Results 11 to 20 of about 857,079 (204)

Enhanced spin-orbit torque (SOT) and spin accumulation quantification in perpendicularly magnetised systems [PDF]

, 2020
The ever increasing demand for high-speed data transfer and data processing have pushed the field of electronics toward spintronics, making the utilisation of electron spin in devices a reality. Spin-orbit torque (SOT) is a current-induced phenomenon which manipulates magnetisation via momentum transfer from accumulated spins at the heavy metal (HM ...
Wong, Qi Ying
openaire   +3 more sources

Efficient Current‐Driven Perpendicular Magnetization Switching Through the Synergy of the Orbital and Spin Hall Effects [PDF]

Advanced Science, EarlyView.
NiNb alloys enable efficient charge‐to‐spin conversion by combining the spin Hall effect of nickel with the orbital Hall effect of niobium. Composition tuning yields spin‐torque efficiencies of −1.4 to −1.7 and a non‐monotonic efficiency‐resistivity relationship, revealing orbital‐spin synergy beyond conventional spin Hall materials and offering a ...
Chuangwen Wu, Jing Zhou, Yibo Fan, Jiali Chen, Rongce Sun, Zonghao Deng, Zengxin Wei, Chuantong Ren, Xingen Zheng, Zhaowei Zhang, Jing Zhang, Jingfeng Li, Jinkui Zhao, Wei Jiang, Haibo Ke, Hao Wu, Weihua Wang   +16 more
wiley   +2 more sources

Noncollinear spin texture-driven torque in deterministic spin–orbit torque-induced magnetization switching

npj Spintronics
To reveal the role of chirality on field-free spin–orbit torque (SOT) induced magnetization switching, we propose an existence of z-torque through the formation of noncollinear spin texture during SOT-induced magnetization switching in a laterally two ...
Suhyeok An, Hyeong-Joo Seo, Dongryul Kim, Ki-Seung Lee, Eunchong Baek, Jun-Su Kim, Soobeom Lee, Chun-Yeol You   +7 more
doaj   +2 more sources

Magnetisation switching dynamics induced by combination of spin transfer torque and spin orbit torque [PDF]

Scientific Reports, 2022
We present a theoretical investigation of the magnetisation reversal process in CoFeB-based magnetic tunnel junctions (MTJs). We perform atomistic spin simulations of magnetisation dynamics induced by combination of spin orbit torque (SOT) and spin ...
Andrea Meo, Jessada Chureemart, Roy W. Chantrell, Phanwadee Chureemart   +3 more
doaj   +2 more sources

Generation of Probabilistic Bits by Exploiting Orthogonal Spin Currents in Magnetic Trilayers [PDF]

Advanced Science, EarlyView.
Fe/Ti/CoFeB trilayers generate orthogonal spin currents that drive stochastic spin–orbit‐torque switching for probabilistic‐bit operation. The switching probability is continuously controlled by the in‐plane magnetic field and drive current, enabling tunable random bit generation.
Donghyeon Han, Chaehyeon Shin, Seok‐Jong Kim, Yunho Jang, Daekyu Koh, Taehwan Kim, Jaeheon Jung, Geon‐Woo Baek, Minseok Kang, Eunseok Kim, Geun‐Hee Lee, Jeongchun Ryu, Makoto Kohda, Junsaku Nitta, Kab‐Jin Kim, Jongsun Park, Kyung‐Jin Lee, Byong‐Guk Park   +17 more
wiley   +2 more sources

Néel‐Vector‐Dependent Unconventional Spin‐Orbit Torque for Deterministic Field‐Free Switching in NiO (110)‐Based Trilayers [PDF]

Advanced Science, Volume 13, Issue 54, 28 September 2026.
Unconventional spin currents are generated in an antiferromagnetic NiO(110)/Ta/CoFeB trilayer, where the Néel vector governs spin transport. The resulting spin–orbit torques enable deterministic field‐free switching of perpendicular magnetization.
Hyeong‐Joo Seo, Seok‐Jong Kim, Phuoc Cao Van, Hong‐Cuong Truong, Dong‐Hyeon Han, Geunwoo Kim, Younghun Jo, Jong Hoon Jung, Soojung Kim, Chun‐Yeol You, Jong‐Ryul Jeong, Kyung‐Jin Lee, Byong‐Guk Park   +12 more
wiley   +2 more sources

Spin-orbit torque (SOT) effective fields and SOT-induced switching in perpendicularly magnetized multilayers [PDF]

, 2020
Doctor of ...
Li, Sihua
openaire   +3 more sources

Study of Spin Transfer Torque (STT) and Spin Orbit Torque (SOT) Magnetic Tunnel Junctions (MTJS) at Advanced CMOS Technology Nodes

Electrical and Electronics Engineering: An International Journal, 2017
Magnetic Random Access Memory (MRAM) is a promising candidate to be the universal non-volatile (NV) storage device. The Magnetic Tunnel Junction (MTJ) is the cornerstone of the NV-MRAM technology. 2-terminal MTJ based on Spin Transfer Torque (STT) switching is considered as a hot topic for academic and industrial researchers.
Kotb, Jabeur, Di Pendina, Gregory, Prenat, Guillaume   +2 more
openaire   +3 more sources

Radiation Resilient Synthetic Antiferromagnets‐Based Neuromorphic Device for Sea Surface Temperature Reconstruction [PDF]

Advanced Science, Volume 13, Issue 54, 28 September 2026.
By leveraging strong antiferromagnetic coupling, radiation‐tolerant synthetic antiferromagnetic synaptic devices are developed. Their intrinsic nonlinearity emulates neuronal activation, while linear and symmetric conductance modulation mimics synaptic plasticity.
Mingxu Song, Jiahao Liu, Ruisheng Hu, Teng Xu, Aihua Tang, Zhihong Zhu   +5 more
wiley   +2 more sources

MODELS OF SPIN TORQUE USING SELF-CONSISTENT SOLUTIONS OF THE MAGNETISATION AND SPIN ACCUMULATION [PDF]

, 2013
A model of spin accumulation (m) is proposed to develop theoretical approaches to calculate the m in any arbitrary magnetic structure. The model is based on generalising the approach of Zhang, Levy and Fert (PRL 88, 236601, 2002).
Chureemart, Phanwadee
core   +6 more sources