Results 21 to 30 of about 12,742 (221)
IEEE Access, 2019 Thanks to its superior features of non-volatility, fast read/write speed, high endurance, and low power consumption, spin-torque transfer magnetic random access memory (STT-MRAM) has become a promising candidate for the next generation non-volatile ...
Zhong Xingwei +3 more
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STT-MRAM error correction technology based on LDPC coding
AIP Advances, 2020 Spin transfer magnetoresistive random access memory (STT-MRAM) shows potential applications with the properties of non-volatility, low power consumption and high write/read speed.
Xue Zhang, Jianbin Liu, Yanfeng Jiang
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WiSE : When Learning Assists Resolving STT-MRAM Efficiency Challenges
, 2023 Spin Transfer Torque Magnetic RAM (STT-MRAM) is one of the most promising on-chip technologies, which delivers high density, non-volatility, and near-zero leakage power.
Beitollahi, Hakem, +5 more
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Embedded Memory Hierarchy Exploration Based on Magnetic Random Access Memory
Journal of Low Power Electronics and Applications, 2014 Static random access memory (SRAM) is the most commonly employed semiconductor in the design of on-chip processor memory. However, it is unlikely that the SRAM technology will have a cell size that will continue to scale below 45 nm, due to the leakage ...
Luís Vitório Cargnini +4 more
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Testing STT-MRAM: Manufacturing Defects, Fault Models, and Test Solutions
, 2021 As STT-MRAM mass production and deployment in industry is around the corner, high-quality yet cost-efficient manufacturing test solutions are crucial to ensure the required quality of products being shipped to end customers.
Wu, L. (author)
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IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2017 The spin transfer torque magnetoresistive random access memory (STT-MRAM) is the leading candidate for spin-based memories. Nevertheless, the high write energy and read disturbance of the STT-MRAM motivated researchers to find other solutions.
Ibrahim Ahmed +5 more
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Novel multi-bit parallel pipeline-circuit design for STT-MRAM
AIP Advances, 2023 In the paper, novel multi-bit parallel pipeline circuit design of STT-MRAM is proposed to improve the read and write efficiency. The shift register is utilized to change the series data into the parallel ones.
Guangjun Zhang, Yanfeng Jiang
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APL Materials, 2022 The discovery of the giant magnetoresistance (GMR) effect in 1988 started a new field called spintronics and was recognized with the 2007 Nobel Prize in Physics, which was awarded to Fert and Grunberg.
M. Pinarbasi, A. D. Kent
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Integration of STT-MRAM model into CACTI simulator [PDF]
2014 9th International Design and Test Symposium (IDT), 2014 In the last decade, academies and private companies have actively explored emerging memory technologies. STT-MRAM in particular is experiencing a rapid development but it is facing several challenges in terms of performance and reliability. Several techniques at cell level have been proposed to mitigate such issues but currently few tools and ...
Indaco, M. +5 more
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Hi-End: Hierarchical, Endurance-Aware STT-MRAM-Based Register File for Energy-Efficient GPUs
IEEE Access, 2020 Modern Graphics Processing Units (GPUs) require large hardware resources for massive parallel thread executions. In particular, modern GPUs have a large register file composed of Static Random Access Memory (SRAM). Due to the high leakage current of SRAM,
Won Jeon +4 more
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