Results 131 to 140 of about 491 (183)

A Parametric DFT Scheme for STT-MRAMs

IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2019
Process control and yield of spin torque transfer-magnetoresistive random access memory (STT-MRAM) array are of crucial importance in fabrication. While yield depends on the CMOS process variability, quality of the deposited MTJ film, and other process nonidealities, test platform can enable a parametric optimization and verification process using the ...
Govind Radhakrishnan, Youngki Yoon, Manoj Sachdev   +2 more
openaire   +1 more source

Exploiting STT-MRAM for approximate computing

2017 22nd IEEE European Test Symposium (ETS), 2017
Spin Transfer Torque Magnetic RAM (STT-MRAM) is an emerging non-volatile memory technology and a potential candidate to replace SRAM in processor caches. However, STT-MRAM suffers from a high write latency and high write energy consumption which have to be addressed for energy-efficient on-chip caches.
Sayed, Nour, Oboril, Fabian, Shirvanian, Azadeh, Bishnoi, Rajendra, Tahoori, Mehdi B.   +4 more
openaire   +2 more sources

Failure and reliability analysis of STT-MRAM

Microelectronics Reliability, 2012
Abstract Spin Transfer Torque Magnetic RAM (STT-MRAM) promises low power, great miniaturization prospective (e.g. 22 nm) and easy integration with CMOS process. It becomes actually a strong non-volatile memory candidate for both embedded and standalone applications.
Weisheng Zhao 0001, Yue Zhang 0010, Thibaut Devolder, Jacques-Olivier Klein, Dafine Ravelosona, Claude Chappert, Pascale Mazoyer   +6 more
openaire   +1 more source

STT-MRAM-Based Strong PUF Architecture

2015 IEEE Computer Society Annual Symposium on VLSI, 2015
Physically Unclonable Functions (PUFs) are emerging cryptographic primitives used to implement low-cost device authentication and secure secret key generation. Weak PUFs (i.e., devices able to generate a single signature or to deal with a limited number of challenges) and Strong PUFs (i.e., devices able to deal with multiple challenges) are widely ...
Vatajelu, Elena Ioana, Di Natale, Giorgio, Torres, Lionel, Prinetto, Paolo   +3 more
openaire   +1 more source

STT-MRAM-Based Reliable Weak PUF

IEEE Transactions on Computers, 2022
In recent years, micro-nano device characteristics like ferroelectrics and resistive switching are being used to build important security primitives such as Physical Unclonable Function (PUF). The micro-nano device-based hardware security primitives, although with higher security, energy efficiency, and integration density, suffer from serious ...
Yupeng Hu 0004, Linjun Wu, Zhuojun Chen, Yun Huang, Xiaolin Xu 0001, Keqin Li 0001, Jiliang Zhang 0002   +6 more
openaire   +1 more source

Security primitives (PUF and TRNG) with STT-MRAM

2016 IEEE 34th VLSI Test Symposium (VTS), 2016
The rapid development of low power, high density, high performance SoCs has pushed the embedded memories to their limits and opened the field to the development of emerging memory technologies. The Spin-Transfer-Torque Magnetic Random Access Memory (STT-MRAM) has emerged as a promising choice for embedded memories due to its reduced read/write latency ...
Vatajelu, Elena Ioana, Di Natale, Giorgio, Prinetto, Paolo   +2 more
openaire   +2 more sources

Reliability of Industrial grade Embedded-STT-MRAM

2020 IEEE International Reliability Physics Symposium (IRPS), 2020
Robust reliability of industrial grade (Tj: -40~125°C) was successfully demonstrated. The reliability items such as HTOL, retention and endurance test showed negligible fail bit count changes with ECC off mode even after accelerated stress conditions for 10yr user life time and come to zero with ECC on mode.
Yongsung Ji, Hyunjae Goo, Jungman Lim, Tae-Young Jeong, Taiki Uemura, Gun Rae Kim, Boil Seo, Seungbae Lee, Goeun Park, Jeongmin Jo, Sang-Il Han, Kilho Lee, Junghyuk Lee, Sohee Hwang, Daesop Lee, Suksoo Pyo, Hyun Taek Jung, Shinhee Han, Seungmo Noh, Kiseok Suh, Sungyoung Yoon, Hyeonwoo Nam, Hyewon Hwang, Hai Jiang 0005, J. W. Kim, D. Kwon, Yoonjong Song, K. H. Koh, Hwasung Rhee, Sangwoo Pae, E. Lee   +30 more
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Reliability of STT-MRAM for various embedded applications

2021 IEEE International Reliability Physics Symposium (IRPS), 2021
Owing to tunability of MTJ stack characteristics based on perpendicular magnetic anisotropy control via sophisticated magnetic material engineering, STT-MRAM can meet a wide range of product specifications for various applications: 1) flash-type applications such as microcontroller and AI inferencing device and 2) SRAM-type applications such as frame ...
Shinhee Han, Junghyuk Lee, Kiseok Suh, Kyungtae Nam, Daeeun Jeong, Sechung Oh, Sohee Hwang, Yongsung Ji, Kilho Lee, Kangho Lee, Yoonjong Song, Yeongki Hong, Gitae Jeong   +12 more
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Etching Methods for STT-MRAM

ECS Meeting Abstracts, 2017
Spin-transfer torque [1] MRAM (STT-MRAM) continues to be the subject of intense investigation due to its scalability and excellent endurance. Initially explored mainly as a DRAM replacement, STT-MRAM with perpendicularly magnetized materials is now targeted as a nonvolatile memory, medium-performance replacement for mobile applications, and more long
E. J. O'Sullivan, Anthony J Annunziata, Jemima Gonsalves, G. Hu, Eric A Joseph, Raman Kothandaraman, Gen Lauer, Nathan Marchack, J. J. Nowak, R. P. Robertazzi, J. Z. Sun, Thitima Suwannasiri, P. L. Trouilloud, Yu Zhu, D. C. Worledge   +14 more
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Accelerating STT-MRAM Ramp-up Characterization

2020 18th IEEE International New Circuits and Systems Conference (NEWCAS), 2020
Systematic characterization is crucial for magnetic tunnel junction from initial stack development to the final mass production. It has a direct impact on the wafer turn-around time and time to market. Under these circumstances, device characterization of the magnetic tunnel junction (MTJ) stack configuration is a critical step in the product ...
Govind Radhakrishnan, Youngki Yoon, Manoj Sachdev   +2 more
openaire   +1 more source