Results 91 to 100 of about 5,091 (240)

Recent Developments in Spin Transfer Torque MRAM

, 2017
Spin transfer torque (STT) switching‐based magnetic random access memory (MRAM) is gaining significant industrial and academic attention due to its potential application as a non‐volatile memory device in computing devices, smartphones, and so on.
S. N. Piramanayagam, Piramanayagam, S. N., Sbiaa, Rachid, Rachid Sbiaa   +3 more
core   +1 more source

Ultralow Electrical Current Driven Field‐Free Spin‐Orbit Torque Switching of Magnetic Tunnel Junctions by Topological Insulators

Advanced Electronic Materials
Spin‐orbit torque‐driven magnetic random‐access memory (SOT‐MRAM) is one of the promising candidates for next‐generation memory technologies beyond Moore's law.
Xu Zhang, Aitian Chen, Yifan Zhang, Zhaozhuo Zeng, Yaqin Guo, Dongxing Zheng, Baoshan Cui, Chuangwen Wu, Wenjie Song, Shuo Yang, Zijun Luo, Jingfeng Li, Gianluca Gubbiotti, Xiufeng Han, Jinkui Zhao, Peng Yan, Xufeng Kou, Xixiang Zhang, Hao Wu   +18 more
doaj   +1 more source

On‐Chip Learning With Crossbar Arrays for Adaptive Edge Intelligence

Advanced Computing, Volume 1, Issue 1, December 2026.
Memristor crossbar arrays implemented on chip combines memory, computation, and learning. They allow for adapting the neural weights using the incoming sensor data. This architecture reduces data movement leading to low‐latency, energy‐efficient intelligence in edge while being reliability‐aware co‐design across devices, circuits, and algorithms that ...
Alex James
wiley   +1 more source

Auxiliary Roles in STT-MRAM Memory [PDF]

, 2014
Computer memories now play a key role in our everyday life given the increase in the number of connected smart devices and wearables. Recently post-CMOS memory technologies are gaining significant research attention along with the regular ones.
Das, Jayita
core  

Novel CPU cache architecture based on two-dimensional MTJ device with ferromagnetic Fe3GeTe2

AIP Advances
With the development of Artificial Intelligence (AI) in recent years, the fields of computer, biology, medicine, and aerospace have demanded higher requirements for the processing and storage of information.
Shaopu Han, Yanfeng Jiang
doaj   +1 more source

Cascading Spin‐Orbitronic Terahertz Emission in Ferromagnet/Nonmagnet Bilayers

Advanced Optical Materials, Volume 14, Issue 34, 11 September 2026.
While the initial generation mechanism of picosecond orbital currents remains elusive, we reveal a cascading spin–orbital transport mechanism that induces optically driven terahertz emission in ferromagnet/nonmagnet heterostructures. Using a ferromagnet with strong spin–orbit coupling, we identify a thickness‐driven transition from spin‐dominated to ...
Younghun Kim, Pinki Yadav, Byungwoo Son, Jooyoung Heo, Sejin Shin, Do‐Kyeong Ko, Rahul Mishra, Kyusup Lee   +7 more
wiley   +1 more source

Practical Experiments on Fabricated TAS-MRAM Dies to Evaluate the Stochastic Behavior of Voltage-Controlled TRNGs

IEEE Access, 2019
Noises exist in digital circuits can be leveraged as the source of entropy to design true random numbers generators (TRNGs), which is an important primitive component in cryptography and hardware-based security applications.
Frederic Ouattara, Arash Nejat, Lionel Torres, Ken Mackay   +3 more
doaj   +1 more source

Molecularly Engineered Wing‐Shaped Azobenzene Memristors for Logic‐in‐Memory and Edge Visual Intelligence

Advanced Science, Volume 13, Issue 53, 24 September 2026.
Rational engineering of terminal substituents in symmetric azobenzene‐based molecules enables precise control over conformationally coupled charge‐transfer processes. This design yields tunable nonvolatile resistive memory behaviors, ranging from write‐once‐read‐many‐times (WORM) to rewritable switching.
Yanze Liu, Tao Han, Jiahui Ding, Hong Lian, Lingling Yao, Zhaoxin Xu, Xingyu Zhang, Shuanglong Wang, Jiangnan Xia, Tianchi Zhang, Weiwei Kang, Qingchen Dong   +11 more
wiley   +1 more source

Diagnosis of MRAM write disturbance fault

, 2014
[[abstract]]In this paper, we propose a new test method to detect write disturbance fault (WDF) for magnetic RAM (MRAM). Furthermore, an adaptive diagnosis algorithm (ADA) is also introduced to identify and diagnose the WDF for MRAM.
C.-L. Su;C.-W. Tsai;C.-Y. Chen;W.-Y. Lo;C.-W. Wu;J.-J. Chen;W.-C. Wu;C.-C. Hung;M.-J. Kao
core   +1 more source

Highly‐Uniform Passive Crossbar Arrays of Resistive Switching Random Access Memory (RRAM) for In‐Memory Computing Applications

Advanced Electronic Materials, Volume 12, Issue 18, 21 September 2026.
Passive resistive memory arrays promise efficient in‐memory computing but suffer from sneak paths and programming variability. Here, highly uniform 32 × 32 passive RRAM crossbars are programmed with multilevel precision below 3% error and 99.5% yield.
S. Ricci, P. Mannocci, M. Porzani, D. Bridarolli, F. Carletti, M. Farronato, D. Ielmini   +6 more
wiley   +1 more source