Results 71 to 80 of about 16,180,989 (156)

Introduction to magnetic random-access memory

, 2017
Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpass all other types of memory devices in terms of nonvolatility, low energy dissipation, fast ...
Lee, Kyung-Jin, Dieny, Bernard, Goldfarb, Ronald B   +2 more
core  

Magnetic memory driven by spin splitting torque in nonrelativistic collinear antiferromagnet

Nature Communications
Magnetic random-access memory (MRAM) provides a promising candidate for the next-generation memory technology with high-energy efficiency and fast operation speed. Spin splitting band structure in nonrelativistic collinear antiferromagnet with de-coupled
Yaqin Guo, Aitian Chen, Zhaozhuo Zeng, Tai An, Qirui Cui, Yonglong Ga, Dongxing Zheng, Xiao Deng, Xu Zhang, Meng Tang, Zengtai Zhu, Chuangwen Wu, Jing Zhang, Yibo Fan, Zhe Wang, Wenjie Song, Peng Yan, Tao Zhu, Shouguo Wang, Xiufeng Han, Jinkui Zhao, Kang L. Wang, Guoqiang Yu, Xixiang Zhang, Hao Wu   +24 more
doaj   +1 more source

Molecularly Engineered Wing‐Shaped Azobenzene Memristors for Logic‐in‐Memory and Edge Visual Intelligence

Advanced Science, Volume 13, Issue 53, 24 September 2026.
Rational engineering of terminal substituents in symmetric azobenzene‐based molecules enables precise control over conformationally coupled charge‐transfer processes. This design yields tunable nonvolatile resistive memory behaviors, ranging from write‐once‐read‐many‐times (WORM) to rewritable switching.
Yanze Liu, Tao Han, Jiahui Ding, Hong Lian, Lingling Yao, Zhaoxin Xu, Xingyu Zhang, Shuanglong Wang, Jiangnan Xia, Tianchi Zhang, Weiwei Kang, Qingchen Dong   +11 more
wiley   +1 more source

Highly‐Uniform Passive Crossbar Arrays of Resistive Switching Random Access Memory (RRAM) for In‐Memory Computing Applications

Advanced Electronic Materials, Volume 12, Issue 18, 21 September 2026.
Passive resistive memory arrays promise efficient in‐memory computing but suffer from sneak paths and programming variability. Here, highly uniform 32 × 32 passive RRAM crossbars are programmed with multilevel precision below 3% error and 99.5% yield.
S. Ricci, P. Mannocci, M. Porzani, D. Bridarolli, F. Carletti, M. Farronato, D. Ielmini   +6 more
wiley   +1 more source

Neuromorphic Hardware Materials for Intelligent Artificial Perception and Multimodal Fusion: From Sensing to Cognition

Interdisciplinary Materials, Volume 5, Issue 5, Page 699-727, September 2026.
Neuromorphic hardware enables the integration of sensing, memory, and computing for intelligent artificial perception. Recent advances in multimodal fusion further highlight its potential for embodied intelligence and next‐generation human–machine interfaces.
Yixin Zhu, Yuqing Hu, Changjin Wan, Qing Wan   +3 more
wiley   +1 more source

Pamięć MRAM

, 2019
MRAM (Magneto-resistive random-access memory), czyli typ nieulotnej pamięci operacyjnej o swobodnym dostępie, wykorzystującej zjawisko gigantycznego magnetooporu lub tunelowy efekt magnetorezystancyjny.
Jasica, Gabriela
core  

Spin-Orbit Torque Magnetic Random Access Memory

, 2022
Methods and devices for a spintronic device of spin-orbit torque magnetic random access memory (SOT-MRAM) are provided. A unit cell of a device can comprise a ferromag­netic (or ferrimagnetic or antiferromagnetic) layer on the heavy metal layer, and a ...
Yuan, Huaiyang, Zhang, Yin, Wang, Xiangrong   +2 more
core  

Electrically Switchable Altermagnetism in Monolayer MoCl3

Rare Metals, Volume 45, Issue 9, September 2026.
ABSTRACT Altermagnets intertwine spin‐split bands with vanishing net magnetization, offering great potential for high‐density, stray‐field‐free spintronic devices. However, their development is hindered by both material scarcity and difficulties in external control due to their intrinsic symmetry protection.
Zhengming Zhang, Zhenyu Fan, Dunhui Wang
wiley   +1 more source

Radio-frequency assisted switching in perpendicular magnetic tunnel junctions

npj Spintronics
Spin-transfer torque magnetic random-access memory (STT-MRAM) relies on nanoscale magnetic tunnel junctions (MTJs) as its fundamental building blocks. Next-generation STT-MRAM requires strategies that simultaneously improve switching energy efficiency ...
Mark Hayward, Salvatore Perna, Massimiliano d’Aquino, Claudio Serpico, Wonjoon Jung, Chunhui Dai, Patrick M. Braganca, Ilya N. Krivorotov   +7 more
doaj   +1 more source

Research progress and challenges of the self-heating effect in STT-MRAM devices

Gongneng cailiao yu qijian xuebao
This paper present a systematic review of recent research progress and outstanding challenges related to the self-heating effect (SHE) in spin-transfer torque magnetic random-access memory (STT-MRAM) devices.
Zhangsheng LAN, Saike ZHU, Shifan GAO, Yiming QU   +3 more
doaj   +1 more source