Results 1 to 10 of about 4,033 (229)
DSH-MRAM: Differential Spin Hall MRAM for On-Chip Memories [PDF]
IEEE Electron Device Letters, 2013 A new device structure for spin transfer torque based magnetic random access memory is proposed for on-chip memory applications. Our device structure exploits spin Hall effect to create a differential memory cell that exhibits fast and energy-efficient write operation.
Sri Harsha Choday, Yusung Kim
exaly +3 more sources
Practical Experiments to Evaluate Quality Metrics of MRAM-Based Physical Unclonable Functions
IEEE Access, 2020 Process variations in the manufacturing of digital circuits can be leveraged to design Physical Unclonable Functions (PUFs) that are extensively employed in hardware-based security.
Arash Nejat +2 more
exaly +3 more sources
A scalable neural network emulator with MRAM-based mixed-signal circuits [PDF]
Frontiers in NeuroscienceIn this study, we present a mixed-signal framework that utilizes MRAM (Magneto-resistive Random Access Memory) technology to emulate behaviors observed in biological neural networks on silicon substrates.
Jua Lee +11 more
doaj +2 more sources
Research on Open Magnetic Shielding Packaging for STT and SOT-MRAM [PDF]
MicromachinesAs an emerging type of non-volatile memory, magneto-resistive random access memory (MRAM) stands out for its exceptional reliability and rapid read–write speeds, thereby garnering considerable attention within the industry.
Haibo Ye +8 more
doaj +2 more sources
Assessing the logistics industry efficiency with a modified range adjusted measure [PDF]
Scientific ReportsHow to accurately assess logistics industry efficiency to identify production issues and provide support for optimizing logistics efficiency has become a current research challenge. Range adjust measure (RAM) is a method for efficiency assessment in data
Chongyu Ma, Jianwei Ren, Chunhua Chen
doaj +2 more sources
TPCSA-MRAM: Ternary Precharge Sense Amplifier-Based MRAM
IEEE AccessThe emerging multi-value logic technology in memory systems has increased data storage capacity and power efficiency. In this paper, to address the power consumption challenge of ternary memory, a ternary precharge sense amplifier (TPCSA)-based magnetic ...
Mohammad Mahdi Mazaheri +2 more
doaj +2 more sources
Nanoscale Materials for State-of-the-Art Magnetic Memory Technologies
Успехи физики металлов, 2021 The review deals with different materials science aspects of the state-of-the-art magnetic memory technologies, such as magnetoresistive random-access memory (MRAM), antiferromagnetic (AFM) memory, and skyrmion racetrack memory.
A. E. Hafarov, S. M. Voloshko, A. Kaidatzis, I. A. Vladymyrskyi
doaj +1 more source
Optimizing the Write Fidelity of MRAMs [PDF]
2020 IEEE International Symposium on Information Theory (ISIT), 2020 Magnetic random-access memory (MRAM) is a promising memory technology due to its high density, non-volatility, and high endurance. However, achieving high memory fidelity incurs significant write-energy costs, which should be reduced for large-scale deployment of MRAMs.
Yongjune Kim 0001 +3 more
openaire +2 more sources
IEEE Access, 2023 In non-volatile random-access memory (RAM) technologies, the spin-torque transfer magnetic random-access memory (STT-MRAM) is a promising candidate. STT-MRAM has attracted attention owing to its advantages, such as a high density, high endurance, and ...
Thien An Nguyen, Jaejin Lee
doaj +1 more source
AIP Advances, 2020 In order to utilize perpendicular spin-torque-transfer magnetic-random-access-memory (p-STT MRAM) as a storage class memory, the achievement of performing multi-level-cell (MLC) operation is important in increasing the integration density of p-STT MRAM ...
Han-Sol Jun +7 more
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