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MRAM: A Versatile Non-Volatile Memory for Next-Generation Computing [PDF]
NanomaterialsMagnetoresistive random-access memory (MRAM), as a promising non-volatile memory technology, has attracted extensive research interest owing to its unique combination of high operating speed, exceptional endurance, low standby power consumption, and CMOS
Zhihan Wang, Haiwen Li, Sheng Jiang
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Research on Open Magnetic Shielding Packaging for STT and SOT-MRAM [PDF]
MicromachinesAs an emerging type of non-volatile memory, magneto-resistive random access memory (MRAM) stands out for its exceptional reliability and rapid read–write speeds, thereby garnering considerable attention within the industry.
Haibo Ye +8 more
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A scalable neural network emulator with MRAM-based mixed-signal circuits [PDF]
Frontiers in NeuroscienceIn this study, we present a mixed-signal framework that utilizes MRAM (Magneto-resistive Random Access Memory) technology to emulate behaviors observed in biological neural networks on silicon substrates.
Jua Lee +11 more
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Nanoscale Materials for State-of-the-Art Magnetic Memory Technologies
Успехи физики металлов, 2021 The review deals with different materials science aspects of the state-of-the-art magnetic memory technologies, such as magnetoresistive random-access memory (MRAM), antiferromagnetic (AFM) memory, and skyrmion racetrack memory.
A. E. Hafarov, S. M. Voloshko, A. Kaidatzis, I. A. Vladymyrskyi
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IEEE Access, 2023 In non-volatile random-access memory (RAM) technologies, the spin-torque transfer magnetic random-access memory (STT-MRAM) is a promising candidate. STT-MRAM has attracted attention owing to its advantages, such as a high density, high endurance, and ...
Thien An Nguyen, Jaejin Lee
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AIP Advances, 2020 In order to utilize perpendicular spin-torque-transfer magnetic-random-access-memory (p-STT MRAM) as a storage class memory, the achievement of performing multi-level-cell (MLC) operation is important in increasing the integration density of p-STT MRAM ...
Han-Sol Jun +7 more
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Benchmarking and Optimization of Spintronic Memory Arrays
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2020 In this article, we present a cross-layer optimization and benchmarking of various spintronic memory devices, including spin-transfer-torque magnetic random access memory (STT-MRAM), spin-orbit-torque (SOT) MRAM, voltage-controlled exchange coupling ...
Yu-Ching Liao, Chenyun Pan, Azad Naeemi
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High-Accuracy Deep Belief Network: Fuzzy Neural Networks Using MRAM-Based Stochastic Neurons
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2021 Two-terminal magnetoresistive random access memory (MRAM) devices provide a recent approach to intrinsically realizing stochastic neuronal behavior in cognitive architectures such as restricted Boltzmann machines (RBMs) for deep belief networks (DBNs ...
Hossein Pourmeidani, Ronald F. Demara
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PLoS ONE, 2020 Mycoplasma genitalium (MG) is a sexually transmitted bacterium in which macrolide resistance is rapidly increasing, limiting treatment options. We validated a new assay to detect the presence of macrolide resistance-associated mutations in MG (MG-MRAM ...
Joyce F Braam +8 more
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Spin Transfer Torque Evaluation Based on Coupled Spin and Charge Transport: A Finite Element Method Approach [PDF]
Journal of Systemics, Cybernetics and Informatics, 2022 Emerging spin transfer torque magnetoresistive random access memories (STT MRAM) are nonvolatile and offer high speed and endurance. MRAM cells include a fixed reference magnetic layer and a free-to-switch ferromagnetic layer (FL), separated by a tunnel ...
Simone Fiorentini +4 more
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