Results 51 to 60 of about 12,742 (221)

Evaluation of STT-MRAM main memory for HPC and real-time systems [PDF]

, 2019
It is questionable whether DRAM will continue to scale and will meet the needs of next-generation systems. Therefore, significant effort is invested in research and development of novel memory technologies. One of the candidates for nextgeneration memory
Asifuzzaman, Kazi
core   +1 more source

Field‐free programmable bipolar magnetic heterostructures for neuromorphic computing

InfoMat, Volume 8, Issue 5, May 2026.
Neuromorphic computing mimics the brain's efficiency, yet typical memristors lack biological synapses' dual signal control. We introduce a magnetic memristor enabling bidirectional, multi‐state modulation without external fields, validated in image feature extraction and neural clustering.
Yaping He, Gaofei Wang, Jinfeng Zhai, Wentao Huang, Zhenyu Zhao, Zheng Zhang, Jiabin Shen, Pan He, Zengguang Cheng, Peng Zhou   +9 more
wiley   +1 more source

Reliability and performance evaluation for STT-MRAM under temperature variation

, 2016
International audienceSpin transfer torque magnetic random access memory (STT-MRAM) is a potential candidate for next generation universal memory technology, which possesses the high density and cost benefits of DRAM, the high access speed of SRAM, the ...
Zhang, Youguang, Weisheng Zhao, Wang Kang, Torres, Lionel, Cheng, Yuanqing, Lionel Torres, Aida Todri-Sanial, Kang, Wang, Zhang, Liuyang, Liuyang Zhang, Youguang Zhang, Zhao, Weisheng, Todri-Sanial, Aida, Yuanqing Cheng   +13 more
core   +1 more source

Correlation between 1064 nm laser attack and thermal behavior in STT-MRAM

, 2023
International audienceIn this paper, the impact of a 1064 nm laser attack on an STT-MRAM cell is experimentally studied in real-time, for the first time, during reading and writing operations, in order to understand the behavior of a sensing circuit ...
J. Postel-Pellerin, Postel-Pellerin, J., G. Di Pendina, Sousa, R.C., P. Canet, Di Pendina, G., Della Marca, V., Yazigy, Nicole, Canet, Pierre, V. Della Marca, R.C. Sousa, N. Yazigy   +11 more
core   +1 more source

Evaluation of embedded STT-MRAM for Ultra Low Power applications

, 2019
National audienceThe complexity of embedded devices increases as today's applications request always more services. However, the power consumption of SoC has significantly increased due to the high-density integration and the high leakage power of ...
Patrigeon, Guillaume, Benoit, Pascal, Torres, Lionel   +2 more
core   +1 more source

Recent Advances in Spin–Orbit Torque‐Based Programmable Spin Logic Devices: Toward Flexible Implementations

Rare Metals, Volume 45, Issue 5, May 2026.
ABSTRACT The rapid expansion of data‐intensive applications has highlighted the fundamental limitations of traditional CMOS‐based von Neumann architectures, particularly in terms of power efficiency, latency, and flexibility. Spin logic devices utilizing spin–orbit torque (SOT) present a promising pathway for nonvolatile, low‐power, and in‐memory ...
Ke‐Yi Wu, Bin Lao, Xuan Zheng, Ya‐Min Han, Run‐Wei Li, Zhi‐Ming Wang   +5 more
wiley   +1 more source

Multi-bit MRAM based high performance neuromorphic accelerator for image classification

Neuromorphic Computing and Engineering
Binary neural networks (BNNs) are the most efficient solution to bridge the design gap of the hardware implementation of neural networks in a resource-constrained environment.
Gaurav Verma, Sandeep Soni, Arshid Nisar, Brajesh Kumar Kaushik   +3 more
doaj   +1 more source

Energy-efficient DSHE-MRAM-based in-memory computing for image segmentation [PDF]

APL Electronic Devices
Image segmentation approaches are among the crucial tasks in computer vision applications, such as object recognition, tracking, agriculture, autonomous vehicles, and medical imaging, relying heavily on deep learning neural networks (NN) for precise ...
Tanmoy Pramanik, Alok Kumar Shukla, Gaurav Verma, Amit Monga, Hemkant Nehete, Sandeep Soni   +5 more
doaj   +1 more source

Micromagnetic simulation of the temperature dependence of the switching energy barrier using string method assuming sidewall damages in perpendicular magnetized magnetic tunnel junctions

AIP Advances, 2020
The influence of magnetic damages at the sidewall of perpendicular magnetic tunnel junctions (p-MTJs), which are the core devices of spin-transfer-torque magnetoresistive random-access memory (STT-MRAM), is discussed based on the thermal stability factor,
Hiroshi Naganuma, Hideo Sato, Shoji Ikeda, Tetsuo Endoh   +3 more
doaj   +1 more source

Tailoring Magnetic Skyrmion Dimensions via Precise Interface Roughness Modulation in W‐Inserted Skyrmion SOT Channel Grown on β‐Phase W Seed Layer

Advanced Electronic Materials, Volume 12, Issue 8, 20 April 2026.
A novel skyrmion‐based SOT‐MRAM architecture is proposed by vertically integrating a p‐MTJ spin‐valve onto an SOT channel. Precise modulation of the interface roughness is found to govern the perpendicular magnetic anisotropy(PMA) and effective anisotropy energy.
Yohan Choi, Sang‐Min Kim, Heonhwan Yeo, Yeonsoo Shin, Min‐cheol Kim, Jae‐Kyeong Kim, Tae‐Hun Shim, Jin‐Sub Park, Jea‐Gun Park   +8 more
wiley   +1 more source