Results 51 to 60 of about 5,091 (240)

Ferroelectric Devices for In‐Memory and In‐Sensor Computing

Advanced Science, EarlyView.
Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang, Ronghuan Xie, Qiang Cao, Shishen Yan, Xiaolin Wang, Limei Zheng   +5 more
wiley   +1 more source

Advances and Perspectives in Graphene‐Based Quantum Dots Enabled Neuromorphic Devices

Advanced Science, EarlyView.
Graphene‐based QDs are zero‐dimensional carbon nanomaterials with pronounced quantum confinement and tunable electronic structures. Herein, we summarize their synthesis strategies and functionalization methods, and highlight their functional roles and operating mechanisms in devices, as well as recent advances in neuromorphic electronics. We anticipate
Yulin Zhen, Wei Zeng, Zherui Zhao, JiYu Zhao, Ziyan Huang, Zhuo Chen, Kui Zhou, Guanglong Ding, Su‐Ting Han, Ye Zhou   +9 more
wiley   +1 more source

Multiple state sensing schemes for MRAM cell and MRAM characterization [PDF]

, 1999
There are many types of storage technologies in use today, like dynamic RAMs, static RAMs and floating gate type memories (EEPROM, EPROM, flash, etc.). Magneto-resistive RAM or MRAM for short, is a fairly newer storage technology that offers advantages ...
Zhang, Ruili
core  

Enabling high-performance LPDDRx-compatible MRAM

, 2014
DRAM consumes a significant amount of energy in mobile computing devices today. Emerging non-volatile memory such as magnetoresistive memory (MRAM) offers a DRAM alternative and can potentially lead to a more energy-efficient memory system.
Xiangyu Dong, Wang, Jue, Dong, Xiangyu, Yuan Xie, Xie, Yuan, Jue Wang   +5 more
core   +1 more source

Programmable Topological Magnetic Textures in Above‐Room‐Temperature 2D Ferromagnet Fe3GaTe2

Advanced Science, EarlyView.
This work demonstrates the programmable generation and deterministic modulation of magnetic skyrmion bags with high‐order topological numbers in the above‐room‐temperature 2D ferromagnet Fe3GaTe2 (FGaT) via current‐pulse control. Furthermore, highly efficient electrical manipulation and current‐driven parallel motion of these high‐order topological ...
Hanqing Shi, Yilian Xi, Jingwei Zhang, Jiaqi Liu, Zhizhen Ren, Shilei Zhang, Weichang Hao, Haifeng Feng, Yi Du   +8 more
wiley   +1 more source

Toggle Spin-Orbit Torque MRAM With Perpendicular Magnetic Anisotropy

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2019
Spin-orbit torque (SOT) is a promising switching mechanism for magnetic random-access memory (MRAM) as a result of the potential for improved switching speed and energy efficiency.
Naimul Hassan, Susana P. Lainez-Garcia, Felipe Garcia-Sanchez, Joseph S. Friedman   +3 more
doaj   +1 more source

Van der Waals Heterostructures for Next‐Generation Spintronics: Multiferroic‐Mediated Magnetoelectric Properties

Advanced Science, EarlyView.
As CMOS technology approaches fundamental energy limits, new paradigms for low‐power information processing are required. Magnetic systems are attractive for their spin transport, yet current‐induced magnetization control is energy inefficient. Multiferroic heterostructures enable energy‐efficient electric field manipulation of magnetism.
Donghyeon Lee, Jiwoong Yang, Inhyeok Oh, Sanghan Lee   +3 more
wiley   +1 more source

Triple‐Level Content‐Addressable Vertical NAND Flash Memory

Advanced Science, EarlyView.
Commercial triple‐level‐cell V‐NAND flash memory is transformed into a compact content‐addressable memory by directly exploiting its eight threshold‐voltage states. A parity‐split search scheme preserves storage density while enabling reliable multi‐level and don't‐care matching. Parallel word‐line search delivers up to 24‐fold higher throughput and 54.
Sung‐Ho Park, Jiseong Im, Yeongheon Yang, Ryun‐Han Koo, Jonghyun Ko, Mingyun Oh, Dongbeen Shin, Gyuweon Jung, Jong‐Ho Lee   +8 more
wiley   +1 more source

Write Disturbance Modeling and Testing for MRAM

, 2009
[[abstract]]© 2008 Institute of Electrical and Electronics Engineers - The magnetic random access memory (MRAM) is considered one of the potential candidates that will replace current on-chip memories (RAM, EEPROM, and flash memory) in the future.
Chin-Lung Su;Chih-Wea Tsai;Cheng-Wen Wu;Chien-Chung Hung;Young-Shying Chen;Ding-Yeong Wang;Yuan-Jen Lee;Ming-Jer Kao
core   +1 more source

Nickel Intercalation in Epitaxial Graphene on SiC(0001): A Novel Platform for Engineering Two‐Dimensional Heterostructures

Advanced Science, EarlyView.
Ni‐intercalated graphene on SiC is achieved through a scalable colloidal nanoparticle deposition route. 2D heterostructures show preserved graphene band structure, stable under ambient conditions, and robust interfacial magnetism. Intercalated 2D Ni represents a promising candidate for next‐generation spintronic devices and is a scalable pathway to ...
Ylea Vlamidis, Stiven Forti, Antonio Rossi, Arrigo Calzolari, Carmela Marinelli, Camilla Coletti, Stefan Heun, Stefano Veronesi   +7 more
wiley   +1 more source