Results 1 to 10 of about 16,180,989 (156)
Embedded Memory Hierarchy Exploration Based on Magnetic Random Access Memory
Journal of Low Power Electronics and Applications, 2014 Static random access memory (SRAM) is the most commonly employed semiconductor in the design of on-chip processor memory. However, it is unlikely that the SRAM technology will have a cell size that will continue to scale below 45 nm, due to the leakage ...
Luís Vitório Cargnini +4 more
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IEEE Access, 2023 In non-volatile random-access memory (RAM) technologies, the spin-torque transfer magnetic random-access memory (STT-MRAM) is a promising candidate. STT-MRAM has attracted attention owing to its advantages, such as a high density, high endurance, and ...
Thien An Nguyen, Jaejin Lee
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Magnetic Random Access Memories (MRAM) beyond Information Storage [PDF]
2020 IEEE Symposium on VLSI Technology, 2020 Magnetic random access memory (MRAM) is now available as embedded memory from major CMOS foundries. In this study, we demonstrated that slightly modified magnetic tunnel junctions than those used in conventional STT -MRAM can be used for multifunctional purposes, namely magnetic field sensing and RF oscillators.
Ioan Lucian Prejbeanu +2 more
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Non-volatile magnetic random access memories (MRAM)
Comptes Rendus Physique, 2005 Magnetic random access memories (MRAM) are a new non-volatile memory technology trying establish itself as a mainstream technology. This paper reviews briefly the most important progress realized in the past 10 years. Basic MRAM cell operation is described as well as the main subsisting design challenges.
Ricardo C Sousa
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IEEE Transactions on Magnetics, 2022 As an emerging non-volatile memory (NVM) technology, spin-torque transfer magnetic random access memory (STT-MRAM) has received great attention in recent years since it combines the features of low switching energy, fast write/read speed, and high scalability.
Xingwei Zhong, Guanghui Song, Kui Cai
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Nanoscale Materials for State-of-the-Art Magnetic Memory Technologies
Успехи физики металлов, 2021 The review deals with different materials science aspects of the state-of-the-art magnetic memory technologies, such as magnetoresistive random-access memory (MRAM), antiferromagnetic (AFM) memory, and skyrmion racetrack memory.
A. E. Hafarov, S. M. Voloshko, A. Kaidatzis, I. A. Vladymyrskyi
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On the Design of 7/9-Rate Sparse Code for Spin-Torque Transfer Magnetic Random Access Memory
IEEE Access, 2021 A design of 7/9-rate sparse code for spin-torque transfer magnetic random access memory (STT-MRAM) is proposed in this work. The STT-MRAM using spin-polarized current through magnetic tunnel junction (MTJ) to write data is one of the most promising ...
Chi Dinh Nguyen
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Proactively Invalidating Dead Blocks to Enable Fast Writes in STT-MRAM Caches
IEEE Access, 2022 Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM) is a promising emerging memory technology for on-chip caches. It has a low read access time and low leakage power. Unfortunately, however, STT-MRAM suffers from its long write latency and high
Yongjun Kim +4 more
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Benchmarking and Optimization of Spintronic Memory Arrays
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2020 In this article, we present a cross-layer optimization and benchmarking of various spintronic memory devices, including spin-transfer-torque magnetic random access memory (STT-MRAM), spin-orbit-torque (SOT) MRAM, voltage-controlled exchange coupling ...
Yu-Ching Liao, Chenyun Pan, Azad Naeemi
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IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2023 Compute-in-memory (CIM) accelerator has become a popular solution to achieve high energy efficiency for deep learning applications in edge devices. Recent works have demonstrated CIM macros using nonvolatile memories [spin transfer torque (STT)-MRAM and ...
Vinod Kurian Jacob +5 more
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