Results 41 to 50 of about 5,284 (228)

Materials, processes, devices and applications of magnetoresistive random access memory

International Journal of Extreme Manufacturing
Magnetoresistive random access memory (MRAM) is a promising non-volatile memory technology that can be utilized as an energy and space-efficient storage and computing solution, particularly in cache functions within circuits.
Meiyin Yang, Yan Cui, Jingsheng Chen, Jun Luo   +3 more
doaj   +1 more source

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source

MRAM Technology Status [PDF]

, 2013
Magnetoresistive Random Access Memory (MRAM) is much different from conventional types of memory like SRAM, DRAM, and Flash, where electric charge is used to store information.
Heidecker, Jason
core  

Generating Unconventional Spin‐Orbit Torques With Patterned Phase Gradients in Tungsten Thin Films

Advanced Materials, EarlyView.
ABSTRACT A key aim in spintronics is to achieve current‐induced magnetization switching via spin‐orbit torques without external magnetic fields. For this, the focus of recent work has been on introducing controlled lateral gradients across ferromagnet/heavy‐metal devices, giving variations in thickness, composition, or interface quality.
Lauren J. Riddiford, Anne Flechsig, Shilei Ding, Emir Karadža, Niklas Kercher, Tobias Goldenberger, Elisabeth Müller, Pietro Gambardella, Laura J. Heyderman, Aleš Hrabec   +9 more
wiley   +1 more source

Impact of Technology Scaling and Back-End-of-the-Line Technology Solutions on Magnetic Random-Access Memories

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
While magnetic random-access memories (MRAMs) are promising because of their nonvolatility, relatively fast speeds, and high endurance, there are major challenges in adopting them for the advanced technology nodes.
Piyush Kumar, Da Eun Shim, Siri Narla, Azad Naeemi   +3 more
doaj   +1 more source

A Nonvolatile Compute-in-Memory Macro Using Voltage-Controlled MRAM and In Situ Magnetic-to-Digital Converter

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2023
Compute-in-memory (CIM) accelerator has become a popular solution to achieve high energy efficiency for deep learning applications in edge devices. Recent works have demonstrated CIM macros using nonvolatile memories [spin transfer torque (STT)-MRAM and ...
Vinod Kurian Jacob, Jiyue Yang, Haoran He, Puneet Gupta, Kang L Wang, Sudhakar Pamarti   +5 more
doaj   +1 more source

Orbital Magnetic Moment Controlled Converse Magnetoelectric Effect in bcc‐Co3Mn/Fe/V/PMN‐PT Multiferroic Heterostructures

Advanced Science, EarlyView.
Based on orbital magnetic moment control, a material design strategy is proposed for a giant converse magnetoelectric effect in multiferroic heterostructures. This study will pioneer a promising route toward low‐power spintronic devices with an electric field.
Takamasa Usami, Yuichi Murakami, Ryota Watarai, Yu Shiratsuchi, Yoshihiro Gohda, Kohei Hamaya   +5 more
wiley   +1 more source

Ultra High-Density SOT-MRAM Design for Last-Level On-Chip Cache Application

, 2023
This paper presents ultra high-density spin-orbit torque magnetic random-access memory (SOT-MRAM) for last-level data cache application. Although SOT-MRAM has many appealing attributes of low write energy, nonvolatility, and high reliability, it poses ...
Kon-Woo Kwon, Yeongkyo Seo
core   +1 more source

Reliability of 4-Mbit Toggle MRAM

, 2004
A 4Mb magnetoresistive random access memory (MRAM) with a novel magnetic free layer and toggle switching mode is presented. The new free layer uses a balanced synthetic-antiferromagnet trilayer structure and a novel write pulse sequence to provide robust
Johan Åkerman, Mark Durlam, Srinivas Pietambaram, Ken Smith, Renu Dave, Philip Brown, Nick Rizzo, John Martin, Jason Janesky, Ji-Jun Sun, Greg Grynkewich, Jon Slaughter, Mark DeHerrera, Joseph Nahas, Earl Fuchs, Mark Griswold, Brian Butcher, Brad Engel, Saied Tehrani   +18 more
core   +2 more sources

Toggle Spin-Orbit Torque MRAM With Perpendicular Magnetic Anisotropy

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2019
Spin-orbit torque (SOT) is a promising switching mechanism for magnetic random-access memory (MRAM) as a result of the potential for improved switching speed and energy efficiency.
Naimul Hassan, Susana P. Lainez-Garcia, Felipe Garcia-Sanchez, Joseph S. Friedman   +3 more
doaj   +1 more source