Results 21 to 30 of about 16,180,989 (156)
Screening of 193i and EUV lithography process options for STT-MRAM orthogonal array MTJ pillars
Micro and Nano Engineering, 2021 Spin-transfer torque magnetic random-access memory (STT-MRAM) is considered as the most promising candidate to replace the complementary metal-oxide-semiconductor (CMOS) based memories that are dominating the market in the last few decades.
Murat Pak +3 more
doaj +1 more source
Evaluation of embedded STT-MRAM for Ultra Low Power applications
, 2019 National audienceThe complexity of embedded devices increases as today's applications request always more services. However, the power consumption of SoC has significantly increased due to the high-density integration and the high leakage power of ...
Patrigeon, Guillaume +2 more
core +4 more sources
IEEE Journal of the Electron Devices Society, 2020 We have developed a manufacturing-friendly spin-orbit torque magnetic random access memory (SOT-MRAM) technology in CMOS compatible 8-inch fab process.
Sk Ziaur Rahaman +16 more
doaj +1 more source
AIP Advances, 2020 In order to utilize perpendicular spin-torque-transfer magnetic-random-access-memory (p-STT MRAM) as a storage class memory, the achievement of performing multi-level-cell (MLC) operation is important in increasing the integration density of p-STT MRAM ...
Han-Sol Jun +7 more
doaj +1 more source
Hi-End: Hierarchical, Endurance-Aware STT-MRAM-Based Register File for Energy-Efficient GPUs
IEEE Access, 2020 Modern Graphics Processing Units (GPUs) require large hardware resources for massive parallel thread executions. In particular, modern GPUs have a large register file composed of Static Random Access Memory (SRAM). Due to the high leakage current of SRAM,
Won Jeon +4 more
doaj +1 more source
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2022 Valley-spin hall (VSH) effect in monolayer WSe2 has been shown to exhibit highly beneficial features for nonvolatile memory (NVM) design. Key advantages of VSH-based magnetic random access memory (VSH-MRAM) over spin orbit torque (SOT)-MRAM include ...
Karam Cho, Sumeet Kumar Gupta
doaj +1 more source
Random number generation and working memory. [PDF]
, 2007 We demonstrate the close relationship that exists between random sequence generation and working memory functioning. We clarify the nature of this link by examining the impact of concurrent requirements for random sequence response quality.
Towse, John N., Cheshire, Andrea
core +4 more sources
Advanced Materials, EarlyView.Magnetic tunnel junctions (MTJs) using MgO tunnel barriers face challenges of high resistance‐area product and low tunnel magnetoresistance (TMR). To discover alternative materials, Literature Enhanced Ab initio Discovery (LEAD) is developed. The LEAD‐predicted materials are theoretically evaluated, showing that MTJs with dusting of ScN or TiN on ...
Sabiq Islam +6 more
wiley +1 more source
Planar Hall-effect magnetic random access memory [PDF]
, 2006 We suggest a type of magnetic random access memory (MRAM) that is based on the phenomenon of the planar Hall effect (PHE) in magnetic films, and we demonstrate this idea with manganite films.
Bason, Y. +5 more
core
Advanced Materials, EarlyView.ABSTRACT The accelerating expansion of data‐centric technologies is sharply increasing the energy burden of information storage, placing unprecedented pressure on the efficiency of magnetic switching. Conventional field‐driven reversal, once the foundation of magnetic memory, has become impractical in modern architectures due to its high energy cost ...
Mohammad H. Badarneh +2 more
wiley +1 more source