Results 101 to 110 of about 16,817 (212)

Domain-Specific STT-MRAM-Based In-Memory Computing: A Survey

IEEE Access
In recent years, the rapid growth of big data and the increasing demand for high-performance computing have fueled the development of novel computing architectures.
Alaba Yusuf, Tosiron Adegbija, Dhruv Gajaria   +2 more
doaj   +1 more source

Addressing the Thermal Issues of STT-MRAM From Compact Modeling to Design Techniques

, 2018
International audienceSpin transfer torque magnetic random access memory (STT-MRAM) possesses many desirable properties such as nonvolatility, fast access speed, unlimited endurance, and good compatibility with CMOS fabrication process.
Zhang, Youguang, Wang, Kang, Weisheng Zhao, Wang Kang, Torres, Lionel, Cheng, Yuanqing, Lionel Torres, Aida Todri-Sanial, Zhang, Liuyang, Liuyang Zhang, Youguang Zhang, Todri-Sanial, Aida, Yuanqing Cheng   +12 more
core   +1 more source

Enhanced write margin of perpendicular MRAM cells using thick MgO cap layer

AIP Advances
Implementation of spin transfer torque magneto-resistive random access memory (STT-MRAM) in memory chips requires that the write margin of the MRAM cell, defined as the difference between breakdown voltage and write voltage for the specified endurance ...
G. Mihajlović, T. S. Santos, J. Li, J. A. Katine, M. K. Grobis   +4 more
doaj   +1 more source

Novel CPU cache architecture based on two-dimensional MTJ device with ferromagnetic Fe3GeTe2

AIP Advances
With the development of Artificial Intelligence (AI) in recent years, the fields of computer, biology, medicine, and aerospace have demanded higher requirements for the processing and storage of information.
Shaopu Han, Yanfeng Jiang
doaj   +1 more source

Enabling a reliable STT-MRAM main memory simulation

STT-MRAM is a promising new memory technology with very desirable set of properties such as non-volatility, byte-addressability and high endurance. It has the potential to become the universal memory that could be incorporated to all levels of memory ...
Radojković, Petar, Asifuzzaman, Kazi, Sánchez-Verdejo, Rommel   +2 more
core  

Simulation of SAF-Enhanced Multilayered STT-MRAM Structures

The reliability of multilayered spin-transfer torque magnetoresistive random access memory with synthetic antiferro-magnets is critical for applications such as computing-in-memory systems, high-performance computing, and high-density storage. This study
Selberherr, Siegfried; orcid:, Sverdlov, Viktor, Goes, Wolfgang, Bendra, Mario   +3 more
core   +1 more source

Towards Efficient SOT-Assisted STT-MRAM Cell Switching Using Reinforcement Learning

Nonvolatile memory is a promising candidate to replace CMOS devices with the two most common magnetoresistive RAM (MRAM) cell types being spin-transfer torque (STT-)MRAM and spin-orbit torque (SOT-)MRAM.
Sverdlov, Viktor, Gös, Wolfgang, Lacerda de Orio, Roberto, Ender, Johannes   +3 more
core   +1 more source

Switching 특성과 전압/온도 의존성을 고려한 STT-MTJ 매크로모델 제안과 새로운 STT-MRAM array architecture에 관한 연구

, 2016
Conventional semiconductor-based device approaches to technical and physical limitations as the technology node shrinks. Recently, spin-transfer torque-magnetoresistive random access memory (STT-MRAM) which is spintronics-based memory device has emerged ...
임혜인
core   +1 more source

Cryo-SIMPLY: A Reliable STT-MRAM-Based Smart Material Implication Architecture for In-Memory Computing. [PDF]

Nanomaterials (Basel)
Moposita T, Garzón E, Teman A, Lanuzza M.   +3 more
europepmc   +1 more source

Applied spintronics: From spin transport to spin-charge interconversion and emerging devices. [PDF]

Sci Adv
Bibes M, Gomonay O, Kuschel T, Sinova J, Weiler M, Fukami S, Kläui M.   +6 more
europepmc   +1 more source