Results 31 to 40 of about 831 (177)

Research progresses on switching mechanism and advanced electrical characterizations of magnetic random access memory

Gongneng cailiao yu qijian xuebao
To address the energy efficiency and data throughput limitations of the Von Neumann architecture, computing-in-memory (CIM) systems based on spiking neural networks (SNNs) impose rigorous demands on the performance of non-volatile memory technologies ...
Xiaoqian MA, Shifan GAO, Yiming QU
doaj   +1 more source

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source

Generating Unconventional Spin‐Orbit Torques With Patterned Phase Gradients in Tungsten Thin Films

Advanced Materials, EarlyView.
ABSTRACT A key aim in spintronics is to achieve current‐induced magnetization switching via spin‐orbit torques without external magnetic fields. For this, the focus of recent work has been on introducing controlled lateral gradients across ferromagnet/heavy‐metal devices, giving variations in thickness, composition, or interface quality.
Lauren J. Riddiford, Anne Flechsig, Shilei Ding, Emir Karadža, Niklas Kercher, Tobias Goldenberger, Elisabeth Müller, Pietro Gambardella, Laura J. Heyderman, Aleš Hrabec   +9 more
wiley   +1 more source

TPCSA-MRAM: Ternary Precharge Sense Amplifier-Based MRAM

IEEE Access
The emerging multi-value logic technology in memory systems has increased data storage capacity and power efficiency. In this paper, to address the power consumption challenge of ternary memory, a ternary precharge sense amplifier (TPCSA)-based magnetic ...
Mohammad Mahdi Mazaheri, Abdolah Amirany, Mohammad Hossein Moaiyeri   +2 more
doaj   +1 more source

Multi-Port 1R1W Transpose Magnetic Random Access Memory by Hierarchical Bit-Line Switching

IEEE Access, 2019
Emerging Magnetic Random-Access Memory (MRAM) has shown a great potential to replace Static-RAM (SRAM) and Dynamic-RAM (DRAM) in the working memories including Cache and main memory. MRAM benefits from its high-density, fast speed, low standby power, and
Liang Chang, Zhaohao Wang, Youguang Zhang, Weisheng Zhao   +3 more
doaj   +1 more source

Orbital Magnetic Moment Controlled Converse Magnetoelectric Effect in bcc‐Co3Mn/Fe/V/PMN‐PT Multiferroic Heterostructures

Advanced Science, EarlyView.
Based on orbital magnetic moment control, a material design strategy is proposed for a giant converse magnetoelectric effect in multiferroic heterostructures. This study will pioneer a promising route toward low‐power spintronic devices with an electric field.
Takamasa Usami, Yuichi Murakami, Ryota Watarai, Yu Shiratsuchi, Yoshihiro Gohda, Kohei Hamaya   +5 more
wiley   +1 more source

Union Bound Analysis for Spin-Torque Transfer Magnetic Random Access Memory (STT-MRAM) With Channel Quantization

IEEE Transactions on Magnetics, 2022
As an emerging non-volatile memory (NVM) technology, spin-torque transfer magnetic random access memory (STT-MRAM) has received great attention in recent years since it combines the features of low switching energy, fast write/read speed, and high scalability.
Xingwei Zhong, Kui Cai, Guanghui Song
openaire   +3 more sources

Ferroelectric Devices for In‐Memory and In‐Sensor Computing

Advanced Science, EarlyView.
Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang, Ronghuan Xie, Qiang Cao, Shishen Yan, Xiaolin Wang, Limei Zheng   +5 more
wiley   +1 more source

Off-axis electron holography for the direct visualization of perpendicular shape anisotropy in nanoscale 3D magnetic random-access-memory devices

APL Materials, 2022
Perpendicular shape anisotropy (PSA) and double magnetic tunnel junctions (DMTJs) offer practical solutions to downscale spin-transfer-torque Magnetic Random-Access Memory (STT-MRAM) beyond 20 nm technology nodes, while retaining their thermal stability ...
Trevor P. Almeida, Alvaro Palomino, Steven Lequeux, Victor Boureau, Olivier Fruchart, Ioan Lucian Prejbeanu, Bernard Dieny, David Cooper   +7 more
doaj   +1 more source

Programmable Topological Magnetic Textures in Above‐Room‐Temperature 2D Ferromagnet Fe3GaTe2

Advanced Science, EarlyView.
This work demonstrates the programmable generation and deterministic modulation of magnetic skyrmion bags with high‐order topological numbers in the above‐room‐temperature 2D ferromagnet Fe3GaTe2 (FGaT) via current‐pulse control. Furthermore, highly efficient electrical manipulation and current‐driven parallel motion of these high‐order topological ...
Hanqing Shi, Yilian Xi, Jingwei Zhang, Jiaqi Liu, Zhizhen Ren, Shilei Zhang, Weichang Hao, Haifeng Feng, Yi Du   +8 more
wiley   +1 more source