Results 31 to 40 of about 1,505 (193)

Hybrid Non-Volatile Flip-Flops Using Spin-Orbit-Torque (SOT) Magnetic Tunnel Junction Devices for High Integration and Low Energy Power-Gating Applications [PDF]

Electronics, 2020
This paper presents two novel hybrid non-volatile flip-flops (NVFFs) comprised of the conventional CMOS flip-flop for static storage in normal operations and Spin-Orbit-Torque Magnetic Tunnel Junction (SOT-MTJ) devices for temporary storage during power gating.
openaire   +1 more source

Critical switching current of a perpendicular magnetic tunnel junction owing to the interplay of spin-transfer torque and spin-orbit torque

, 2021
Using the linearized Landau-Lifshitz-Gilbert (LLG) equation in the rotation coordinate, we calculate the critical switching current density of a perpendicular magnetic tunnel junction (MTJ), where magnetization switching is achieved by the interplay of ...
Shin, Mincheol, Byun, Ji-Hun, Kang, Doo Hyung   +2 more
core   +1 more source

Spin–orbit torque switching in a T-type magnetic configuration with current orthogonal to easy axes

Nature Communications, 2019
Spin-orbit torque (SOT) induced magnetization switching facilitates all electric multi-state spin memories and spin logic devices. Here the authors show a new SOT field-free switching mode where the perpendicular layer with tilted easy axis is coupled to
W. J. Kong, C. H. Wan, X. Wang, B. S. Tao, L. Huang, C. Fang, C. Y. Guo, Y. Guang, M. Irfan, X. F. Han   +9 more
doaj   +1 more source

Materials Relevant to Realizing a Field-Effect Transistor Based on Spin–Orbit Torques

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2019
Spin-orbit torque (SOT) is a promising mechanism for writing magnetic memories, while field-effect transistors (FETs) are the gold-standard device for logic operation.
Phillip Dang, Zexuan Zhang, Joseph Casamento, Xiang Li, Jashan Singhal, Darrell G. Schlom, Daniel C. Ralph, Huili Grace Xing, Debdeep Jena   +8 more
doaj   +1 more source

Anomalous sign inversion of spin-orbit torque in ferromagnetic/nonmagnetic bilayer systems due to self-induced spin-orbit torque

, 2022
Self-induced spin-orbit torques (SI-SOTs) in ferromagnetic (FM) layers have been overlooked when estimating the spin Hall angle (SHA) of adjacent nonmagnetic (NM) layers.
Shigematsu, Ei, Aoki, Motomi, Shiraishi, Masashi, Ando, Yuichiro, Ohshima, Ryo, Shinjo, Teruya   +5 more
core   +1 more source

Spin‐Orbit Torque in Van der Waals‐Layered Materials and Heterostructures

Advanced Science, 2021
Spin‐orbit torque (SOT) opens an efficient and versatile avenue for the electrical manipulation of magnetization in spintronic devices. The enhancement of SOT efficiency and reduction of power consumption are key points for the implementation of high ...
Wei Tang, Haoliang Liu, Zhe Li, Anlian Pan, Yu‐Jia Zeng   +4 more
doaj   +1 more source

High-Density Spin–Orbit Torque Magnetic Random Access Memory With Voltage-Controlled Magnetic Anisotropy/Spin-Transfer Torque Assist

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2022
This article explores an area saving scheme for spin–orbit torque (SOT) magnetic random access memory (MRAM) by sharing the SOT channel and write transistor among multiple magnetic tunnel junctions (MTJs).
Piyush Kumar, Azad Naeemi
doaj   +1 more source

Compact modeling of a magnetic tunnel junction based on spin orbit torque

, 2014
International audienceHigh endurance, high speed, scalability, low voltage, and CMOS-compatibility are the ideal attributes of memories that any integrated circuit designer dreams about.
Prenat, Guillaume, Dieny, Bernard, Jabeur, Kotb, Buda-Prejbeanu, Liliana Daniela, Pendina, Gregory Di   +4 more
core   +1 more source

Spin-orbit torque-assisted switching in magnetic insulator thin films with perpendicular magnetic anisotropy [PDF]

, 2016
As an in-plane charge current flows in a heavy metal film with spin-orbit coupling, it produces a torque on and thereby switches the magnetization in a neighbouring ferromagnetic metal film. Such spin-orbit torque (SOT)-induced switching has been studied
Kalitsov A, Mryasov O, DeMann A, Wu M, Jiang JS, Li P, Porod W, Liu T, Field SB, Csaba György, Dey H, Marconi MC, Hoffmann A, Zhang W, Li W, Rimal G, Tang J, Richardson D, Chang H   +18 more
core   +2 more sources

Spin orbit torque non-volatile flip-flop for high speed and low energy applications

, 2014
International audienceA novel nonvolatile flip-flop based on spin-orbit torque magnetic tunnel junctions (SOT-MTJs) is proposed for fast and ultralow energy applications. A case study of this nonvolatile flip-flop is considered.
Prenat, Guillaume, Jabeur, Kotb, Bernard-Granger, Fabrice, Di Pendina, Gregory   +3 more
core   +1 more source