Results 61 to 70 of about 16,180,989 (156)
Advanced Intelligent Discovery, EarlyView.Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj +2 more
wiley +1 more source
Magnetic memory physically unclonable functions [PDF]
, 2020 A magnetic random access memory (MRAM) physically unclonable function (PUF) device that uses the geometric variations in magnetic memory cells to generate a random PUF response is described herein.
Rajaram, Srinath +4 more
core
AIP Advances, 2019 Magnetic Random Access Memory (MRAM) targeting cache memory replacement consists of high density arrays of perpendicular Magnetic Tunnel Junctions (p-MTJs).
S. Van Beek +5 more
doaj +1 more source
Exploiting Ferroelectric and Spintronic Dynamics for Neural Network Computation
Advanced Intelligent Systems, EarlyView.Ferroelectric and spintronic devices, relying on the control of polarization and magnetization, offer intrinsically fast, durable, energy‐efficient, and low‐latency building blocks for analog in‐memory computing. The hysteretic dynamics of an order parameter are leveraged to provide nonvolatile, multistate memory and nonlinear switching. Brain‐inspired
Dashiell Harrison +4 more
wiley +1 more source
Two‐Dimensional van der Waals Antiferromagnets: Fabrication, Probes, Control, and Applications
Advanced Physics Research, EarlyView.Two‐dimensional van der Waals antiferromagnets are emerging as versatile platforms for spintronic, optoelectronic, and quantum devices. This review summarizes recent progress in their fabrication, magnetic characterization, fields, interfacial engineering, chemical modification, and representative applications.
Huangyu Wu +10 more
wiley +1 more source
Improving MRAM Performance with Sparse Modulation and Hamming Error Correction
SensorsWith the rise of the Internet of Things (IoT), smart sensors are increasingly being deployed as compact edge processing units, necessitating continuously writable memory with low power consumption and fast access times.
Nam Le +3 more
doaj +1 more source
ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.Low‐dimensional materials (0D, 1D, and 2D) exhibit unique electronic and physicochemical properties, enabling advanced nanoelectronic and optoelectronic devices. Mixed‐dimensional heterostructures combine these materials to enhance functionality.
Qaisar Alam +3 more
wiley +1 more source
Toggle Spin-Orbit Torque MRAM With Perpendicular Magnetic Anisotropy
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2019 Spin-orbit torque (SOT) is a promising switching mechanism for magnetic random-access memory (MRAM) as a result of the potential for improved switching speed and energy efficiency.
Naimul Hassan +3 more
doaj +1 more source
Spin‐Polarized Magnetic Metal Electrodes for Magnetic Tunnel Junctions
MetalMat, EarlyView.This perspective surveys spin‐polarized magnetic metal electrodes for magnetic tunnel junctions, systematically covering conventional ferromagnets, collinear/noncollinear antiferromagnets, and emergent altermagnets. It compares tunneling polarization origins across these classes and emphasizes that effective electrode polarization is a momentum ...
Zhiyuan Duan +9 more
wiley +1 more source
Cascading Spin‐Orbitronic Terahertz Emission in Ferromagnet/Nonmagnet Bilayers
Advanced Optical Materials, Volume 14, Issue 34, 11 September 2026.While the initial generation mechanism of picosecond orbital currents remains elusive, we reveal a cascading spin–orbital transport mechanism that induces optically driven terahertz emission in ferromagnet/nonmagnet heterostructures. Using a ferromagnet with strong spin–orbit coupling, we identify a thickness‐driven transition from spin‐dominated to ...
Younghun Kim +7 more
wiley +1 more source