Results 31 to 40 of about 9,271 (253)

Large Anomalous Nernst Effect in Disordered CoPt Thin Films for Planar Thermoelectric Sensing

Advanced Electronic Materials
The anomalous Nernst effect (ANE), which converts a thermal gradient into a transverse electric field, offers a promising route for planar thermoelectric devices and microscale heat‐flux sensors.
Mojtaba Mohammadi, Hiroyuki Awano, Kenji Tanabe   +2 more
doaj   +1 more source

Three‐Dimensional Anomalous Hall Sensing Enabled By Spin–Orbit Torque Driven Domain Reconfiguration In Chiral Multilayers

Advanced Functional Materials, EarlyView.
A three‐dimensional magnetic field sensor is realized in chiral W/CoFeB/MgO multilayers, where spin–orbit torques reversibly reconfigure homochiral stripe domains. The symmetry of the torque enables offset‐free in‐plane sensing, while the reproducible domain reconfiguration extends the linear out‐of‐plane range. An anomalous Hall readout delivers large‐
Sabri Koraltan, Rahul Gupta, Reshma Peremadathil Pradeep, Fabian Kammerbauer, Iryna Kononenko, Klemens Prügl, Michael Kirsch, Bernd Aichner, Santiago Helbig, Florian Bruckner, Claas Abert, Andrada Oana Mandru, Armin Satz, Gerhard Jakob, Hans Josef Hug, Mathias Kläui, Dieter Suess   +16 more
wiley   +1 more source

Electrical mutual switching in a noncollinear-antiferromagnetic–ferromagnetic heterostructure

Nature Communications
Spin-orbit torque (SOT) provides a promising mechanism for electrically encoding information in magnetic states. Unlike existing schemes, where the SOT is passively determined by the material and device structures, an active manipulation of the intrinsic
Ju-Young Yoon, Yutaro Takeuchi, Ryota Takechi, Jiahao Han, Tomohiro Uchimura, Yuta Yamane, Shun Kanai, Jun’ichi Ieda, Hideo Ohno, Shunsuke Fukami   +9 more
doaj   +1 more source

An overview of advanced instruments for magnetic characterization and measurements

Frontiers in Electronics
Magnetic materials play a pivotal role in emerging fields such as new energy, information technology, and biomedicine, where accurate magnetic characterization is essential for material innovation and device engineering.
Junbiao Zhao, Ligang Bai, Ligang Bai, Shen Li, Zhiqiang Cao, Zhiqiang Cao, Yi Peng, Yi Peng, Jinrui Bai, Xudong Cai, Xinmin Shi, Xiaoyang Lin, Xiaoyang Lin, Guodong Wei, Guodong Wei, Xueying Zhang, Xueying Zhang, Xueying Zhang   +17 more
doaj   +1 more source

Oxide Spintronics

IEEE Transactions on Electron Devices, 2007
Concomitant with the development of metal-based spintronics in the late 1980's and 1990's, important advances were made on the growth of high-quality oxide thin films and heterostructures. While this was at first motivated by the discovery of high-temperature superconductivity in perovskite Cu oxides, this technological breakthrough was soon applied to
Bibes, Manuel, Barthelemy, Agnes
openaire   +2 more sources

Fluctuation Relations for Spintronics [PDF]

Physical Review Letters, 2012
Fluctuation relations are derived in systems where the spin degree of freedom and magnetic interactions play a crucial role. The form of the non-equilibrium fluctuation theorems relies in the assumption of a local balance condition. We demonstrate that in some cases the presence of magnetic interactions violates this condition.
López, Rosa, Lim, Jong-Soo, Sánchez, David   +2 more
openaire   +4 more sources

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

Advanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva   +13 more
wiley   +1 more source

X-Ray Characterization of Semiconductor Materials and Advanced Packaging: A Perspective on Multidimensional Structural Analysis

Crystals
X-ray techniques provide powerful, non-destructive tools for structural characterization in semiconductor manufacturing and advanced packaging. Their strong penetration capability and sensitivity to multiple contrast mechanisms enable the investigation ...
Yumeng Jiang, Zhenwei Zhang, Zhongyi An, Xinyu Pan, Xinmin Shi, Ruonan Wang, Jiajian Li, Chengzhi Chen, Zhiqiang Cao, Yong Xu, Jiaqi Wei, Xueying Zhang, Yi Peng   +12 more
doaj   +1 more source

Spin-orbit torque-driven skyrmion dynamics revealed by time-resolved X-ray microscopy

Nature Communications, 2017
Magnetic skyrmions are potentially suitable for future spintronic devices, but their dynamical behaviour in real space remains elusive. Here, Wooet al. report nanosecond-dynamics of a 100nm-size magnetic skyrmion triggered by current-induced spin-orbit ...
Seonghoon Woo, Kyung Mee Song, Hee-Sung Han, Min-Seung Jung, Mi-Young Im, Ki-Suk Lee, Kun Soo Song, Peter Fischer, Jung-Il Hong, Jun Woo Choi, Byoung-Chul Min, Hyun Cheol Koo, Joonyeon Chang   +12 more
doaj   +1 more source

Quantifying Subsurface Weak in‐Plane Magnetization of Mixed Phase BiFeO3 by Scanning Nitrogen Vacancy Magnetometry

Advanced Functional Materials, EarlyView.
We use scanning nitrogen vacancy magnetometry to directly image the weak in‐plane magnetic moments in mixed phase BiFeO3 at the nanoscale and quantify the local magnetic moments to be 18.8±2.0 μB/nm2 in the rhombohedral‐like phase and 1.5±0.6 μB/nm2 in the well‐known non‐magnetic tetragonal‐like phase.
Lei Wang, Zhewen Xu, Yuwen Xu, Björn Josteinsson, Simon Josephy, Dawei Zhang, Yunlong Sun, Heung‐Sik Park, Jihun Kim, Kanghyun Chu, Kyung Song, Danyang Wang, Chan‐Ho Yang, Andrea Morales, Jan Seidel   +14 more
wiley   +1 more source