Results 81 to 90 of about 16,817 (212)

Evaluation of STT-MRAM main memory for HPC and real-time systems [PDF]

, 2019
It is questionable whether DRAM will continue to scale and will meet the needs of next-generation systems. Therefore, significant effort is invested in research and development of novel memory technologies. One of the candidates for nextgeneration memory
Asifuzzaman, Kazi
core   +1 more source

Correlation between 1064 nm laser attack and thermal behavior in STT-MRAM

, 2023
International audienceIn this paper, the impact of a 1064 nm laser attack on an STT-MRAM cell is experimentally studied in real-time, for the first time, during reading and writing operations, in order to understand the behavior of a sensing circuit ...
J. Postel-Pellerin, Postel-Pellerin, J., G. Di Pendina, Sousa, R.C., P. Canet, Di Pendina, G., Della Marca, V., Yazigy, Nicole, Canet, Pierre, V. Della Marca, R.C. Sousa, N. Yazigy   +11 more
core   +1 more source

Research progress and challenges of the self-heating effect in STT-MRAM devices

Gongneng cailiao yu qijian xuebao
This paper present a systematic review of recent research progress and outstanding challenges related to the self-heating effect (SHE) in spin-transfer torque magnetic random-access memory (STT-MRAM) devices.
Zhangsheng LAN, Saike ZHU, Shifan GAO, Yiming QU   +3 more
doaj   +1 more source

MODELING OF MTJ AND ITS VALIDATION USING NANOSCALE MRAM BITCELL [PDF]

Journal of Engineering Science and Technology, 2017
Magnetic Tunnel Junction (MTJ) is a promising candidate for nonvolatile and low power memory design. MTJ is basic building block of STT-MRAM bitcell.
CHANDRAMAULESHWAR ROY, ARUNDHATI BHATTACHARYA, A. ISLAM   +2 more
doaj  

Investigation of PVT-Aware STT-MRAM Sensing Circuits for Low-VDD Scenario. [PDF]

Micromachines (Basel), 2021
Bian Z, Hong X, Guo Y, Naviner L, Ge W, Cai H.   +5 more
europepmc   +1 more source

Field-free spin–orbit torque switching in ferromagnetic trilayers at sub-ns timescales

Nature Communications
Current-induced spin torques enable the electrical control of the magnetization with low energy consumption. Conventional magnetic random access memory (MRAM) devices rely on spin-transfer torque (STT), this however limits MRAM applications because of ...
Qu Yang, Donghyeon Han, Shishun Zhao, Jaimin Kang, Fei Wang, Sung-Chul Lee, Jiayu Lei, Kyung-Jin Lee, Byong-Guk Park, Hyunsoo Yang   +9 more
doaj   +1 more source

Standby magnetic immunity calculator for STT-MRAM [PDF]

AIP Advances
This work investigates the impact of external magnetic fields, field orientation, temperature, and exposure time on the standby magnetic immunity (SMI) of spin-transfer torque magnetoresistive random-access memory. Wafer-level measurements were performed
A. Talapatra, F. Schlaphof, P. Scharf, M. Mansueto, D. Sanchez Hazen, J. Müller, S. Soss, A. Zaka   +7 more
doaj   +1 more source

Main memory organization trade-offs with DRAM and STT-MRAM options based on gem5-NVMain simulation frameworks

, 2018
Current main memory organizations in embedded and mobile application systems are DRAM dominated. The ever-increasing gap between today's processor and memory speeds makes the DRAM subsystem design a major aspect of computer system design.
Manu Komalan, Sophiane Senni, Gamatie, Abdoulaye, Furnemont, Arnaud, Torres, Lionel, Komalan, Manu, Catthoor, Francky, Matthias Hartmann, Novo, David, Kar, Gouri Sankar, Lionel Torres, Rock, Oh Hyung, David Novo, Hartmann, Matthias, Oh Hyung Rock, Francky Catthoor, Tenllado, Christian, Gómez, José Ignacio, Sushil Sakhare, Christian Tenllado, Gouri Sankar Kar, Sakhare, Sushi, Tenllado Van Der Reijden, Christian Tomás, Sakhare, Sushil, Abdoulaye Gamatie, Senni, Sophiane, Arnaud Furnemont, Kar, Gouri, Jose Ignacio Gomez, Gómez, José Ignacion   +29 more
core   +1 more source

Concealable and Field‐Free Physical Unclonable Function Based on Voltage‐Controlled Magnetic Tunnel Junctions

Advanced Electronic Materials
Physical unclonable functions (PUFs) leverage intrinsic stochastic variations of physical properties to generate secure cryptographic keys. Magnetic random‐access memory (MRAM) is a strong candidate for PUF implementations due to its high density ...
Thomas Neuner, Jaimin Kang, Jordan Athas, Christian Duffee, Noraica Davila Melendez, Jordan A. Katine, Pedram Khalili Amiri   +6 more
doaj   +1 more source

Impact of Technology Scaling and Back-End-of-the-Line Technology Solutions on Magnetic Random-Access Memories

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
While magnetic random-access memories (MRAMs) are promising because of their nonvolatility, relatively fast speeds, and high endurance, there are major challenges in adopting them for the advanced technology nodes.
Piyush Kumar, Da Eun Shim, Siri Narla, Azad Naeemi   +3 more
doaj   +1 more source