Editorial for the Topic on Magnetic Materials and Devices. [PDF]
Sverdlov V.
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Improving MRAM Performance with Sparse Modulation and Hamming Error Correction. [PDF]
Le N, Nguyen TA, Lee JH, Lee J.
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250 magnetic tunnel junctions-based probabilistic Ising machine. [PDF]
Yang S +6 more
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A Comprehensive Study of Temperature and Its Effects in SOT-MRAM Devices. [PDF]
Hadámek T +5 more
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A parallel magnetic tunnel junction-based probabilistic Ising processor for efficient quadratic optimization. [PDF]
Yang S +4 more
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Magnetic memory driven by spin splitting torque in nonrelativistic collinear antiferromagnet. [PDF]
Guo Y +24 more
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Manipulating transient SOT-MRAM switching dynamics for efficiency improvement and probabilistic switching. [PDF]
Nallan S, Zhu JG.
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Finite Element Approach for the Simulation of Modern MRAM Devices. [PDF]
Fiorentini S +7 more
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Quantitative separation of planar Nernst effects in harmonic Hall measurements of spin-orbit torques in Pt/Co/HfO/Ta multilayers. [PDF]
Yun C +8 more
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