Results 41 to 50 of about 16,817 (212)

Generation of Probabilistic Bits by Exploiting Orthogonal Spin Currents in Magnetic Trilayers

Advanced Science, EarlyView.
Fe/Ti/CoFeB trilayers generate orthogonal spin currents that drive stochastic spin–orbit‐torque switching for probabilistic‐bit operation. The switching probability is continuously controlled by the in‐plane magnetic field and drive current, enabling tunable random bit generation.
Donghyeon Han, Chaehyeon Shin, Seok‐Jong Kim, Yunho Jang, Daekyu Koh, Taehwan Kim, Jaeheon Jung, Geon‐Woo Baek, Minseok Kang, Eunseok Kim, Geun‐Hee Lee, Jeongchun Ryu, Makoto Kohda, Junsaku Nitta, Kab‐Jin Kim, Jongsun Park, Kyung‐Jin Lee, Byong‐Guk Park   +17 more
wiley   +1 more source

Design of a full 1Mb STT-MRAM based on advanced FDSOI technology

MATEC Web of Conferences, 2017
In one hand, the shrinking of CMOS technology nodes is dramatically increasing the leakage current in integrated circuits. In the other hand, modern portable devices first concern is power-efficiency to insure a better autonomy.
Jabeur Kotb, Prenat Guillaume
doaj   +1 more source

Enabling a reliable STT-MRAM main memory simulation [PDF]

, 2017
STT-MRAM is a promising new memory technology with very desirable set of properties such as non-volatility, byte-addressability and high endurance. It has the potential to become the universal memory that could be incorporated to all levels of memory ...
Radojković, Petar, Petar Radojković, Sánchez Verdejo, Rommel, Asifuzzaman, Kazi, Sánchez-Verdejo, Rommel, Rommel Sánchez Verdejo, Kazi Asifuzzaman   +6 more
core   +1 more source

Electrical TCAD Simulation of STT-MRAMs

2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
In this paper, we propose to develop a full TCAD simulation, using a commercial tool (Sentaurus), of an STT-MRAM device to better understand its electrical behavior. To our knowledge, it is the first time that a simulated I-V hysteresis loop is calibrated on experimental data.
Saifi, Hanane, Postel-Pellerin, Jérémy, Yazigy, Nicole, Couzi, Noémie, Marca, Vincenzo, Canet, Pierre, Caçoilo, Nuno, Di Pendina, Grégory, Sousa, Ricardo   +8 more
openaire   +2 more sources

Van der Waals Heterostructures for Next‐Generation Spintronics: Multiferroic‐Mediated Magnetoelectric Properties

Advanced Science, EarlyView.
As CMOS technology approaches fundamental energy limits, new paradigms for low‐power information processing are required. Magnetic systems are attractive for their spin transport, yet current‐induced magnetization control is energy inefficient. Multiferroic heterostructures enable energy‐efficient electric field manipulation of magnetism.
Donghyeon Lee, Jiwoong Yang, Inhyeok Oh, Sanghan Lee   +3 more
wiley   +1 more source

Multi-level resistance uniformity of double pinned perpendicular magnetic-tunnel-junction spin-valve depending on top MgO barrier thickness

AIP Advances, 2020
In order to utilize perpendicular spin-torque-transfer magnetic-random-access-memory (p-STT MRAM) as a storage class memory, the achievement of performing multi-level-cell (MLC) operation is important in increasing the integration density of p-STT MRAM ...
Han-Sol Jun, Jin-Young Choi, Kei Ashiba, Sun-Hwa Jung, Miri Park, Jong-Ung Baek, Tae-Hun Shim, Jea-Gun Park   +7 more
doaj   +1 more source

People Counting and Positioning Using Low‐Resolution Infrared Images for FeFET‐Based In‐Memory Computing

Advanced Electronic Materials, EarlyView.
In this work, low‐resolution infrared imaging is combined with a 28 nm FeFET IMC architecture to enable compact, energy‐efficient edge inference. MLC FeFET devices are experimentally characterized, and controlled multi‐level current accumulation is validated at crossbar array level.
Alptekin Vardar, Li Zhang, Alexander Rehmer, Marc Lupp, Subhashree Baskaran, Osama Abdelaal, Franz Müller, Nandakishor Yadav, Bing Li, Thomas Kämpfe   +9 more
wiley   +1 more source

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

Stochastic‐MTJ Sampler Arrays for In‐Array Monte–Carlo Estimation

Advanced Electronic Materials, EarlyView.
A low‐energy‐barrier magnetic tunnel junction array is operated as a probability‐domain sampler: each cell's random switching, programmed through a shared digital‐to‐analog converter, makes the per‐column multiply–accumulate an unbiased Monte–Carlo expectation estimator that returns both a mean and a calibrated uncertainty.
Ran Zhang, Nellie Laleni, Sina Ranjbar, Andreas Tsiougkos, Nandakishor Yadav, Vasilis Pavlidis, Thomas Kämpfe   +6 more
wiley   +1 more source

Reconfigurable Ternary Logic‐In‐Memory With Organic Antiambipolar Transistor

Advanced Electronic Materials, EarlyView.
We develop a ternary logic‐in‐memory with an organic antiambipolar transistor combining a ternary inverter and ternary nonvolatile memory in the same circuit. The memory function of the circuit enables electrical reconfiguration to obtain standard, negative, and positive ternary inverters in the same device.
Ryoma Hayakawa, Taiga Kijima, Yuho Yamamoto, Yoichi Yamada, Yutaka Wakayama   +4 more
wiley   +1 more source