Results 41 to 50 of about 900,366 (207)

Field-free spin-orbit torque switching enabled by interlayer Dzyaloshinskii-Moriya interaction [PDF]

, 2022
Perpendicularly magnetized structures that are switchable using a spin current under field-free conditions can potentially be applied in spin-orbit torque magnetic random-access memory(SOT-MRAM).Several structures have been developed;however,new ...
Ognev, Alexey V., Wang, Yuqiang, Yu, Guoqiang, Luo, Xuming, Wan, Caihua, Zheng, Cuixiu, He, Wenqing, Guo, Chenyang, Han, Xiufeng, Liu, Yaowen, Ma, Tianyi, Stebliy, Maksim. E., Samardak, Alexander S., Wang, Yizhan, Wang, Xiao   +14 more
core   +1 more source

Study of Spin Transfer Torque (STT) and Spin Orbit Torque (SOT) Magnetic Tunnel Junctions (MTJS) at Advanced CMOS Technology Nodes

Electrical and Electronics Engineering: An International Journal, 2017
Magnetic Random Access Memory (MRAM) is a promising candidate to be the universal non-volatile (NV) storage device. The Magnetic Tunnel Junction (MTJ) is the cornerstone of the NV-MRAM technology. 2-terminal MTJ based on Spin Transfer Torque (STT) switching is considered as a hot topic for academic and industrial researchers.
Kotb, Jabeur, Di Pendina, Gregory, Prenat, Guillaume   +2 more
openaire   +2 more sources

Electrical Measurement Methods for Spin-Orbit Torque in Nonmagnet/Ferromagnet Bilayers

, 2019
Spin-orbit torque (SOT) is a spin torque based on spin-orbit coupling in a nonmagnet/ferromagnet heterostructure. In this structure, transverse spin current that is generated by an in-plane charge current and exerts torque on the adjacent ferromagnetic ...
이수길, 김정목, 박병국, 류정춘, 강재민, 이재욱, 박준영, 최종국   +7 more
core   +1 more source

Large damping-like spin-orbit torque in a ferromagnet/topological insulator bilayer from localized interfacial states

, 2022
A damping-like spin-orbit torque (SOT) is a prerequisite for ultralow-power spin logic devices. Here, we report on the damping-like SOT in just one monolayer of the conducting transition-metal dichalcogenide (TMD) TaS2 interfaced with a NiFe (Py ...
SHIN, SEUNGJU, LEE, HYUN WOO, Hyun-Woo Lee, Seungju Shin   +3 more
core   +1 more source

Role of dimensional crossover on spin-orbit torque efficiency in magnetic insulator thin films

Nature Communications, 2018
The spin-orbit torque (SOT) induced magnetic switching makes metal/magnetic insulators bilayers preferred in the energy efficient spintronic applications. Here the authors show SOT switching in W/TmIG bilayers and reveal the dimension crossover of SOT as
Qiming Shao, Chi Tang, Guoqiang Yu, Aryan Navabi, Hao Wu, Congli He, Junxue Li, Pramey Upadhyaya, Peng Zhang, Seyed Armin Razavi, Qing Lin He, Yawen Liu, Pei Yang, Se Kwon Kim, Cheng Zheng, Yizhou Liu, Lei Pan, Roger K. Lake, Xiufeng Han, Yaroslav Tserkovnyak, Jing Shi, Kang L. Wang   +21 more
doaj   +1 more source

Field-free spin-orbit-torque switching of a single ferromagnetic layer with fourfold in-plane magnetic anisotropy

APL Materials, 2023
We present the observation of field-free spin-orbit-torque (SOT) switching of magnetization in a ferromagnetic semiconductor (Ga,Mn)As film with four-fold in-plane magnetic anisotropy.
Kyoul Han, Kyung Jae Lee, Sanghoon Lee, Xinyu Liu, M. Dobrowolska, Jacek K. Furdyna   +5 more
doaj   +1 more source

Determining Perpendicular Magnetic Anisotropy in Fe/MgO/Fe Magnetic Tunnel Junction: A DFT-Based Spin-Orbit Torque Method [PDF]

, 2023
In our JunPy package, we have combined the first-principles calculated self-consistent Hamiltonian with divide-and-conquer technique to successfully determine the magnetic anisotropy (MA) in an Fe/MgO/Fe magnetic tunnel junction (MTJ).
Huang, Bao-Huei, Fu, Yu-Hsiang, Kaun, Chao-Cheng, Tang, Yu-Hui   +3 more
core   +1 more source

Enhanced spin–orbit torque efficiency in Pt/Co/Ho heterostructures via inserting Ho layer

APL Materials, 2020
Spin–orbit torque (SOT) is a promising approach to manipulate the magnetization for high-performance spintronic applications. In conventional SOT heterostructures with heavy metal (HM)/ferromagnet layers, the SOT efficiency is determined by the charge-to-
Tianli Jin, Wai Cheung Law, Durgesh Kumar, Feilong Luo, Qi Ying Wong, Gerard Joseph Lim, Xuan Wang, Wen Siang Lew, S. N. Piramanayagam   +8 more
doaj   +1 more source

Nitrospinics: Nitride Materials for Spin‐Orbit and Orbital Torques From Memory to Artificial Intelligence

Advanced Functional Materials, EarlyView.
Further advances in applications can be anticipated through the development of unique and functional materials beyond conventional alloys. Nitrogen enables tailor‐made orbital textures in various transition‐metal hosts, paving the way for devices ranging from spintronics memory to artificial intelligence hardware.
Prabhat Kumar, Gaurav Kumar Shukla, Yoshio Miura, Shinji Isogami   +3 more
wiley   +1 more source

Tunable unconventional spin orbit torque magnetization dynamics in van der Waals heterostructures. [PDF]

Nat Commun
Two-dimensional quantum material heterostructures can offer a promising platform for energy-efficient non-volatile spin-based technologies. However, spin dynamics experiments to understand the basic spin-orbit torque phenomena are so far lacking.
Pandey L, Zhao B, Tenzin K, Ngaloy R, Lamparská V, Bangar H, Ali A, Abdel-Hafiez M, Zhang G, Wu H, Chang H, Sjöström L, Rout P, Sławińska J, Dash SP.   +14 more
europepmc   +2 more sources