Results 31 to 40 of about 857,079 (204)

Materials Relevant to Realizing a Field-Effect Transistor Based on Spin–Orbit Torques

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2019
Spin-orbit torque (SOT) is a promising mechanism for writing magnetic memories, while field-effect transistors (FETs) are the gold-standard device for logic operation.
Phillip Dang, Zexuan Zhang, Joseph Casamento, Xiang Li, Jashan Singhal, Darrell G. Schlom, Daniel C. Ralph, Huili Grace Xing, Debdeep Jena   +8 more
doaj   +1 more source

Spin‐Orbit Torque in Van der Waals‐Layered Materials and Heterostructures

Advanced Science, 2021
Spin‐orbit torque (SOT) opens an efficient and versatile avenue for the electrical manipulation of magnetization in spintronic devices. The enhancement of SOT efficiency and reduction of power consumption are key points for the implementation of high ...
Wei Tang, Haoliang Liu, Zhe Li, Anlian Pan, Yu‐Jia Zeng   +4 more
doaj   +1 more source

Challenges and opportunities for spintronics based on spin orbit torque

Fundamental Research, 2022
Spintronic devices based on spin orbit torque (SOT) have become the most promising pathway to the next-generation of ultralow-power nonvolatile logic and memory applications.
Shuai Ning, Haoliang Liu, Jingxiong Wu, Feng Luo   +3 more
doaj   +1 more source

Beyond STT-MRAM, Spin Orbit Torque RAM SOT-MRAM for High Speed and High Reliability Applications [PDF]

, 2015
For 40 years, microelectronics has been following the Moore’s law, stating that the density and speed of integrated circuits would double every 18 months. However, this trend is presently getting out of breath, because of incoming insurmountable physical limits.
Prenat, Guillaume, Jabeur, Kotb, Di Pendina, Gregory, Boulle, Olivier, Gaudin, Gilles   +4 more
openaire   +3 more sources

Field-free switching model of spin–orbit torque (SOT)-MTJ device with thermal effect based on voltage-controlled magnetic anisotropy (VCMA)

AIP Advances, 2023
Electrically driven magnetization switch has attracted much attention in the new spintronic memory, especially for spin–orbit torque (SOT)-based magnetic random access memory (MRAM). However, the published models are facing limitations with the continuous shrinkage of the feature size down to nanoscale.
Shaomin Li, Yanfeng Jiang
openaire   +2 more sources

Proton irradiation effects on spin orbit-torque and spin transfer-torque magnetic tunnel junctions

, 2021
International audienceThis paper aims to investigate proton irradiation effects on a new class of emerging devices: Perpendicular-Magnetic Anysotropy (PMA) Spin Orbit (SOT) Torque Magnetic Tunnel Junctions (MTJ)
Coi, Odilia, Garello, Kevin, Torres, Lionel, Ecoffet, Robert, Di Pendina, Gregory, Dangla, David   +5 more
core   +1 more source

Spin Orbit Torque Tunable Skyrmion Neuromorphic Devices

, 2023
Skyrmionic devices are promising candidates for energy efficient and highly integrated data storage and computing applications, owing to their small size, topological protection, and low drive current. In this abstract we propose novel spin orbit torque (
Li, Xiaohang, Lone, Aijaz H., Zou, Xuecui, Garcia, Glen Isaac Mac Iel, Fariborzi, Hossein   +4 more
core   +1 more source

High-Density Spin–Orbit Torque Magnetic Random Access Memory With Voltage-Controlled Magnetic Anisotropy/Spin-Transfer Torque Assist

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2022
This article explores an area saving scheme for spin–orbit torque (SOT) magnetic random access memory (MRAM) by sharing the SOT channel and write transistor among multiple magnetic tunnel junctions (MTJs).
Piyush Kumar, Azad Naeemi
doaj   +1 more source

Compact modeling of a magnetic tunnel junction based on spin orbit torque

, 2014
International audienceHigh endurance, high speed, scalability, low voltage, and CMOS-compatibility are the ideal attributes of memories that any integrated circuit designer dreams about.
Prenat, Guillaume, Dieny, Bernard, Jabeur, Kotb, Buda-Prejbeanu, Liliana Daniela, Pendina, Gregory Di   +4 more
core   +1 more source

Spin orbit torque non-volatile flip-flop for high speed and low energy applications

, 2014
International audienceA novel nonvolatile flip-flop based on spin-orbit torque magnetic tunnel junctions (SOT-MTJs) is proposed for fast and ultralow energy applications. A case study of this nonvolatile flip-flop is considered.
Prenat, Guillaume, Jabeur, Kotb, Bernard-Granger, Fabrice, Di Pendina, Gregory   +3 more
core   +1 more source