 0.71 Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-0.29 PT) single-crystal substrates by the pulsed laser deposition and investigated the effects of in situ electric-field-controllable ...
Zhi-Xue Xu +9 more
doaj +1 more source
, 2018 The need for faster, smaller, cheaper and energy-efficient electronic devices has been growing continuously in the last decade, with the conventional data storage technologies (i.e., static random access memory and dynamic random access memory), which have been so far fulfilled by CMOS-charge storage-based circuits, approaching their fundamental limits,
Rocha, Leandro S.R. +9 more
openaire +2 more sources
Nonvolatile-Memory Characteristics of AlO--Implanted AI2O3
, 2009 The nonvolatile-memory (NVM) characteristics of AIO- -implanted Al2O3structures are reported and shown to exhibit promising behaviors, including fast program/erase speeds and high-temperature data retention.
Robert Elliman (20007516) +5 more
core
Advanced Materials, EarlyView.Intrinsic material dynamics are harnessed as computational resources for neuromorphic in‐materio physical reservoir computing. Defects, ionic motion, interfaces, percolation, geometry, and biasing shape transient states that provide fading memory, nonlinearity, and high‐dimensional projection for simple readout. A descriptor‐to‐dynamics framework links
Kshitij RB Singh +5 more
wiley +1 more source
Nonvolatile Bipolar Resistive Memory Switching in Single Crystalline NiO Heterostructured Nanowires
, 2016 Nonvolatile Bipolar Resistive Memory Switching in Single Crystalline NiO Heterostructured ...
Hidekazu Tanaka (143503) +4 more
core +1 more source
Advanced Materials, EarlyView.Mobile‐atom percolation underlying β‐relaxations fundamentally dictates the crystallization pathways of phase‐change materials. High‐frequency ultrasonic excitation dynamically modulates this critical mobility percolation network, substantially accelerating the crystallization process.
Yu‐Yao Liu +11 more
wiley +1 more source