Results 101 to 110 of about 17,853 (211)
npj SpintronicsThe performance and reliability of spin-transfer torque magnetic random-access memory (STT-MRAM) can be compromised by anomalous switching behavior, especially during high-speed operations.
Prosenjit Das +2 more
doaj +1 more source
Control of Sub-Nanosecond Precessional Magnetic Switching in STT-MRAM Cells for SRAM Applications
, 2016 International audienceSTT-MRAM are foreseen as the best contender forDRAM replacement. STT-MRAM could also be used for SRAMapplications if switching time below 1ns could be realized in areliable way.
B. Dieny +17 more
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, 2017 The magnetization switching driven by spin-transfer torque (STT) and Spin Hall effect (SHE) is the fundamental dynamics to design magnetic memories and spin-logic devices.
V. Puliafito +9 more
core +1 more source
Advanced Electronic MaterialsDouble‐pinned‐layer Magnetic Tunnel Junction (Double PL MTJ) enhances spin‐transfer‐torque magneto‐resistive random‐access memory (STT‐MRAM) performance by requiring anti‐parallel magnetization between both PLs at free layer interfaces and minimizing ...
Shujun Ye, Koichi Nishioka
doaj +1 more source
Domain-Specific STT-MRAM-Based In-Memory Computing: A Survey
IEEE AccessIn recent years, the rapid growth of big data and the increasing demand for high-performance computing have fueled the development of novel computing architectures.
Alaba Yusuf +2 more
doaj +1 more source
Improving the Performance of STT-MRAM LLC through Enhanced Cache Replacement Policy
, 2018 International audienceModern architectures adopt large on-chip cache memory hierarchies with more than two levels. While this improves performance, it has a certain cost in area and power consumption.
Bruguier, Florent +11 more
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Simulation of SAF-Enhanced Multilayered STT-MRAM Structures
The reliability of multilayered spin-transfer torque magnetoresistive random access memory with synthetic antiferro-magnets is critical for applications such as computing-in-memory systems, high-performance computing, and high-density storage. This study
Selberherr, Siegfried; orcid: +3 more
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Modelling and Circuit Design for STT-MRAM [PDF]
, 2015 This thesis presents three research contributions in the areas of modelling, circuit-level design, and device-level design of spin-transfer-torque magnetoresistive random access memory (STT-MRAM).
Vatankhahghadim, Aynaz
core
Enhanced write margin of perpendicular MRAM cells using thick MgO cap layer
AIP AdvancesImplementation of spin transfer torque magneto-resistive random access memory (STT-MRAM) in memory chips requires that the write margin of the MRAM cell, defined as the difference between breakdown voltage and write voltage for the specified endurance ...
G. Mihajlović +4 more
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Novel CPU cache architecture based on two-dimensional MTJ device with ferromagnetic Fe3GeTe2
AIP AdvancesWith the development of Artificial Intelligence (AI) in recent years, the fields of computer, biology, medicine, and aerospace have demanded higher requirements for the processing and storage of information.
Shaopu Han, Yanfeng Jiang
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