Results 171 to 180 of about 12,742 (221)

Probabilistically Programmed STT-MRAM

IEEE Journal on Emerging and Selected Topics in Circuits and Systems, 2012
Novel memory programming methods and corresponding memory structures are presented in this paper. Unlike conventional memory programming, this programming technique does not require deterministic switching of memory elements. This technique explicitly exploits the probabilistic switching characteristics of memory elements such as spin-transfer torque ...
Wenqing Wu, Xiaochun Zhu, Seung-Hyuk Kang, Kendrick Yuen, Rob Gilmore   +4 more
openaire   +1 more source

A Reconfigurable Arbiter PUF Based on STT-MRAM

2021 IEEE International Symposium on Circuits and Systems (ISCAS), 2021
With the rapid development of the Internet of Things (IoT) infrastructure, electronic devices are becoming ubiquitous, in which authentication and secure communication are required. As a result, novel hardware security primitives have been developed to overcome the deficiencies of conventional security methods and address the growing security issues ...
Rashid Ali, You Wang 0002, Haoyuan Ma, Zhengyi Hou, Deming Zhang, Erya Deng, Weisheng Zhao 0001   +6 more
openaire   +1 more source

A Parametric DFT Scheme for STT-MRAMs

IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2019
Process control and yield of spin torque transfer-magnetoresistive random access memory (STT-MRAM) array are of crucial importance in fabrication. While yield depends on the CMOS process variability, quality of the deposited MTJ film, and other process nonidealities, test platform can enable a parametric optimization and verification process using the ...
Govind Radhakrishnan, Youngki Yoon, Manoj Sachdev   +2 more
openaire   +1 more source

Exploiting STT-MRAM for approximate computing

2017 22nd IEEE European Test Symposium (ETS), 2017
Spin Transfer Torque Magnetic RAM (STT-MRAM) is an emerging non-volatile memory technology and a potential candidate to replace SRAM in processor caches. However, STT-MRAM suffers from a high write latency and high write energy consumption which have to be addressed for energy-efficient on-chip caches.
Sayed, Nour, Oboril, Fabian, Shirvanian, Azadeh, Bishnoi, Rajendra, Tahoori, Mehdi B.   +4 more
openaire   +2 more sources

Failure and reliability analysis of STT-MRAM

Microelectronics Reliability, 2012
Abstract Spin Transfer Torque Magnetic RAM (STT-MRAM) promises low power, great miniaturization prospective (e.g. 22 nm) and easy integration with CMOS process. It becomes actually a strong non-volatile memory candidate for both embedded and standalone applications.
Weisheng Zhao 0001, Yue Zhang 0010, Thibaut Devolder, Jacques-Olivier Klein, Dafine Ravelosona, Claude Chappert, Pascale Mazoyer   +6 more
openaire   +1 more source

STT-MRAM-Based Strong PUF Architecture

2015 IEEE Computer Society Annual Symposium on VLSI, 2015
Physically Unclonable Functions (PUFs) are emerging cryptographic primitives used to implement low-cost device authentication and secure secret key generation. Weak PUFs (i.e., devices able to generate a single signature or to deal with a limited number of challenges) and Strong PUFs (i.e., devices able to deal with multiple challenges) are widely ...
Vatajelu, Elena Ioana, Di Natale, Giorgio, Torres, Lionel, Prinetto, Paolo   +3 more
openaire   +1 more source

STT-MRAM-Based Reliable Weak PUF

IEEE Transactions on Computers, 2022
In recent years, micro-nano device characteristics like ferroelectrics and resistive switching are being used to build important security primitives such as Physical Unclonable Function (PUF). The micro-nano device-based hardware security primitives, although with higher security, energy efficiency, and integration density, suffer from serious ...
Yupeng Hu 0004, Linjun Wu, Zhuojun Chen, Yun Huang, Xiaolin Xu 0001, Keqin Li 0001, Jiliang Zhang 0002   +6 more
openaire   +1 more source

Addressing the Thermal Issues of STT-MRAM From Compact Modeling to Design Techniques

IEEE Nanotechnology Magazine, 2018
International audienceSpin transfer torque magnetic random access memory (STT-MRAM) possesses many desirable properties such as nonvolatility, fast access speed, unlimited endurance, and good compatibility with CMOS fabrication process.
Liuyang Zhang, Yuanqing Cheng, Wang Kang   +2 more
exaly   +2 more sources

Accelerating STT-MRAM Ramp-up Characterization

2020 18th IEEE International New Circuits and Systems Conference (NEWCAS), 2020
Systematic characterization is crucial for magnetic tunnel junction from initial stack development to the final mass production. It has a direct impact on the wafer turn-around time and time to market. Under these circumstances, device characterization of the magnetic tunnel junction (MTJ) stack configuration is a critical step in the product ...
Govind Radhakrishnan, Youngki Yoon, Manoj Sachdev   +2 more
openaire   +1 more source

Security primitives (PUF and TRNG) with STT-MRAM

2016 IEEE 34th VLSI Test Symposium (VTS), 2016
The rapid development of low power, high density, high performance SoCs has pushed the embedded memories to their limits and opened the field to the development of emerging memory technologies. The Spin-Transfer-Torque Magnetic Random Access Memory (STT-MRAM) has emerged as a promising choice for embedded memories due to its reduced read/write latency ...
Vatajelu, Elena Ioana, Di Natale, Giorgio, Prinetto, Paolo   +2 more
openaire   +2 more sources