Results 61 to 70 of about 1,191 (183)
Exploiting Ferroelectric and Spintronic Dynamics for Neural Network Computation
Ferroelectric and spintronic devices, relying on the control of polarization and magnetization, offer intrinsically fast, durable, energy‐efficient, and low‐latency building blocks for analog in‐memory computing. The hysteretic dynamics of an order parameter are leveraged to provide nonvolatile, multistate memory and nonlinear switching. Brain‐inspired
Dashiell Harrison +4 more
wiley +1 more source
Low‐dimensional materials (0D, 1D, and 2D) exhibit unique electronic and physicochemical properties, enabling advanced nanoelectronic and optoelectronic devices. Mixed‐dimensional heterostructures combine these materials to enhance functionality.
Qaisar Alam +3 more
wiley +1 more source
To build Neural Networks (NNs) on edge devices, Binarized Neural Network (BNN) has been proposed on the software side, while Computing-in-Memory (CiM) architecture has been proposed on the hardware side.
Yuya Fujiwara, Takayuki Kawahara
doaj +1 more source
2D Magnetic and Topological Quantum Materials and Devices for Ultralow Power Spintronics
2D magnets and topological quantum materials enable ultralow‐power spintronics by combining robust magnetic order with symmetry‐protected, Berry‐curvature‐driven transport. Fundamentals of 2D anisotropy and spin‐orbit‐coupling induced band inversion are linked to scalable growth and vdW stacking.
Brahmdutta Dixit +5 more
wiley +1 more source
Low‐power ferroelectric capacitors, based on superlattice HfO2‐ZrO2 is reported. With proper tuning of ferro and antiferroelectricity, an imprint‐free high switchable polarization charge (2Pr of 76 µC/cm2) is obtained with 2MV/cm leading to linear analog weight update and non‐volatile retention, providing a design guideline for emerging non‐volatile ...
Xinye Li +4 more
wiley +1 more source
Spintronics and magnetic memory devices
Spintronics technology enables electrical reading and writing of magnetization orders, thus have led to development of magnetic random access memory (MRAM).
Gyung-Min Choi +6 more
doaj +1 more source
Nonlinear Strain‐Mediated Magnetoelectric Coupling in Sub‐Microscale Ni/BPZT Thin‐Film Devices
Sub‐micrometer Ni/BPZT thin‐film magnetoelectric devices with lateral gates enable localized, low‐voltage strain control of magnetization. By combining anisotropic magnetoresistance, nitrogen‐vacancy magnetometry, multiphysics strain simulations, and micromagnetic modelling, the study quantitatively links ferroelectric strain hysteresis to magnetic ...
Fanfan Meng +8 more
wiley +1 more source
The Progress of Orbitronics: The Enhancement of Orbital Torque Efficiency
Orbit‐torque (OT) devices attract significant attention for their low‐power consumption and high stability in applications. This review systematically outlines strategies for enhancing OT efficiency. We categorize approaches into boosting orbital currents/torques and improving the orbital‐to‐spin conversion coefficient.
Pengfei Liu +6 more
wiley +1 more source
Lead‐free inorganic halide perovskites enable resistive switching synaptic devices capable of mimicking biological learning and multimodal information processing, offering a promising platform for next‐generation neuromorphic computing and artificial intelligence hardware. Abstract Inorganic halide perovskites (IHPs) have emerged as promising materials
Subhasish Chanda +7 more
wiley +1 more source
Sustainable Livestock Decisions in a Post‐Conflict Frontier: Evidence From Colombia's Orinoquía
ABSTRACT The Orinoquía region is one of Colombia's principal agricultural frontiers and has been shaped by long‐standing armed‐conflict dynamics that continue to influence land governance, producer incentives, and investment decisions. Efforts to promote sustainable cattle production emphasize two key practices: sustainable pasture management ...
Hernando Flórez‐Díaz +4 more
wiley +1 more source

