Results 11 to 20 of about 1,505 (193)
Enhanced spin-orbit torque (SOT) and spin accumulation quantification in perpendicularly magnetised systems [PDF]
The ever increasing demand for high-speed data transfer and data processing have pushed the field of electronics toward spintronics, making the utilisation of electron spin in devices a reality. Spin-orbit torque (SOT) is a current-induced phenomenon which manipulates magnetisation via momentum transfer from accumulated spins at the heavy metal (HM ...
Wong, Qi Ying
openaire +3 more sources
Magnetisation switching dynamics induced by combination of spin transfer torque and spin orbit torque [PDF]
We present a theoretical investigation of the magnetisation reversal process in CoFeB-based magnetic tunnel junctions (MTJs). We perform atomistic spin simulations of magnetisation dynamics induced by combination of spin orbit torque (SOT) and spin ...
Andrea Meo +3 more
doaj +2 more sources
To reveal the role of chirality on field-free spin–orbit torque (SOT) induced magnetization switching, we propose an existence of z-torque through the formation of noncollinear spin texture during SOT-induced magnetization switching in a laterally two ...
Suhyeok An +7 more
doaj +2 more sources
Spin-orbit torque (SOT) effective fields and SOT-induced switching in perpendicularly magnetized multilayers [PDF]
Doctor of ...
Li, Sihua
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High Performance Spin-Orbit-Torque (SOT) Based Non-volatile Standard Cell for Hybrid CMOS/Magnetic ICs [PDF]
Spin-orbit-torque magnetic tunnel junction (SOT-MTJ) is an emergent spintronics device with a promising potential. It resolves many issues encountered in the current MTJs state of the art. Although the existing Spin Transfer Torque (STT) technology is advantageous in terms of scalability and writing current, it suffers from the lack of reliability ...
Jabeur, Kotb +2 more
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Magnetic Random Access Memory (MRAM) is a promising candidate to be the universal non-volatile (NV) storage device. The Magnetic Tunnel Junction (MTJ) is the cornerstone of the NV-MRAM technology. 2-terminal MTJ based on Spin Transfer Torque (STT) switching is considered as a hot topic for academic and industrial researchers.
Kotb, Jabeur +2 more
openaire +3 more sources
Challenges and opportunities for spintronics based on spin orbit torque
Spintronic devices based on spin orbit torque (SOT) have become the most promising pathway to the next-generation of ultralow-power nonvolatile logic and memory applications.
Shuai Ning +3 more
doaj +2 more sources
Recent progress in spin-orbit torque magnetic random-access memory
Spin-orbit torque magnetic random-access memory (SOT-MRAM) offers promise for fast operation and high endurance but faces challenges such as low switching current, reliable field free switching, and back-end of line manufacturing processes.
V. D. Nguyen +3 more
doaj +2 more sources
Manipulation of local magnetization with spin-orbit torque (SOT) is a promising technology due to its minimal electromagnetic interference and fast response. Improving SOT efficiency is highly desired for energy conservation and device reliability.
Weikang Liu +10 more
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Topological spin-orbit torque in ferrimagnetic Weyl semimetal
We theoretically find a topological spin-orbit torque (SOT) in the compensated ferrimagnetic Weyl semimetal Ti_{2}MnAl. The topological SOT arises from all the occupied states, which is free from dissipation. However, it is negligible in metallic magnets
Tomonari Meguro +4 more
doaj +2 more sources

