Results 11 to 20 of about 793 (167)
Scientific Reports, 2021 Recently, magnetic tunnel junctions (MTJs) with shape perpendicular magnetic anisotropy (S-PMA) have been studied extensively because they ensure high thermal stability at junctions smaller than 20 nm.
Doo Hyung Kang, Mincheol Shin
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Voltage-circuit analysis in spin-torque ferromagnetic resonance [PDF]
APL MaterialsSpin–orbit torque (SOT) enables efficient control of magnetization via spin–orbit coupling effects, so that accurate quantification of its efficiency is crucial for the development of spin–orbit devices.
Ki Hyuk Han +9 more
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Spin–orbit torque generated by spin–orbit precession effect in Py/Pt/Co tri-layer structure
APL Materials, 2020 In this report, current-induced spin–orbit torques (SOTs) in a permalloy (Py)/Pt/Co tri-layer system are investigated. In addition to the conventional SOTs generated from the spin Hall effect in the Pt layer, we observed a distinct existence of ...
Y. Hibino +3 more
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Micromachines, 2021 Field-free switching in perpendicular magnetic tunnel junctions (P-MTJs) can be achieved by combined injection of spin-transfer torque (STT) and spin-orbit torque (SOT) currents. In this paper, we derived the relationship between the STT and SOT critical
Shaik Wasef, Hossein Fariborzi
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Spin-orbit torque (SOT) effective fields and SOT-induced switching in perpendicularly magnetized multilayers [PDF]
, 2020 Doctor of ...
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Multilevel states driven by spin-orbit torque in a P-composition graded (Ga,Mn)(As,P) film
AIP Advances, 2023 We have studied spin-orbit torque (SOT) magnetization switching in a (Ga,Mn)(As,P) film with vertically-graded magnetic anisotropy. The magnetization switching chirality during current scans reveals that strain-induced Dresselhaus-type spin-orbit field ...
Kyung Jae Lee +5 more
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AIP Advances, 2023 In this study, the validity of our DFT-based self-developed JunPy+SOT calculation method has been rigorously confirmed by the perpendicular magnetic anisotropy (PMA) induced effective magnetic anisotropy field of 5.6 kOe in a 1.5 nm-thick iron thin film.
Bao-Huei Huang, Yi-Feng Lai, Yu-Hui Tang
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High Performance Spin-Orbit-Torque (SOT) Based Non-volatile Standard Cell for Hybrid CMOS/Magnetic ICs [PDF]
Computer Science and Information Technology, 2017 Spin-orbit-torque magnetic tunnel junction (SOT-MTJ) is an emergent spintronics device with a promising potential. It resolves many issues encountered in the current MTJs state of the art. Although the existing Spin Transfer Torque (STT) technology is advantageous in terms of scalability and writing current, it suffers from the lack of reliability ...
Jabeur, Kotb +2 more
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Scientific Reports, 2022 We present a theoretical investigation of the magnetisation reversal process in CoFeB-based magnetic tunnel junctions (MTJs). We perform atomistic spin simulations of magnetisation dynamics induced by combination of spin orbit torque (SOT) and spin ...
Andrea Meo +3 more
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AIP Advances, 2023 Electrically driven magnetization switch has attracted much attention in the new spintronic memory, especially for spin–orbit torque (SOT)-based magnetic random access memory (MRAM). However, the published models are facing limitations with the continuous shrinkage of the feature size down to nanoscale.
Shaomin Li, Yanfeng Jiang
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