Results 61 to 70 of about 857,079 (204)

Micromagnetic simulations for magnetic-field-free magnetization switching by spin–orbit torque in a perpendicularly magnetized (Ga,Mn)As single layer

APL Materials
Spin–orbit torque (SOT) provides an efficient electrical means of magnetization switching in magnetic materials, presenting a significant potential for advancing next-generation information storage and memory technologies.
Miao Jiang, Xinyuan Yang, Yitao Yu, Shinobu Ohya, Masaaki Tanaka   +4 more
doaj   +1 more source

Stochastic‐MTJ Sampler Arrays for In‐Array Monte–Carlo Estimation

Advanced Electronic Materials, EarlyView.
A low‐energy‐barrier magnetic tunnel junction array is operated as a probability‐domain sampler: each cell's random switching, programmed through a shared digital‐to‐analog converter, makes the per‐column multiply–accumulate an unbiased Monte–Carlo expectation estimator that returns both a mean and a calibrated uncertainty.
Ran Zhang, Nellie Laleni, Sina Ranjbar, Andreas Tsiougkos, Nandakishor Yadav, Vasilis Pavlidis, Thomas Kämpfe   +6 more
wiley   +1 more source

Amorphous Tungsten Driving Extraordinary Long‐Range Interlayer Exchange Coupling and Large Spin‐Orbit Torque

Advanced Electronic Materials, EarlyView.
The amorphous tungsten (W) is found to be a promising non‐magnetic interlayer simultaneously driving the long‐range interlayer exchange coupling and the large spin Hall effect in a synthetic antiferromagnet (SyAF). Thanks to these characteristics, efficient spin‐orbit torque switching is achieved in the SyAF.
Xueyao Hou, Keita Ito, Varun K. Kushwaha, Takumi Yamazaki, Junwei Gu, Zhenchao Wen, Keisuke Masuda, Jun Okabayashi, Shoya Sakamoto, Takeshi Seki   +9 more
wiley   +1 more source

Toward Capacitive In‐Memory‐Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware

Advanced Intelligent Discovery, EarlyView.
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj, Ella Paasio, Sayani Majumdar   +2 more
wiley   +1 more source

Exploiting Ferroelectric and Spintronic Dynamics for Neural Network Computation

Advanced Intelligent Systems, EarlyView.
Ferroelectric and spintronic devices, relying on the control of polarization and magnetization, offer intrinsically fast, durable, energy‐efficient, and low‐latency building blocks for analog in‐memory computing. The hysteretic dynamics of an order parameter are leveraged to provide nonvolatile, multistate memory and nonlinear switching. Brain‐inspired
Dashiell Harrison, Kevin Nadaud, Josquin Harrison, Guillaume F. Nataf, Laura Bégon‐Lours   +4 more
wiley   +1 more source

Ratchet phenomena in quantum dissipative systems with spin-orbit interactions [PDF]

, 2009
For the case of moderate-to-strong quantum dissipation it is demonstrated that under electric driving the spin ratchet mechanism is present if the periodic potential of an isolated superlattice with Rashba spin-orbit interaction (RSOI) is spatially ...
Smirnov, Sergey
core   +1 more source

Collinear Spin Current Induced by Artificial Modulation of Interfacial Symmetry

Advanced Science
Current induced spin–orbit torque (SOT) manipulation of magnetization is pivotal in spintronic devices. However, its application for perpendicular magnetic anisotropy magnets, crucial for high‐density storage and memory devices, remains nondeterministic ...
Zhuoyi Li, Zhe Zhang, Mengjie Wei, Xianyang Lu, Taotao Li, Jian Zhou, Yu Yan, Jun Du, Xinran Wang, Yao Li, Liang He, Jing Wu, Yang Gao, Rong Zhang, Yongbing Xu   +14 more
doaj   +1 more source

Two‐Dimensional van der Waals Antiferromagnets: Fabrication, Probes, Control, and Applications

Advanced Physics Research, EarlyView.
Two‐dimensional van der Waals antiferromagnets are emerging as versatile platforms for spintronic, optoelectronic, and quantum devices. This review summarizes recent progress in their fabrication, magnetic characterization, fields, interfacial engineering, chemical modification, and representative applications.
Huangyu Wu, Zeyu Han, Yueyao Wang, Yitao Yu, Mingyang Yin, Yikang Jin, Yongjun Huo, Lihong Gao, Zhuang Ma, Gang Zhang, Miao Jiang   +10 more
wiley   +1 more source

Magnetic Magnetic switching of Ta/CoFeB/MgO heterostructures via Spin-Orbit Torque for memory applications

, 2022
LAUREA MAGISTRALENel panorama delle tecnologie per le memorie emergenti, le giunzioni a effetto tunnel con anisotropia magnetica perpendicolare hanno attratto grande interesse grazie alla loro scalabilità, la loro stabilità termica e la possibilita ...
FETTIZIO, MATTEO
core  

Current-induced effective magnetic field acting on a domain wall in perpendicularly magnetized Pd/Co2MnGa

AIP Advances
We investigated the current-induced effective magnetic field Heff acting on a domain wall (DW) under an in-plane magnetic field H// along the current direction in a perpendicularly magnetized heterostructure composed of a Pd and Weyl ferromagnet Co2MnGa (
Takaya Koyama, Yuki Nishioka, Tetsuya Uemura, Michihiko Yamanouchi   +3 more
doaj   +1 more source