Results 1 to 10 of about 17,853 (211)
Joint Optimization of Codeword Bit Distribution and Detection Threshold for Asymmetric STT-MRAM Channel [PDF]
SensorsAsymmetric error characteristics in spin-transfer torque magnetic random-access memory (STT-MRAM), particularly the imbalance between logical ‘0’ and ‘1’ error probabilities, can significantly degrade system reliability under conventional modulation and ...
Thien An Nguyen, Jaejin Lee
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MRAM: A Versatile Non-Volatile Memory for Next-Generation Computing [PDF]
NanomaterialsMagnetoresistive random-access memory (MRAM), as a promising non-volatile memory technology, has attracted extensive research interest owing to its unique combination of high operating speed, exceptional endurance, low standby power consumption, and CMOS
Zhihan Wang, Haiwen Li, Sheng Jiang
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Metastable body-centered cubic CoMnFe alloy films with perpendicular magnetic anisotropy for spintronics memory [PDF]
Science and Technology of Advanced MaterialsA body-centered cubic (bcc) FeCo(B) is a current standard magnetic material for perpendicular magnetic tunnel junctions (p-MTJs) showing both large tunnel magnetoresistance (TMR) and high interfacial perpendicular magnetic anisotropy (PMA) when MgO is ...
Deepak Kumar +5 more
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IEEE Access, 2023 In non-volatile random-access memory (RAM) technologies, the spin-torque transfer magnetic random-access memory (STT-MRAM) is a promising candidate. STT-MRAM has attracted attention owing to its advantages, such as a high density, high endurance, and ...
Thien An Nguyen, Jaejin Lee
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High-Density 1R/1W Dual-Port Spin-Transfer Torque MRAM
Micromachines, 2022 Spin-transfer torque magnetic random-access memory (STT-MRAM) has several desirable features, such as non-volatility, high integration density, and near-zero leakage power.
Yeongkyo Seo, Kon-Woo Kwon
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Proactively Invalidating Dead Blocks to Enable Fast Writes in STT-MRAM Caches
IEEE Access, 2022 Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM) is a promising emerging memory technology for on-chip caches. It has a low read access time and low leakage power. Unfortunately, however, STT-MRAM suffers from its long write latency and high
Yongjun Kim +4 more
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Modeling and enhancing magnetic immunity of STT-MRAM
AIP Advances, 2023 In this paper, the magnetic immunity model of STT-MRAM is established. The influence of the external magnetic field on the effective energy barrier of STT-MRAM is investigated, which is the crucial issue to influence the reliability of STT-MRAM cells in ...
Guangjun Zhang, Yanfeng Jiang
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On the Design of 7/9-Rate Sparse Code for Spin-Torque Transfer Magnetic Random Access Memory
IEEE Access, 2021 A design of 7/9-rate sparse code for spin-torque transfer magnetic random access memory (STT-MRAM) is proposed in this work. The STT-MRAM using spin-polarized current through magnetic tunnel junction (MTJ) to write data is one of the most promising ...
Chi Dinh Nguyen
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Neural network detector with sparse codes for spin transfer torque magnetic random access memory
Cogent Engineering, 2023 This paper presents leveraging the neural network detector to improve the performance of a spin transfer torque magnetic random-access memory (STT-MRAM), where the sparse coding scheme is also applied to protect the user data for the asymmetric write ...
Chi Dinh Nguyen
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IEEE Access, 2023 Spin-torque-transfer magnetic random access memory (STT-MRAM) has recently emerged as a promising technology to replace dynamic random access memory (DRAM).
Thien An Nguyen, Jaejin Lee
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