Results 1 to 10 of about 5,284 (228)

Practical Experiments to Evaluate Quality Metrics of MRAM-Based Physical Unclonable Functions

open access: yesIEEE Access, 2020
Process variations in the manufacturing of digital circuits can be leveraged to design Physical Unclonable Functions (PUFs) that are extensively employed in hardware-based security.
Lionel Torres   +2 more
exaly   +4 more sources

Nanoscale Materials for State-of-the-Art Magnetic Memory Technologies

open access: yesУспехи физики металлов, 2021
The review deals with different materials science aspects of the state-of-the-art magnetic memory technologies, such as magnetoresistive random-access memory (MRAM), antiferromagnetic (AFM) memory, and skyrmion racetrack memory.
A. E. Hafarov, S. M. Voloshko, A. Kaidatzis, I. A. Vladymyrskyi
doaj   +1 more source

Improving Bit-Error-Rate Performance Using Modulation Coding Techniques for Spin-Torque Transfer Magnetic Random Access Memory

open access: yesIEEE Access, 2023
In non-volatile random-access memory (RAM) technologies, the spin-torque transfer magnetic random-access memory (STT-MRAM) is a promising candidate. STT-MRAM has attracted attention owing to its advantages, such as a high density, high endurance, and ...
Thien An Nguyen, Jaejin Lee
doaj   +1 more source

Multi-level resistance uniformity of double pinned perpendicular magnetic-tunnel-junction spin-valve depending on top MgO barrier thickness

open access: yesAIP Advances, 2020
In order to utilize perpendicular spin-torque-transfer magnetic-random-access-memory (p-STT MRAM) as a storage class memory, the achievement of performing multi-level-cell (MLC) operation is important in increasing the integration density of p-STT MRAM ...
Han-Sol Jun   +7 more
doaj   +1 more source

Benchmarking and Optimization of Spintronic Memory Arrays

open access: yesIEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2020
In this article, we present a cross-layer optimization and benchmarking of various spintronic memory devices, including spin-transfer-torque magnetic random access memory (STT-MRAM), spin-orbit-torque (SOT) MRAM, voltage-controlled exchange coupling ...
Yu-Ching Liao, Chenyun Pan, Azad Naeemi
doaj   +1 more source

High-Accuracy Deep Belief Network: Fuzzy Neural Networks Using MRAM-Based Stochastic Neurons

open access: yesIEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2021
Two-terminal magnetoresistive random access memory (MRAM) devices provide a recent approach to intrinsically realizing stochastic neuronal behavior in cognitive architectures such as restricted Boltzmann machines (RBMs) for deep belief networks (DBNs ...
Hossein Pourmeidani, Ronald F. Demara
doaj   +1 more source

Evaluating the prevalence and risk factors for macrolide resistance in Mycoplasma genitalium using a newly developed qPCR assay.

open access: yesPLoS ONE, 2020
Mycoplasma genitalium (MG) is a sexually transmitted bacterium in which macrolide resistance is rapidly increasing, limiting treatment options. We validated a new assay to detect the presence of macrolide resistance-associated mutations in MG (MG-MRAM ...
Joyce F Braam   +8 more
doaj   +1 more source

Spin Transfer Torque Evaluation Based on Coupled Spin and Charge Transport: A Finite Element Method Approach [PDF]

open access: yesJournal of Systemics, Cybernetics and Informatics, 2022
Emerging spin transfer torque magnetoresistive random access memories (STT MRAM) are nonvolatile and offer high speed and endurance. MRAM cells include a fixed reference magnetic layer and a free-to-switch ferromagnetic layer (FL), separated by a tunnel ...
Simone Fiorentini   +4 more
doaj  

Hierarchical cache configuration based on hybrid SOT- and STT-MRAM

open access: yesAIP Advances, 2023
With the rapid growth of big data information and the continuous iteration progress of CPU architecture, the implementation of a new memory-based cache architecture is urgent and challenging. In the paper, a CPU cache architecture system based on MRAM is
Shaopu Han, Qiguang Wang, Yanfeng Jiang
doaj   +1 more source

Modeling and enhancing magnetic immunity of STT-MRAM

open access: yesAIP Advances, 2023
In this paper, the magnetic immunity model of STT-MRAM is established. The influence of the external magnetic field on the effective energy barrier of STT-MRAM is investigated, which is the crucial issue to influence the reliability of STT-MRAM cells in ...
Guangjun Zhang, Yanfeng Jiang
doaj   +1 more source

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