Results 91 to 100 of about 5,284 (228)

Recent Developments in Spin Transfer Torque MRAM

, 2017
Spin transfer torque (STT) switching‐based magnetic random access memory (MRAM) is gaining significant industrial and academic attention due to its potential application as a non‐volatile memory device in computing devices, smartphones, and so on.
S. N. Piramanayagam, Piramanayagam, S. N., Sbiaa, Rachid, Rachid Sbiaa   +3 more
core   +1 more source

Altermagnetismus und neue Chancen für die Spintronik: Das Beste aus zwei Welten

Physik in unserer Zeit, EarlyView.
Sie gelten als die Zukunft der Spintronik: Altermagnete kombinieren die Vorzüge von Ferro‐ und Antiferromagneten, was lange Zeit als physikalisch unvereinbar galt. Der Grund für dieses Potential liegt in ihrer spezifischen Symmetrie. Zusammenfassung Klassisch werden magnetische Materialien in Ferromagnete (parallele Spins) und Antiferromagnete ...
Sonka Reimers, Martin Jourdan, Mathias Kläui   +2 more
wiley   +1 more source

Domain‐Wall Circulation Gating and Pinning via Compositional Engineering of Cylindrical Nanowires

Small, EarlyView.
Cylindrical magnetic nanowires offer a promising platform for future three‐dimensional spintronic devices. By strategically engineering nanometer‐scale chemical modulations, a novel circulation gate is established to control domain wall propagation.
Laura Álvaro‐Gómez, Claudia Fernández‐González, Sandra Ruiz‐Gómez, Nicolas Mille, Jean Christophe Toussaint, Rachid Belkhou, Michael Foerster, Eva Pereiro, Lucía Aballe, Núria Bagués, Christophe Thirion, Daria Gusakova, Aurelien Masseboeuf, Olivier Fruchart, Lucas Pérez   +14 more
wiley   +1 more source

Embedded systems to high performance computing using STT-MRAM

, 2017
International audienceThe scaling limits of CMOS have pushed many researchers to explore alternative technologies for beyond CMOS circuits. In addition to the increased device variability and process complexity led by the continuous decreasing size of ...
Coi, Odilia, Delobelle, Thibaud, Sophiane Senni, Thibaud Delobelle, Benoit, Pascal, Pierre-Yves Peneau, Gilles Sassatelli, Torres, Lionel, Sassatelli, Gilles, Péneau, Pierre-Yves, Lionel Torres, Senni, Sophiane, Abdoulaye Gamatie, Odilia Coi, Pascal Benoit, Gamatié, Abdoulaye   +15 more
core   +1 more source

On‐Chip Learning With Crossbar Arrays for Adaptive Edge Intelligence

Advanced Computing, Volume 1, Issue 1, December 2026.
Memristor crossbar arrays implemented on chip combines memory, computation, and learning. They allow for adapting the neural weights using the incoming sensor data. This architecture reduces data movement leading to low‐latency, energy‐efficient intelligence in edge while being reliability‐aware co‐design across devices, circuits, and algorithms that ...
Alex James
wiley   +1 more source

Ultralow Electrical Current Driven Field‐Free Spin‐Orbit Torque Switching of Magnetic Tunnel Junctions by Topological Insulators

Advanced Electronic Materials
Spin‐orbit torque‐driven magnetic random‐access memory (SOT‐MRAM) is one of the promising candidates for next‐generation memory technologies beyond Moore's law.
Xu Zhang, Aitian Chen, Yifan Zhang, Zhaozhuo Zeng, Yaqin Guo, Dongxing Zheng, Baoshan Cui, Chuangwen Wu, Wenjie Song, Shuo Yang, Zijun Luo, Jingfeng Li, Gianluca Gubbiotti, Xiufeng Han, Jinkui Zhao, Peng Yan, Xufeng Kou, Xixiang Zhang, Hao Wu   +18 more
doaj   +1 more source

Practical Experiments on Fabricated TAS-MRAM Dies to Evaluate the Stochastic Behavior of Voltage-Controlled TRNGs

IEEE Access, 2019
Noises exist in digital circuits can be leveraged as the source of entropy to design true random numbers generators (TRNGs), which is an important primitive component in cryptography and hardware-based security applications.
Frederic Ouattara, Arash Nejat, Lionel Torres, Ken Mackay   +3 more
doaj   +1 more source

Triple‐Level Content‐Addressable Vertical NAND Flash Memory

Advanced Science, Volume 13, Issue 61, 3 November 2026.
Commercial triple‐level‐cell V‐NAND flash memory is transformed into a compact content‐addressable memory by directly exploiting its eight threshold‐voltage states. A parity‐split search scheme preserves storage density while enabling reliable multi‐level and don't‐care matching. Parallel word‐line search delivers up to 24‐fold higher throughput and 54.
Sung‐Ho Park, Jiseong Im, Yeongheon Yang, Ryun‐Han Koo, Jonghyun Ko, Mingyun Oh, Dongbeen Shin, Gyuweon Jung, Jong‐Ho Lee   +8 more
wiley   +1 more source

Novel CPU cache architecture based on two-dimensional MTJ device with ferromagnetic Fe3GeTe2

AIP Advances
With the development of Artificial Intelligence (AI) in recent years, the fields of computer, biology, medicine, and aerospace have demanded higher requirements for the processing and storage of information.
Shaopu Han, Yanfeng Jiang
doaj   +1 more source

A Comparative Analysis on the Impact of Bank Contention in STT-MRAM and SRAM Based LLCs

, 2019
Spin Transfer Torque Magnetic RAM (STT-MRAM) is being extensively considered as a promising replacement for Last Level Caches (LLC), due to its high density, low leakage and non-volatility. However, writes to STT-MRAM are energy intensive and have a high
Christian Tenllado, Sushil Sakhare, Bueno Mora, Nicolás, Manu Perumkunnil, Furnemont, Arnaud, Nicolas Bueno, Tenllado Van Der Reijden, Christian Tomás, Komalan, Manu Perumkunnil, Peter Debacker, Sakhare, Sushil, Evenblij, Timmon, Catthoor, Franky, Gouri Kar, Arnaud Furnemont, Kar, Gouri, Gómez Pérez, José Ignacio, Jose Ignacio Gomez-Perez, Timon Evenblij, Francky Catthoor, Debacker, Peter   +19 more
core   +1 more source