Results 41 to 50 of about 491 (183)

The Evolution of Semiconductor Devices: From Transistors to Quantum and Neuromorphic Computing

physica status solidi (RRL) – Rapid Research Letters, Volume 20, Issue 8, August 2026.
This review presents the evolution of semiconductor devices from BJTs to fin field‐effect transistors (FinFETs), nanowire, and carbon nanotube transistors. It highlights emerging materials, including SiC and GaN, and examines neuromorphic and quantum computing, industry applications, performance benchmarks, challenges, and future directions.
Manoharan Subramanian, Mahalakshmi Balan, Ananthi Kaliyamoorthy, Esakki Muthu Sankaran, Govindaraj Vellingiri, Gianluca Gatto, Amit Kumar   +6 more
wiley   +1 more source

Multi-bit MRAM based high performance neuromorphic accelerator for image classification

Neuromorphic Computing and Engineering
Binary neural networks (BNNs) are the most efficient solution to bridge the design gap of the hardware implementation of neural networks in a resource-constrained environment.
Gaurav Verma, Sandeep Soni, Arshid Nisar, Brajesh Kumar Kaushik   +3 more
doaj   +1 more source

Variations in Stochastic Magnetic Tunnel Junctions

physica status solidi (a), Volume 223, Issue 14, 22 July 2026.
This work presents a reproducible fabrication method for nanoscale stochastic magnetic tunnel junctions (s‐MTJs) using undercut‐assisted e‐beam lithography, end‐point‐controlled etching, and in situ passivation. The study identifies key variation sources, such as static characteristic variations in TMR, resistance, coercive field, and loop shift ...
Ki Hyuk Han, YongJin Kim, Deok Hyun Yun, Jeoung Ung Ahn, Cheol Jun Kim, Young‐Jun Nah, Min‐Gu Kang, Seokmin Hong, Hyun Cheol Koo, OukJae Lee   +9 more
wiley   +1 more source

Energy-efficient DSHE-MRAM-based in-memory computing for image segmentation [PDF]

APL Electronic Devices
Image segmentation approaches are among the crucial tasks in computer vision applications, such as object recognition, tracking, agriculture, autonomous vehicles, and medical imaging, relying heavily on deep learning neural networks (NN) for precise ...
Tanmoy Pramanik, Alok Kumar Shukla, Gaurav Verma, Amit Monga, Hemkant Nehete, Sandeep Soni   +5 more
doaj   +1 more source

Micromagnetic simulation of the temperature dependence of the switching energy barrier using string method assuming sidewall damages in perpendicular magnetized magnetic tunnel junctions

AIP Advances, 2020
The influence of magnetic damages at the sidewall of perpendicular magnetic tunnel junctions (p-MTJs), which are the core devices of spin-transfer-torque magnetoresistive random-access memory (STT-MRAM), is discussed based on the thermal stability factor,
Hiroshi Naganuma, Hideo Sato, Shoji Ikeda, Tetsuo Endoh   +3 more
doaj   +1 more source

Integrated Field‐Free SOT Domain‐Wall Synapses and MTJ Stochastic Neurons for Hardware Boltzmann Machines

Advanced Functional Materials, Volume 36, Issue 61, 30 July 2026.
Field‐free spin‐orbit torque domain‐wall synapses integrated with stochastic MTJ neurons enable compact hardware Boltzmann machines. Leveraging intrinsic stochasticity and multi‐level conductance, the system achieves efficient probabilistic learning with high accuracy, demonstrating a scalable spintronic platform for energy‐efficient edge AI.
Aijaz H. Lone, Meng Tang, Camelia Florica, Bin He, Jingkai Xu, Selma Amara, Georgian Melinte, Xixiang Zhang, Gianluca Setti   +8 more
wiley   +1 more source

Research progresses on switching mechanism and advanced electrical characterizations of magnetic random access memory

Gongneng cailiao yu qijian xuebao
To address the energy efficiency and data throughput limitations of the Von Neumann architecture, computing-in-memory (CIM) systems based on spiking neural networks (SNNs) impose rigorous demands on the performance of non-volatile memory technologies ...
Xiaoqian MA, Shifan GAO, Yiming QU
doaj   +1 more source

Temperature‐Resilient Reconfigurable Physical Unclonable Function Driven by Pulse Modulation Using CMOS‐Integrated Spintronic Chips

Advanced Science, Volume 13, Issue 37, 3 July 2026.
A reconfigurable physical unclonable function is developed using CMOS‐integrated SOT‐MRAM chips, leveraging a dual‐pulse strategy and offering enhanced environmental robustness. A temperature‐compensation effect arising from the CMOS transistor and SOT‐MTJ is revealed and established as a key prerequisite for thermal resilience.
Min Wang, Chuanpeng Jiang, Zhaohao Wang, Zhengyi Hou, Zhongkui Zhang, Yuanfu Zhao, Hong‐xi Liu, Weisheng Zhao   +7 more
wiley   +1 more source

A Radiation-Hardened Triple Modular Redundancy Design Based on Spin-Transfer Torque Magnetic Tunnel Junction Devices

Applied Sciences
Integrated circuits suffer severe deterioration due to single-event upsets (SEUs) in irradiated environments. Spin-transfer torque magnetic random-access memory (STT-MRAM) appears to be a promising candidate for next-generation memory as it shows ...
Shubin Zhang, Peifang Dai, Ning Li, Yanbo Chen   +3 more
doaj   +1 more source

Topological Materials and Related Applications

Advanced Electronic Materials, Volume 12, Issue 13, 6 July 2026.
This review covers topological materials—including topological insulators, quantum valley Hall and quantum spin Hall insulators, and topological Weyl and Dirac semimetals—as well as their most recent advancements in fields such as spintronics, electronics, photonics, thermoelectrics, and catalysis.
Carlo Grazianetti, Roberto Mantovan, Emanuele Longo, Harold J. W. Zandvliet, Pantelis Bampoulis, Yu Pan, Fan Li, Xia Wang, Payton Downey, Alessandro Molle   +9 more
wiley   +1 more source