Results 51 to 60 of about 491 (183)

2D Magnetic and Topological Quantum Materials and Devices for Ultralow Power Spintronics

Advanced Functional Materials, Volume 36, Issue 44, 1 June 2026.
2D magnets and topological quantum materials enable ultralow‐power spintronics by combining robust magnetic order with symmetry‐protected, Berry‐curvature‐driven transport. Fundamentals of 2D anisotropy and spin‐orbit‐coupling induced band inversion are linked to scalable growth and vdW stacking.
Brahmdutta Dixit, Yifei Yang, Shawn Li, Yu‐Chia Chen, Qi Jia, Jian‐Ping Wang   +5 more
wiley   +1 more source

Radio-frequency assisted switching in perpendicular magnetic tunnel junctions

npj Spintronics
Spin-transfer torque magnetic random-access memory (STT-MRAM) relies on nanoscale magnetic tunnel junctions (MTJs) as its fundamental building blocks. Next-generation STT-MRAM requires strategies that simultaneously improve switching energy efficiency ...
Mark Hayward, Salvatore Perna, Massimiliano d’Aquino, Claudio Serpico, Wonjoon Jung, Chunhui Dai, Patrick M. Braganca, Ilya N. Krivorotov   +7 more
doaj   +1 more source

Multi-Retention STT-MRAM Architectures for IoT: Evaluating the Impact of Retention Levels and Memory Mapping Schemes

IEEE Access
In recent years, the energy consumption of IoT edge nodes has significantly increased due to the communication process. This necessitates the need to offload more computation to the edge nodes to minimize data transmission over the network.
Belal Jahannia, Seyed Ali Ghasemi, Hamed Farbeh   +2 more
doaj   +1 more source

Design and Evaluation of a 28-nm FD-SOI STT-MRAM for Ultra-Low Power Microcontrollers

IEEE Access, 2019
The complexity of embedded devices increases as today's applications request always more services. However, the power consumption of systems-on-chip has significantly increased due to the high-density integration and the high leakage power of current ...
Guillaume Patrigeon, Pascal Benoit, Lionel Torres, Sophiane Senni, Guillaume Prenat, Gregory Di Pendina   +5 more
doaj   +1 more source

Field‐free programmable bipolar magnetic heterostructures for neuromorphic computing

InfoMat, Volume 8, Issue 5, May 2026.
Neuromorphic computing mimics the brain's efficiency, yet typical memristors lack biological synapses' dual signal control. We introduce a magnetic memristor enabling bidirectional, multi‐state modulation without external fields, validated in image feature extraction and neural clustering.
Yaping He, Gaofei Wang, Jinfeng Zhai, Wentao Huang, Zhenyu Zhao, Zheng Zhang, Jiabin Shen, Pan He, Zengguang Cheng, Peng Zhou   +9 more
wiley   +1 more source

Materials Requirements of High-Speed and Low-Power Spin-Orbit-Torque Magnetic Random-Access Memory

IEEE Journal of the Electron Devices Society, 2020
As spin-orbit-torque magnetic random-access memory (SOT-MRAM) is gathering great interest as the next-generation low-power and high-speed on-chip cache memory applications, it is critical to analyze the magnetic tunnel junction (MTJ) properties needed to
Xiang Li, Shy-Jay Lin, Mahendra Dc, Yu-Ching Liao, Chengyang Yao, Azad Naeemi, Wilman Tsai, Shan X. Wang   +7 more
doaj   +1 more source

Recent Advances in Spin–Orbit Torque‐Based Programmable Spin Logic Devices: Toward Flexible Implementations

Rare Metals, Volume 45, Issue 5, May 2026.
ABSTRACT The rapid expansion of data‐intensive applications has highlighted the fundamental limitations of traditional CMOS‐based von Neumann architectures, particularly in terms of power efficiency, latency, and flexibility. Spin logic devices utilizing spin–orbit torque (SOT) present a promising pathway for nonvolatile, low‐power, and in‐memory ...
Ke‐Yi Wu, Bin Lao, Xuan Zheng, Ya‐Min Han, Run‐Wei Li, Zhi‐Ming Wang   +5 more
wiley   +1 more source

Tailoring Magnetic Skyrmion Dimensions via Precise Interface Roughness Modulation in W‐Inserted Skyrmion SOT Channel Grown on β‐Phase W Seed Layer

Advanced Electronic Materials, Volume 12, Issue 8, 20 April 2026.
A novel skyrmion‐based SOT‐MRAM architecture is proposed by vertically integrating a p‐MTJ spin‐valve onto an SOT channel. Precise modulation of the interface roughness is found to govern the perpendicular magnetic anisotropy(PMA) and effective anisotropy energy.
Yohan Choi, Sang‐Min Kim, Heonhwan Yeo, Yeonsoo Shin, Min‐cheol Kim, Jae‐Kyeong Kim, Tae‐Hun Shim, Jin‐Sub Park, Jea‐Gun Park   +8 more
wiley   +1 more source

Multi-Port 1R1W Transpose Magnetic Random Access Memory by Hierarchical Bit-Line Switching

IEEE Access, 2019
Emerging Magnetic Random-Access Memory (MRAM) has shown a great potential to replace Static-RAM (SRAM) and Dynamic-RAM (DRAM) in the working memories including Cache and main memory. MRAM benefits from its high-density, fast speed, low standby power, and
Liang Chang, Zhaohao Wang, Youguang Zhang, Weisheng Zhao   +3 more
doaj   +1 more source

Flexible Memory: Progress, Challenges, and Opportunities

Advanced Intelligent Discovery, Volume 2, Issue 2, April 2026.
Flexible memory technology is crucial for flexible electronics integration. This review covers its historical evolution, evaluates rigid systems, proposes a flexible memory framework based on multiple mechanisms, stresses material design's role, presents a coupling model for performance optimization, and points out future directions.
Ruizhi Yuan, Sen Chen, Minghui Guo, Ziliang Cui, Yujie Du, Jing Liu   +5 more
wiley   +1 more source