Results 21 to 30 of about 1,191 (183)
Benchmarking and Optimization of Spintronic Memory Arrays
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2020 In this article, we present a cross-layer optimization and benchmarking of various spintronic memory devices, including spin-transfer-torque magnetic random access memory (STT-MRAM), spin-orbit-torque (SOT) MRAM, voltage-controlled exchange coupling ...
Yu-Ching Liao, Chenyun Pan, Azad Naeemi
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IEEE Access, 2023 In non-volatile random-access memory (RAM) technologies, the spin-torque transfer magnetic random-access memory (STT-MRAM) is a promising candidate. STT-MRAM has attracted attention owing to its advantages, such as a high density, high endurance, and ...
Thien An Nguyen, Jaejin Lee
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Spin Transfer Torque Evaluation Based on Coupled Spin and Charge Transport: A Finite Element Method Approach [PDF]
Journal of Systemics, Cybernetics and Informatics, 2022 Emerging spin transfer torque magnetoresistive random access memories (STT MRAM) are nonvolatile and offer high speed and endurance. MRAM cells include a fixed reference magnetic layer and a free-to-switch ferromagnetic layer (FL), separated by a tunnel ...
Simone Fiorentini +4 more
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PLoS ONE, 2020 Mycoplasma genitalium (MG) is a sexually transmitted bacterium in which macrolide resistance is rapidly increasing, limiting treatment options. We validated a new assay to detect the presence of macrolide resistance-associated mutations in MG (MG-MRAM ...
Joyce F Braam +8 more
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Area-optimized design of SOT-MRAM
IEICE Electronics Express, 2020 Yeongkyo Seo, Kon-Woo Kwon
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Hierarchical cache configuration based on hybrid SOT- and STT-MRAM
AIP Advances, 2023 With the rapid growth of big data information and the continuous iteration progress of CPU architecture, the implementation of a new memory-based cache architecture is urgent and challenging. In the paper, a CPU cache architecture system based on MRAM is
Shaopu Han, Qiguang Wang, Yanfeng Jiang
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Modeling and enhancing magnetic immunity of STT-MRAM
AIP Advances, 2023 In this paper, the magnetic immunity model of STT-MRAM is established. The influence of the external magnetic field on the effective energy barrier of STT-MRAM is investigated, which is the crucial issue to influence the reliability of STT-MRAM cells in ...
Guangjun Zhang, Yanfeng Jiang
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Multi-Port 1R1W Transpose Magnetic Random Access Memory by Hierarchical Bit-Line Switching
IEEE Access, 2019 Emerging Magnetic Random-Access Memory (MRAM) has shown a great potential to replace Static-RAM (SRAM) and Dynamic-RAM (DRAM) in the working memories including Cache and main memory. MRAM benefits from its high-density, fast speed, low standby power, and
Liang Chang +3 more
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High Bandwidth and Highly Available Packet Buffer Design Using Multi-Retention Time MRAM
IEEE Access, 2023 Significant challenges are posed in the design of routers and switches by the explosive growth of internet traffic and the stringent requirements for high availability in the research area of computer networks.
Yongwoon Song, Munhyung Lee, Hyukjun Lee
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High-Density 1R/1W Dual-Port Spin-Transfer Torque MRAM
Micromachines, 2022 Spin-transfer torque magnetic random-access memory (STT-MRAM) has several desirable features, such as non-volatility, high integration density, and near-zero leakage power.
Yeongkyo Seo, Kon-Woo Kwon
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