Results 21 to 30 of about 491 (183)

Novel multi-bit parallel pipeline-circuit design for STT-MRAM

AIP Advances, 2023
In the paper, novel multi-bit parallel pipeline circuit design of STT-MRAM is proposed to improve the read and write efficiency. The shift register is utilized to change the series data into the parallel ones.
Guangjun Zhang, Yanfeng Jiang
doaj   +1 more source

Perspectives on spintronics technology development: Giant magnetoresistance to spin transfer torque magnetic random access memory

APL Materials, 2022
The discovery of the giant magnetoresistance (GMR) effect in 1988 started a new field called spintronics and was recognized with the 2007 Nobel Prize in Physics, which was awarded to Fert and Grunberg.
M. Pinarbasi, A. D. Kent
doaj   +1 more source

Hi-End: Hierarchical, Endurance-Aware STT-MRAM-Based Register File for Energy-Efficient GPUs

IEEE Access, 2020
Modern Graphics Processing Units (GPUs) require large hardware resources for massive parallel thread executions. In particular, modern GPUs have a large register file composed of Static Random Access Memory (SRAM). Due to the high leakage current of SRAM,
Won Jeon, Jun Hyun Park, Yoonsoo Kim, Gunjae Koo, Won Woo Ro   +4 more
doaj   +1 more source

PSA-STT-MRAM solution for extended temperature stability [PDF]

2021 IEEE International Memory Workshop (IMW), 2021
The concept of Perpendicular Shape Anisotropy (PSA) spin transfer torque (STT) MRAM has been recently proposed as a solution to achieve downsize scalability of MRAM below sub-10 nm technology nodes, down to 3-4 nm cell size lateral dimensions. In conventional p-STT-MRAM, at sub-20 nm diameters, the perpendicular anisotropy arising from the MgO/CoFeB ...
Steven Lequeux, Trevor Almeida, Nuno Caçoilo, Alvaro Palomino, Ioan Lucian Prejbeanu, Ricardo C. Sousa, David Cooper, Bernard Dieny   +7 more
openaire   +1 more source

Off-axis electron holography for the direct visualization of perpendicular shape anisotropy in nanoscale 3D magnetic random-access-memory devices

APL Materials, 2022
Perpendicular shape anisotropy (PSA) and double magnetic tunnel junctions (DMTJs) offer practical solutions to downscale spin-transfer-torque Magnetic Random-Access Memory (STT-MRAM) beyond 20 nm technology nodes, while retaining their thermal stability ...
Trevor P. Almeida, Alvaro Palomino, Steven Lequeux, Victor Boureau, Olivier Fruchart, Ioan Lucian Prejbeanu, Bernard Dieny, David Cooper   +7 more
doaj   +1 more source

Integration of STT-MRAM model into CACTI simulator [PDF]

2014 9th International Design and Test Symposium (IDT), 2014
In the last decade, academies and private companies have actively explored emerging memory technologies. STT-MRAM in particular is experiencing a rapid development but it is facing several challenges in terms of performance and reliability. Several techniques at cell level have been proposed to mitigate such issues but currently few tools and ...
Indaco, M., DI CARLO, STEFANO, Vatajelu, E. I., PRINETTO, Paolo Ernesto, Arcaro, S., Pala, D.   +5 more
openaire   +2 more sources

A Nonvolatile Compute-in-Memory Macro Using Voltage-Controlled MRAM and In Situ Magnetic-to-Digital Converter

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2023
Compute-in-memory (CIM) accelerator has become a popular solution to achieve high energy efficiency for deep learning applications in edge devices. Recent works have demonstrated CIM macros using nonvolatile memories [spin transfer torque (STT)-MRAM and ...
Vinod Kurian Jacob, Jiyue Yang, Haoran He, Puneet Gupta, Kang L Wang, Sudhakar Pamarti   +5 more
doaj   +1 more source

Quantitative evaluation of reliability and performance for STT-MRAM [PDF]

2016 IEEE International Symposium on Circuits and Systems (ISCAS), 2016
Due to its non-volatility, high access speed, ultra low power consumption and unlimited writing/reading cycles, STT-MRAM (Spin Transfer Torque Magnetic Random Access Memory) has emerged as the most promising candidate for the next generation universal memory.
Zhang, Liuyang, Todri-Sanial, Aida, Kang, Wang, Zhang, Youguang, Torres, Lionel, Cheng, Yuanqing, Zhao, Weisheng   +6 more
openaire   +2 more sources

Read disturb fault detection in STT-MRAM [PDF]

2014 International Test Conference, 2014
Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) has potential to become a universal memory technology because of its various advantageous features such as high density, non-volatility, scalability, high endurance and CMOS compatibility.
Bishnoi, R., Ebrahimi, M., Oboril, F., Tahoori, M. B.   +3 more
openaire   +2 more sources

Generation of Probabilistic Bits by Exploiting Orthogonal Spin Currents in Magnetic Trilayers

Advanced Science, EarlyView.
Fe/Ti/CoFeB trilayers generate orthogonal spin currents that drive stochastic spin–orbit‐torque switching for probabilistic‐bit operation. The switching probability is continuously controlled by the in‐plane magnetic field and drive current, enabling tunable random bit generation.
Donghyeon Han, Chaehyeon Shin, Seok‐Jong Kim, Yunho Jang, Daekyu Koh, Taehwan Kim, Jaeheon Jung, Geon‐Woo Baek, Minseok Kang, Eunseok Kim, Geun‐Hee Lee, Jeongchun Ryu, Makoto Kohda, Junsaku Nitta, Kab‐Jin Kim, Jongsun Park, Kyung‐Jin Lee, Byong‐Guk Park   +17 more
wiley   +1 more source