Results 41 to 50 of about 793 (167)

Bioinspired Adaptive Surfaces for Intelligent Liquid Manipulation: Progressing From Passive and Active to Hybrid Strategies

Advanced Materials, EarlyView.
This review examines passive, active, and hybrid liquid manipulation strategies, highlighting hybrid approaches as an emerging route to reconcile energy efficiency with adaptive control. By actively reconstructing passive surfaces to store programmable interfacial energy, hybrid systems enable flexible yet low‐power liquid transport, with perspectives ...
Jiaqi Miao, Yiyuan Zhang, Liqiu Wang, Alan C. H. Tsang   +3 more
wiley   +1 more source

Materials Requirements of High-Speed and Low-Power Spin-Orbit-Torque Magnetic Random-Access Memory

IEEE Journal of the Electron Devices Society, 2020
As spin-orbit-torque magnetic random-access memory (SOT-MRAM) is gathering great interest as the next-generation low-power and high-speed on-chip cache memory applications, it is critical to analyze the magnetic tunnel junction (MTJ) properties needed to
Xiang Li, Shy-Jay Lin, Mahendra Dc, Yu-Ching Liao, Chengyang Yao, Azad Naeemi, Wilman Tsai, Shan X. Wang   +7 more
doaj   +1 more source

Spin-orbit torques due to extrinsic spin-orbit scattering of topological insulator surface states: out-of-plane magnetization

JPhys Materials, 2022
The origins of the spin-orbit torque (SOT) at ferromagnet/topological insulator interfaces are incompletely understood. The theory has overwhelmingly focussed on the Edelstein effect due to the surface states in the presence of a scalar scattering ...
Mohsen Farokhnezhad, Reza Asgari, Dimitrie Culcer   +2 more
doaj   +1 more source

Generation of Probabilistic Bits by Exploiting Orthogonal Spin Currents in Magnetic Trilayers

Advanced Science, EarlyView.
Fe/Ti/CoFeB trilayers generate orthogonal spin currents that drive stochastic spin–orbit‐torque switching for probabilistic‐bit operation. The switching probability is continuously controlled by the in‐plane magnetic field and drive current, enabling tunable random bit generation.
Donghyeon Han, Chaehyeon Shin, Seok‐Jong Kim, Yunho Jang, Daekyu Koh, Taehwan Kim, Jaeheon Jung, Geon‐Woo Baek, Minseok Kang, Eunseok Kim, Geun‐Hee Lee, Jeongchun Ryu, Makoto Kohda, Junsaku Nitta, Kab‐Jin Kim, Jongsun Park, Kyung‐Jin Lee, Byong‐Guk Park   +17 more
wiley   +1 more source

Radiation Resilient Synthetic Antiferromagnets‐Based Neuromorphic Device for Sea Surface Temperature Reconstruction

Advanced Science, EarlyView.
By leveraging strong antiferromagnetic coupling, radiation‐tolerant synthetic antiferromagnetic synaptic devices are developed. Their intrinsic nonlinearity emulates neuronal activation, while linear and symmetric conductance modulation mimics synaptic plasticity.
Mingxu Song, Jiahao Liu, Ruisheng Hu, Teng Xu, Aihua Tang, Zhihong Zhu   +5 more
wiley   +1 more source

Néel‐Vector‐Dependent Unconventional Spin‐Orbit Torque for Deterministic Field‐Free Switching in NiO (110)‐Based Trilayers

Advanced Science, EarlyView.
Unconventional spin currents are generated in an antiferromagnetic NiO(110)/Ta/CoFeB trilayer, where the Néel vector governs spin transport. The resulting spin–orbit torques enable deterministic field‐free switching of perpendicular magnetization.
Hyeong‐Joo Seo, Seok‐Jong Kim, Phuoc Cao Van, Hong‐Cuong Truong, Dong‐Hyeon Han, Geunwoo Kim, Younghun Jo, Jong Hoon Jung, Soojung Kim, Chun‐Yeol You, Jong‐Ryul Jeong, Kyung‐Jin Lee, Byong‐Guk Park   +12 more
wiley   +1 more source

Efficient Current‐Driven Perpendicular Magnetization Switching Through the Synergy of the Orbital and Spin Hall Effects

Advanced Science, EarlyView.
NiNb alloys enable efficient charge‐to‐spin conversion by combining the spin Hall effect of nickel with the orbital Hall effect of niobium. Composition tuning yields spin‐torque efficiencies of −1.4 to −1.7 and a non‐monotonic efficiency‐resistivity relationship, revealing orbital‐spin synergy beyond conventional spin Hall materials and offering a ...
Chuangwen Wu, Jing Zhou, Yibo Fan, Jiali Chen, Rongce Sun, Zonghao Deng, Zengxin Wei, Chuantong Ren, Xingen Zheng, Zhaowei Zhang, Jing Zhang, Jingfeng Li, Jinkui Zhao, Wei Jiang, Haibo Ke, Hao Wu, Weihua Wang   +16 more
wiley   +1 more source

Micromagnetic simulations for magnetic-field-free magnetization switching by spin–orbit torque in a perpendicularly magnetized (Ga,Mn)As single layer

APL Materials
Spin–orbit torque (SOT) provides an efficient electrical means of magnetization switching in magnetic materials, presenting a significant potential for advancing next-generation information storage and memory technologies.
Miao Jiang, Xinyuan Yang, Yitao Yu, Shinobu Ohya, Masaaki Tanaka   +4 more
doaj   +1 more source

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

Toward Capacitive In‐Memory‐Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware

Advanced Intelligent Discovery, EarlyView.
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj, Ella Paasio, Sayani Majumdar   +2 more
wiley   +1 more source