Results 21 to 30 of about 831 (177)

Magnetic Random Access Memory (MRAM) Device Development [PDF]

, 2000
The recent discovery of materials that have anomalous magneto-resistive properties has generated renewed commercial interest in metal-based fast memory storage as an alternative to the currently used semiconductor-based devices. One particularly promising ternary alloy, fabricated at LLNL, appeared to have exceptional field response.
Cerjan, C, Law, B P
openaire   +2 more sources

High-Density 1R/1W Dual-Port Spin-Transfer Torque MRAM

Micromachines, 2022
Spin-transfer torque magnetic random-access memory (STT-MRAM) has several desirable features, such as non-volatility, high integration density, and near-zero leakage power.
Yeongkyo Seo, Kon-Woo Kwon
doaj   +1 more source

Size-Dependent Switching Properties of Spin-Orbit Torque MRAM With Manufacturing-Friendly 8-Inch Wafer-Level Uniformity

IEEE Journal of the Electron Devices Society, 2020
We have developed a manufacturing-friendly spin-orbit torque magnetic random access memory (SOT-MRAM) technology in CMOS compatible 8-inch fab process.
Sk Ziaur Rahaman, I-Jung Wang, Ding-Yeong Wang, Chi-Feng Pai, Yu-Chen Hsin, Shan-Yi Yang, Hsin-Han Lee, Yao-Jen Chang, Yi-Ching Kuo, Yi-Hui Su, Guan-Long Chen, Fang-Ming Chen, Jeng-Hua Wei, Tuo-Hung Hou, Shyh-Shyuan Sheu, Chih-I Wu, Duan-Lee Deng   +16 more
doaj   +1 more source

Multi-level resistance uniformity of double pinned perpendicular magnetic-tunnel-junction spin-valve depending on top MgO barrier thickness

AIP Advances, 2020
In order to utilize perpendicular spin-torque-transfer magnetic-random-access-memory (p-STT MRAM) as a storage class memory, the achievement of performing multi-level-cell (MLC) operation is important in increasing the integration density of p-STT MRAM ...
Han-Sol Jun, Jin-Young Choi, Kei Ashiba, Sun-Hwa Jung, Miri Park, Jong-Ung Baek, Tae-Hun Shim, Jea-Gun Park   +7 more
doaj   +1 more source

Hi-End: Hierarchical, Endurance-Aware STT-MRAM-Based Register File for Energy-Efficient GPUs

IEEE Access, 2020
Modern Graphics Processing Units (GPUs) require large hardware resources for massive parallel thread executions. In particular, modern GPUs have a large register file composed of Static Random Access Memory (SRAM). Due to the high leakage current of SRAM,
Won Jeon, Jun Hyun Park, Yoonsoo Kim, Gunjae Koo, Won Woo Ro   +4 more
doaj   +1 more source

Valley-Spin Hall Effect-Based Nonvolatile Memory With Exchange-Coupling-Enabled Electrical Isolation of Read and Write Paths

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2022
Valley-spin hall (VSH) effect in monolayer WSe2 has been shown to exhibit highly beneficial features for nonvolatile memory (NVM) design. Key advantages of VSH-based magnetic random access memory (VSH-MRAM) over spin orbit torque (SOT)-MRAM include ...
Karam Cho, Sumeet Kumar Gupta
doaj   +1 more source

Magneto‐Ionic Devices With Polymer‐Based Electrolytes

Advanced Functional Materials, EarlyView.
Polymer electrolytes are introduced for magneto‐ionic devices based on hydroxide and hydrogen ions. The magneto‐ionic effect results in a pronounced voltage‐controlled variation of coercivity in both devices. The switching speed is in the range of 100 ms.
Markus Gößler, Richard Weber, Michael Sommer, Karin Leistner   +3 more
wiley   +1 more source

Nitrospinics: Nitride Materials for Spin‐Orbit and Orbital Torques From Memory to Artificial Intelligence

Advanced Functional Materials, EarlyView.
Further advances in applications can be anticipated through the development of unique and functional materials beyond conventional alloys. Nitrogen enables tailor‐made orbital textures in various transition‐metal hosts, paving the way for devices ranging from spintronics memory to artificial intelligence hardware.
Prabhat Kumar, Gaurav Kumar Shukla, Yoshio Miura, Shinji Isogami   +3 more
wiley   +1 more source

LEAD: Literature Enhanced Ab Initio Discovery of Nitride Dusting Layers for Enhanced Tunnel Magnetoresistance and Lower Resistance Magnetic Tunnel Junctions

Advanced Materials, EarlyView.
Magnetic tunnel junctions (MTJs) using MgO tunnel barriers face challenges of high resistance‐area product and low tunnel magnetoresistance (TMR). To discover alternative materials, Literature Enhanced Ab initio Discovery (LEAD) is developed. The LEAD‐predicted materials are theoretically evaluated, showing that MTJs with dusting of ScN or TiN on ...
Sabiq Islam, William S. Rogers, Chen‐Yu Hu, Ming‐Yuan Song, Xinyu Bao, Shehrin Sayed, Jean Anne C. Incorvia   +6 more
wiley   +1 more source

Novel CPU cache architecture based on two-dimensional MTJ device with ferromagnetic Fe3GeTe2

AIP Advances
With the development of Artificial Intelligence (AI) in recent years, the fields of computer, biology, medicine, and aerospace have demanded higher requirements for the processing and storage of information.
Shaopu Han, Yanfeng Jiang
doaj   +1 more source