Results 111 to 120 of about 20,887 (309)

Nonvolatile memory devices based on self-assembled nanocrystals

, 2018
Nonvolatile memory devices are one of the most important components in modern electronic devices. Many efforts have been made to fabricate high-density, low-cost, nonvolatile solid-state memory devices for use in portable/mobile electronic devices such ...
Lee, JS
core   +1 more source

Polarization‐Enabled Piezoelectric Tellurium–Selenium (TexSe1–x) Thin Films for Memory Switching and Artificial Synaptic Functions

Advanced Science, EarlyView.
Here, we demonstrate and investigate polarization‐enabled electromechanical responses in cryogenic physical vapor deposition (cryogenic PVD)‐deposited TexSe1‐x thin films, a tellurium‐based compound with a tunable bandgap and enhanced non‐centrosymmetry.
Chia‐Chen Chung, Mayur Chaudhary, Chia‐Hung Lo, Po‐Chien Lai, You‐Jie Lin, Ruei‐Hong Cyu, Yu‐Ren Peng, Bing‐Ni Gu, Zhao‐Feng Lou, Quynh Thi Le, Yi‐Jen Yu, Yen‐Fu Lin, Min‐Hung Lee, Ying‐Hao Chu, Chang‐Hong Shen, Der‐Hsien Lien, Yu‐Lun Chueh   +16 more
wiley   +1 more source

Two‐Dimensional Triferroics: From Fundamental Couplings to Multifunctional Applications

Advanced Science, EarlyView.
This graphic summarizes the three main types of currently reported 2D triferroic couplings. From the structural perspective, existing systems can be broadly classified into two categories, which exhibit distinct symmetry features and coupling behaviors. Beyond the lattice difference, a third type involves the interplay among ferroelectricity, magnetism,
Yang Li, Jialin Gong, Zhiqing Li
wiley   +1 more source

Design of an Intermittent-Computing-Oriented Nonvolatile Register With a Switching-Probability-Aware Store-and-Verify Scheme

IEEE Access
This paper describes the configuration of a magnetic tunnel junction (MTJ)-based nonvolatile register designed for the greedy utilization of supplied energy in intermittent computing.
Masanori Natsui, Takahiro Hanyu
doaj   +1 more source

Superatom Distortion Induces Triferroicity and Spin Splitting in Two‐Dimensional Antiferromagnets

Advanced Science, EarlyView.
The incorporation of superatoms into a 2D square lattice induces symmetry breaking, thereby enabling concurrent coupling among magnetism, ferroelectricity, and ferroelasticity. This strategy achieves triferroic behavior—characterized by spin‐split antiferromagnetic ground states—and offers a viable pathway toward energy‐efficient spintronic devices ...
Zhen Gao, Fengxian Ma, Guoping Gao, Weizhen Meng, Ying Liu, Yandong Ma, Yalong Jiao   +6 more
wiley   +1 more source

Ferroelectric Devices for In‐Memory and In‐Sensor Computing

Advanced Science, EarlyView.
Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang, Ronghuan Xie, Qiang Cao, Shishen Yan, Xiaolin Wang, Limei Zheng   +5 more
wiley   +1 more source

Polymer and organic nonvolatile memory devices

, 2011
\u3cp\u3eOrganic molecules and semiconductors have been proposed as active part of a large variety of nonvolatile memory devices, including resistors, diodes and transistors.
Kim, Dong Yu, Muller, Robert N, Baeg, Kang Jun, Noh, Yong Young, Gelinck, G Gerwin, Heremans, P Paul   +5 more
core  

Flash-memories in Space Applications: Trends and Challenges [PDF]

, 2009
Nowadays space applications are provided with a processing power absolutely overcoming the one available just a few years ago. Typical mission-critical space system applications include also the issue of solid-state recorder(s).
Caramia, M., Caramia M., Fabiano, Michele, Prinetto, Paolo Ernesto, Di Carlo, Stefano   +4 more
core  

Sustainable Synaptic Device with Two‐Dimensional Ferroelectric Materials for Neuromorphic Computing

Advanced Science, EarlyView.
α‐In2Se3 based FeSFETs can be utilized as sustainable devices through polarization switching governed by both out‐of‐plane and in‐plane polarizations. Upon reaching a fatigued state, current annealing enabled by conductance modulation can significantly enhance the endurance of FeSFETs.
Jaewook Yoo, Seokjin Oh, Minah Park, Jong Min Song, Hongseung Lee, Seohyeon Park, Sojin Jung, Seongbin Lim, Soohyun Lim, Dongsun Shin, Ji Won Heo, TaeWan Kim, Hagyoul Bae   +12 more
wiley   +1 more source

Kinetics Features Conducive to Cache-Type Nonvolatile Phase-Change Memory

, 2019
Kinetics Features Conducive to Cache-Type Nonvolatile Phase-Change ...
Zeng, Xierong, Shen, Xiang, Chen, Yimin, Ding, Keyuan, Jiao, Fangying, Zhang, Wei, Rao, Feng, Ma, Evan, Li, Kunlong, Wang, Lei, Chen, Bin, Wang, Junqiang   +11 more
core   +1 more source