Results 41 to 50 of about 5,091 (240)

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source

Materials, processes, devices and applications of magnetoresistive random access memory

International Journal of Extreme Manufacturing
Magnetoresistive random access memory (MRAM) is a promising non-volatile memory technology that can be utilized as an energy and space-efficient storage and computing solution, particularly in cache functions within circuits.
Meiyin Yang, Yan Cui, Jingsheng Chen, Jun Luo   +3 more
doaj   +1 more source

Generating Unconventional Spin‐Orbit Torques With Patterned Phase Gradients in Tungsten Thin Films

Advanced Materials, EarlyView.
ABSTRACT A key aim in spintronics is to achieve current‐induced magnetization switching via spin‐orbit torques without external magnetic fields. For this, the focus of recent work has been on introducing controlled lateral gradients across ferromagnet/heavy‐metal devices, giving variations in thickness, composition, or interface quality.
Lauren J. Riddiford, Anne Flechsig, Shilei Ding, Emir Karadža, Niklas Kercher, Tobias Goldenberger, Elisabeth Müller, Pietro Gambardella, Laura J. Heyderman, Aleš Hrabec   +9 more
wiley   +1 more source

Numerical study of two-terminal SOT-MRAM

, 2023
A fully three-dimensional model coupling charge, spin, magnetization, and temperature dynamics is employed to study the switching behavior of the two-terminal spin–orbit torque magnetoresistive random access memory (2T-SOT-MRAM).
Selberherr, Siegfried; orcid:, Jorstad, Nils Petter, Sverdlov, Viktor, Siegfried Selberherr, Hadamek, Tomas, Nils Petter Jørstad, Goes, Wolfgang, Viktor Sverdlov, Tomáš Hadámek, Wolfgang Goes   +9 more
core   +1 more source

Orbital Magnetic Moment Controlled Converse Magnetoelectric Effect in bcc‐Co3Mn/Fe/V/PMN‐PT Multiferroic Heterostructures

Advanced Science, EarlyView.
Based on orbital magnetic moment control, a material design strategy is proposed for a giant converse magnetoelectric effect in multiferroic heterostructures. This study will pioneer a promising route toward low‐power spintronic devices with an electric field.
Takamasa Usami, Yuichi Murakami, Ryota Watarai, Yu Shiratsuchi, Yoshihiro Gohda, Kohei Hamaya   +5 more
wiley   +1 more source

Impact of Technology Scaling and Back-End-of-the-Line Technology Solutions on Magnetic Random-Access Memories

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
While magnetic random-access memories (MRAMs) are promising because of their nonvolatility, relatively fast speeds, and high endurance, there are major challenges in adopting them for the advanced technology nodes.
Piyush Kumar, Da Eun Shim, Siri Narla, Azad Naeemi   +3 more
doaj   +1 more source

A Nonvolatile Compute-in-Memory Macro Using Voltage-Controlled MRAM and In Situ Magnetic-to-Digital Converter

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2023
Compute-in-memory (CIM) accelerator has become a popular solution to achieve high energy efficiency for deep learning applications in edge devices. Recent works have demonstrated CIM macros using nonvolatile memories [spin transfer torque (STT)-MRAM and ...
Vinod Kurian Jacob, Jiyue Yang, Haoran He, Puneet Gupta, Kang L Wang, Sudhakar Pamarti   +5 more
doaj   +1 more source

Generation of Probabilistic Bits by Exploiting Orthogonal Spin Currents in Magnetic Trilayers

Advanced Science, EarlyView.
Fe/Ti/CoFeB trilayers generate orthogonal spin currents that drive stochastic spin–orbit‐torque switching for probabilistic‐bit operation. The switching probability is continuously controlled by the in‐plane magnetic field and drive current, enabling tunable random bit generation.
Donghyeon Han, Chaehyeon Shin, Seok‐Jong Kim, Yunho Jang, Daekyu Koh, Taehwan Kim, Jaeheon Jung, Geon‐Woo Baek, Minseok Kang, Eunseok Kim, Geun‐Hee Lee, Jeongchun Ryu, Makoto Kohda, Junsaku Nitta, Kab‐Jin Kim, Jongsun Park, Kyung‐Jin Lee, Byong‐Guk Park   +17 more
wiley   +1 more source

Building and optimizing MRAM-based commodity memories

, 2014
Emerging non-volatile memory technologies such as MRAM are promising design solutions for energyefficient memory architecture, especially formobile systems. However, building commodityMRAMby reusing DRAM designs is not straightforward.
Wang, Jue, Dong, Xiangyu, Xie, Yuan
core   +1 more source

STT-MRAM error correction technology based on LDPC coding

AIP Advances, 2020
Spin transfer magnetoresistive random access memory (STT-MRAM) shows potential applications with the properties of non-volatility, low power consumption and high write/read speed.
Xue Zhang, Jianbin Liu, Yanfeng Jiang
doaj   +1 more source