Machine learning for the development of new materials for a magnetic tunnel junction [PDF]
In materials science, we have been increasing the number of constituent elements in an alloy and compounds to improve their properties. For example, in magnetism and spintronics, ternary alloys, such as NdFeB and CoFeB have been developed and widely used
Atsufumi Hirohata +6 more
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Polarity-tunable field-free room-temperature spin orbit torque switching via topological symmetry breaking in an all-vdW heterostructure for spin logic applications [PDF]
Two-dimensional ferromagnetic materials hold great promise for advancing low-power, high-integrated spintronic devices due to their atomic flat surfaces and versatile interfacial modulation.
Fan Gao +17 more
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A binary stochastic neuron (BSN) or a probabilistic bit (p-bit) randomly fluctuates between digitized “0” and “1” with a controllable functionality of time-averaged value.
Taeyueb Kim +7 more
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Large Magnetoresistance in Magnetic Tunnel Junction Based on Ni-Adsorbed CrI3 with Half-Metallicity
Two-dimensional (2D) materials, especially the materials that have intrinsic ferromagnetism (FM), have attracted considerable attention due to their ultraclean interface, controllable stacking order, good flexibility, and other excellent characteristics.
Daming Zhou +8 more
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A novel computing-in-memory array based on STT-MRAM using high on–off ratio 2T-1M bit-cell [PDF]
With the rapid advancement of artificial intelligence (AI) and the explosion of data, there is an increasingly urgent demand for computing-in-memory technology.
Peng Liu +4 more
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Influence of CoFeB layer thickness on elastic parameters in CoFeB/MgO heterostructures
The surface acoustic waves, i.e., surface phonons may have huge potential for future spintronic devices, if coupled to other waves (e.g., spin waves) or quasiparticles.
S. Shekhar +4 more
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Shape anisotropy revisited in single-digit nanometer magnetic tunnel junctions
The thermal stability impedes the application of nanoscale magnetic tunnel junctions in electronic and spintronics devices. Here the authors achieved current-induced magnetization switching in magnetic tunnel junctions smaller than 10 nm with sufficient ...
K. Watanabe +4 more
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Numerical renormalization group study of the Loschmidt echo in Kondo systems
We study the dynamical properties of the one-channel and two-channel spin-1/2 Kondo models after quenching in Hamiltonian variables. Eigen spectrum of the initial and final Hamiltonians is calculated by using the numerical renormalization group method ...
Tomasz Ślusarski +2 more
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Spin effects on transport and zero-bias anomaly in a hybrid Majorana wire-quantum dot system
We examine the impact of spin effects on the nonequilibrium transport properties of a nanowire hosting Majorana zero-energy modes at its ends, coupled to a quantum dot junction with ferromagnetic leads.
Alexandre Huguet +2 more
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Semiconductors are promising for high performance spintronics but the low functioning temperature hampers their applications. Here the authors achieve a strong room temperature modulation of spin-dependent resistance in GaN nanowires, which marks an ...
Tae-Eon Park +11 more
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