Results 21 to 30 of about 793 (167)
Spin–orbit torque switching in a T-type magnetic configuration with current orthogonal to easy axes
Nature Communications, 2019 Spin-orbit torque (SOT) induced magnetization switching facilitates all electric multi-state spin memories and spin logic devices. Here the authors show a new SOT field-free switching mode where the perpendicular layer with tilted easy axis is coupled to
W. J. Kong +9 more
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Challenges and opportunities for spintronics based on spin orbit torque
Fundamental Research, 2022 Spintronic devices based on spin orbit torque (SOT) have become the most promising pathway to the next-generation of ultralow-power nonvolatile logic and memory applications.
Shuai Ning +3 more
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Enhanced spin-orbit torque (SOT) and spin accumulation quantification in perpendicularly magnetised systems [PDF]
, 2020 The ever increasing demand for high-speed data transfer and data processing have pushed the field of electronics toward spintronics, making the utilisation of electron spin in devices a reality. Spin-orbit torque (SOT) is a current-induced phenomenon which manipulates magnetisation via momentum transfer from accumulated spins at the heavy metal (HM ...
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Materials Relevant to Realizing a Field-Effect Transistor Based on Spin–Orbit Torques
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2019 Spin-orbit torque (SOT) is a promising mechanism for writing magnetic memories, while field-effect transistors (FETs) are the gold-standard device for logic operation.
Phillip Dang +8 more
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Spin‐Orbit Torque in Van der Waals‐Layered Materials and Heterostructures
Advanced Science, 2021 Spin‐orbit torque (SOT) opens an efficient and versatile avenue for the electrical manipulation of magnetization in spintronic devices. The enhancement of SOT efficiency and reduction of power consumption are key points for the implementation of high ...
Wei Tang +4 more
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Beyond STT-MRAM, Spin Orbit Torque RAM SOT-MRAM for High Speed and High Reliability Applications [PDF]
, 2015 For 40 years, microelectronics has been following the Moore’s law, stating that the density and speed of integrated circuits would double every 18 months. However, this trend is presently getting out of breath, because of incoming insurmountable physical limits.
Prenat, Guillaume +4 more
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IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2022 This article explores an area saving scheme for spin–orbit torque (SOT) magnetic random access memory (MRAM) by sharing the SOT channel and write transistor among multiple magnetic tunnel junctions (MTJs).
Piyush Kumar, Azad Naeemi
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Role of dimensional crossover on spin-orbit torque efficiency in magnetic insulator thin films
Nature Communications, 2018 The spin-orbit torque (SOT) induced magnetic switching makes metal/magnetic insulators bilayers preferred in the energy efficient spintronic applications. Here the authors show SOT switching in W/TmIG bilayers and reveal the dimension crossover of SOT as
Qiming Shao +21 more
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APL Materials, 2023 We present the observation of field-free spin-orbit-torque (SOT) switching of magnetization in a ferromagnetic semiconductor (Ga,Mn)As film with four-fold in-plane magnetic anisotropy.
Kyoul Han +5 more
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Electrical and Electronics Engineering: An International Journal, 2017 Magnetic Random Access Memory (MRAM) is a promising candidate to be the universal non-volatile (NV) storage device. The Magnetic Tunnel Junction (MTJ) is the cornerstone of the NV-MRAM technology. 2-terminal MTJ based on Spin Transfer Torque (STT) switching is considered as a hot topic for academic and industrial researchers.
Kotb, Jabeur +2 more
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