Results 61 to 70 of about 1,505 (193)
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj +2 more
wiley +1 more source
Exploiting Ferroelectric and Spintronic Dynamics for Neural Network Computation
Ferroelectric and spintronic devices, relying on the control of polarization and magnetization, offer intrinsically fast, durable, energy‐efficient, and low‐latency building blocks for analog in‐memory computing. The hysteretic dynamics of an order parameter are leveraged to provide nonvolatile, multistate memory and nonlinear switching. Brain‐inspired
Dashiell Harrison +4 more
wiley +1 more source
Reversible strain-induced spin–orbit torque on flexible substrate
We propose the use of mechanical strain and mild annealing to achieve reversible modulation of spin-orbit torque (SOT) and Gilbert damping parameter.
Seet, Chim Seng +15 more
core +1 more source
The synthesized CCzymes possess both antioxidant enzyme activity and pharmacological properties inherent to Coptis chinensis. By their antioxidant enzyme activity, CCzymes can attenuate oxidative stress within the inflammatory region of ulcerative colitis (UC), while their pharmacological activity acts on macrophage polarization and the intestinal ...
Zhichao Deng +10 more
wiley +1 more source
Field-Free Spin–Orbit Torque Switching in Janus Chromium Dichalcogenides [PDF]
International audienceWe predict a very large spin–orbit torque (SOT) capability of magnetic chromium-based transition-metal dichalcogenide (TMD) monolayers in their Janus forms CrXTe, with X = S, Se.
Roche, Stephan +8 more
core +1 more source
Spin-orbit torque (SOT) represents a promising direction in the field of spintronics, allowing the manipulation of magnetization via electric current. Originating from strong spin-orbit coupling in materials such as heavy metals or topological insulators,
Poh, Han Yin
core +1 more source
Spin–orbit torque (SOT) provides an efficient electrical means of magnetization switching in magnetic materials, presenting a significant potential for advancing next-generation information storage and memory technologies.
Miao Jiang +4 more
doaj +1 more source
Low‐dimensional materials (0D, 1D, and 2D) exhibit unique electronic and physicochemical properties, enabling advanced nanoelectronic and optoelectronic devices. Mixed‐dimensional heterostructures combine these materials to enhance functionality.
Qaisar Alam +3 more
wiley +1 more source
Emergent Chaos‐Like Dynamics of Spin–Orbit‐Torque‐Driven Magnetic Transitions
By combining anisotropy‐engineered nanometer‐scale nucleation sites with time‐resolved x‐ray holography and micromagnetic modeling, magnetization dynamics are directly imaged, revealing chaos‐like fluctuations and skyrmion shedding and highlighting the intrinsic complexity of spin‐orbit torque driven systems.
L.‐M. Kern +14 more
wiley +1 more source
Efficiency of Spin-Transfer Torque-Assisted Spin-Orbit Torque Magnetization Switching Under In-Plane External Field Application [PDF]
We have simulated the magnetization dynamics under implementing spin-transfer torque (STT) and spin-orbit torque (SOT) simultaneously, which is regarded as the writing process of the next-generation 3-D domain wall magnetic memory (3D-DWMM).
Kato, Takeshi, Pan, Da, Oshima, Daiki
core +1 more source

