Results 71 to 80 of about 831 (177)

Field-free spin–orbit torque switching enabled by controllable domain wall chirality

Materials Futures
Driven by the exponential growth of artificial intelligence, the internet of things, and cloud computing, the surge in global data generation has intensified the demand for memory technologies that offer high density, ultrafast operation, and low power ...
Peiyue Yu, Meiyin Yang, Yanru Li, Shuo Xu, Ying Li, Shuaiyu Gong, Jingsong Huang, Jianfeng Gao, Weibing Liu, Shasha Wang, Lei Zhao, Enlong Liu, Wenlong Yang, Yang Gao, Shikun He, Dashan Shang, Jun Luo   +16 more
doaj   +1 more source

Field-free spin–orbit torque devices for logic and neural network applications

APL Machine Learning
Robust field-free spin–orbit torque (SOT) switching plays an essential role in realizing practical SOT-based magnetic memories and logic devices. Leveraging the strong interlayer Dzyaloshinskii–Moriya interaction, field-free SOT switching is achieved ...
Chun-Yi Lin, Jui-Yu Hsieh, Po-Chuan Wang, Chia-Chin Tsai, Chi-Feng Pai   +4 more
doaj   +1 more source

Accuracy Improvement With Weight Mapping Strategy and Output Transformation for STT-MRAM-Based Computing-in-Memory

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
This work presents an analog computing-in-memory (CiM) macro with spin-transfer torque magnetic random access memory (STT-MRAM) and 28-nm CMOS technology.
Xianggao Wang, Na Wei, Shifan Gao, Wenhao Wu, Yi Zhao   +4 more
doaj   +1 more source

TGBNN: Training Algorithm of Binarized Neural Network With Ternary Gradients for MRAM-Based Computing-in-Memory Architecture

IEEE Access
To build Neural Networks (NNs) on edge devices, Binarized Neural Network (BNN) has been proposed on the software side, while Computing-in-Memory (CiM) architecture has been proposed on the hardware side.
Yuya Fujiwara, Takayuki Kawahara
doaj   +1 more source

Concealable and Field‐Free Physical Unclonable Function Based on Voltage‐Controlled Magnetic Tunnel Junctions

Advanced Electronic Materials
Physical unclonable functions (PUFs) leverage intrinsic stochastic variations of physical properties to generate secure cryptographic keys. Magnetic random‐access memory (MRAM) is a strong candidate for PUF implementations due to its high density ...
Thomas Neuner, Jaimin Kang, Jordan Athas, Christian Duffee, Noraica Davila Melendez, Jordan A. Katine, Pedram Khalili Amiri   +6 more
doaj   +1 more source

Comprehensive Device to System Co-Design for SOT-MRAM at the 7 nm Node

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
This work presents a comprehensive spin-orbit torque (SOT)-based magnetic random access memory (MRAM) design at the 7 nm technology node, spanning from device-level characteristics to system-level power performance area (PPA).
Piyush Kumar, Da Eun Shim, Azad Naeemi
doaj   +1 more source

Characterisations and reliability of magnetic random access memories (MRAM)

, 2008
Les mémoires magnétiques à accès aléatoires (ou MRAM) sont récemment entrées en production. Ce travail de thèse vise à évaluer et caractériser les problèmes potentiels de fiabilité dus à l'introduction de la partie magnétique dans les mémoires MRAM.
openaire   +1 more source

Reduction of current for magnetization switching in a nanomagnet with perpendicular anisotropy by spin-splitter torque

Applied Physics Express
This study investigates spin-splitter torque (SST) for magnetization switching in nanoscale magnets with perpendicular anisotropy, aiming to reduce current requirements in magnetic memory devices.
Tomoki Watanabe, Keisuke Yamada, Yoshinobu Nakatani   +2 more
doaj   +1 more source

Field-free spin–orbit torque switching in ferromagnetic trilayers at sub-ns timescales

Nature Communications
Current-induced spin torques enable the electrical control of the magnetization with low energy consumption. Conventional magnetic random access memory (MRAM) devices rely on spin-transfer torque (STT), this however limits MRAM applications because of ...
Qu Yang, Donghyeon Han, Shishun Zhao, Jaimin Kang, Fei Wang, Sung-Chul Lee, Jiayu Lei, Kyung-Jin Lee, Byong-Guk Park, Hyunsoo Yang   +9 more
doaj   +1 more source

Cryogenic-temperature grain-to-grain epitaxial growth of high-quality ultrathin CoFe layer on MgFeO tunnel barrier for high-performance magnetic tunnel junctions

NPG Asia Materials
One candidate for ultimate non-volatile memory with ultralow power consumption is voltage-controlled magneto-resistive random-access memory (VC-MRAM).
Tomohiro Ichinose, Tatsuya Yamamoto, Takayuki Nozaki, Kay Yakushiji, Shingo Tamaru, Shinji Yuasa   +5 more
doaj   +1 more source