Results 71 to 80 of about 5,284 (228)
Macro model and sense amplifier for a MRAM
, 2017 For the simulation of the architecture for a magnetoresistive random access memory (MRAM) based on GMR (giant magnetoresistance) and a MTJ (magnetic tunnel junction) cell having a hysteretic characteristics, a macro model showing this hysteresis is ...
신형순
core +1 more source
Spintronics and magnetic memory devices
Advances in Physics: XSpintronics technology enables electrical reading and writing of magnetization orders, thus have led to development of magnetic random access memory (MRAM).
Gyung-Min Choi +6 more
doaj +1 more source
Advanced Electronic Materials, EarlyView.The amorphous tungsten (W) is found to be a promising non‐magnetic interlayer simultaneously driving the long‐range interlayer exchange coupling and the large spin Hall effect in a synthetic antiferromagnet (SyAF). Thanks to these characteristics, efficient spin‐orbit torque switching is achieved in the SyAF.
Xueyao Hou +9 more
wiley +1 more source
Automatic Regression Framework for MRAM Compact Models Calibration including Stochasticity [PDF]
This paper introduces a comprehensive optimization framework designed to enhance the regression of physical parameters for MRAM technologies, including STT-MRAM, VCMA, and SOT devices.
Bardon, Marie Garcia +3 more
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Exploiting Ferroelectric and Spintronic Dynamics for Neural Network Computation
Advanced Intelligent Systems, EarlyView.Ferroelectric and spintronic devices, relying on the control of polarization and magnetization, offer intrinsically fast, durable, energy‐efficient, and low‐latency building blocks for analog in‐memory computing. The hysteretic dynamics of an order parameter are leveraged to provide nonvolatile, multistate memory and nonlinear switching. Brain‐inspired
Dashiell Harrison +4 more
wiley +1 more source
A Novel Self-Reference Sensing Scheme for MLC MRAM [PDF]
, 2017 Magnetic random access memory (MRAM) is a promising nonvolatile memory technology targeted on on-chip or embedded applications. Storage density is one of the major design concerns of MRAM.
Li, Zheng
core
Write Disturbance Modeling and Testing for MRAM
, 2009 [[abstract]]© 2008 Institute of Electrical and Electronics Engineers - The magnetic random access memory (MRAM) is considered one of the potential candidates that will replace current on-chip memories (RAM, EEPROM, and flash memory) in the future.
Chin-Lung Su;Chih-Wea Tsai;Cheng-Wen Wu;Chien-Chung Hung;Young-Shying Chen;Ding-Yeong Wang;Yuan-Jen Lee;Ming-Jer Kao
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WiSE : When Learning Assists Resolving STT-MRAM Efficiency Challenges
, 2023 Spin Transfer Torque Magnetic RAM (STT-MRAM) is one of the most promising on-chip technologies, which delivers high density, non-volatility, and near-zero leakage power.
Beitollahi, Hakem, +5 more
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Decoupled Spin Hall Voltage Readout for Domain‐Wall Synapses in Embedded Neuromorphic Computing
Advanced Intelligent Systems, EarlyView.Magnetic domain‐wall synapses provide nonvolatile multilevel states with linear, symmetric weight updates, making them attractive for neuromorphic hardware. However, DW MTJ readout has magnetoresistance‐limited dynamic range, while anomalous‐Hall readout suffers from weak voltage output and read/write coupling.
Stanislav Sin +2 more
wiley +1 more source
IEEE Journal of the Electron Devices SocietyMagnetoresistive memory has matured into a commercially viable technology, with current-controlled spin-transfer torque (STT) MRAM serving as an industry standard for spintronics due to its good performance metrics and compatibility with silicon ...
Stanislav Sin, Saeroonter Oh
doaj +1 more source