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Impact of Annealing on Perpendicular Magnetic Anisotropy and Interfacial Diffusion in Ultrathin [CoFeB/Pd]×n Multilayer Film. [PDF]
Nanomaterials (Basel)Saravanan L +8 more
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Electrical Modeling of STT-MRAM Defects
2018 IEEE International Test Conference (ITC), 2018 Spin-transfer-torque magnetic RAM (STT-MRAM) is one of the most promising emerging memory technologies. As various manufacturing vendors make significant efforts to push it to the market, appropriate STT-MRAM testing is of great importance. In this paper,
Siddharth Rao +2 more
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Quantitative Visualization of Thermally Enhanced Perpendicular Shape Anisotropy STT-MRAM Nanopillars [PDF]
Nano Letters, 2022 Perpendicular shape anisotropy (PSA) offers a practical solution to downscale spin-transfer torque magnetoresistive random-access memory (STT-MRAM) beyond the sub-20 nm technology node while retaining thermal stability.
Olivier Fruchart +2 more
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IEEE Transactions on Circuits and Systems II: Express Briefs, 2021
This brief presents a review of developments in spin-transfer-torque magnetoresistive random access memory (STT-MRAM) sensing over the past 20 years from a circuit design perspective. Various sensing schemes are categorized and described according to the data-cell variation-tolerant characteristics, pre-amplifiers, and offset tolerance.
Taehui Na +2 more
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This brief presents a review of developments in spin-transfer-torque magnetoresistive random access memory (STT-MRAM) sensing over the past 20 years from a circuit design perspective. Various sensing schemes are categorized and described according to the data-cell variation-tolerant characteristics, pre-amplifiers, and offset tolerance.
Taehui Na +2 more
openaire +2 more sources
2022 IEEE 33rd Magnetic Recording Conference (TMRC), 2022
D C Worledge, J Z Sun
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D C Worledge, J Z Sun
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Rethinking DRAM's Page Mode With STT-MRAM
IEEE Transactions on Computers, 2023Byoungchan Oh +2 more
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STT-MRAM for Automotive Applications
2021 IEEE 32nd Magnetic Recording Conference (TMRC), 2021There is a growing need for fast, endurant, non-volatile solutions for automotive that can meet the harsh requirements of automotive conditions. Automotive applications place severe demands memory devices. In the case of data retention, Automotive Grade 0 requires survival of T ambient 150 °C for 20 years with no loss in data integrity.
K. Nagel +5 more
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Mitigating Read Failures in STT-MRAM
2020 IEEE 38th VLSI Test Symposium (VTS), 2020Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) is an emerging non-volatile memory technology, as a leading candidate to replace conventional on-chip memories due to its various advantages such as high density, non-volatility, scalability, high endurance and CMOS compatibility.
Nair, S. M., Bishnoi, R., Tahoori, M. B.
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Monitoring Aging Defects in STT-MRAMs
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 2020Identifying manufacturing defects in magnetic tunnel junction (MTJ) device is crucial for the yield and reliability of spin-torque-transfer (STT) magnetic random-access memory (MRAM) arrays. Several of the MTJ defects result inparametric deviations of the device that deteriorate over time.
Govind Radhakrishnan +2 more
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