Results 121 to 130 of about 491 (183)
In-Sensor-Memory Computing for Post-Von Neumann Intelligence: A Perspective. [PDF]
Nanomicro LettTang H, Yu N, Min P, Guo R, Zhang G.
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Rethinking DRAM's Page Mode With STT-MRAM
IEEE Transactions on Computers, 2023Byoungchan Oh +5 more
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IEEE Transactions on Circuits and Systems II: Express Briefs, 2021
This brief presents a review of developments in spin-transfer-torque magnetoresistive random access memory (STT-MRAM) sensing over the past 20 years from a circuit design perspective. Various sensing schemes are categorized and described according to the data-cell variation-tolerant characteristics, pre-amplifiers, and offset tolerance.
Taehui Na +2 more
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This brief presents a review of developments in spin-transfer-torque magnetoresistive random access memory (STT-MRAM) sensing over the past 20 years from a circuit design perspective. Various sensing schemes are categorized and described according to the data-cell variation-tolerant characteristics, pre-amplifiers, and offset tolerance.
Taehui Na +2 more
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STT-MRAM for Automotive Applications
2021 IEEE 32nd Magnetic Recording Conference (TMRC), 2021There is a growing need for fast, endurant, non-volatile solutions for automotive that can meet the harsh requirements of automotive conditions. Automotive applications place severe demands memory devices. In the case of data retention, Automotive Grade 0 requires survival of T ambient 150 °C for 20 years with no loss in data integrity.
K. Nagel +5 more
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Mitigating Read Failures in STT-MRAM
2020 IEEE 38th VLSI Test Symposium (VTS), 2020Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) is an emerging non-volatile memory technology, as a leading candidate to replace conventional on-chip memories due to its various advantages such as high density, non-volatility, scalability, high endurance and CMOS compatibility.
Nair, S. M., Bishnoi, R., Tahoori, M. B.
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Monitoring Aging Defects in STT-MRAMs
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 2020Identifying manufacturing defects in magnetic tunnel junction (MTJ) device is crucial for the yield and reliability of spin-torque-transfer (STT) magnetic random-access memory (MRAM) arrays. Several of the MTJ defects result inparametric deviations of the device that deteriorate over time.
Govind Radhakrishnan +2 more
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Probabilistically Programmed STT-MRAM
IEEE Journal on Emerging and Selected Topics in Circuits and Systems, 2012Novel memory programming methods and corresponding memory structures are presented in this paper. Unlike conventional memory programming, this programming technique does not require deterministic switching of memory elements. This technique explicitly exploits the probabilistic switching characteristics of memory elements such as spin-transfer torque ...
Wenqing Wu +4 more
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Electrical Modeling of STT-MRAM Defects
2018 IEEE International Test Conference (ITC), 2018Spin-transfer-torque magnetic RAM (STT-MRAM) is one of the most promising emerging memory technologies. As various manufacturing vendors make significant efforts to push it to the market, appropriate STT-MRAM testing is of great importance. In this paper, we demonstrate that conventional STT-MRAM defect modeling, which is based on linear resistors, is ...
Lizhou Wu +4 more
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A Reconfigurable Arbiter PUF Based on STT-MRAM
2021 IEEE International Symposium on Circuits and Systems (ISCAS), 2021With the rapid development of the Internet of Things (IoT) infrastructure, electronic devices are becoming ubiquitous, in which authentication and secure communication are required. As a result, novel hardware security primitives have been developed to overcome the deficiencies of conventional security methods and address the growing security issues ...
Rashid Ali +6 more
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