Results 71 to 80 of about 17,853 (211)

Toward Capacitive In‐Memory‐Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware

Advanced Intelligent Discovery, Volume 2, Issue 5, October 2026.
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj, Ella Paasio, Sayani Majumdar   +2 more
wiley   +1 more source

Novel Self-timing Speculative Writing for Unreliable STT-MRAM

, 2020
International audienceConsidering the insatiable demand for emerging embedded non-volatile memory (NVM), spin-transfer torque magnetic random access memory (STT-MRAM) can be configured with high access speed, readily hybrid integration and guaranteed ...
Cai, Hao, Zhang, Meng-Di, Naviner, Lirida   +2 more
core   +1 more source

Correlation power analysis attack against STT-MRAM based cyptosystems [PDF]

, 2017
Emerging technologies such as Spin-transfer torque magnetic random-access memory (STT-MRAM) are considered potential candidates for implementing low-power, high density storage systems.
Ankit Mondal, Ankur Srivastava, Abhishek Chakraborty   +2 more
core   +2 more sources

Deterministic Precessional MRAM With Low Write Error Rate: Fokker-Planck Modeling and Design Optimization

IEEE Journal of the Electron Devices Society
Magnetoresistive memory has matured into a commercially viable technology, with current-controlled spin-transfer torque (STT) MRAM serving as an industry standard for spintronics due to its good performance metrics and compatibility with silicon ...
Stanislav Sin, Saeroonter Oh
doaj   +1 more source

Device‐to‐System Perspectives on Scalable Ising Machines for Physics‐Driven Computing

Advanced Quantum Technologies, Volume 9, Issue 10, October 2026.
Emerging‐device‐based Ising machines exploit conductance programmability, intrinsic stochasticity, and oscillator dynamics as physical primitives for combinatorial optimization. This review establishes a device‐to‐system framework linking these physical properties to computational functions and crossbar‐based, stochastic p‐bit, and oscillator‐based ...
Sangwook Youn, Hwiho Hwang, Jaeung Lee, Heesu Seo, Hyungjin Kim   +4 more
wiley   +1 more source

System Level Exploration of a STT-MRAM based Level 1 Data-Cache

, 2015
Since Non-Volatile Memory (NVM) technologies are being explored extensively nowadays as viable replacements for SRAM based memories in LLCs and even L2 caches, we try to take stock of their potential as level 1 (L1) data caches.
Gómez Pérez, José Ignacio, Tirado Fernández, José Francisco, Catthoor, Francky, Tenllado Van Der Reijden, Christian Tomás, Komalan, Manu Perumkunnil, Christian Tenllado, José Ignacio Gómez Pérez, Manu Perumkunnil Komalan, Francisco Tirado Fernández, Francky Catthoor   +9 more
core   +1 more source

Multi-Port 1R1W Transpose Magnetic Random Access Memory by Hierarchical Bit-Line Switching

IEEE Access, 2019
Emerging Magnetic Random-Access Memory (MRAM) has shown a great potential to replace Static-RAM (SRAM) and Dynamic-RAM (DRAM) in the working memories including Cache and main memory. MRAM benefits from its high-density, fast speed, low standby power, and
Liang Chang, Zhaohao Wang, Youguang Zhang, Weisheng Zhao   +3 more
doaj   +1 more source

Selective Tuning of Perpendicular Magnetic Anisotropy and Dzyaloshinskii–Moriya Interaction in Heterostructures Compatible with Magnetic Tunnel Junctions

Advanced Electronic Materials, Volume 12, Issue 18, 21 September 2026.
ABSTRACT Chirally coupled magnetic tunnel junctions (MTJs) have been proposed as a route toward compact spin logic architectures. Micromagnetic simulations indeed show that chiral coupling between adjacent MTJs with perpendicular magnetic anisotropy (PMA) can be achieved through an in‐plane (IP) interconnection mediated by the Dzyaloshinskii–Moriya ...
Bob Vermeulen, Seongbin Seo, Domenico Giuliano, Jyotirmoy Chatterjee, Giacomo Talmelli, Robert Carpenter, Yann Canvel, Yanan Li, Björn Heinz, Philipp Pirro, Bart Sorée, Kristiaan Temst, Van Dai Nguyen, Gouri Sankar Kar, Siddharth Rao   +14 more
wiley   +1 more source

Neuromorphic Hardware Materials for Intelligent Artificial Perception and Multimodal Fusion: From Sensing to Cognition

Interdisciplinary Materials, Volume 5, Issue 5, Page 699-727, September 2026.
Neuromorphic hardware enables the integration of sensing, memory, and computing for intelligent artificial perception. Recent advances in multimodal fusion further highlight its potential for embodied intelligence and next‐generation human–machine interfaces.
Yixin Zhu, Yuqing Hu, Changjin Wan, Qing Wan   +3 more
wiley   +1 more source

Towards Efficient SOT-Assisted STT-MRAM Cell Switching Using Reinforcement Learning

Nonvolatile memory is a promising candidate to replace CMOS devices with the two most common magnetoresistive RAM (MRAM) cell types being spin-transfer torque (STT-)MRAM and spin-orbit torque (SOT-)MRAM.
Sverdlov, Viktor, Gös, Wolfgang, Lacerda de Orio, Roberto, Ender, Johannes   +3 more
core   +1 more source