Results 61 to 70 of about 5,284 (228)
A Dual‐Programmable 2M NOR Flash Architecture for Energy‐Efficient In‐Memory Computing
Advanced Science, EarlyView.In conventional NOR Flash, the access transistor occupies area but stores no information. Here, it is repurposed as a programmable second memory device that plays two functional roles: an analog memory element that lowers the minimum read current from 72.7 nA to 4.22 pA, and a current‐path gating element enabling true‐off pruning and current‐range ...
Suhan Kim +4 more
wiley +1 more source
Testing MRAM for Write Disturbance Fault
, 2009 [[abstract]]© 2006 Institute of Electrical and Electronics Engineers -The magnetic random access memory (MRAM) is considered one of the potential candidates that will replace current on-chip memories (RAM, EEPROM, and flash memory) in the future.
Chin-Lung Su;Chih-Wea Tsai;Cheng-Wen Wu;Chien-Chung Hung;Young-Shying Chen;Ming-Jer Kao
core +1 more source
IEEE AccessTo build Neural Networks (NNs) on edge devices, Binarized Neural Network (BNN) has been proposed on the software side, while Computing-in-Memory (CiM) architecture has been proposed on the hardware side.
Yuya Fujiwara, Takayuki Kawahara
doaj +1 more source
Advanced Electronic Materials, EarlyView.In this work, low‐resolution infrared imaging is combined with a 28 nm FeFET IMC architecture to enable compact, energy‐efficient edge inference. MLC FeFET devices are experimentally characterized, and controlled multi‐level current accumulation is validated at crossbar array level.
Alptekin Vardar +9 more
wiley +1 more source
, 2019 MRAM (Magneto-resistive random-access memory), czyli typ nieulotnej pamięci operacyjnej o swobodnym dostępie, wykorzystującej zjawisko gigantycznego magnetooporu lub tunelowy efekt magnetorezystancyjny.
Jasica, Gabriela
core
Complementary Polarizer SOT-MRAM for Low-Power and Robust On-Chip Memory Applications
Complementary polarized spin-transfer torque magnetic random-access memory (CPSTT-MRAM) has been proposed to address the sensing reliability issues caused by the single-ended sensing of STT-MRAM.
Kon-Woo Kwon, Yeongkyo Seo, Hyerim Kim
core +1 more source
Silicon Nitride Resistive Memories
Advanced Electronic Materials, EarlyView.Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis +7 more
wiley +1 more source
Stochastic‐MTJ Sampler Arrays for In‐Array Monte–Carlo Estimation
Advanced Electronic Materials, EarlyView.A low‐energy‐barrier magnetic tunnel junction array is operated as a probability‐domain sampler: each cell's random switching, programmed through a shared digital‐to‐analog converter, makes the per‐column multiply–accumulate an unbiased Monte–Carlo expectation estimator that returns both a mean and a calibrated uncertainty.
Ran Zhang +6 more
wiley +1 more source
, 2003 对MTJ (磁隧道结）的GMR（巨磁阻）效应进行了分析。MTJ的结构、形态和工作条件会对GMR效应产生不同的影响。提出了一种4×1位MTJ MRAM（磁存储器）的电路结构，每个MRAM的存储单元由一个MTJ和一个MOSFET构成，用MTJ两磁极磁化方向的相对取向表示所存储的数据 ...
刘忠立, 尚也淳
core
Offset Field Control for VCMA-MRAM
, 2023 This work was supported by IMEC's Industrial Affiliation Program on STT-MRAM ...
Couet, Sebastien +16 more
core +1 more source