Results 91 to 100 of about 4,033 (229)

Secure Charactrization of Magnetic Memories MRAM [PDF]

, 2015
La MRAM est une technologie de mémoire non-volatile émergente, elle a la particularité de stocker les données sous forme d’orientations de moments magnétiques.
Sarno, Thomas
core  

Neuromorphic Hardware Materials for Intelligent Artificial Perception and Multimodal Fusion: From Sensing to Cognition

Interdisciplinary Materials, EarlyView.
Neuromorphic hardware enables the integration of sensing, memory, and computing for intelligent artificial perception. Recent advances in multimodal fusion further highlight its potential for embodied intelligence and next‐generation human–machine interfaces.
Yixin Zhu, Yuqing Hu, Changjin Wan, Qing Wan   +3 more
wiley   +1 more source

Energy efficiency analysis of spin–orbit torque MRAM using composition dependent resistivity and spin Hall angle in Pt/W multilayer structure

APL Materials
Current-induced magnetization switching through spin–orbit torque (SOT) enables low-energy and high-speed switching of magnetic memory (MRAM), positioning SOT-MRAM as a promising candidate for next-generation memory technology.
Ji-won Yoon, Hyun-jun Lee, Ji-Hyeon Yun, Si-yeol Lee, Sang Ho Lim, Seung-heon Chris Baek   +5 more
doaj   +1 more source

Nitrogen‐Doped GeTeS Ovonic Threshold Switching Selector With Optimized Performance Trade‐Off for 1S–1R Phase‐Change Memory

Small, EarlyView.
This study introduced a Ge‐Te‐S co‐sputtering process to resolve the performance trade‐off between GeTe and GeS in OTS selector devices, and improved device durability through nitrogen doping. Furthermore, in a 1S‐1R structure incorporating phase‐change memory devices, it simultaneously achieved excellent thermal stability, durability, high‐speed ...
Min Su Kang, Jong Min Joo, Jun Young Choi, Ji Eun Park, Dong Hyun Kim, Jin Suk Oh, Tae Geun Kim   +6 more
wiley   +1 more source

Auxiliary Roles in STT-MRAM Memory [PDF]

, 2014
Computer memories now play a key role in our everyday life given the increase in the number of connected smart devices and wearables. Recently post-CMOS memory technologies are gaining significant research attention along with the regular ones.
Das, Jayita
core   +1 more source

Variations in Stochastic Magnetic Tunnel Junctions

physica status solidi (a), Volume 223, Issue 14, 22 July 2026.
This work presents a reproducible fabrication method for nanoscale stochastic magnetic tunnel junctions (s‐MTJs) using undercut‐assisted e‐beam lithography, end‐point‐controlled etching, and in situ passivation. The study identifies key variation sources, such as static characteristic variations in TMR, resistance, coercive field, and loop shift ...
Ki Hyuk Han, YongJin Kim, Deok Hyun Yun, Jeoung Ung Ahn, Cheol Jun Kim, Young‐Jun Nah, Min‐Gu Kang, Seokmin Hong, Hyun Cheol Koo, OukJae Lee   +9 more
wiley   +1 more source

Quantitative evaluation of reliability and performance for STT-MRAM [PDF]

, 2016
International audienceDue to its non-volatility, high access speed, ultra low power consumption and unlimited writing/reading cycles, STT-MRAM (Spin Transfer Torque Magnetic Random Access Memory) has emerged as the most promising candidate for the next ...
Zhang, Youguang, Weisheng Zhao, Wang Kang, Torres, Lionel, Cheng, Yuanqing, Aida Todri-Sanial, Lionel Torres, Kang, Wang, Zhang, Liuyang, Liuyang Zhang, Youguang Zhang, Zhao, Weisheng, Todri-Sanial, Aida, Yuanqing Cheng   +13 more
core   +1 more source

Reliability and performance evaluation for STT-MRAM under temperature variation [PDF]

, 2016
International audienceSpin transfer torque magnetic random access memory (STT-MRAM) is a potential candidate for next generation universal memory technology, which possesses the high density and cost benefits of DRAM, the high access speed of SRAM, the ...
Zhang, Youguang, Weisheng Zhao, Wang Kang, Torres, Lionel, Cheng, Yuanqing, Lionel Torres, Aida Todri-Sanial, Kang, Wang, Zhang, Liuyang, Liuyang Zhang, Youguang Zhang, Zhao, Weisheng, Todri-Sanial, Aida, Yuanqing Cheng   +13 more
core   +1 more source

Practical Experiments on Fabricated TAS-MRAM Dies to Evaluate the Stochastic Behavior of Voltage-Controlled TRNGs

IEEE Access, 2019
Noises exist in digital circuits can be leveraged as the source of entropy to design true random numbers generators (TRNGs), which is an important primitive component in cryptography and hardware-based security applications.
Frederic Ouattara, Arash Nejat, Lionel Torres, Ken Mackay   +3 more
doaj   +1 more source

Ultralow Electrical Current Driven Field‐Free Spin‐Orbit Torque Switching of Magnetic Tunnel Junctions by Topological Insulators

Advanced Electronic Materials
Spin‐orbit torque‐driven magnetic random‐access memory (SOT‐MRAM) is one of the promising candidates for next‐generation memory technologies beyond Moore's law.
Xu Zhang, Aitian Chen, Yifan Zhang, Zhaozhuo Zeng, Yaqin Guo, Dongxing Zheng, Baoshan Cui, Chuangwen Wu, Wenjie Song, Shuo Yang, Zijun Luo, Jingfeng Li, Gianluca Gubbiotti, Xiufeng Han, Jinkui Zhao, Peng Yan, Xufeng Kou, Xixiang Zhang, Hao Wu   +18 more
doaj   +1 more source