Results 51 to 60 of about 5,284 (228)

STT-MRAM error correction technology based on LDPC coding

AIP Advances, 2020
Spin transfer magnetoresistive random access memory (STT-MRAM) shows potential applications with the properties of non-volatility, low power consumption and high write/read speed.
Xue Zhang, Jianbin Liu, Yanfeng Jiang
doaj   +1 more source

Ferroelectric Devices for In‐Memory and In‐Sensor Computing

Advanced Science, EarlyView.
Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang, Ronghuan Xie, Qiang Cao, Shishen Yan, Xiaolin Wang, Limei Zheng   +5 more
wiley   +1 more source

Advances and Perspectives in Graphene‐Based Quantum Dots Enabled Neuromorphic Devices

Advanced Science, EarlyView.
Graphene‐based QDs are zero‐dimensional carbon nanomaterials with pronounced quantum confinement and tunable electronic structures. Herein, we summarize their synthesis strategies and functionalization methods, and highlight their functional roles and operating mechanisms in devices, as well as recent advances in neuromorphic electronics. We anticipate
Yulin Zhen, Wei Zeng, Zherui Zhao, JiYu Zhao, Ziyan Huang, Zhuo Chen, Kui Zhou, Guanglong Ding, Su‐Ting Han, Ye Zhou   +9 more
wiley   +1 more source

Programmable Topological Magnetic Textures in Above‐Room‐Temperature 2D Ferromagnet Fe3GaTe2

Advanced Science, EarlyView.
This work demonstrates the programmable generation and deterministic modulation of magnetic skyrmion bags with high‐order topological numbers in the above‐room‐temperature 2D ferromagnet Fe3GaTe2 (FGaT) via current‐pulse control. Furthermore, highly efficient electrical manipulation and current‐driven parallel motion of these high‐order topological ...
Hanqing Shi, Yilian Xi, Jingwei Zhang, Jiaqi Liu, Zhizhen Ren, Shilei Zhang, Weichang Hao, Haifeng Feng, Yi Du   +8 more
wiley   +1 more source

Van der Waals Heterostructures for Next‐Generation Spintronics: Multiferroic‐Mediated Magnetoelectric Properties

Advanced Science, EarlyView.
As CMOS technology approaches fundamental energy limits, new paradigms for low‐power information processing are required. Magnetic systems are attractive for their spin transport, yet current‐induced magnetization control is energy inefficient. Multiferroic heterostructures enable energy‐efficient electric field manipulation of magnetism.
Donghyeon Lee, Jiwoong Yang, Inhyeok Oh, Sanghan Lee   +3 more
wiley   +1 more source

Atomistic simulations of perpendicular shape anisotropy MRAM [PDF]

The continuous growth in demand for high performance computing necessitates that future random access memory (RAM) demonstrate low power consumption without sacrificing performance or reliability.
Lack, Wayne
core   +2 more sources

Nickel Intercalation in Epitaxial Graphene on SiC(0001): A Novel Platform for Engineering Two‐Dimensional Heterostructures

Advanced Science, EarlyView.
Ni‐intercalated graphene on SiC is achieved through a scalable colloidal nanoparticle deposition route. 2D heterostructures show preserved graphene band structure, stable under ambient conditions, and robust interfacial magnetism. Intercalated 2D Ni represents a promising candidate for next‐generation spintronic devices and is a scalable pathway to ...
Ylea Vlamidis, Stiven Forti, Antonio Rossi, Arrigo Calzolari, Carmela Marinelli, Camilla Coletti, Stefan Heun, Stefano Veronesi   +7 more
wiley   +1 more source

Impact of Resistive-Bridge Defects in TAS-MRAM Architectures

, 2012
International audienceMagnetic Random Access Memory (MRAM) is an emerging memory technology. Among existing MRAM technologies, the Thermally Assisted Switching (TAS) MRAM technology offers several advantages such as selectivity, single magnetic field and
P. Girard, Alvarez-Hérault, Jérémy, J. Alvarez-Herault, A. Bosio, K. Mackay, G. Prenat, Mackay, Ken, Azevedo, João, Virazel, Arnaud, Girard, Patrick, Bosio, Alberto, A. Todri, Dilillo, Luigi, L. Dilillo, Todri-Sanial, Aida, J. Azevedo, A. Virazel   +16 more
core   +1 more source

Assessing the logistics industry efficiency with a modified range adjusted measure

Scientific Reports
How to accurately assess logistics industry efficiency to identify production issues and provide support for optimizing logistics efficiency has become a current research challenge. Range adjust measure (RAM) is a method for efficiency assessment in data
Chongyu Ma, Jianwei Ren, Chunhua Chen
doaj   +1 more source

STT MRAM-Based PUFs

Design, Automation & Test in Europe Conference & Exhibition (DATE), 2015, 2015
Physical Unclonable Functions are emerging cryptographic primitives used to implement low-cost device authentication and secure secret key generation. In this paper we propose an innovative design based on STT-MRAM memory. We exploit the high variability affecting the electrical resistance of the MTJ device in anti-parallel magnetization.
Vatajelu, Elena Ioana, Di Natale, Giorgio, Indaco, Marco, Prinetto, Paolo   +3 more
openaire   +4 more sources