Results 31 to 40 of about 900,366 (207)

Enhanced spin–orbit torque in Ni81Fe19/Pt bilayer with NdNiO3 contact

, 2021
스핀 오빗 토크(spin-orbit torque, SOT)는 강자성/비자성 이층구조에서 자화 변조에 필수적임. 페로브스카이트 산화물 NdNiO3와 Ni81Fe19/Pt 이중층으로 구성된 하이브리드 시스템에서 SOT가 향상될 수 있음을 입증하고, 금속 산화물 하이브리드 구조가 효율적인 SOT 기반 스핀트로닉스 장치의 개발을 위한 유망한 시스템이 될 수 있음을 ...
김상훈, 박정민, 박병국, 이상한, 장희찬, 이종민, 이수길, 박은강, 이년종, 김경환, 김태헌, 정지민, 이동현, 정세엽, 조영훈, Lee, Donghyeon, Younghun Jo, Donghyeon Lee, Heechan Jang, Jongmin Lee, Park, Eunkang, Jeong, Jimin, Byong-Guk Park, Jo, Younghun, Park, Jungmin, Tae Heon Kim, Lee, Jongmin, Lee, Soogil, Jeong, Seyeop, Jungmin Park, Lee, Nyun Jong, Jimin Jeong, Eunkang Park, Nyun Jong Lee, Kyoung-Whan Kim, Kim, Tae Heon, Kim, Sanghoon, Soogil Lee, Lee, Sanghan, Park, Byong-Guk, Seyeop Jeong, Sanghoon Kim, Jang, Heechan, Kim, Kyoung-Whan, Sanghan Lee   +44 more
core   +1 more source

Spin-orbit torque-assisted switching in magnetic insulator thin films with perpendicular magnetic anisotropy [PDF]

, 2016
As an in-plane charge current flows in a heavy metal film with spin-orbit coupling, it produces a torque on and thereby switches the magnetization in a neighbouring ferromagnetic metal film. Such spin-orbit torque (SOT)-induced switching has been studied
Csaba, Gyorgy, DeMann, August, Zhang, Wei, Li, Wei, Chang, Houchen, Richardson, Daniel, Wu, Mingzhong, Mryasov, Oleg, Porod, Wolfgang, Marconi, Mario C., Field, Stuart B., Rimal, Gaurab, Kalitsov, Alan, Jiang, J. S., Li, Peng, Liu, Tao, Hoffmann, Axel, Dey, Himadri, Tang, Jinke   +18 more
core   +2 more sources

Materials Relevant to Realizing a Field-Effect Transistor Based on Spin–Orbit Torques

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2019
Spin-orbit torque (SOT) is a promising mechanism for writing magnetic memories, while field-effect transistors (FETs) are the gold-standard device for logic operation.
Phillip Dang, Zexuan Zhang, Joseph Casamento, Xiang Li, Jashan Singhal, Darrell G. Schlom, Daniel C. Ralph, Huili Grace Xing, Debdeep Jena   +8 more
doaj   +1 more source

Spin–orbit torque switching in a T-type magnetic configuration with current orthogonal to easy axes

Nature Communications, 2019
Spin-orbit torque (SOT) induced magnetization switching facilitates all electric multi-state spin memories and spin logic devices. Here the authors show a new SOT field-free switching mode where the perpendicular layer with tilted easy axis is coupled to
W. J. Kong, C. H. Wan, X. Wang, B. S. Tao, L. Huang, C. Fang, C. Y. Guo, Y. Guang, M. Irfan, X. F. Han   +9 more
doaj   +1 more source

Spin‐Orbit Torque in Van der Waals‐Layered Materials and Heterostructures

Advanced Science, 2021
Spin‐orbit torque (SOT) opens an efficient and versatile avenue for the electrical manipulation of magnetization in spintronic devices. The enhancement of SOT efficiency and reduction of power consumption are key points for the implementation of high ...
Wei Tang, Haoliang Liu, Zhe Li, Anlian Pan, Yu‐Jia Zeng   +4 more
doaj   +1 more source

Beyond STT-MRAM, Spin Orbit Torque RAM SOT-MRAM for High Speed and High Reliability Applications [PDF]

, 2015
For 40 years, microelectronics has been following the Moore’s law, stating that the density and speed of integrated circuits would double every 18 months. However, this trend is presently getting out of breath, because of incoming insurmountable physical limits.
Prenat, Guillaume, Jabeur, Kotb, Di Pendina, Gregory, Boulle, Olivier, Gaudin, Gilles   +4 more
openaire   +3 more sources

High-Density Spin–Orbit Torque Magnetic Random Access Memory With Voltage-Controlled Magnetic Anisotropy/Spin-Transfer Torque Assist

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2022
This article explores an area saving scheme for spin–orbit torque (SOT) magnetic random access memory (MRAM) by sharing the SOT channel and write transistor among multiple magnetic tunnel junctions (MTJs).
Piyush Kumar, Azad Naeemi
doaj   +1 more source

Field-free switching model of spin–orbit torque (SOT)-MTJ device with thermal effect based on voltage-controlled magnetic anisotropy (VCMA)

AIP Advances, 2023
Electrically driven magnetization switch has attracted much attention in the new spintronic memory, especially for spin–orbit torque (SOT)-based magnetic random access memory (MRAM). However, the published models are facing limitations with the continuous shrinkage of the feature size down to nanoscale.
Shaomin Li, Yanfeng Jiang
openaire   +2 more sources

Spin orbit torque non-volatile flip-flop for high speed and low energy applications

, 2014
International audienceA novel nonvolatile flip-flop based on spin-orbit torque magnetic tunnel junctions (SOT-MTJs) is proposed for fast and ultralow energy applications. A case study of this nonvolatile flip-flop is considered.
Prenat, Guillaume, Jabeur, Kotb, Bernard-Granger, Fabrice, Di Pendina, Gregory   +3 more
core   +1 more source

Compact modeling of a magnetic tunnel junction based on spin orbit torque

, 2014
International audienceHigh endurance, high speed, scalability, low voltage, and CMOS-compatibility are the ideal attributes of memories that any integrated circuit designer dreams about.
Prenat, Guillaume, Dieny, Bernard, Jabeur, Kotb, Buda-Prejbeanu, Liliana Daniela, Pendina, Gregory Di   +4 more
core   +1 more source