Results 71 to 80 of about 4,033 (229)
Advanced Science, EarlyView.The human brain's imagination, which enables autonomous driving hazard avoidance by completing missing visual information, relies on Gaussian‐stochastic neuron. We report the altermagnetic RuO2 spintronic neurons integrating field‐free switching and intrinsic Gaussian stochasticity, building an all‐spin ANN for high‐quality image repairing and high ...
Junwei Zeng +9 more
wiley +1 more source
Automated characterization of TAS-MRAM test arrays [PDF]
, 2015 In this work the characterization results of 1kbit TAS-MRAM arrays obtained through RIFLE Automated Test Equipment of 1Kbit array are reported. Such ATE, ensuring flexibility in terms of signals and timing, allowed evaluating hysteresis and to perform ...
Cristian Zambelli +13 more
core +1 more source
Advanced Science, EarlyView.Rational engineering of terminal substituents in symmetric azobenzene‐based molecules enables precise control over conformationally coupled charge‐transfer processes. This design yields tunable nonvolatile resistive memory behaviors, ranging from write‐once‐read‐many‐times (WORM) to rewritable switching.
Yanze Liu +11 more
wiley +1 more source
Diagnosis of MRAM write disturbance fault [PDF]
, 2014 [[abstract]]In this paper, we propose a new test method to detect write disturbance fault (WDF) for magnetic RAM (MRAM). Furthermore, an adaptive diagnosis algorithm (ADA) is also introduced to identify and diagnose the WDF for MRAM.
C.-L. Su;C.-W. Tsai;C.-Y. Chen;W.-Y. Lo;C.-W. Wu;J.-J. Chen;W.-C. Wu;C.-C. Hung;M.-J. Kao
core +1 more source
Advanced Electronic Materials, EarlyView.In this work, low‐resolution infrared imaging is combined with a 28 nm FeFET IMC architecture to enable compact, energy‐efficient edge inference. MLC FeFET devices are experimentally characterized, and controlled multi‐level current accumulation is validated at crossbar array level.
Alptekin Vardar +9 more
wiley +1 more source
Testing MRAM for Write Disturbance Fault [PDF]
, 2009 [[abstract]]© 2006 Institute of Electrical and Electronics Engineers -The magnetic random access memory (MRAM) is considered one of the potential candidates that will replace current on-chip memories (RAM, EEPROM, and flash memory) in the future.
Chin-Lung Su;Chih-Wea Tsai;Cheng-Wen Wu;Chien-Chung Hung;Young-Shying Chen;Ming-Jer Kao
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Silicon Nitride Resistive Memories
Advanced Electronic Materials, EarlyView.Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis +7 more
wiley +1 more source
Analysis of MRAM applications [PDF]
, 2002 Thesis (M.Eng.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2002.Includes bibliographical references (p. 45-47).Magnetic Random Access Memory (MRAM) is considered to be the most viable option for nonvolatile memory
Hernandez, Allison, 1979-
core
IEEE AccessTo build Neural Networks (NNs) on edge devices, Binarized Neural Network (BNN) has been proposed on the software side, while Computing-in-Memory (CiM) architecture has been proposed on the hardware side.
Yuya Fujiwara, Takayuki Kawahara
doaj +1 more source
Advanced Electronic Materials, EarlyView.Point defects strongly influence the spin‐dependent electronic and transport properties of Co2HfSn and Co2ZrSn Heusler alloys. First‐principles calculations reveal that Co vacancies preserve half‐metallicity, while anti‐site and swap defects introduce minority‐spin states that reduce spin selectivity.
Alessandro Difalco +5 more
wiley +1 more source