Results 71 to 80 of about 16,817 (212)
Variations in Stochastic Magnetic Tunnel Junctions
physica status solidi (a), Volume 223, Issue 14, 22 July 2026.This work presents a reproducible fabrication method for nanoscale stochastic magnetic tunnel junctions (s‐MTJs) using undercut‐assisted e‐beam lithography, end‐point‐controlled etching, and in situ passivation. The study identifies key variation sources, such as static characteristic variations in TMR, resistance, coercive field, and loop shift ...
Ki Hyuk Han +9 more
wiley +1 more source
IEEE Journal of the Electron Devices SocietyMagnetoresistive memory has matured into a commercially viable technology, with current-controlled spin-transfer torque (STT) MRAM serving as an industry standard for spintronics due to its good performance metrics and compatibility with silicon ...
Stanislav Sin, Saeroonter Oh
doaj +1 more source
Advanced Functional Materials, Volume 36, Issue 61, 30 July 2026.Field‐free spin‐orbit torque domain‐wall synapses integrated with stochastic MTJ neurons enable compact hardware Boltzmann machines. Leveraging intrinsic stochasticity and multi‐level conductance, the system achieves efficient probabilistic learning with high accuracy, demonstrating a scalable spintronic platform for energy‐efficient edge AI.
Aijaz H. Lone +8 more
wiley +1 more source
Throughput-Efficient Network-on-Chip Router Design with STT-MRAM [PDF]
, 2013 As the number of processor cores on a chip increases with the advance of CMOS technology, there has been a growing need of more efficient Network-on-Chip (NoC) design since communication delay has become a major bottleneck in large-scale multicore ...
Narayana, Sagar 1986-
core +1 more source
Towards reliability of SNNs: defect implementation on STT-MRAM cell
, 2021 International audienceSpiking Neural Networks (SNNs) are being widely studied to mimic the intelligence of biological brains. In hardware level, multiple emerging non-volatile memories (NVM) are proposed to model the neural synapses, one of them being ...
Vatajelu, Elena, Ioana +1 more
core +2 more sources
Multi-Port 1R1W Transpose Magnetic Random Access Memory by Hierarchical Bit-Line Switching
IEEE Access, 2019 Emerging Magnetic Random-Access Memory (MRAM) has shown a great potential to replace Static-RAM (SRAM) and Dynamic-RAM (DRAM) in the working memories including Cache and main memory. MRAM benefits from its high-density, fast speed, low standby power, and
Liang Chang +3 more
doaj +1 more source
Topological Materials and Related Applications
Advanced Electronic Materials, Volume 12, Issue 13, 6 July 2026.This review covers topological materials—including topological insulators, quantum valley Hall and quantum spin Hall insulators, and topological Weyl and Dirac semimetals—as well as their most recent advancements in fields such as spintronics, electronics, photonics, thermoelectrics, and catalysis.
Carlo Grazianetti +9 more
wiley +1 more source
IEEE Journal on Exploratory Solid-State Computational Devices and CircuitsThis work presents an analog computing-in-memory (CiM) macro with spin-transfer torque magnetic random access memory (STT-MRAM) and 28-nm CMOS technology.
Xianggao Wang +4 more
doaj +1 more source
IEEE AccessAs applications using deep neural networks (DNNs) are increasingly deployed on mobile devices, researchers are exploring various methods to achieve low energy consumption and high performance. Recently, advances in STT-MRAM have shown promise in offering
Munhyung Lee +3 more
doaj +1 more source
A Timing-Based Split-Path Sensing Circuit for STT-MRAM. [PDF]
Micromachines (Basel), 2022 Ishdorj B, Kim J, Kim JH, Na T.
europepmc +1 more source