Results 1 to 10 of about 190 (135)
Advanced Electronic MaterialsPhysical unclonable functions (PUFs) leverage intrinsic stochastic variations of physical properties to generate secure cryptographic keys. Magnetic random‐access memory (MRAM) is a strong candidate for PUF implementations due to its high density ...
Thomas Neuner +6 more
doaj +2 more sources
Real-Time Switching Dynamics in STT-MRAM
IEEE Journal of the Electron Devices Society, 2022 In this paper a new experimental technique for measuring the switching dynamics and extracting the energy consumption of Spin Transfer Torque MRAM (STT-MRAM) device is presented.
N. Yazigy +6 more
doaj +4 more sources
IEEE Access, 2023 In non-volatile random-access memory (RAM) technologies, the spin-torque transfer magnetic random-access memory (STT-MRAM) is a promising candidate. STT-MRAM has attracted attention owing to its advantages, such as a high density, high endurance, and ...
Thien An Nguyen, Jaejin Lee
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High-Density 1R/1W Dual-Port Spin-Transfer Torque MRAM
Micromachines, 2022 Spin-transfer torque magnetic random-access memory (STT-MRAM) has several desirable features, such as non-volatility, high integration density, and near-zero leakage power.
Yeongkyo Seo, Kon-Woo Kwon
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Modeling and enhancing magnetic immunity of STT-MRAM
AIP Advances, 2023 In this paper, the magnetic immunity model of STT-MRAM is established. The influence of the external magnetic field on the effective energy barrier of STT-MRAM is investigated, which is the crucial issue to influence the reliability of STT-MRAM cells in ...
Guangjun Zhang, Yanfeng Jiang
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Proactively Invalidating Dead Blocks to Enable Fast Writes in STT-MRAM Caches
IEEE Access, 2022 Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM) is a promising emerging memory technology for on-chip caches. It has a low read access time and low leakage power. Unfortunately, however, STT-MRAM suffers from its long write latency and high
Yongjun Kim +4 more
doaj +1 more source
On the Design of 7/9-Rate Sparse Code for Spin-Torque Transfer Magnetic Random Access Memory
IEEE Access, 2021 A design of 7/9-rate sparse code for spin-torque transfer magnetic random access memory (STT-MRAM) is proposed in this work. The STT-MRAM using spin-polarized current through magnetic tunnel junction (MTJ) to write data is one of the most promising ...
Chi Dinh Nguyen
doaj +1 more source
Neural network detector with sparse codes for spin transfer torque magnetic random access memory
Cogent Engineering, 2023 This paper presents leveraging the neural network detector to improve the performance of a spin transfer torque magnetic random-access memory (STT-MRAM), where the sparse coding scheme is also applied to protect the user data for the asymmetric write ...
Chi Dinh Nguyen
doaj +1 more source
IEEE Access, 2023 Spin-torque-transfer magnetic random access memory (STT-MRAM) has recently emerged as a promising technology to replace dynamic random access memory (DRAM).
Thien An Nguyen, Jaejin Lee
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Modeling thermal effects in STT-MRAM
Solid-State Electronics, 2023 Tomáš Hadamek +2 more
exaly +2 more sources