Results 91 to 100 of about 23,546 (257)

Analog Tensor Processing With Carbon Nanotube In‐Memory Matrix Multiplications for Edge Computer Vision Acceleration

Advanced Materials, EarlyView.
This work prototypes a carbon nanotube‐based analog tensor core that performs in‐memory, parallel visual processing. Integrating non‐volatile memories and compact circuits, the core enables high‐speed analog matrix multiplications and can demonstrate accurate three dimensional (3D) spatial transformation and edge detection. With lightweight design, the
Jingfang Pei, Lekai Song, Songwei Liu, Yingyi Wen, Yaoqiang Zhou, Yang Liu, Pengyu Liu, Wenyu Cui, Xin Lu, Teng Ma, Zegao Wang, Guohua Hu   +11 more
wiley   +1 more source

Memristor-Based Nonvolatile Random Access Memory: Hybrid Architecture for Low Power Compact Memory Design

IEEE Access, 2013
In this paper, a new approach toward the design of a memristor based nonvolatile static random-access memory (SRAM) cell using a combination of memristor and metal-oxide semiconductor devices is proposed. Memristor and MOSFETs of the Taiwan Semiconductor
Syed Shakib Sarwar, Syed An Nazmus Saqueb, Farhan Quaiyum, A. B. M. Harun-Ur Rashid   +3 more
doaj   +1 more source

Hierarchical Flexible Ceramic Nanofiber Membrane for Simultaneous Membrane Distillation and Photocatalytic Hydrogen Evolution

Advanced Materials, EarlyView.
A hierarchical flexible ceramic nanofiber membrane integrates a La‐stabilized ZrO2 scaffold with superhydrophobic UiO‐66‐NH2/CdS heterojunctions. The gas–liquid–solid interfacial architecture sustains vapor‐selective desalination, visible‐light charge separation, and rapid H2 extraction, enabling simultaneous freshwater production and photocatalytic ...
Pengfei Lin, Xiaochen Lu, Jiawei Sun, Shuai Guo, Xinping He, Chunhai Yi, Zhenyao Wang, Jiaxin Guo, Swee Ching Tan, Alicia Kyoungjin An   +9 more
wiley   +1 more source

Hybrid flexible resistive random access memory-gated transistor for novel nonvolatile data storage

, 2016
Here, a single‐device demonstration of novel hybrid architecture is reported to achieve programmable transistor nodes which have analogies to flash memory by incorporating a resistive switching random access memory (RRAM) device as a resistive switch ...
Sun, Qijun, Zhuang, Jiaqing, Han, Su-Ting, Zhou, Li, Zhou, Ye, Zhang, Hua, Yan, Yan, Chen, Bo, Wang, Chundong, Roy, Vellaisamy A.L.   +9 more
core   +1 more source

Advanced Modeling and Simulation of Multilayer Spin–Transfer Torque Magnetoresistive Random Access Memory with Interface Exchange Coupling

Micromachines
In advancing the study of magnetization dynamics in STT-MRAM devices, we employ the spin drift–diffusion model to address the back-hopping effect. This issue manifests as unwanted switching either in the composite free layer or in the reference layer in ...
Mario Bendra, Roberto Lacerda de Orio, Siegfried Selberherr, Wolfgang Goes, Viktor Sverdlov   +4 more
doaj   +1 more source

Atomically Precise Ag11 and Ag12 Nanocluster‐Assembled 2D Materials for Memristive and Neuromorphic Functionality

Advanced Materials, EarlyView.
Two‐dimensional Ag11 and Ag12 cluster‐assembled materials (CAMs) are synthesized, offering atomically precise platforms with tunable electronic properties. The resulting materials exhibit robust memristive switching and neuromorphic response, demonstrating their promise for advanced nanoelectronic and memory applications.
Noohul Alam, Towhidur Rahaman, Céline Besnard, Arnulf Rosspeintner, Latevi Max Lawson Daku, Saood Khan, Soumya Jyoti Ray, Thomas Bürgi   +7 more
wiley   +1 more source

Nonvolatile programmable neural network synaptic array [PDF]

, 1994
A floating-gate metal oxide semiconductor (MOS) transistor is implemented for use as a nonvolatile analog storage element of a synaptic cell used to implement an array of processing synaptic cells.
Tawel, Raoul
core  

Nonvolatile Memories: Present and Future Challenges

, 2014
Due to the rapid development of hand-held electronic devices, the need for high density, low power, high performance SoCs has pushed the well-established embedded memory technologies to their limits.
C. Zambelli, Cristian Zambelli, Aziza, Hassen, Elena Ioana Vatajelu, H. Aziza, ZAMBELLI, Cristian, VATAJELU, ELENA IOANA, Hassen Aziza   +7 more
core   +1 more source

Volatile Memristive Devices With Tunable Temporal Dynamics For Event‐Based Sensing

Advanced Materials, EarlyView.
Tunable volatile memristive devices can serve various neural‐inspired tasks that require different time windows of information retention. The ionic‐based volatility of the presented Pt/a‐STO/TaOx/Ta device stack can be reproducibly and controllably tuned in multiple ways.
Dimitrios Spithouris, Johannes Hellwig, Hugh Greatorex, Clemens Wittberg, Panagiotis Koutsogiannis, César Magén, Elisabetta Chicca, Regina Dittmann   +7 more
wiley   +1 more source

Descriptors to Dynamics: A Materials and Device Perspective on in‐Materio Physical Reservoir Computing for Neuromorphic Edge Intelligence

Advanced Materials, EarlyView.
Intrinsic material dynamics are harnessed as computational resources for neuromorphic in‐materio physical reservoir computing. Defects, ionic motion, interfaces, percolation, geometry, and biasing shape transient states that provide fading memory, nonlinearity, and high‐dimensional projection for simple readout. A descriptor‐to‐dynamics framework links
Kshitij RB Singh, Alif Syafiq Kamarol Zaman, Muzhen Xu, Yuki Usami, Saptarshi Das, Hirofumi Tanaka   +5 more
wiley   +1 more source