Results 51 to 60 of about 16,180,989 (156)

Unveiling the endurance limit of SOT-MRAM with CoFeB/MgO/CoFeB junctions: From elemental interdiffusion to array-level reliability

Nano Research
Spin-orbit torque magnetic random access memory (SOT-MRAM), which is theoretically predicted with “unlimited” endurance, has been regarded as a promising alternative to conventional static random access memory (SRAM)-based L1 to L3 caches in advanced ...
Chuanpeng Jiang, Jinhao Li, Chao Wang, Shiyang Lu, Xingyu Yao, Wenlong Cai, Danrong Xiong, Xiaofei Fan, Hong-Xi Liu, Gefei Wang, He Zhang, Kaihua Cao, Zhaohao Wang, Weisheng Zhao   +13 more
doaj   +1 more source

Practical Experiments to Evaluate Quality Metrics of MRAM-Based Physical Unclonable Functions

IEEE Access, 2020
Process variations in the manufacturing of digital circuits can be leveraged to design Physical Unclonable Functions (PUFs) that are extensively employed in hardware-based security.
Arash Nejat, Frederic Ouattara, Mohammad Mohammadinodoushan, Bertrand Cambou, Ken Mackay, Lionel Torres   +5 more
doaj   +1 more source

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

Stochastic‐MTJ Sampler Arrays for In‐Array Monte–Carlo Estimation

Advanced Electronic Materials, EarlyView.
A low‐energy‐barrier magnetic tunnel junction array is operated as a probability‐domain sampler: each cell's random switching, programmed through a shared digital‐to‐analog converter, makes the per‐column multiply–accumulate an unbiased Monte–Carlo expectation estimator that returns both a mean and a calibrated uncertainty.
Ran Zhang, Nellie Laleni, Sina Ranjbar, Andreas Tsiougkos, Nandakishor Yadav, Vasilis Pavlidis, Thomas Kämpfe   +6 more
wiley   +1 more source

Practical Experiments on Fabricated TAS-MRAM Dies to Evaluate the Stochastic Behavior of Voltage-Controlled TRNGs

IEEE Access, 2019
Noises exist in digital circuits can be leveraged as the source of entropy to design true random numbers generators (TRNGs), which is an important primitive component in cryptography and hardware-based security applications.
Frederic Ouattara, Arash Nejat, Lionel Torres, Ken Mackay   +3 more
doaj   +1 more source

Environmental Effects on RRAM Cells Based on 2D Halide Perovskite Materials

Advanced Electronic Materials, EarlyView.
RRAM offers high speed, scalability, and low power, positioning it as a next‐generation non‐volatile memory. Two‐dimensional halide perovskites show promise due to tunable optoelectronic properties and flexible processing but suffer from environmental sensitivity. This review examines degradation from humidity, temperature, light, and strain, discusses
Mojtaba Joodaki, Babitha Arun, Hartmut Hillmer, Chih‐Chieh Hsu   +3 more
wiley   +1 more source

Spintronics and magnetic memory devices

Advances in Physics: X
Spintronics technology enables electrical reading and writing of magnetization orders, thus have led to development of magnetic random access memory (MRAM).
Gyung-Min Choi, OukJae Lee, Sunjae Chung, Woojin Kim, Taeyoung Lee, Byong-Guk Park, Seungmo Yang   +6 more
doaj   +1 more source

Amorphous Tungsten Driving Extraordinary Long‐Range Interlayer Exchange Coupling and Large Spin‐Orbit Torque

Advanced Electronic Materials, EarlyView.
The amorphous tungsten (W) is found to be a promising non‐magnetic interlayer simultaneously driving the long‐range interlayer exchange coupling and the large spin Hall effect in a synthetic antiferromagnet (SyAF). Thanks to these characteristics, efficient spin‐orbit torque switching is achieved in the SyAF.
Xueyao Hou, Keita Ito, Varun K. Kushwaha, Takumi Yamazaki, Junwei Gu, Zhenchao Wen, Keisuke Masuda, Jun Okabayashi, Shoya Sakamoto, Takeshi Seki   +9 more
wiley   +1 more source

Memory materials and devices: From concept to application

InfoMat, 2020
Memory cells have always been an important element of information technology. With emerging technologies like big data and cloud computing, the scale and complexity of data storage has reached an unprecedented peak with a much higher requirement for ...
Zhenhan Zhang, Zongwei Wang, Tuo Shi, Chong Bi, Feng Rao, Yimao Cai, Qi Liu, Huaqiang Wu, Peng Zhou   +8 more
doaj   +1 more source

Low power device design application by magnetic tunnel junctions in Magnetoresistive Random Access Memory (MRAM) [PDF]

SN Applied Sciences, 2019
The spintronics techniques combines the spin degree and charge which gives rise to state of the art devices like magnetic tunnel junctions which are ultra-low power devices. It is proposed in the paper to evaluate magnetic tunnel junctions (MTJ) at the device level.
S. Hamsa, N. Thangadurai, A. G. Ananth
openaire   +1 more source