Results 41 to 50 of about 4,033 (229)
Reliability of 4-Mbit Toggle MRAM [PDF]
, 2004 A 4Mb magnetoresistive random access memory (MRAM) with a novel magnetic free layer and toggle switching mode is presented. The new free layer uses a balanced synthetic-antiferromagnet trilayer structure and a novel write pulse sequence to provide robust
Johan Åkerman +18 more
core +3 more sources
IEEE Access, 2019 Thanks to its superior features of non-volatility, fast read/write speed, high endurance, and low power consumption, spin-torque transfer magnetic random access memory (STT-MRAM) has become a promising candidate for the next generation non-volatile ...
Zhong Xingwei +3 more
doaj +1 more source
On the Design of 7/9-Rate Sparse Code for Spin-Torque Transfer Magnetic Random Access Memory
IEEE Access, 2021 A design of 7/9-rate sparse code for spin-torque transfer magnetic random access memory (STT-MRAM) is proposed in this work. The STT-MRAM using spin-polarized current through magnetic tunnel junction (MTJ) to write data is one of the most promising ...
Chi Dinh Nguyen
doaj +1 more source
Neural network detector with sparse codes for spin transfer torque magnetic random access memory
Cogent Engineering, 2023 This paper presents leveraging the neural network detector to improve the performance of a spin transfer torque magnetic random-access memory (STT-MRAM), where the sparse coding scheme is also applied to protect the user data for the asymmetric write ...
Chi Dinh Nguyen
doaj +1 more source
Impact of Resistive-Bridge Defects in TAS-MRAM Architectures [PDF]
, 2012 International audienceMagnetic Random Access Memory (MRAM) is an emerging memory technology. Among existing MRAM technologies, the Thermally Assisted Switching (TAS) MRAM technology offers several advantages such as selectivity, single magnetic field and
P. Girard +16 more
core +1 more source
Thermally Robust Spin–Orbit Torque Switching in Low‐Resistivity Mo‐Alloyed β‐W Heterostructures
Advanced Functional Materials, EarlyView.Mo‐alloyed β‐W heterostructures exhibit enhanced spin‐orbit torque efficiency, reduced resistivity and switching current density, and reliable operation from −50 to +150°C. The optimized W87.3Mo12.7 device achieves high spin Hall conductivity with thermal robustness, highlighting its potential for energy‐efficient magnetic memory and automotive ...
Han Seok Ko +7 more
wiley +1 more source
, 2019 MRAM (Magneto-resistive random-access memory), czyli typ nieulotnej pamięci operacyjnej o swobodnym dostępie, wykorzystującej zjawisko gigantycznego magnetooporu lub tunelowy efekt magnetorezystancyjny.
Jasica, Gabriela
core
Hardware Implementation of a Fully Functional Stochastic p‐STT Neuron for Probabilistic Computing
Advanced Electronic MaterialsA stochastic binary neuron is developed for probabilistic computing using a perpendicular spin‐transfer torque (p‐STT) neuron device and its associated peripheral circuits.
Han‐Sol Jun +7 more
doaj +1 more source
Design, Automation & Test in Europe Conference & Exhibition (DATE), 2015, 2015 Physical Unclonable Functions are emerging cryptographic primitives used to implement low-cost device authentication and secure secret key generation. In this paper we propose an innovative design based on STT-MRAM memory. We exploit the high variability affecting the electrical resistance of the MTJ device in anti-parallel magnetization.
Vatajelu, Elena Ioana +3 more
openaire +4 more sources
Advanced Materials, EarlyView.Magnetic tunnel junctions (MTJs) using MgO tunnel barriers face challenges of high resistance‐area product and low tunnel magnetoresistance (TMR). To discover alternative materials, Literature Enhanced Ab initio Discovery (LEAD) is developed. The LEAD‐predicted materials are theoretically evaluated, showing that MTJs with dusting of ScN or TiN on ...
Sabiq Islam +6 more
wiley +1 more source