Results 51 to 60 of about 831 (177)
Memory materials and devices: From concept to application
InfoMat, 2020 Memory cells have always been an important element of information technology. With emerging technologies like big data and cloud computing, the scale and complexity of data storage has reached an unprecedented peak with a much higher requirement for ...
Zhenhan Zhang +8 more
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Low power device design application by magnetic tunnel junctions in Magnetoresistive Random Access Memory (MRAM) [PDF]
SN Applied Sciences, 2019 The spintronics techniques combines the spin degree and charge which gives rise to state of the art devices like magnetic tunnel junctions which are ultra-low power devices. It is proposed in the paper to evaluate magnetic tunnel junctions (MTJ) at the device level.
S. Hamsa, N. Thangadurai, A. G. Ananth
openaire +1 more source
Stochastic‐MTJ Sampler Arrays for In‐Array Monte–Carlo Estimation
Advanced Electronic Materials, EarlyView.A low‐energy‐barrier magnetic tunnel junction array is operated as a probability‐domain sampler: each cell's random switching, programmed through a shared digital‐to‐analog converter, makes the per‐column multiply–accumulate an unbiased Monte–Carlo expectation estimator that returns both a mean and a calibrated uncertainty.
Ran Zhang +6 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.The amorphous tungsten (W) is found to be a promising non‐magnetic interlayer simultaneously driving the long‐range interlayer exchange coupling and the large spin Hall effect in a synthetic antiferromagnet (SyAF). Thanks to these characteristics, efficient spin‐orbit torque switching is achieved in the SyAF.
Xueyao Hou +9 more
wiley +1 more source
Recent progress in spin-orbit torque magnetic random-access memory
npj SpintronicsSpin-orbit torque magnetic random-access memory (SOT-MRAM) offers promise for fast operation and high endurance but faces challenges such as low switching current, reliable field free switching, and back-end of line manufacturing processes.
V. D. Nguyen +3 more
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AIP Advances, 2019 Magnetic Random Access Memory (MRAM) targeting cache memory replacement consists of high density arrays of perpendicular Magnetic Tunnel Junctions (p-MTJs).
S. Van Beek +5 more
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Exploiting Ferroelectric and Spintronic Dynamics for Neural Network Computation
Advanced Intelligent Systems, EarlyView.Ferroelectric and spintronic devices, relying on the control of polarization and magnetization, offer intrinsically fast, durable, energy‐efficient, and low‐latency building blocks for analog in‐memory computing. The hysteretic dynamics of an order parameter are leveraged to provide nonvolatile, multistate memory and nonlinear switching. Brain‐inspired
Dashiell Harrison +4 more
wiley +1 more source
Decoupled Spin Hall Voltage Readout for Domain‐Wall Synapses in Embedded Neuromorphic Computing
Advanced Intelligent Systems, EarlyView.Magnetic domain‐wall synapses provide nonvolatile multilevel states with linear, symmetric weight updates, making them attractive for neuromorphic hardware. However, DW MTJ readout has magnetoresistance‐limited dynamic range, while anomalous‐Hall readout suffers from weak voltage output and read/write coupling.
Stanislav Sin +2 more
wiley +1 more source
Toggle Spin-Orbit Torque MRAM With Perpendicular Magnetic Anisotropy
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2019 Spin-orbit torque (SOT) is a promising switching mechanism for magnetic random-access memory (MRAM) as a result of the potential for improved switching speed and energy efficiency.
Naimul Hassan +3 more
doaj +1 more source
Two‐Dimensional van der Waals Antiferromagnets: Fabrication, Probes, Control, and Applications
Advanced Physics Research, EarlyView.Two‐dimensional van der Waals antiferromagnets are emerging as versatile platforms for spintronic, optoelectronic, and quantum devices. This review summarizes recent progress in their fabrication, magnetic characterization, fields, interfacial engineering, chemical modification, and representative applications.
Huangyu Wu +10 more
wiley +1 more source