Results 61 to 70 of about 5,091 (240)
Design, Automation & Test in Europe Conference & Exhibition (DATE), 2015, 2015 Physical Unclonable Functions are emerging cryptographic primitives used to implement low-cost device authentication and secure secret key generation. In this paper we propose an innovative design based on STT-MRAM memory. We exploit the high variability affecting the electrical resistance of the MTJ device in anti-parallel magnetization.
Vatajelu, Elena Ioana +3 more
openaire +4 more sources
, 2013 Magnetoresistive Random Access Memory (MRAM) is much different from conventional types of memory like SRAM, DRAM, and Flash, where electric charge is used to store information.
Heidecker, Jason
core
System level exploration of a STT-MRAM based level 1 data-cache
, 2015 Since Non-Volatile Memory (NVM) technologies are being explored extensively nowadays as viable replacements for SRAM based memories in LLCs and even L2 caches, we try to take stock of their potential as level 1 (L1) data caches.
Gómez Pérez, José Ignacio +4 more
core +1 more source
Correlation between 1064 nm laser attack and thermal behavior in STT-MRAM
, 2023 International audienceIn this paper, the impact of a 1064 nm laser attack on an STT-MRAM cell is experimentally studied in real-time, for the first time, during reading and writing operations, in order to understand the behavior of a sensing circuit ...
J. Postel-Pellerin +11 more
core +1 more source
Assessing the logistics industry efficiency with a modified range adjusted measure
Scientific ReportsHow to accurately assess logistics industry efficiency to identify production issues and provide support for optimizing logistics efficiency has become a current research challenge. Range adjust measure (RAM) is a method for efficiency assessment in data
Chongyu Ma, Jianwei Ren, Chunhua Chen
doaj +1 more source
A Dual‐Programmable 2M NOR Flash Architecture for Energy‐Efficient In‐Memory Computing
Advanced Science, EarlyView.In conventional NOR Flash, the access transistor occupies area but stores no information. Here, it is repurposed as a programmable second memory device that plays two functional roles: an analog memory element that lowers the minimum read current from 72.7 nA to 4.22 pA, and a current‐path gating element enabling true‐off pruning and current‐range ...
Suhan Kim +4 more
wiley +1 more source
WiSE : When Learning Assists Resolving STT-MRAM Efficiency Challenges
, 2023 Spin Transfer Torque Magnetic RAM (STT-MRAM) is one of the most promising on-chip technologies, which delivers high density, non-volatility, and near-zero leakage power.
Beitollahi, Hakem, +5 more
core +1 more source
Advanced Electronic Materials, EarlyView.In this work, low‐resolution infrared imaging is combined with a 28 nm FeFET IMC architecture to enable compact, energy‐efficient edge inference. MLC FeFET devices are experimentally characterized, and controlled multi‐level current accumulation is validated at crossbar array level.
Alptekin Vardar +9 more
wiley +1 more source
Reliability of 4-Mbit Toggle MRAM
, 2004 A 4Mb magnetoresistive random access memory (MRAM) with a novel magnetic free layer and toggle switching mode is presented. The new free layer uses a balanced synthetic-antiferromagnet trilayer structure and a novel write pulse sequence to provide robust
Johan Åkerman +18 more
core +2 more sources
IEEE AccessTo build Neural Networks (NNs) on edge devices, Binarized Neural Network (BNN) has been proposed on the software side, while Computing-in-Memory (CiM) architecture has been proposed on the hardware side.
Yuya Fujiwara, Takayuki Kawahara
doaj +1 more source