Results 61 to 70 of about 831 (177)
Low‐dimensional materials (0D, 1D, and 2D) exhibit unique electronic and physicochemical properties, enabling advanced nanoelectronic and optoelectronic devices. Mixed‐dimensional heterostructures combine these materials to enhance functionality.
Qaisar Alam +3 more
wiley +1 more source
Recent progress of the exchange bias based on 2D van der Waals ferromagnet
Ultrathin magnetic materials could help make smaller, energy‐efficient memories, but their magnetic states must remain stable and controllable. This review brings together recent research on exchange bias, a magnetic pinning effect in layered materials, and explains how interfaces and electrical, thermal or mechanical controls can tune it, with optical
Wajahat Ali, Shaojie Hu
wiley +1 more source
Spin‐Polarized Magnetic Metal Electrodes for Magnetic Tunnel Junctions
This perspective surveys spin‐polarized magnetic metal electrodes for magnetic tunnel junctions, systematically covering conventional ferromagnets, collinear/noncollinear antiferromagnets, and emergent altermagnets. It compares tunneling polarization origins across these classes and emphasizes that effective electrode polarization is a momentum ...
Zhiyuan Duan +9 more
wiley +1 more source
Domain‐Wall Circulation Gating and Pinning via Compositional Engineering of Cylindrical Nanowires
Cylindrical magnetic nanowires offer a promising platform for future three‐dimensional spintronic devices. By strategically engineering nanometer‐scale chemical modulations, a novel circulation gate is established to control domain wall propagation.
Laura Álvaro‐Gómez +14 more
wiley +1 more source
Radio-frequency assisted switching in perpendicular magnetic tunnel junctions
Spin-transfer torque magnetic random-access memory (STT-MRAM) relies on nanoscale magnetic tunnel junctions (MTJs) as its fundamental building blocks. Next-generation STT-MRAM requires strategies that simultaneously improve switching energy efficiency ...
Mark Hayward +7 more
doaj +1 more source
Research progress and challenges of the self-heating effect in STT-MRAM devices
This paper present a systematic review of recent research progress and outstanding challenges related to the self-heating effect (SHE) in spin-transfer torque magnetic random-access memory (STT-MRAM) devices.
Zhangsheng LAN +3 more
doaj +1 more source
Spin-torque transfer magnetic random access memory (STT-MRAM) is a promising technology for next generation nonvolatile universal memory because it reduces the high write current required by conventional MRAM and enables write current scaling as technology becomes smaller in size.
KIM, Jisu +4 more
openaire +1 more source
Advanced hybrid MRAM based novel GPU cache system for graphic processing with high efficiency
With the rapid development of portable computing devices and users’ demand for high-quality graphics rendering, embedded Graphics Processing Units (GPU) systems for graphics processing are increasingly turning into a key component of computer ...
Shaopu Han, Yanfeng Jiang
doaj +1 more source
Reconfigurable spintronic logic gate utilizing precessional magnetization switching
In traditional von Neumann computing architecture, the efficiency of the system is often hindered by the data transmission bottleneck between the processor and memory. A prevalent approach to mitigate this limitation is the use of non-volatile memory for
Ting Liu +9 more
doaj +1 more source
Multi-bit MRAM based high performance neuromorphic accelerator for image classification
Binary neural networks (BNNs) are the most efficient solution to bridge the design gap of the hardware implementation of neural networks in a resource-constrained environment.
Gaurav Verma +3 more
doaj +1 more source

