Results 21 to 30 of about 857,079 (204)

Recent progress in spin-orbit torque magnetic random-access memory

open access: yesnpj Spintronics
Spin-orbit torque magnetic random-access memory (SOT-MRAM) offers promise for fast operation and high endurance but faces challenges such as low switching current, reliable field free switching, and back-end of line manufacturing processes.
V. D. Nguyen   +3 more
doaj   +2 more sources

Interlayer Dzyaloshinskii–Moriya Interaction in Synthetic Ferrimagnets for Spiking Neural Networks [PDF]

open access: yesAdvanced Science
Interlayer Dzyaloshinskii–Moriya interaction (IL‐DMI) in synthetic magnetic structures has attracted extensive interest for greatly facilitating deterministic spin‐orbit torque (SOT)‐driven information writing and topologically non‐trivial 3D magnetic ...
Shen Li   +14 more
doaj   +2 more sources

Voltage-circuit analysis in spin-torque ferromagnetic resonance [PDF]

open access: yesAPL Materials
Spin–orbit torque (SOT) enables efficient control of magnetization via spin–orbit coupling effects, so that accurate quantification of its efficiency is crucial for the development of spin–orbit devices.
Ki Hyuk Han   +9 more
doaj   +1 more source

Theoretical Study of Field-Free Switching in PMA-MTJ Using Combined Injection of STT and SOT Currents

open access: yesMicromachines, 2021
Field-free switching in perpendicular magnetic tunnel junctions (P-MTJs) can be achieved by combined injection of spin-transfer torque (STT) and spin-orbit torque (SOT) currents. In this paper, we derived the relationship between the STT and SOT critical
Shaik Wasef, Hossein Fariborzi
doaj   +1 more source

Spin–orbit torque generated by spin–orbit precession effect in Py/Pt/Co tri-layer structure

open access: yesAPL Materials, 2020
In this report, current-induced spin–orbit torques (SOTs) in a permalloy (Py)/Pt/Co tri-layer system are investigated. In addition to the conventional SOTs generated from the spin Hall effect in the Pt layer, we observed a distinct existence of ...
Y. Hibino   +3 more
doaj   +1 more source

Multilevel states driven by spin-orbit torque in a P-composition graded (Ga,Mn)(As,P) film

open access: yesAIP Advances, 2023
We have studied spin-orbit torque (SOT) magnetization switching in a (Ga,Mn)(As,P) film with vertically-graded magnetic anisotropy. The magnetization switching chirality during current scans reveals that strain-induced Dresselhaus-type spin-orbit field ...
Kyung Jae Lee   +5 more
doaj   +1 more source

Validity of DFT-based spin-orbit torque calculation for perpendicular magnetic anisotropy in iron thin films

open access: yesAIP Advances, 2023
In this study, the validity of our DFT-based self-developed JunPy+SOT calculation method has been rigorously confirmed by the perpendicular magnetic anisotropy (PMA) induced effective magnetic anisotropy field of 5.6 kOe in a 1.5 nm-thick iron thin film.
Bao-Huei Huang, Yi-Feng Lai, Yu-Hui Tang
doaj   +1 more source

High Performance Spin-Orbit-Torque (SOT) Based Non-volatile Standard Cell for Hybrid CMOS/Magnetic ICs [PDF]

open access: yesComputer Science and Information Technology, 2017
Spin-orbit-torque magnetic tunnel junction (SOT-MTJ) is an emergent spintronics device with a promising potential. It resolves many issues encountered in the current MTJs state of the art. Although the existing Spin Transfer Torque (STT) technology is advantageous in terms of scalability and writing current, it suffers from the lack of reliability ...
Jabeur, Kotb   +2 more
openaire   +3 more sources

Spin pumping in ferromagnet-topological insulator-ferromagnetheterostructures [PDF]

open access: yes, 2015
Topological insulators (TIs) are enticing prospects for the future of spintronics due to their large spin-orbit coupling and dissipationless, counter-propagating conduction channels in the surface state.
Baker, A. A.   +8 more
core   +1 more source

Spin–orbit torque switching in a T-type magnetic configuration with current orthogonal to easy axes

open access: yesNature Communications, 2019
Spin-orbit torque (SOT) induced magnetization switching facilitates all electric multi-state spin memories and spin logic devices. Here the authors show a new SOT field-free switching mode where the perpendicular layer with tilted easy axis is coupled to
W. J. Kong   +9 more
doaj   +1 more source

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