Results 51 to 60 of about 4,033 (229)
Advanced Materials, EarlyView.ABSTRACT The accelerating expansion of data‐centric technologies is sharply increasing the energy burden of information storage, placing unprecedented pressure on the efficiency of magnetic switching. Conventional field‐driven reversal, once the foundation of magnetic memory, has become impractical in modern architectures due to its high energy cost ...
Mohammad H. Badarneh +2 more
wiley +1 more source
, 2003 对MTJ (磁隧道结）的GMR（巨磁阻）效应进行了分析。MTJ的结构、形态和工作条件会对GMR效应产生不同的影响。提出了一种4×1位MTJ MRAM（磁存储器）的电路结构，每个MRAM的存储单元由一个MTJ和一个MOSFET构成，用MTJ两磁极磁化方向的相对取向表示所存储的数据 ...
刘忠立, 尚也淳
core
Advanced Materials, EarlyView.The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj +8 more
wiley +1 more source
Materials, processes, devices and applications of magnetoresistive random access memory
International Journal of Extreme ManufacturingMagnetoresistive random access memory (MRAM) is a promising non-volatile memory technology that can be utilized as an energy and space-efficient storage and computing solution, particularly in cache functions within circuits.
Meiyin Yang +3 more
doaj +1 more source
IEEE Journal on Exploratory Solid-State Computational Devices and CircuitsWhile magnetic random-access memories (MRAMs) are promising because of their nonvolatility, relatively fast speeds, and high endurance, there are major challenges in adopting them for the advanced technology nodes.
Piyush Kumar +3 more
doaj +1 more source
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2023 Compute-in-memory (CIM) accelerator has become a popular solution to achieve high energy efficiency for deep learning applications in edge devices. Recent works have demonstrated CIM macros using nonvolatile memories [spin transfer torque (STT)-MRAM and ...
Vinod Kurian Jacob +5 more
doaj +1 more source
Generating Unconventional Spin‐Orbit Torques With Patterned Phase Gradients in Tungsten Thin Films
Advanced Materials, EarlyView.ABSTRACT A key aim in spintronics is to achieve current‐induced magnetization switching via spin‐orbit torques without external magnetic fields. For this, the focus of recent work has been on introducing controlled lateral gradients across ferromagnet/heavy‐metal devices, giving variations in thickness, composition, or interface quality.
Lauren J. Riddiford +9 more
wiley +1 more source
Offset Field Control for VCMA-MRAM [PDF]
, 2023 This work was supported by IMEC's Industrial Affiliation Program on STT-MRAM ...
Couet, Sebastien +15 more
core +1 more source
Self‐Assembled Calcite Architectures for Programmable Information Storage
Advanced Materials Technologies, EarlyView.Programmable biomineralization enables the formation of 3D calcite architectures that encode information through spatially defined refractive‐index modulations. Data are written via laser‐directed mineralization, stored in stable voxelized mineral structures, and retrieved non‐destructively through optical diffraction, offering a pathway toward ultra ...
Congrui Jin +2 more
wiley +1 more source
Toggle Spin-Orbit Torque MRAM With Perpendicular Magnetic Anisotropy
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2019 Spin-orbit torque (SOT) is a promising switching mechanism for magnetic random-access memory (MRAM) as a result of the potential for improved switching speed and energy efficiency.
Naimul Hassan +3 more
doaj +1 more source