Results 21 to 30 of about 1,505 (193)
Scientific Reports, 2021 Recently, magnetic tunnel junctions (MTJs) with shape perpendicular magnetic anisotropy (S-PMA) have been studied extensively because they ensure high thermal stability at junctions smaller than 20 nm.
Doo Hyung Kang, Mincheol Shin
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AIP Advances, 2023 Electrically driven magnetization switch has attracted much attention in the new spintronic memory, especially for spin–orbit torque (SOT)-based magnetic random access memory (MRAM). However, the published models are facing limitations with the continuous shrinkage of the feature size down to nanoscale.
Shaomin Li, Yanfeng Jiang
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Voltage-circuit analysis in spin-torque ferromagnetic resonance [PDF]
APL MaterialsSpin–orbit torque (SOT) enables efficient control of magnetization via spin–orbit coupling effects, so that accurate quantification of its efficiency is crucial for the development of spin–orbit devices.
Ki Hyuk Han +9 more
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Proton irradiation effects on spin orbit-torque and spin transfer-torque magnetic tunnel junctions
, 2021 International audienceThis paper aims to investigate proton irradiation effects on a new class of emerging devices: Perpendicular-Magnetic Anysotropy (PMA) Spin Orbit (SOT) Torque Magnetic Tunnel Junctions (MTJ)
Coi, Odilia +5 more
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Spin–orbit torque generated by spin–orbit precession effect in Py/Pt/Co tri-layer structure
APL Materials, 2020 In this report, current-induced spin–orbit torques (SOTs) in a permalloy (Py)/Pt/Co tri-layer system are investigated. In addition to the conventional SOTs generated from the spin Hall effect in the Pt layer, we observed a distinct existence of ...
Y. Hibino +3 more
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Micromachines, 2021 Field-free switching in perpendicular magnetic tunnel junctions (P-MTJs) can be achieved by combined injection of spin-transfer torque (STT) and spin-orbit torque (SOT) currents. In this paper, we derived the relationship between the STT and SOT critical
Shaik Wasef, Hossein Fariborzi
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Spin Orbit Torque Tunable Skyrmion Neuromorphic Devices
, 2023 Skyrmionic devices are promising candidates for energy efficient and highly integrated data storage and computing applications, owing to their small size, topological protection, and low drive current. In this abstract we propose novel spin orbit torque (
Li, Xiaohang +4 more
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AIP Advances, 2023 In this study, the validity of our DFT-based self-developed JunPy+SOT calculation method has been rigorously confirmed by the perpendicular magnetic anisotropy (PMA) induced effective magnetic anisotropy field of 5.6 kOe in a 1.5 nm-thick iron thin film.
Bao-Huei Huang, Yi-Feng Lai, Yu-Hui Tang
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Multilevel states driven by spin-orbit torque in a P-composition graded (Ga,Mn)(As,P) film
AIP Advances, 2023 We have studied spin-orbit torque (SOT) magnetization switching in a (Ga,Mn)(As,P) film with vertically-graded magnetic anisotropy. The magnetization switching chirality during current scans reveals that strain-induced Dresselhaus-type spin-orbit field ...
Kyung Jae Lee +5 more
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Beyond STT-MRAM, Spin Orbit Torque RAM SOT-MRAM for High Speed and High Reliability Applications [PDF]
, 2015 For 40 years, microelectronics has been following the Moore’s law, stating that the density and speed of integrated circuits would double every 18 months. However, this trend is presently getting out of breath, because of incoming insurmountable physical limits.
Prenat, Guillaume +4 more
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