Results 51 to 60 of about 1,505 (193)

Temperature‐Resilient Reconfigurable Physical Unclonable Function Driven by Pulse Modulation Using CMOS‐Integrated Spintronic Chips

Advanced Science, EarlyView.
A reconfigurable physical unclonable function is developed using CMOS‐integrated SOT‐MRAM chips, leveraging a dual‐pulse strategy and offering enhanced environmental robustness. A temperature‐compensation effect arising from the CMOS transistor and SOT‐MTJ is revealed and established as a key prerequisite for thermal resilience.
Min Wang, Chuanpeng Jiang, Zhaohao Wang, Zhengyi Hou, Zhongkui Zhang, Yuanfu Zhao, Hong‐xi Liu, Weisheng Zhao   +7 more
wiley   +1 more source

A Comprehensive Study of Temperature and Its Effects in SOT-MRAM Devices

Micromachines, 2023
We employ a fully three-dimensional model coupling magnetization, charge, spin, and temperature dynamics to study temperature effects in spin-orbit torque (SOT) magnetoresistive random access memory (MRAM).
Tomáš Hadámek, Nils Petter Jørstad, Roberto Lacerda de Orio, Wolfgang Goes, Siegfried Selberherr, Viktor Sverdlov   +5 more
doaj   +1 more source

Field‐Free Spin‐Splitting‐Torque Driven Stochastic Neuron Mimicking the Neuromorphic Imagination for High‐Performance Recognition

Advanced Science, EarlyView.
The human brain's imagination, which enables autonomous driving hazard avoidance by completing missing visual information, relies on Gaussian‐stochastic neuron. We report the altermagnetic RuO2 spintronic neurons integrating field‐free switching and intrinsic Gaussian stochasticity, building an all‐spin ANN for high‐quality image repairing and high ...
Junwei Zeng, Baoshan Cui, Xi Guo, Jiahao Liu, Xiaoyu Feng, Liang Fang, Li Xi, Xiaolong Fan, Xiaoxi Liu, Yang Guo   +9 more
wiley   +1 more source

Topological Materials and Related Applications

Advanced Electronic Materials, EarlyView.
This review covers topological materials—including topological insulators, quantum valley Hall and quantum spin Hall insulators, and topological Weyl and Dirac semimetals—as well as their most recent advancements in fields such as spintronics, electronics, photonics, thermoelectrics, and catalysis.
Carlo Grazianetti, Roberto Mantovan, Emanuele Longo, Harold J. W. Zandvliet, Pantelis Bampoulis, Yu Pan, Fan Li, Xia Wang, Payton Downey, Alessandro Molle   +9 more
wiley   +1 more source

Spin-orbit torque–driven propagating spin waves

, 2019
Copyright © 2019 The Authors, Spin-orbit torque (SOT) can drive sustained spin wave (SW) auto-oscillations in a class of emerging microwave devices known as spin Hall nano-oscillators (SHNOs), which have highly nonlinear properties governing robust ...
Zahedinejad, Mohammad,, Åkerman, Johan,, Muralidhar, Shreyas,, Fulara, Himanshu,, Khymyn, Roman,, Awad, Ahmad,, Dvornik, Mykola,   +6 more
core   +1 more source

Continuous film spin-orbit torque characterization via four probe measurement

, 2022
Spin-orbit torque (SOT) characterization techniques generally require the Hall cross that generally demands lithography resources and time. It is highly desirable to characterize SOT efficiencies with minimal sample processing time.
Lim, Gerard Joseph, S. Wu, Poh, Francis, Poh, Han Yin, Jin, Tianli, H. Y. Poh, C. C. I. Ang, T. L. Jin, Lew, Wen Siang, Tan, Funan, Ang, Calvin Ching Ian, F. Poh, G. J. Lim, W. S. Lew, F. N. Tan, Wu, Shuo   +15 more
core   +1 more source

Materials Requirements of High-Speed and Low-Power Spin-Orbit-Torque Magnetic Random-Access Memory

IEEE Journal of the Electron Devices Society, 2020
As spin-orbit-torque magnetic random-access memory (SOT-MRAM) is gathering great interest as the next-generation low-power and high-speed on-chip cache memory applications, it is critical to analyze the magnetic tunnel junction (MTJ) properties needed to
Xiang Li, Shy-Jay Lin, Mahendra Dc, Yu-Ching Liao, Chengyang Yao, Azad Naeemi, Wilman Tsai, Shan X. Wang   +7 more
doaj   +1 more source

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

Electrical Measurement Methods for Spin-Orbit Torque in Nonmagnet/Ferromagnet Bilayers

, 2019
Spin-orbit torque (SOT) is a spin torque based on spin-orbit coupling in a nonmagnet/ferromagnet heterostructure. In this structure, transverse spin current that is generated by an in-plane charge current and exerts torque on the adjacent ferromagnetic ...
이수길, 김정목, 박병국, 류정춘, 강재민, 이재욱, 박준영, 최종국   +7 more
core   +1 more source

Spin-orbit torques due to extrinsic spin-orbit scattering of topological insulator surface states: out-of-plane magnetization

JPhys Materials, 2022
The origins of the spin-orbit torque (SOT) at ferromagnet/topological insulator interfaces are incompletely understood. The theory has overwhelmingly focussed on the Edelstein effect due to the surface states in the presence of a scalar scattering ...
Mohsen Farokhnezhad, Reza Asgari, Dimitrie Culcer   +2 more
doaj   +1 more source