Results 21 to 30 of about 5,091 (240)
High-Density 1R/1W Dual-Port Spin-Transfer Torque MRAM
Micromachines, 2022 Spin-transfer torque magnetic random-access memory (STT-MRAM) has several desirable features, such as non-volatility, high integration density, and near-zero leakage power.
Yeongkyo Seo, Kon-Woo Kwon
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Memorie magnetiche integrate [PDF]
, 2022 Tra le NVM, nel passato hanno avuto una grande diffusione le memorie a Floating Gate (EPROM, EEPROM, Flash), ma poiché si è raggiunto un limite nella scalabilità di tali dispositivi, è stato necessario svilupparne di alternativi, ad esempio basati ...
Cherubin, Matteo
core
Proactively Invalidating Dead Blocks to Enable Fast Writes in STT-MRAM Caches
IEEE Access, 2022 Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM) is a promising emerging memory technology for on-chip caches. It has a low read access time and low leakage power. Unfortunately, however, STT-MRAM suffers from its long write latency and high
Yongjun Kim +4 more
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IEEE Journal of the Electron Devices Society, 2020 We have developed a manufacturing-friendly spin-orbit torque magnetic random access memory (SOT-MRAM) technology in CMOS compatible 8-inch fab process.
Sk Ziaur Rahaman +16 more
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Optimizing the Write Fidelity of MRAMs [PDF]
2020 IEEE International Symposium on Information Theory (ISIT), 2020 Magnetic random-access memory (MRAM) is a promising memory technology due to its high density, non-volatility, and high endurance. However, achieving high memory fidelity incurs significant write-energy costs, which should be reduced for large-scale deployment of MRAMs.
Yongjune Kim 0001 +3 more
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IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2017 The spin transfer torque magnetoresistive random access memory (STT-MRAM) is the leading candidate for spin-based memories. Nevertheless, the high write energy and read disturbance of the STT-MRAM motivated researchers to find other solutions.
Ibrahim Ahmed +5 more
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Materials Requirements of High-Speed and Low-Power Spin-Orbit-Torque Magnetic Random-Access Memory
IEEE Journal of the Electron Devices Society, 2020 As spin-orbit-torque magnetic random-access memory (SOT-MRAM) is gathering great interest as the next-generation low-power and high-speed on-chip cache memory applications, it is critical to analyze the magnetic tunnel junction (MTJ) properties needed to
Xiang Li +7 more
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Embedded Memory Hierarchy Exploration Based on Magnetic Random Access Memory
Journal of Low Power Electronics and Applications, 2014 Static random access memory (SRAM) is the most commonly employed semiconductor in the design of on-chip processor memory. However, it is unlikely that the SRAM technology will have a cell size that will continue to scale below 45 nm, due to the leakage ...
Luís Vitório Cargnini +4 more
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, 2022 A compact and energy-efficient magnetoresistive random-access memory (MRAM) technology could help lower the power consumption of data storage and ...
Hirohata, Atsufumi
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HeRMES: High-performance reliable MRAM-enabled storage [PDF]
, 2001 Magnetic RAM (MRAM) is a new memory technology with access and cost characteristics comparable to those of conventional dynamic RAM (DRAM) and the non-volatility of magnetic media such as disk.
Ethan L. Miller
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