Results 1 to 10 of about 831 (177)

Magnetic Random Access Memories (MRAM) beyond Information Storage [PDF]

2020 IEEE Symposium on VLSI Technology, 2020
Magnetic random access memory (MRAM) is now available as embedded memory from major CMOS foundries. In this study, we demonstrated that slightly modified magnetic tunnel junctions than those used in conventional STT -MRAM can be used for multifunctional purposes, namely magnetic field sensing and RF oscillators.
Sousa, Ricardo C., Chavent, A., Iurchuk, V., Vila, L., Ebels, U., Dleny, B., Di Pendina, G., Prenat, G., Langer, J., Wrona, J., Prejbeanu, I.L.   +10 more
openaire   +4 more sources

Research on Open Magnetic Shielding Packaging for STT and SOT-MRAM [PDF]

Micromachines
As an emerging type of non-volatile memory, magneto-resistive random access memory (MRAM) stands out for its exceptional reliability and rapid read–write speeds, thereby garnering considerable attention within the industry.
Haibo Ye, Xiaofei Zhang, Nannan Lu, Jiawei Li, Jun Jia, Guilin Zhao, Jiejie Sun, Lei Zhang, Chao Wang   +8 more
doaj   +2 more sources

Non-volatile magnetic random access memories (MRAM)

Comptes Rendus. Physique, 2005
Magnetic random access memories (MRAM) are a new non-volatile memory technology trying establish itself as a mainstream technology. This paper reviews briefly the most important progress realized in the past 10 years. Basic MRAM cell operation is described as well as the main subsisting design challenges.
Ricardo C. Sousa, I. Lucian Prejbeanu
openaire   +3 more sources

Embedded Memory Hierarchy Exploration Based on Magnetic Random Access Memory

Journal of Low Power Electronics and Applications, 2014
Static random access memory (SRAM) is the most commonly employed semiconductor in the design of on-chip processor memory. However, it is unlikely that the SRAM technology will have a cell size that will continue to scale below 45 nm, due to the leakage ...
Luís Vitório Cargnini, Lionel Torres, Raphael Martins Brum, Sophiane Senni, Gilles Sassatelli   +4 more
doaj   +3 more sources

Magnetic memory driven by spin splitting torque in nonrelativistic collinear antiferromagnet [PDF]

Nature Communications
Magnetic random-access memory (MRAM) provides a promising candidate for the next-generation memory technology with high-energy efficiency and fast operation speed. Spin splitting band structure in nonrelativistic collinear antiferromagnet with de-coupled
Yaqin Guo, Aitian Chen, Zhaozhuo Zeng, Tai An, Qirui Cui, Yonglong Ga, Dongxing Zheng, Xiao Deng, Xu Zhang, Meng Tang, Zengtai Zhu, Chuangwen Wu, Jing Zhang, Yibo Fan, Zhe Wang, Wenjie Song, Peng Yan, Tao Zhu, Shouguo Wang, Xiufeng Han, Jinkui Zhao, Kang L. Wang, Guoqiang Yu, Xixiang Zhang, Hao Wu   +24 more
doaj   +2 more sources

Improving MRAM Performance with Sparse Modulation and Hamming Error Correction [PDF]

Sensors
With the rise of the Internet of Things (IoT), smart sensors are increasingly being deployed as compact edge processing units, necessitating continuously writable memory with low power consumption and fast access times.
Nam Le, Thien An Nguyen, Jong-Ho Lee, Jaejin Lee   +3 more
doaj   +2 more sources

Harnessing orbital Hall effect in spin-orbit torque MRAM [PDF]

Nature Communications
Spin-Orbit Torque (SOT) Magnetic Random-Access Memory (MRAM) devices offer improved power efficiency, nonvolatility, and performance compared to static RAM, making them ideal, for instance, for cache memory applications. Efficient magnetization switching,
Rahul Gupta, Chloé Bouard, Fabian Kammerbauer, J. Omar Ledesma-Martin, Arnab Bose, Iryna Kononenko, Sylvain Martin, Perrine Usé, Gerhard Jakob, Marc Drouard, Mathias Kläui   +10 more
doaj   +2 more sources

Improving Bit-Error-Rate Performance Using Modulation Coding Techniques for Spin-Torque Transfer Magnetic Random Access Memory

IEEE Access, 2023
In non-volatile random-access memory (RAM) technologies, the spin-torque transfer magnetic random-access memory (STT-MRAM) is a promising candidate. STT-MRAM has attracted attention owing to its advantages, such as a high density, high endurance, and ...
Thien An Nguyen, Jaejin Lee
doaj   +1 more source

Nanoscale Materials for State-of-the-Art Magnetic Memory Technologies

Успехи физики металлов, 2021
The review deals with different materials science aspects of the state-of-the-art magnetic memory technologies, such as magnetoresistive random-access memory (MRAM), antiferromagnetic (AFM) memory, and skyrmion racetrack memory.
A. E. Hafarov, S. M. Voloshko, A. Kaidatzis, I. A. Vladymyrskyi
doaj   +1 more source

On the Design of 7/9-Rate Sparse Code for Spin-Torque Transfer Magnetic Random Access Memory

IEEE Access, 2021
A design of 7/9-rate sparse code for spin-torque transfer magnetic random access memory (STT-MRAM) is proposed in this work. The STT-MRAM using spin-polarized current through magnetic tunnel junction (MTJ) to write data is one of the most promising ...
Chi Dinh Nguyen
doaj   +1 more source