Results 81 to 90 of about 17,853 (211)

Research progress and challenges of the self-heating effect in STT-MRAM devices

Gongneng cailiao yu qijian xuebao
This paper present a systematic review of recent research progress and outstanding challenges related to the self-heating effect (SHE) in spin-transfer torque magnetic random-access memory (STT-MRAM) devices.
Zhangsheng LAN, Saike ZHU, Shifan GAO, Yiming QU   +3 more
doaj   +1 more source

Accuracy Improvement With Weight Mapping Strategy and Output Transformation for STT-MRAM-Based Computing-in-Memory

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
This work presents an analog computing-in-memory (CiM) macro with spin-transfer torque magnetic random access memory (STT-MRAM) and 28-nm CMOS technology.
Xianggao Wang, Na Wei, Shifan Gao, Wenhao Wu, Yi Zhao   +4 more
doaj   +1 more source

Impact of a laser pulse on a STT-MRAM bitcell: security and reliability issues

, 2018
International audienceThe Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) has been identified, by the International Technology Roadmap for Semiconductors (ITRS), as one of the most promising emerging technology.
Delattre, R., Sousa, R., Wacquez, R., Portal, M., Di Pendina, G., Aboulkassimi, D., J. -M. Portal, R. Wacquez, J. Postel-Pellerin, R. Delattre, Postel-Pellerin, J., D. Aboulkassimi, G. Di Pendina, Bocquet, Marc, M. Kharbouche-Harrari, M. Bocquet, R. Sousa, Kharbouche-Harrari, M.   +17 more
core   +1 more source

A Timing-Based Split-Path Sensing Circuit for STT-MRAM. [PDF]

Micromachines (Basel), 2022
Ishdorj B, Kim J, Kim JH, Na T.
europepmc   +1 more source

Enhancing On-Device DNN Inference Performance With a Reduced Retention-Time MRAM-Based Memory Architecture

IEEE Access
As applications using deep neural networks (DNNs) are increasingly deployed on mobile devices, researchers are exploring various methods to achieve low energy consumption and high performance. Recently, advances in STT-MRAM have shown promise in offering
Munhyung Lee, Taehan Lee, Junwon Yeo, Hyukjun Lee   +3 more
doaj   +1 more source

MODELING OF MTJ AND ITS VALIDATION USING NANOSCALE MRAM BITCELL [PDF]

Journal of Engineering Science and Technology, 2017
Magnetic Tunnel Junction (MTJ) is a promising candidate for nonvolatile and low power memory design. MTJ is basic building block of STT-MRAM bitcell.
CHANDRAMAULESHWAR ROY, ARUNDHATI BHATTACHARYA, A. ISLAM   +2 more
doaj  

Investigation of PVT-Aware STT-MRAM Sensing Circuits for Low-VDD Scenario. [PDF]

Micromachines (Basel), 2021
Bian Z, Hong X, Guo Y, Naviner L, Ge W, Cai H.   +5 more
europepmc   +1 more source

Study of Self-Heating and its Effects in SOT-STT-MRAM

, 2023
We fully couple magnetization, charge, spin, and temperature dynamics to study the switching of the combined spin-orbit torque (SOT) - spin-transfer torque (STT) magne-toresistive random access memory (MRAM). To account for the increased temperature, the
Selberherr, Siegfried; orcid:, Jorstad, Nils Petter, Sverdlov, Viktor, Hadamek, Tomas, Goes, Wolfgang   +4 more
core   +1 more source

A novel SRAM -STT-MRAM hybrid cache implementation improving cache performance

, 2017
International audienceMemories are currently a real bottleneck to design high speed and energy-efficient systems-on-chip. A significant increase of the performance gap between processors and memories is observed.
Coi, Odilia, Patrigeon, Guillaume, Senni, Sophiane, Sophiane Senni, Benoit, Pascal, Torres, Lionel, Odilia Coi, Pascal Benoit, Guillaume Patrigeon, Lionel Torres   +9 more
core   +1 more source

Standby magnetic immunity calculator for STT-MRAM [PDF]

AIP Advances
This work investigates the impact of external magnetic fields, field orientation, temperature, and exposure time on the standby magnetic immunity (SMI) of spin-transfer torque magnetoresistive random-access memory. Wafer-level measurements were performed
A. Talapatra, F. Schlaphof, P. Scharf, M. Mansueto, D. Sanchez Hazen, J. Müller, S. Soss, A. Zaka   +7 more
doaj   +1 more source