Results 51 to 60 of about 793 (167)

Exploiting Ferroelectric and Spintronic Dynamics for Neural Network Computation

Advanced Intelligent Systems, EarlyView.
Ferroelectric and spintronic devices, relying on the control of polarization and magnetization, offer intrinsically fast, durable, energy‐efficient, and low‐latency building blocks for analog in‐memory computing. The hysteretic dynamics of an order parameter are leveraged to provide nonvolatile, multistate memory and nonlinear switching. Brain‐inspired
Dashiell Harrison, Kevin Nadaud, Josquin Harrison, Guillaume F. Nataf, Laura Bégon‐Lours   +4 more
wiley   +1 more source

Low‐Dimensional Materials and Van Der Waals Heterostructures for Energy Application: A Comprehensive Review

ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
Low‐dimensional materials (0D, 1D, and 2D) exhibit unique electronic and physicochemical properties, enabling advanced nanoelectronic and optoelectronic devices. Mixed‐dimensional heterostructures combine these materials to enhance functionality.
Qaisar Alam, Sajjad Ali, Pir Muhammad Ismail, ABM Sharif Hossain   +3 more
wiley   +1 more source

Collinear Spin Current Induced by Artificial Modulation of Interfacial Symmetry

Advanced Science
Current induced spin–orbit torque (SOT) manipulation of magnetization is pivotal in spintronic devices. However, its application for perpendicular magnetic anisotropy magnets, crucial for high‐density storage and memory devices, remains nondeterministic ...
Zhuoyi Li, Zhe Zhang, Mengjie Wei, Xianyang Lu, Taotao Li, Jian Zhou, Yu Yan, Jun Du, Xinran Wang, Yao Li, Liang He, Jing Wu, Yang Gao, Rong Zhang, Yongbing Xu   +14 more
doaj   +1 more source

Recent advances in spin‐orbit torque and magnetization switching of transition metal oxides

InfoScience, EarlyView.
This review systematically introduces recent advances in transition metal oxides spintronics, including the underlying mechanisms of spin current generation and related symmetry theory, the magnetization switching processes driven by spin currents and magnon currents, respectively, as well as their corresponding transport properties, finally presenting
Wenjing Huo, Huihui Ji, Minrui Li, Xiaoya Li, Xinyang Zhang, Xuanchi Zhou, Guowei Zhou, Xiaohong Xu   +7 more
wiley   +1 more source

Current-induced effective magnetic field acting on a domain wall in perpendicularly magnetized Pd/Co2MnGa

AIP Advances
We investigated the current-induced effective magnetic field Heff acting on a domain wall (DW) under an in-plane magnetic field H// along the current direction in a perpendicularly magnetized heterostructure composed of a Pd and Weyl ferromagnet Co2MnGa (
Takaya Koyama, Yuki Nishioka, Tetsuya Uemura, Michihiko Yamanouchi   +3 more
doaj   +1 more source

Field-free spin-orbit torques switching and its applications

npj Spintronics
We review various approaches to field-free spin-orbit torque (SOT) switching. One approach involves introducing in-plane symmetric breaking methods to conventional SOT, such as an in-plane effective magnetic field or magnetic anisotropy, spatial non ...
Min-Gu Kang, Soogil Lee, Byong-Guk Park
doaj   +1 more source

Field‐Free Spin‐Splitting‐Torque Driven Stochastic Neuron Mimicking the Neuromorphic Imagination for High‐Performance Recognition

Advanced Science, Volume 13, Issue 44, 7 August 2026.
The human brain's imagination, which enables autonomous driving hazard avoidance by completing missing visual information, relies on Gaussian‐stochastic neuron. We report the altermagnetic RuO2 spintronic neurons integrating field‐free switching and intrinsic Gaussian stochasticity, building an all‐spin ANN for high‐quality image repairing and high ...
Junwei Zeng, Baoshan Cui, Xi Guo, Jiahao Liu, Xiaoyu Feng, Liang Fang, Li Xi, Xiaolong Fan, Xiaoxi Liu, Yang Guo   +9 more
wiley   +1 more source

Ultralow Electrical Current Driven Field‐Free Spin‐Orbit Torque Switching of Magnetic Tunnel Junctions by Topological Insulators

Advanced Electronic Materials
Spin‐orbit torque‐driven magnetic random‐access memory (SOT‐MRAM) is one of the promising candidates for next‐generation memory technologies beyond Moore's law.
Xu Zhang, Aitian Chen, Yifan Zhang, Zhaozhuo Zeng, Yaqin Guo, Dongxing Zheng, Baoshan Cui, Chuangwen Wu, Wenjie Song, Shuo Yang, Zijun Luo, Jingfeng Li, Gianluca Gubbiotti, Xiufeng Han, Jinkui Zhao, Peng Yan, Xufeng Kou, Xixiang Zhang, Hao Wu   +18 more
doaj   +1 more source

Integrated Field‐Free SOT Domain‐Wall Synapses and MTJ Stochastic Neurons for Hardware Boltzmann Machines

Advanced Functional Materials, Volume 36, Issue 61, 30 July 2026.
Field‐free spin‐orbit torque domain‐wall synapses integrated with stochastic MTJ neurons enable compact hardware Boltzmann machines. Leveraging intrinsic stochasticity and multi‐level conductance, the system achieves efficient probabilistic learning with high accuracy, demonstrating a scalable spintronic platform for energy‐efficient edge AI.
Aijaz H. Lone, Meng Tang, Camelia Florica, Bin He, Jingkai Xu, Selma Amara, Georgian Melinte, Xixiang Zhang, Gianluca Setti   +8 more
wiley   +1 more source

Harnessing synergy of spin and orbital currents in heavy metal/ferromagnet multilayers

Communications Physics
Spin-orbitronics, exploiting electron spin and/or orbital angular momentum, offers a powerful route to energy-efficient spintronic applications. Recent research on orbital currents in light metals broadens the scope of spin-orbit torque (SOT).
Yumin Yang, Zhicheng Xie, Zhiyuan Zhao, Na Lei, Jianhua Zhao, Dahai Wei   +5 more
doaj   +1 more source