Results 71 to 80 of about 1,191 (183)
Current-induced magnetization switching through spin–orbit torque (SOT) enables low-energy and high-speed switching of magnetic memory (MRAM), positioning SOT-MRAM as a promising candidate for next-generation memory technology.
Ji-won Yoon +5 more
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Noises exist in digital circuits can be leveraged as the source of entropy to design true random numbers generators (TRNGs), which is an important primitive component in cryptography and hardware-based security applications.
Frederic Ouattara +3 more
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Spin‐orbit torque‐driven magnetic random‐access memory (SOT‐MRAM) is one of the promising candidates for next‐generation memory technologies beyond Moore's law.
Xu Zhang +18 more
doaj +1 more source
Novel CPU cache architecture based on two-dimensional MTJ device with ferromagnetic Fe3GeTe2
With the development of Artificial Intelligence (AI) in recent years, the fields of computer, biology, medicine, and aerospace have demanded higher requirements for the processing and storage of information.
Shaopu Han, Yanfeng Jiang
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This article presents the results of a 10-year research study on the possibilities of implementing circular economy principles into the recovery of construction waste in road construction and paving traffic areas.
Martin Decký +2 more
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Optimization of the 3D multi-level SOT-MRAMs
With the development of electronic technology, semiconductor memory is gradually shifting toward smaller area with less power consumption. SOT-MRAM is one of the competitive substitutes for DRAM and SRAM due to its superior endurance and switching speed.
Hui Lin, Yanfeng Jiang
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Design of a full 1Mb STT-MRAM based on advanced FDSOI technology
In one hand, the shrinking of CMOS technology nodes is dramatically increasing the leakage current in integrated circuits. In the other hand, modern portable devices first concern is power-efficiency to insure a better autonomy.
Jabeur Kotb, Prenat Guillaume
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MODELING OF MTJ AND ITS VALIDATION USING NANOSCALE MRAM BITCELL [PDF]
Magnetic Tunnel Junction (MTJ) is a promising candidate for nonvolatile and low power memory design. MTJ is basic building block of STT-MRAM bitcell.
CHANDRAMAULESHWAR ROY +2 more
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Field-free spin–orbit torque devices for logic and neural network applications
Robust field-free spin–orbit torque (SOT) switching plays an essential role in realizing practical SOT-based magnetic memories and logic devices. Leveraging the strong interlayer Dzyaloshinskii–Moriya interaction, field-free SOT switching is achieved ...
Chun-Yi Lin +4 more
doaj +1 more source
Multi-bit MRAM based high performance neuromorphic accelerator for image classification
Binary neural networks (BNNs) are the most efficient solution to bridge the design gap of the hardware implementation of neural networks in a resource-constrained environment.
Gaurav Verma +3 more
doaj +1 more source

