Results 1 to 10 of about 900,366 (207)

Performing Stateful Logic Using Spin-Orbit Torque (SOT) MRAM

2022 IEEE 22nd International Conference on Nanotechnology (NANO), 2022
Stateful logic is a promising processing-in-memory (PIM) paradigm to perform logic operations using emerging nonvolatile memory cells. While most stateful logic circuits to date focused on technologies such as resistive RAM, we propose two approaches to designing stateful logic using spin orbit torque (SOT) MRAM.
Hoffer, Barak, Kvatinsky, Shahar
openaire   +4 more sources

A 3-Bit Flash Spin-Orbit Torque (SOT)-Analog-to-Digital Converter (ADC)

IEEE Transactions on Electron Devices, 2022
Farshad Moradi, Tim Böhnert, Yasser Rezaeiyan   +2 more
exaly   +3 more sources

Spin–orbit torque characterization in a nutshell

APL Materials, 2021
Spin current and spin torque generation through the spin–orbit interactions in solids, of bulk or interfacial origin, is at the heart of spintronics research.
Minh-Hai Nguyen, Chi-Feng Pai
doaj   +1 more source

Electric Field Control of Spin–Orbit Torque Magnetization Switching in a Spin–Orbit Ferromagnet Single Layer

Advanced Science, 2023
To achieve a desirable magnitude of spin–orbit torque (SOT) for magnetization switching and realize multifunctional spin logic and memory devices utilizing SOT, controlling the SOT manipulation is vitally important.
Miao Jiang, Hirokatsu Asahara, Shinobu Ohya, Masaaki Tanaka   +3 more
doaj   +1 more source

Spin–orbit torques in normal metal/Nb/ferromagnet heterostructures

Scientific Reports, 2021
Quantifying the spin–orbit torque (SOT) efficiency with changing the layer thickness is crucial for understanding the physical background of SOT. This study investigates the Nb-thickness-dependent SOT efficiency of two types of layered heterostructures ...
Min Hyeok Lee, Gyungchoon Go, Yong Jin Kim, In Ho Cha, Gyu Won Kim, Taehyun Kim, Kyung-Jin Lee, Young Keun Kim   +7 more
doaj   +1 more source

Composition dependence of spin–orbit torques in PtRh/ferromagnet heterostructures

APL Materials, 2021
We experimentally study the spin–orbit torque (SOT) in PtRh/heterostructures by varying the composition of PtRh alloy. By performing dc-biased spin-torque ferromagnetic resonance and second-harmonic measurements in PtxRh1−x/ferromagnet heterostructures ...
Guoyi Shi, Enlong Liu, Qu Yang, Yakun Liu, Kaiming Cai, Hyunsoo Yang   +5 more
doaj   +1 more source

Giant field-like torque by the out-of-plane magnetic spin Hall effect in a topological antiferromagnet

Nature Communications, 2021
Conventional spin-orbit torque (SOT) enables electrical control of in-plane spins, not suitable for perpendicular magnetization. Here, the authors observe a large magnetic-field-like SOT due to a large out-of-plane spin accumulation in topological ...
Kouta Kondou, Hua Chen, Takahiro Tomita, Muhammad Ikhlas, Tomoya Higo, Allan H. MacDonald, Satoru Nakatsuji, YoshiChika Otani   +7 more
doaj   +1 more source

Switching performance comparison between conventional SOT and STT-SOT write schemes with effect of shape deformation

AIP Advances, 2021
We demonstrate the effect of shape deformation in spin–orbit torque magnetoresistive random access memory (SOT-MRAM) based on micromagnetic simulation by generating 1000 randomly deformed samples using the exponentially decaying autocorrelation function.
J. Byun, D. H. Kang, M. Shin
doaj   +1 more source

Critical switching current density of magnetic tunnel junction with shape perpendicular magnetic anisotropy through the combination of spin-transfer and spin-orbit torques

Scientific Reports, 2021
Recently, magnetic tunnel junctions (MTJs) with shape perpendicular magnetic anisotropy (S-PMA) have been studied extensively because they ensure high thermal stability at junctions smaller than 20 nm.
Doo Hyung Kang, Mincheol Shin
doaj   +1 more source

Voltage-circuit analysis in spin-torque ferromagnetic resonance [PDF]

APL Materials
Spin–orbit torque (SOT) enables efficient control of magnetization via spin–orbit coupling effects, so that accurate quantification of its efficiency is crucial for the development of spin–orbit devices.
Ki Hyuk Han, Deok Hyun Yun, Seung-Hun Jang, Jeong Ung Ahn, Young-Jun Nah, YongJin Kim, Min-Gu Kang, Seokmin Hong, Hyun Cheol Koo, OukJae Lee   +9 more
doaj   +1 more source