Results 61 to 70 of about 900,366 (207)

Materials Requirements of High-Speed and Low-Power Spin-Orbit-Torque Magnetic Random-Access Memory

IEEE Journal of the Electron Devices Society, 2020
As spin-orbit-torque magnetic random-access memory (SOT-MRAM) is gathering great interest as the next-generation low-power and high-speed on-chip cache memory applications, it is critical to analyze the magnetic tunnel junction (MTJ) properties needed to
Xiang Li, Shy-Jay Lin, Mahendra Dc, Yu-Ching Liao, Chengyang Yao, Azad Naeemi, Wilman Tsai, Shan X. Wang   +7 more
doaj   +1 more source

Hybrid Non-Volatile Flip-Flops Using Spin-Orbit-Torque (SOT) Magnetic Tunnel Junction Devices for High Integration and Low Energy Power-Gating Applications [PDF]

Electronics, 2020
This paper presents two novel hybrid non-volatile flip-flops (NVFFs) comprised of the conventional CMOS flip-flop for static storage in normal operations and Spin-Orbit-Torque Magnetic Tunnel Junction (SOT-MTJ) devices for temporary storage during power gating.
openaire   +1 more source

Alloying‐Controlled Tuning of Interfacial Spin‐Orbit Interaction and Magnetic Damping in Crystalline FeCo Thin Films Grown on GaAs(001)

Advanced Materials, EarlyView.
The interfacial spin‐orbit interaction in single‐crystalline Fe1−xCox thin films grown on GaAs(001) can be continuously tuned via alloying. Using spin‐orbit ferromagnetic resonance, the authors find that the interfacial spin‐orbit fields exhibit a nonmonotonic dependence on Co concentration, with a minimum at 20% Co. ABSTRACT The discovery of intrinsic
Hongrui Lao, Matthias Kronseder, Zhe Yuan, Thomas Narr, Thomas N. G. Meier, Nadine Mundigl, Xianlin Qu, Zhongchang Wang, Christian H. Back, Lin Chen   +9 more
wiley   +1 more source

Enhanced Field‐Like Torque Generated from the Anisotropic Spin‐Split Effect in Triple‐Domain RuO2 for Energy‐Efficient Spin–Orbit Torque Magnetic Random‐Access Memory

Advanced Science
Spin‐current generation via the anisotropic spin‐split effect has been predicted in antiferromagnetic RuO2, where the symmetry of RuO2 plays a critical role in spin–orbit torque (SOT).
Thi Van Anh Nguyen, Hiroshi Naganuma, Thi Ngoc Huyen Vu, Samik DuttaGupta, Yoshiaki Saito, Duong Vu, Yasushi Endo, Shoji Ikeda, Tetsuo Endoh   +8 more
doaj   +1 more source

Current‐Induced Domain Wall Dynamics in Pt/Co/Ni/Co Nanoribbons With Curvilinear Cross‐Sections

Advanced Materials, EarlyView.
3D curvilinear magnetic racetrack nanoribbons are formed with concave and convex cross‐sections using an advanced multi‐photon 3D printer. The curvature is shown to strongly affect current‐induced domain wall motion along the nanoribbons. In nanoribbons with cross‐sections that have both concave and convex segments, the velocities of domain walls with ...
Tiange Dong, Jitul Deka, Chi Fang, André M. A. Farinha, Yicheng Guan, See‐Hun Yang, Stuart S. P. Parkin   +6 more
wiley   +1 more source

Field-Free Spin–Orbit Torque Switching Enabled by the Interlayer Dzyaloshinskii–Moriya Interaction

, 2022
Perpendicularly magnetized structures that are switchable using a spin current under field-free conditions can potentially be applied in spin–orbit torque magnetic random-access memory (SOT-MRAM).
Wenqing He (3738487), Yuqiang Wang (418189), Yizhan Wang (1617793), Cuixiu Zheng (13112922), Caihua Wan (3612401), Guoqiang Yu (110375), Xiufeng Han (3591425), Chenyang Guo (4852195), Yaowen Liu (4426561), Alexey V. Ognev (11326061), Alexander S. Samardak (11326073), Xiao Wang (19312), Xuming Luo (292233), Maksim E. Stebliy (11326049), Tianyi Ma (1498981)   +14 more
core   +2 more sources

Spin-orbit torque: spin accumulation techniques and interfacial investigation of topological insulator

, 2023
Spin-orbit torque (SOT) represents a promising direction in the field of spintronics, allowing the manipulation of magnetization via electric current. Originating from strong spin-orbit coupling in materials such as heavy metals or topological insulators,
Poh, Han Yin
core   +1 more source

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

Spin-orbit torque–driven propagating spin waves

, 2019
Copyright © 2019 The Authors, Spin-orbit torque (SOT) can drive sustained spin wave (SW) auto-oscillations in a class of emerging microwave devices known as spin Hall nano-oscillators (SHNOs), which have highly nonlinear properties governing robust ...
Zahedinejad, Mohammad,, Åkerman, Johan,, Muralidhar, Shreyas,, Fulara, Himanshu,, Khymyn, Roman,, Awad, Ahmad,, Dvornik, Mykola,, Muralidhar, S.,, Khymyn, R.,, Fulara, H.,, Awad, A. A.,, Dvornik, M.,, Zahedinejad, M.,   +12 more
core   +1 more source

Micromagnetic simulations for magnetic-field-free magnetization switching by spin–orbit torque in a perpendicularly magnetized (Ga,Mn)As single layer

APL Materials
Spin–orbit torque (SOT) provides an efficient electrical means of magnetization switching in magnetic materials, presenting a significant potential for advancing next-generation information storage and memory technologies.
Miao Jiang, Xinyuan Yang, Yitao Yu, Shinobu Ohya, Masaaki Tanaka   +4 more
doaj   +1 more source