Results 71 to 80 of about 5,091 (240)

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

Pamięć MRAM

, 2019
MRAM (Magneto-resistive random-access memory), czyli typ nieulotnej pamięci operacyjnej o swobodnym dostępie, wykorzystującej zjawisko gigantycznego magnetooporu lub tunelowy efekt magnetorezystancyjny.
Jasica, Gabriela
core  

Stochastic‐MTJ Sampler Arrays for In‐Array Monte–Carlo Estimation

Advanced Electronic Materials, EarlyView.
A low‐energy‐barrier magnetic tunnel junction array is operated as a probability‐domain sampler: each cell's random switching, programmed through a shared digital‐to‐analog converter, makes the per‐column multiply–accumulate an unbiased Monte–Carlo expectation estimator that returns both a mean and a calibrated uncertainty.
Ran Zhang, Nellie Laleni, Sina Ranjbar, Andreas Tsiougkos, Nandakishor Yadav, Vasilis Pavlidis, Thomas Kämpfe   +6 more
wiley   +1 more source

Environmental Effects on RRAM Cells Based on 2D Halide Perovskite Materials

Advanced Electronic Materials, EarlyView.
RRAM offers high speed, scalability, and low power, positioning it as a next‐generation non‐volatile memory. Two‐dimensional halide perovskites show promise due to tunable optoelectronic properties and flexible processing but suffer from environmental sensitivity. This review examines degradation from humidity, temperature, light, and strain, discusses
Mojtaba Joodaki, Babitha Arun, Hartmut Hillmer, Chih‐Chieh Hsu   +3 more
wiley   +1 more source

Spintronics and magnetic memory devices

Advances in Physics: X
Spintronics technology enables electrical reading and writing of magnetization orders, thus have led to development of magnetic random access memory (MRAM).
Gyung-Min Choi, OukJae Lee, Sunjae Chung, Woojin Kim, Taeyoung Lee, Byong-Guk Park, Seungmo Yang   +6 more
doaj   +1 more source

Reconfigurable Ternary Logic‐In‐Memory With Organic Antiambipolar Transistor

Advanced Electronic Materials, EarlyView.
We develop a ternary logic‐in‐memory with an organic antiambipolar transistor combining a ternary inverter and ternary nonvolatile memory in the same circuit. The memory function of the circuit enables electrical reconfiguration to obtain standard, negative, and positive ternary inverters in the same device.
Ryoma Hayakawa, Taiga Kijima, Yuho Yamamoto, Yoichi Yamada, Yutaka Wakayama   +4 more
wiley   +1 more source

Impact of Resistive-Bridge Defects in TAS-MRAM Architectures

, 2012
International audienceMagnetic Random Access Memory (MRAM) is an emerging memory technology. Among existing MRAM technologies, the Thermally Assisted Switching (TAS) MRAM technology offers several advantages such as selectivity, single magnetic field and
P. Girard, Alvarez-Hérault, Jérémy, J. Alvarez-Herault, A. Bosio, K. Mackay, G. Prenat, Mackay, Ken, Azevedo, João, Virazel, Arnaud, Girard, Patrick, Bosio, Alberto, A. Todri, Dilillo, Luigi, L. Dilillo, Todri-Sanial, Aida, J. Azevedo, A. Virazel   +16 more
core   +1 more source

Amorphous Tungsten Driving Extraordinary Long‐Range Interlayer Exchange Coupling and Large Spin‐Orbit Torque

Advanced Electronic Materials, EarlyView.
The amorphous tungsten (W) is found to be a promising non‐magnetic interlayer simultaneously driving the long‐range interlayer exchange coupling and the large spin Hall effect in a synthetic antiferromagnet (SyAF). Thanks to these characteristics, efficient spin‐orbit torque switching is achieved in the SyAF.
Xueyao Hou, Keita Ito, Varun K. Kushwaha, Takumi Yamazaki, Junwei Gu, Zhenchao Wen, Keisuke Masuda, Jun Okabayashi, Shoya Sakamoto, Takeshi Seki   +9 more
wiley   +1 more source

MTJ MRAM的特性分析与设计

, 2003
对MTJ (磁隧道结）的GMR（巨磁阻）效应进行了分析。MTJ的结构、形态和工作条件会对GMR效应产生不同的影响。提出了一种4×1位MTJ MRAM（磁存储器）的电路结构，每个MRAM的存储单元由一个MTJ和一个MOSFET构成，用MTJ两磁极磁化方向的相对取向表示所存储的数据 ...
刘忠立, 尚也淳
core  

Toward Capacitive In‐Memory‐Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware

Advanced Intelligent Discovery, EarlyView.
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj, Ella Paasio, Sayani Majumdar   +2 more
wiley   +1 more source