Results 21 to 30 of about 5,284 (228)
Memorie magnetiche integrate [PDF]
, 2022 Tra le NVM, nel passato hanno avuto una grande diffusione le memorie a Floating Gate (EPROM, EEPROM, Flash), ma poiché si è raggiunto un limite nella scalabilità di tali dispositivi, è stato necessario svilupparne di alternativi, ad esempio basati ...
Cherubin, Matteo
core
High Bandwidth and Highly Available Packet Buffer Design Using Multi-Retention Time MRAM
IEEE Access, 2023 Significant challenges are posed in the design of routers and switches by the explosive growth of internet traffic and the stringent requirements for high availability in the research area of computer networks.
Yongwoon Song, Munhyung Lee, Hyukjun Lee
doaj +1 more source
High-Density 1R/1W Dual-Port Spin-Transfer Torque MRAM
Micromachines, 2022 Spin-transfer torque magnetic random-access memory (STT-MRAM) has several desirable features, such as non-volatility, high integration density, and near-zero leakage power.
Yeongkyo Seo, Kon-Woo Kwon
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Numerical study of two-terminal SOT-MRAM
, 2023 A fully three-dimensional model coupling charge, spin, magnetization, and temperature dynamics is employed to study the switching behavior of the two-terminal spin–orbit torque magnetoresistive random access memory (2T-SOT-MRAM).
Selberherr, Siegfried; orcid: +9 more
core +1 more source
IEEE Journal of the Electron Devices Society, 2020 We have developed a manufacturing-friendly spin-orbit torque magnetic random access memory (SOT-MRAM) technology in CMOS compatible 8-inch fab process.
Sk Ziaur Rahaman +16 more
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Proactively Invalidating Dead Blocks to Enable Fast Writes in STT-MRAM Caches
IEEE Access, 2022 Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM) is a promising emerging memory technology for on-chip caches. It has a low read access time and low leakage power. Unfortunately, however, STT-MRAM suffers from its long write latency and high
Yongjun Kim +4 more
doaj +1 more source
Optimizing the Write Fidelity of MRAMs [PDF]
2020 IEEE International Symposium on Information Theory (ISIT), 2020 Magnetic random-access memory (MRAM) is a promising memory technology due to its high density, non-volatility, and high endurance. However, achieving high memory fidelity incurs significant write-energy costs, which should be reduced for large-scale deployment of MRAMs.
Yongjune Kim 0001 +3 more
openaire +3 more sources
, 2022 A compact and energy-efficient magnetoresistive random-access memory (MRAM) technology could help lower the power consumption of data storage and ...
Hirohata, Atsufumi
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IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2017 The spin transfer torque magnetoresistive random access memory (STT-MRAM) is the leading candidate for spin-based memories. Nevertheless, the high write energy and read disturbance of the STT-MRAM motivated researchers to find other solutions.
Ibrahim Ahmed +5 more
doaj +1 more source
Materials Requirements of High-Speed and Low-Power Spin-Orbit-Torque Magnetic Random-Access Memory
IEEE Journal of the Electron Devices Society, 2020 As spin-orbit-torque magnetic random-access memory (SOT-MRAM) is gathering great interest as the next-generation low-power and high-speed on-chip cache memory applications, it is critical to analyze the magnetic tunnel junction (MTJ) properties needed to
Xiang Li +7 more
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